• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.7
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• pp.1502-1507
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• 2005

The SA filters have a very flexible structure by limiting the maximum subwindow size. This flexible structure presents an effective trade-off between the complexity and performance of the filters. In this paper, experimental results showing the performance variation according to the change of filter order and subfilter type(such as max, min, exclusive-OR, mod) are presented. We designed optimal SA filters minimizing MSE for the various noise conditions. These results show several new properties of SA filters.

• Journal of the Korea Society for Simulation
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• v.4 no.2
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• pp.41-60
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• 1995

The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among circuit design engineers for motor drive and power converter applications. IGBT devices(International Rectifier, Proposed proposed model etc) have the best features of both power MOSFETs and power bipolar transistors, i.e., efficient voltage gate drive requirememts and high current density capability. When designing circuit and systems that utilize IGBTs or other power semiconductor devices, circuit simulations are needed to examine how the devices affect the behavior of the circuit. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The voltage rise rate at turn-off for inductive loads varies significantly for IGBTs with different base life times, and this rate of rise is important in determing the voltage overshoot for a given series resistor-inductor load circuit. Excessive voltage overshoot is potentially destructive, so a snubber protection circuit may be required. The protection circuit requirements are unique for the IGBT and can be examined using the model. The IGBT model in this paper is verified by comparing the results of the model with experimented results for various circuit operating conditions. The model performs well and describes experimented results accurately for the range of static and dynamic condition in which the device is intended to be operated.

• International Journal of Internet, Broadcasting and Communication
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• v.7 no.2
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• pp.28-35
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• 2015

Thin film electronic devices which brought the current mobile environment could be fabricated only under the high quality vacuum conditions provided by high vacuum systems. Especially for the development of advanced thin film devices, constant high quality vacuum as the deposition pressure is definitely needed. For this purpose, the variable conductance throttle valves were employed to the high vacuum system. In this study, the effects of throttle valve applications on vacuum characteristics were simulated to obtain the optimum design modelling of variable conductance of high vacuum system. Commercial simulator of vacuum system, $VacSim^{(multi)}$, was used on this investigation. Reliability of employed simulator was verified by the simulation of the commercially available models of high vacuum system. Simulated vacuum characteristics of the proposed modelling were agreed with the observed experimental behaviour of real systems. Pressure limit valve and normally on-off control valve were schematized as the modelling of throttle valve for the constant process-pressure of below $10^{-3}torr$. Simulation results were plotted as pump down curve of chamber, variable valve conductance and conductance logic of throttle valve. Simulated behaviors showed the applications of throttle valve sustained the process-pressure constantly, stably, and reliably.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.107-116
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• 2012

In this paper, the trade-off related to bandwidth of high-speed common-mode logic frequency divider is analyzed in detail. A method to optimize the operating frequency, band-width as well as power consumption is proposed. This method is based on bipolar device characteristics, whereby a negative resistance model can be used to estimate the optimal normalized upper frequency and lower frequency of frequency dividers under different conditions, which is conventionally ignored in literatures. This method provides a simple but efficient procedure in designing high performance frequency dividers for different applications. To verify the proposed method, a static divide-by-2 at millimeter wave ranges is implemented in 180 nm SiGe technology. Measurement results of the divider demonstrate significant improvement in the figure of merit as compared with literatures.

• ETRI Journal
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• v.39 no.2
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• pp.292-299
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• 2017

We propose pulse-mode dynamic $R_on$ measurement as a method for analyzing the effect of stress on large-scale high-power AlGaN/GaN HFETs. The measurements were carried out under the soft-switching condition (zero-voltage switching) and aimed to minimize the self-heating problem that exists with the conventional hard-switching measurement. The dynamic $R_on$ of the fabricated AlGaN/GaN MIS-HFETs was measured under different stabilization time conditions. To do so, the drain-gate bias is set to zero after applying the off-state stress. As the stabilization time increased from $ 0.1{\mu}s$ to 100 ms, the dynamic $R_on$ decreased from $160\Omega$ to $2\Omega$. This method will be useful in developing high-performance GaN power FETs suitable for use in high-efficiency converter/inverter topology design.

• Transactions of the Korean Society of Mechanical Engineers
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• v.14 no.6
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• pp.1669-1678
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• 1990

The annular and coaxial swirl flows between which LPG is supplied was selected to study the swirling flames in double co-swirl flows. The objective of this study is to research into the effects of double co-swirl flow conditions on the stability limit, the reverse flow boundary, and the time mean temperature distributions of the swirling flames. The increase of swirl intensity of axial flow makes the stability limit decrease, but the annular swirl flow (SM>0.5) makes stability and swirl intensity of axial flow increase, And the existence of axial swirl flow makes flame intensive and small in size, and this may be applicable to the design of high power compact combustor.

• Journal of the Korean Society of Propulsion Engineers
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• v.16 no.1
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• pp.64-71
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• 2012

While a conventional ECS mainly consisted of an air cycle machine and heat exchangers, a new concept of a phase change heat exchanger was added to improve the transient performance of the ECS. As a result, an ECS modeling program including the phase change heat exchanger is newly developed to estimate its effect in various flight conditions such as take-off, maneuver, cruise, and landing. The simulation result regarding a virtual flight profile has confirmed the new ECS fulfilled the requirement by showing the temperature of the cooling air returned from the bay was always kept below $80^{\circ}C$. Through this study, the new ECS concept with PCHE was verified successfully.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.15 no.4
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• pp.294-304
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• 2003

An experimental analysis using three-dimensional laser Doppler velocimetry(LDV) measurement and computational analysis using the Reynolds stress model in FLUENT are conducted to give a clear understanding of the effect of blade loading on the structure of tip leakage flow in a forward-swept axial-flow fan operating at the maximum efficiency condition ($\Phi$=0.25) and two off-design conditions ($\Phi$=0.21 and 0.30). As the blade loading increases, the onset position of the rolling-up of tip leakage flow moves upstream and the trajectory of tip leakage vortex center is more inclined toward the circumferential direction. Because the casing boundary layer becomes thicker and the mixing between the through-flow and the leakage jet with the different flow direction is enforced, the streamwise vorticity decays more fast with the blade loading increasing. A distinct tip leakage vortex is observed downstream of the blade trailing edge at $\Phi$=0.30, but it is not observed at $\Phi$=0.21 and 0.25.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.200-203
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• 2007

Devices of junction barrier schottky(JBS) structure using 4H-SiC substrates with wide energy band gaps was designed and fabricated. As a measurement results, the device of reverse I-V characteristics was shown as more than 1000 V, its design optimum length of p-grid was $3{\mu}m$ space. In this paper, I-V characteristics was modeled by using of device fabricated process conditions parameters and it was extracted that the I-V property parameters, and it was compared and analyzed with between device parameters and model parameters.

• Journal of Welding and Joining
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• v.19 no.1
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• pp.49-57
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• 2001

In this study, the residual stress fields of multi-pass welded were analyzed by FEA under various geometrical conditions. In order to estimate the effects of pipe geometries on residual stress distribution, welding processes of each model were performed under the same heat cycles. And then, the influence of cutting off the weld bead on the residual stress redistribution was also estimated. From the results, in the range of t/D=0.05, axial residual stresses on the outer surface of the welded pipe were linearly decreased with pipe diameter increase. On the other hand, hoop residual stresses were not influenced by them. And both axial and hoop residual stresses on the outer surface of the welded pipe were increased with pipe diameter increase. But, when t/D was smaller than 0.05, they were converged in the nearly same value. The maximum residual stresses were generated at around HAZ. It in therefore necessary to consider them in welding design, strength evaluation, and analysis of fracture characteristics.