• The Journal of Fisheries Business Administration
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• v.30 no.1
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• pp.61-75
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• 1999

• Fashion & Textile Research Journal
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• v.1 no.3
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• pp.201-209
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• 1999

• Bulletin of the Korean Chemical Society
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• v.19 no.10
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• pp.1124-1127
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• 1998

• Korean journal of applied entomology
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• v.52 no.2
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• pp.101-108
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• 2013

Three species of the linyphiid genus Walckenaeria, Walckenaeria chikunii Saito and Ono, 2001, Walckenaeria furcillata (Menge, 1869), and Walckenaeria ichifusaensis Saito and Ono, 2001, are reported new to the Korean spider fauna. W. furcillata is widely distributed throughout the Palearctic region, but W. chikunii and W. ichifusaensis are only known from their type localities in Japan. Photographs and illustrations of the diagnostic characters are provided.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.56-56
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• 2009

In this study, we fabricated the engineered $SiO_2/Si_3N_4/SiO_2$(ONO) tunnel barrier with high-k $HfO_2$ trapping layer for application high performance flash MLC(Multi Level Cell). As a result, memory device show low operation voltage and stable memory characteristics with large memory window. Therefore, the engineered tunnel barrier with ONO stacks were useful structure would be effective method for high-integrated MLC memory applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.53-53
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• 2009

Charge trap flash memory devices with modified tunneling barriers were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were used as engineered tunneling barriers. The VARIOT type tunneling barrier composed of oxide-nitride-oxide (ONO) layers revealed reliable electrical characteristics; long retention time and superior endurance. On the other hand, the CRESTED tunneling barrier composed of nitride-oxide-nitride (NON) layers showed degraded retention and endurance characteristics. It is found that the degradation of NON barrier is associated with the increase of interface state density at tunneling barrier/silicon channel by programming and erasing (P/E) stress.

• Journal of the Korean Chemical Society
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• v.49 no.2
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• pp.239-242
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• 2005

• Proceedings of the KSRS Conference
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• 2004.10a
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• pp.652-655
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• 2004

The geometry of satellite image captured by linear pushbroom scanner is different from that of frame camera image. Since the exterior orientation parameters for satellite image will vary scan line by scan line, the epipolar geometry of satellite image differs from that of frame camera image. As we know, 2D affine orientation for the epipolar image of linear pushbroom scanners system are well-established by using the collinearity equation (Testsu Ono, 1999). Also, another epipolar geometry of linear pushbroom scanner system is recently established by Habib(2002). He reported that the epipolar geometry of linear push broom satellite image is realized by parallel projection based on 2D affine models. Here, in this paper, we compared the Ono's method with Habib's method. In addition, we proposed a method that generates epipolar resampled images. For the experiment, IKONOS stereo images were used in generating epipolar images.

• Journal of Species Research
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• v.6 no.spc
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• pp.51-53
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• 2017

There are five known species of the genus Tmarus (Thomisidae) in Korea to date: Tmarus horvathi Kulczyn'ski, 1895, Tmarus koreanus Paik, 1973, Tmarus orientalis Schenkel, 1963, Tmarus piger (Walckenaer, 1802) and Tmarus rimosus Paik, 1973. Two females of Tmarus yaginumai Ono, 1977, which was previously only known in Japan, were collected by sweep net between the shrubs at hillocks near the coast of Korea and are described with taxonomic illustrations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.953-958
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• 2001

The antifuse is a semi-permanent memory device like a ROM which shows the open or short state, and a switch device connecting logic blocks selectively in FPGA. In addition, the antifuse has been used as a logic device to troubleshoot defective memory cells arising from SDRAM processing. In this study, we have fabricated ONO antifuses consisted of PIP structure. The antifuse shows a high resistance more than several G Ω in the normal state, and shows a low resistance less than 500 Ω after program. The program resistance variation according to temperature shows the very stable value of $\pm$20 Ω. At this time, its program voltage shows 6.7∼7.2 V and the program is performed within 1 second. Therefore this result shows that the PIP antifuse is a very stable and programmable logic device.