Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Characteristics of the PIP Antifuse for Configuration of the Programmable Logic Circuit

프로그램 가능한 논리 회로 구성을 위한 PIP 앤티퓨즈의 전기적 특성

  • 김필중 (성화대학 인터넷통신과) ;
  • 윤중현 (조선대학교 전자공학과) ;
  • 김종빈 (조선대학교 전자공학과)
  • Published : 2001.12.01
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Abstract

The antifuse is a semi-permanent memory device like a ROM which shows the open or short state, and a switch device connecting logic blocks selectively in FPGA. In addition, the antifuse has been used as a logic device to troubleshoot defective memory cells arising from SDRAM processing. In this study, we have fabricated ONO antifuses consisted of PIP structure. The antifuse shows a high resistance more than several G Ω in the normal state, and shows a low resistance less than 500 Ω after program. The program resistance variation according to temperature shows the very stable value of $\pm$20 Ω. At this time, its program voltage shows 6.7∼7.2 V and the program is performed within 1 second. Therefore this result shows that the PIP antifuse is a very stable and programmable logic device.

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References

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