• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2006년도 춘계종합학술대회
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• pp.894-897
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• 2006

Spatial distribution of injected electrons and holes is evaluated by using single-junction charge pumping technique in SONOS(Poly-silicon/Oxide/Nitride/Oxide/Silicon) memory cells. Injected electron are limited to length of ONO(Oxide/Nitride/oxide) region in locally ONO stacked cell, while are spread widely along with channel in fully ONO stacked cell. Hot-holes are trapped into the oxide as well as the ONO stack in locally ONO stacked cell.

• 한국환경과학회지
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• 제12권2호
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• pp.119-124
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• 2003

An effective grafting method for jujube nursery trees was developed to shorten the operation time, improve the percentage of "takes" and shoot emergence, and form the better graft union. Out of 7 grafting methods the splice, modified scion Ono graft and the bark graft showed relatively short operation time during the grafting operation comparing to the modified rootstock Ono graft or the chip budding. Among these methods, the bark graft demonstrated 100% "takes", but the modified scion Ono graft or the standard Ono graft showed 58.3% of "takes". The percentages of the vegetative shoot emergence were 100% fir the bark graft, 70% f3r the modified scion Ono graft and lower emergence percent for the rest grafting methods. The union tissue formation for the modified scion Ono graft, the bark graft, or the whip-and-tongue graft was significantly larger than the standard Ono graft or the splice graft. In a close examination of the cross sectional areas of the graft union formation through the microscope, the bark graft was superior, the standard Ono graft was inferior and rest of the grafting methods were intermediate.ing methods were intermediate.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2009년도 춘계 학술논문 발표대회 학계
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• pp.219-223
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• 2009

This paper is the result of investigation of ONO PPSM(ONO PORTABLE SLIP METER) by way of experiment to see the validity as a slip meter, ONO PPSM is a portable slip meter which was made up for the weak points of O-Y PSM(ONO-YOSHIOKA PULL SLIP METER) which takes an accurate measurement of the slip resistance but very heavy and hard to operate. In order to know the stability of the measurement result of ONO PPSM, we measured the slip resistance against 4 different kind of floor materials. As a result of this, we found out that the coefficient of variability of CSR' is less than 0.05. Also, we verified the relation between CSR' and CSR. more specifically by doing the slip test against 7 different kinds of inorganic matter floor materials. We increased the usability of ONO PPSM as a slip meter by suggesting the method of sharing the evaluation index of slip of CSR' and C.S.R.

• 한국건축시공학회지
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• 제9권5호
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• pp.155-161
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• 2009

본 연구에서는 시험방법의 과학적 우수성에도 불구하고 중량으로 인해 현장에서의 운용이 곤란한 경사인장형 미끄럼시험기(O-Y PSM)에 대응하여 개발된 휴대형 미끄럼시험기(ONO PPSM)를 대상으로, 미끄럼저항 측정값의 안정성을 실험을 통해 확인하고 PVC계 바닥재 및 무기질계 바닥재에 대한 미끄럼시험을 다각도로 실시하여 그 타당성을 보다 심도 깊게 검증하였다. 또한 다양한 재질, 표면상태의 바닥재에 대한 O-Y PSM과 ONO PPSM의 미끄럼저항 비교실험을 통하여 C.S.R과 C.S.R'의 미끄럼 평가지표를 공유하기 위한 교정식을 새롭게 제안함으로써 ONO PPSM의 미끄럼시험기로서 범용성을 더 한층 제고하였다.

• Journal of information and communication convergence engineering
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• 제4권2호
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• pp.84-87
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• 2006

Lateral distributions of locally injected electrons and holes in an oxide-nitride-oxide (ONO) dielectric stack of two different silicon-oxide-nitride-oxide-silicon (SONOS) memory cells are evaluated by single-junction charge pumping technique. Spatial distribution of electrons injected by channel hot electron (CHE) for programming is limited to length of the ONO region in a locally ONO stacked cell, while is spread widely along with channel in a fully ONO stacked cell. Hot-holes generated by band-to-band tunneling for erasing are trapped into the oxide as well as the ONO stack in the locally ONO stacked cell.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.778-783
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by TEM, AES and AFM. Seocnd derivative spectra of Auger Si LVV overlapping peak provide useful information fot chemical state analysis of superthin film. The ONO film with dimension of tunnel oxide 23$\AA$, nitride 33$\AA$, and blocking oxide 40$\AA$ was fabricated. During deposition of the LPCVD nitride film on tunnel oxide, this thin oxide was nitrized. When the blocking oxide was deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$ (blocking oxide)/O-rich SiON(interface)/N-rich SiON(nitride)/ O-rich SiON(tunnel oxide)

• Transactions on Electrical and Electronic Materials
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• 제12권1호
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• pp.16-19
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• 2011

The oxide-nitride-oxide (ONO) deposition process was added to the beginning of a 0.25 ${\mu}m$ embedded polysiliconoxide-nitride-oxide-silicon (SONOS) process before all of the logic well implantation processes in order to maintain the characteristics of basic CMOS(complementary metal-oxide semiconductor) logic technology. The system subsequently suffered severe ONO rupture failure. The damage was caused by the ONO implantation and was responsible for the ONO rupture failure in the embedded SONOS process. Furthermore, based on the experimental results as well as an implanted ion's energy loss model, processes primarily producing permanent displacement damages responsible for the ONO rupture failure were investigated for the embedded SONOS process.

• 충청수학회지
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• 제25권2호
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• pp.283-289
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• 2012

In this paper, we define the Ono invariants of imaginary quadratic function fields and obtained several results concerning the relations between the Ono invariants and the class numbers.

• 한국정보통신학회논문지
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• 제2권3호
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• pp.431-437
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• 1998

본 논문에서는, ULSI에서 기존의 실리콘 절연막을 대체할 것으로 여겨지는 질화 산화막(NO)과 재산화 질화 산화막(ONO)의 전기적 특성을 조사하였다. 특히, 질화 및 재산화 시간에 따른 NO와 ONO막의 전류전압 특성, 게이트 전압이동, 시간종속 절연항복 특성(TDDB) 변화를 측정하였고, 외부 온도 변화에 따른 최적화 된NO와 ONO막의 누설 전류와 절연체가 항복에 이르게 하는 전하량(Q$\_bd$)변화를 측정하였다. 그런 다음 기존의SIO$\_2$와 비교하였다. 측정 결과로부터, NO와 ONO막은 공정시간에 상당히 의존적이었으며, 최적화된 ONO막은 같은 전계를 유지하는 동안 절연 특성 및 Q$\_bd$특성에서 NO막과 SIO$\_2$에 비하여 우수한 성능을 보였다.

• 한국응용곤충학회지
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• 제52권3호
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• pp.171-179
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• 2013

접시거미 4종 을 한국미기록종으로 보고한다; Centromerus sylvaticus (Blackwall,1841) (가우리접시거미), Ryojius japonicus Saito and Ono, 2001 (오이접시거미), Sachaliphantes sachalinensis (Tanasevitch, 1988) (극동접시거미), Tmeticus vulcanicus Saito and Ono, 2001 (화산애접시거미). 4속 역시 한국미기록속이다; Centromerus Dahl,1886 (가우리접시거미속), Ryojius Saito and Ono, 2001 (오이접시거미속), Sachaliphantes Saaristo and Tanasevitch, 2004 (극동접시거미속), Tmeticus Menge, 1868 (유럽애접시거미속). 종의 사진 자료와 진단을 위한 그림이 제공된다.