• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.894-897
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• 2006

Spatial distribution of injected electrons and holes is evaluated by using single-junction charge pumping technique in SONOS(Poly-silicon/Oxide/Nitride/Oxide/Silicon) memory cells. Injected electron are limited to length of ONO(Oxide/Nitride/oxide) region in locally ONO stacked cell, while are spread widely along with channel in fully ONO stacked cell. Hot-holes are trapped into the oxide as well as the ONO stack in locally ONO stacked cell.

• Journal of Environmental Science International
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• v.12 no.2
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• pp.119-124
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• 2003

An effective grafting method for jujube nursery trees was developed to shorten the operation time, improve the percentage of "takes" and shoot emergence, and form the better graft union. Out of 7 grafting methods the splice, modified scion Ono graft and the bark graft showed relatively short operation time during the grafting operation comparing to the modified rootstock Ono graft or the chip budding. Among these methods, the bark graft demonstrated 100% "takes", but the modified scion Ono graft or the standard Ono graft showed 58.3% of "takes". The percentages of the vegetative shoot emergence were 100% fir the bark graft, 70% f3r the modified scion Ono graft and lower emergence percent for the rest grafting methods. The union tissue formation for the modified scion Ono graft, the bark graft, or the whip-and-tongue graft was significantly larger than the standard Ono graft or the splice graft. In a close examination of the cross sectional areas of the graft union formation through the microscope, the bark graft was superior, the standard Ono graft was inferior and rest of the grafting methods were intermediate.ing methods were intermediate.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2009.05b
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• pp.219-223
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• 2009

This paper is the result of investigation of ONO PPSM(ONO PORTABLE SLIP METER) by way of experiment to see the validity as a slip meter, ONO PPSM is a portable slip meter which was made up for the weak points of O-Y PSM(ONO-YOSHIOKA PULL SLIP METER) which takes an accurate measurement of the slip resistance but very heavy and hard to operate. In order to know the stability of the measurement result of ONO PPSM, we measured the slip resistance against 4 different kind of floor materials. As a result of this, we found out that the coefficient of variability of CSR' is less than 0.05. Also, we verified the relation between CSR' and CSR. more specifically by doing the slip test against 7 different kinds of inorganic matter floor materials. We increased the usability of ONO PPSM as a slip meter by suggesting the method of sharing the evaluation index of slip of CSR' and C.S.R.

• Journal of the Korea Institute of Building Construction
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• v.9 no.5
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• pp.155-161
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• 2009

This paper is the result of an investigation of a PORTABLE SLIP METER(ONO PPSM) by means of an experiment to determine its validity as a slip meter. ONO PPSM is a portable slip meter that was designed to address the weak points of PULL SLIP METER(O-Y PSM), which can be used to obtain an accurate measurement of slip resistance, but is very heavy and difficult to operate. To determine the stability of the measurement result of ONO PPSM, we measured the slip resistance against 4 different kind of floor materials. Our findings showed that the coefficient of variability of CSR' is less than 0.05. Furthermore, we verified the relationship between CSR' and CSR. More specifically, by performing the slip test against 7 different kinds of inorganic matter floor materials, we increased the usability of ONO PPSM as a slip meter by suggesting a method of sharing the evaluation index of slip of CSR' and C.S.R.

• Journal of information and communication convergence engineering
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• v.4 no.2
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• pp.84-87
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• 2006

Lateral distributions of locally injected electrons and holes in an oxide-nitride-oxide (ONO) dielectric stack of two different silicon-oxide-nitride-oxide-silicon (SONOS) memory cells are evaluated by single-junction charge pumping technique. Spatial distribution of electrons injected by channel hot electron (CHE) for programming is limited to length of the ONO region in a locally ONO stacked cell, while is spread widely along with channel in a fully ONO stacked cell. Hot-holes generated by band-to-band tunneling for erasing are trapped into the oxide as well as the ONO stack in the locally ONO stacked cell.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.778-783
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by TEM, AES and AFM. Seocnd derivative spectra of Auger Si LVV overlapping peak provide useful information fot chemical state analysis of superthin film. The ONO film with dimension of tunnel oxide 23$\AA$, nitride 33$\AA$, and blocking oxide 40$\AA$ was fabricated. During deposition of the LPCVD nitride film on tunnel oxide, this thin oxide was nitrized. When the blocking oxide was deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$ (blocking oxide)/O-rich SiON(interface)/N-rich SiON(nitride)/ O-rich SiON(tunnel oxide)

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.16-19
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• 2011

The oxide-nitride-oxide (ONO) deposition process was added to the beginning of a 0.25 ${\mu}m$ embedded polysiliconoxide-nitride-oxide-silicon (SONOS) process before all of the logic well implantation processes in order to maintain the characteristics of basic CMOS(complementary metal-oxide semiconductor) logic technology. The system subsequently suffered severe ONO rupture failure. The damage was caused by the ONO implantation and was responsible for the ONO rupture failure in the embedded SONOS process. Furthermore, based on the experimental results as well as an implanted ion's energy loss model, processes primarily producing permanent displacement damages responsible for the ONO rupture failure were investigated for the embedded SONOS process.

• Journal of the Chungcheong Mathematical Society
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• v.25 no.2
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• pp.283-289
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• 2012

In this paper, we define the Ono invariants of imaginary quadratic function fields and obtained several results concerning the relations between the Ono invariants and the class numbers.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.3
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• pp.431-437
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• 1998

In this paper, we have investigated the electrical properties of ultra-thin nitrided oxide(NO) and re-oxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. Especially, we have studied a variation of I-V characteristics, gate voltage shift, and time-dependent dielectric breakdown(TDDB) of thin layer NO and ONO film depending on nitridation and reoxidation time, respectively, and measured a variation of leakage current and charge-to-breakdown(Q$\_bd$) of optimized NO and ONO film depending on ambient temperature, and then compared with the properties of conventional SIO$\_2$. From the results, we find that these NO and ONO thin films are strongly influenced by process time and the optimized ONO film shows superior dielectric characteristics, and (Q$\_bd$) performance over the NO film and SIO$\_2$, while maintaining a similar electric field dependence compared with NO layer.

• Korean journal of applied entomology
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• v.52 no.3
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• pp.171-179
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• 2013

Four linyphiid species, Centromerus sylvasticus (Blackwall, 1841), Ryojius japonicus Saito and Ono, 2001, Sachaliphantes sachalinensis (Tanasevitch, 1988) and Tmeticus vulcanicus Saito and Ono, 2001, are reported new to the Korean fauna. Four genera, Centromerus Dahl, 1886, Ryojius Saito and Ono, 2001, Sachaliphantes Saaristo and Tanasevitch, 2004 and Tmeticus Menge, 1868, are also new to Korea. Diagnostic phototraphs and illustrations of species are provided.