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Loss of Expression of PTEN is Associated with Worse Prognosis in Patients with Cancer

  • Qiu, Zhi-Xin;Zhao, Shuang;Li, Lei;Li, Wei-Min
    • Asian Pacific Journal of Cancer Prevention
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    • v.16 no.11
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    • pp.4691-4698
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    • 2015
  • Background: The tumor suppressor phosphatase and tensin homolog (PTEN) is an important negative regulator of cell-survival signaling. However, available results for the prognostic value of PTEN expression in patients with cancer remain controversial. Therefore, a meta-analysis of published studies investigating this issue was performed. Materials and Methods: A literature search via PubMed and EMBASE databases was conducted. Statistical analysis was performed by using the STATA 12.0 (STATA Corp., College, TX). Data from eligible studies were extracted and included into the meta-analysis using a random effects model. Results: A total of 3,810 patients from 27 studies were included in the meta-analysis, 22 investigating the relationship between PTEN expression and overall survival (OS) using univariate analysis, and nine with multivariate analysis. The pooled hazard ratio (HR) for OS was 1.64 (95% confidence interval (CI): 1.32-2.05) by univariate analysis and 1.56 (95% CI: 1.20-2.03) by multivariate analysis. In addition, eight papers including two disease-free-survival analyses (DFSs), four relapse-free-survival analyses (RFSs), three progression-free-survival analyses (PFSs) and one metastasis-free-survival analysis (MFS) reported the effect of PTEN on survival. The results showed that loss of PTEN expression was significant correlated with poor prognosis, with a combined HR of 1.74 (95% CI: 1.24-2.44). Furthermore, in the stratified analysis by the year of publication, ethnicity, cancer type, method, cut-off value, median follow-up time and neoadjuvant therapy in which the study was conducted, we found that the ethnicity, cancer type, method, median follow-up time and neoadjuvant therapy are associated with prognosis. Conclusions: Our study shows that negative or loss of expression of PTEN is associated with worse prognosis in patients with cancer. However, adequately designed prospective studies need to be performed for confirmation.

First observation on the early embryonic and larval development of spiny oyster Saccostrea kegaki Torigoe & Inaba, 1981 (Bivalvial: Ostreoida) using scanning electron microscope on the north coast of Jeju, Korea (주사전자현미경 (Scanning Electron Microscope)을 이용한 제주 북부 연안에 서식하는 가시굴 (Saccostrea kegaki Torigoe & Inaba, 1981)의 초기 유생발달관찰)

  • Lee, Hee-Jung;Kang, Hyun-Sil;Jeung, Hee-Do;Hong, Hyun-Ki;Choi, Kwang-Sik.
    • The Korean Journal of Malacology
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    • v.29 no.2
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    • pp.97-103
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    • 2013
  • In the present study, we monitored the early development of Saccostrea kegakia subtropical oyster species distributing on rocky intertidal off the northern Jeju Island using scanning electron microscope (SEM). The female oyster collected in early August, 2012 were fully mature exhibiting relatively small eggs ($46.5{\pm}1.4{\mu}m$ in diameter) in the gonad, while testis of the mature male oysters were filled with fully developed sperms of 36.9 ${\mu}m$ in length. The fertilized eggs developed into 2-cell stage with polar body after 1 hr 20 min of fertilization, then followed by Morula stage (3 hr 20 min), Blastula stage (4 hr 50 min), Gastrula stage (7 hr), and trochophore larvae stage (9 hr 30 min). The observed early development of S. kegaki in this study was similar the early development of other oysters, although size of the fertilized eggs were somewhat smaller.

The Design of CMOS-based High Speed-Low Power BiCMOS LVDS Transmitter (CMOS공정 기반의 고속-저 전압 BiCMOS LVDS 구동기 설계)

  • Koo, Yong-Seo;Lee, Jae-Hyun
    • Journal of IKEEE
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    • v.11 no.1 s.20
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    • pp.69-76
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    • 2007
  • This paper presents the design of LVDS (Low-Voltage-Differential-Signaling) transmitter for Gb/s-per-pin operation. The proposed LVDS transmitter is designed using BiCMOS technology, which can be compatible with CMOS technology. To reduce chip area and enhance the robustness of LVDS transmitter, the MOS switches of transmitter are replaced with lateral bipolar transistor. The common emitter current gain($\beta$) of designed bipolar transistor is 20 and the cell size of LVDS transmitter is $0.01mm^2$. Also the proposed LVDS driver is operated at 1.8V and the maximum data rate is 2.8Gb/s approximately In addition, a novel ESD protection circuit is designed to protect the ESD phenomenon. This structure has low latch-up phenomenon by using turn on/off character of P-channel MOSFET and low triggering voltage by N-channel MOSFET in the SCR structure. The triggering voltage and holding voltage are simulated to 2.2V, 1.1V respectively.

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Spatiotemporal Analysis of Retinal Waveform using Independent Component Analysis in Normal and rd/rd Mouse (독립성분분석을 이용한 정상 마우스와 rd/rd 마우스 망막파형의 시공간적 분석)

  • Ye, Jang-Hee;Kim, Tae-Seong;Goo, Yong-Sook
    • Progress in Medical Physics
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    • v.18 no.1
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    • pp.20-26
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    • 2007
  • It is expected that synaptic construction and electrical characteristics In degenerate retina might be different from those In normal retina. Therefore, we analyzed the retinal waveform recorded with multielectrode array in normal and degenerate retina using principal component analysis (PCA) and Independent component analysis (ICA) and compared the results. PCA Is a well established method for retinal waveform while ICA has not tried for retinal waveform analysis. We programmed ICA toolbox for spatiotemporal analysis of retinal waveform. In normal mouse, the MEA spatial map shows a single hot spot perfectly matched with PCA-derived ON or OFF ganglion cell response. However In rd/rd mouse, the MEA spatial map shows numerous hot and cold spots whose underlying interactions and mechanisms need further Investigation for better understanding.

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User Association and Base Station Sleep Management in Dense Heterogeneous Cellular Networks

  • Su, Gongchao;Chen, Bin;Lin, Xiaohui;Wang, Hui;Li, Lemin
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.11 no.4
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    • pp.2058-2074
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    • 2017
  • Dense Heterogeneous Cellular Networks(HCNs) offer a promising approach to meet the target of 1000x increase in aggregate data rates in 5G wireless communication systems. However how to best utilize the available radio resources at densely deployed small cells remains an open problem as those small cells are typically unplanned. In this paper we focus on balancing loads across macro cells and small cells by offloading users to small cells, as well as dynamically switching off underutilized small cells. We propose a joint user association and base station(BS) sleep mangement(UA-BSM) scheme that proactively offloads users to a fraction of the densely deployed small cells. We propose a heuristic algorithm that iteratively solves the user association problem and puts BSs with low loads into sleep. An interference relation matrix(IRM) is constructed to help us identify the candidate BSs that can be put into sleep. User associations are then aggregated to selected small cells that remain active. Simulation results show that our proposed approach achieves load balancing across macro and small cells and reduces the number of active BSs. Numerical results show user signal to interference ratio(SINR) can be improved by small cell sleep control.

Analysis of Lattice Temperature in Super Junction Trench Gate Power MOSFET as Changing Degree of Trench Etching

  • Lee, Byeong-Il;Geum, Jong Min;Jung, Eun Sik;Kang, Ey Goo;Kim, Yong-Tae;Sung, Man Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.3
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    • pp.263-267
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    • 2014
  • Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don't have a great effect on temperature change.

Thermal Behaviors and Reaction Characteristics of an Integrated Reactor with Catalytic Combustion-Reforming According to Operation Conditions (운전조건 변경에 따른 통합형 촉매연소-개질반응기의 열적 거동 및 반응 특성)

  • Ghang, Tae-Gyu;Lee, Sang-Min;Ahn, Kook-Young;Kim, Yong-Mo
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.35 no.6
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    • pp.641-648
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    • 2011
  • Off-gases emitted from the anode of a molten carbonate fuel cell (MCFC) at high temperatures for power generation are used as fuel in catalytic combustion. The heat generated in the catalytic combustor is utilized as the heat for the endothermic reaction required for steam reforming. Among the various operational conditions of the integrated reactor, we varied the inlet gas compositions of the catalytic combustor according to fuel utilization in the MCFC and the ratio of steam to carbon in the reformer. Subsequently, the thermal behaviors and reaction characteristics of the integrated reactor were investigated experimentally. The fundamental data from this experimental study will be useful for the design and fabrication of a more practical integrated reactor in the future.

Sensory and Microbiological properties of Dongchimi added with Jasoja(Perillae semen) (자소자 첨가 동치미의 관능적 및 미생물학적 특성)

  • 황재희;장명숙
    • Korean journal of food and cookery science
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    • v.16 no.6
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    • pp.557-567
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    • 2000
  • An optional ingredient, jasoja(Perillae semen), was adopted to improve the quality of Dongchimi. The final weight percentage of jasoja in Dongchimi was adjusted to 0, 0.25, 0.5, 0.75, or 1.0%, per radish, and sensory and microbiological characteristics were determined during fermentation at 10 for 45 days. The effect was varied depending on the amounts of jasoja, but Dongchimi fermented with 0.5% jasoja was most favored for color, flavor, taste, texture, and overall acceptability in sensory evaluation. According to a quantitative descriptive analysis for the product, the liquid portion of Dongchimi steadily became clearer and less sour in proportion to the amount of added jasoja. However, a strong off-taste was detected from 1.0% treatment. The viable cell numbers of total and lactic acid bacteria drastically increased during the first 2 days, and then gradually increased to their maximum values during fermentation and slowly decreased at the later stage. Dongchimi with 0.5% treatment showed a distinctive high number of microorganisms at the 15th-day of fermentation and this trend was maintained until the completion of fermentation. The lactic acid bacteria isolated and identified from Dongchimi were; Lactobacillus brevis, Lactobacillus plantarum, Leuconostoc mesenteroides, Lactococcus faecalis, and Lactococcus lactis. The combined number of Lactobacillus brevis and Lactobacillus plantarum began to increase right after preparation to as much as 10$\^$7/CFU/㎖, then decreased to 10-10$^3$CFU/㎖ afterward. This study showed that the addition of jasoja retarded the initial fermentation of Dongchimi; however, too much jasoja at above 1% weight level per Chinese radish might accelerate fermentation at the later fermentation stage and shoud be avoided. A comparable fermentation pattern was observed among the samples; however, more acceptable Dongchimi could be prepared by fermenting for 11 to 30 days at 0.5% jasoja concentration per radish.

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The Neutrophil to Lymphocyte Ratio has a High Negative Predictive Value for Pathologic Complete Response in Locally Advanced Breast Cancer Patients Receiving Neoadjuvant Chemotherapy

  • Eryilmaz, Melek Karakurt;Mutlu, Hasan;Salim, Derya Kivrak;Musri, Fatma Yalcin;Tural, Deniz;Coskun, Hasan Senol
    • Asian Pacific Journal of Cancer Prevention
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    • v.15 no.18
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    • pp.7737-7740
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    • 2014
  • Background: The neutrophil-to-lymphocyte ratio (NLR) is a strong predictor of mortality in patients with pancreatic, colorectal, lung, gastric cancer and renal cell carcinoma. The aim of this study was to determine the relationship between pathological complete response (pCR) and pretreatment NLR values in locally advanced breast cancer (BC) patients receiving neoadjuvant chemotherapy (NACT). Materials and Methods: Datawere collected retrospectively from the Akdeniz University School of Medicine Database for locally advanced BC patients treated with NACT between January 2000-December 2013. Results: A total of 78 patients were analyzed. Sixteen (20%) patients achieved pCR. Estrogen receptor (ER) positivity was lower in pCR+ than pCR-cases (p=0.011). The median NLR values were similar in both arms. The optimum NLR cut-off point for BC patients with PCR+ was 2.33 (AUC:0.544, 95%CI [0.401-0.688], p=0.586) with sensitivity, specificity, positive predictive value and negative predictive value (NPV) of 50%, 51,6%, 21,1%, and 80%, respectively. Conclusions: This study showed no relationship between the pCR and pretreatment NLR values. Because of a considerable high NPV, in the patients with higher NLR who had luminal type BC in which pCR is lower after NACT, such treatment may not be recommended.

Modeling for Memristor and Design of Content Addressable Memory Using Memristor (멤리스터의 모델링과 연상메모리(M_CAM) 회로 설계)

  • Kang, Soon-Ku;Kim, Doo-Hwan;Lee, Sang-Jin;Cho, Kyoung-Rok
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.7
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    • pp.1-9
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    • 2011
  • Memristor is a portmanteau of "memory resistor". The resistance of memristor is changed depends on the history of electric charge that passed through the device and it is able to memorize the last resistance after turning off the power supply. This paper presents this device that has a high chance to be the next generation of commercial non-volatile memory and its behavior modeling using SPICE simulation. The memristor MOS content addressable memory (M_CAM) is also designed and simulated using the proposed behavioral model. The proposed M_CAM unit cell area and power consumption show an improvement around 40% and 96%, respectively, compare to the conventional SRAM based CAMs. The M_CAM layout is also implemented using 0.13${\mu}m$ mixed-signal CMOS process under 1.2 V supply voltage.