• 한국결정성장학회지
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• 제11권4호
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• pp.154-159
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• 2001

(Li,Al)$MnO_2(OH)_2$:Co 화합물의 합성르 수열법에 의해 행하였다. 출발원료는 $MnO_2$, LiOH.$H_2$O, $Co_3O_4$, $Al(OH)_3$이 사용되었으며, 단일상의 (Li,Al)$MnO_2(OH)_2$:Co 화합물을 얻을 수 있는 최적의 합성조건은 다음과 같았다. 반응온도 : $200^{\circ}C$ 반응시간 ; 3일간, 반응장치 ; 시이소형, 수열용매 ; 3M-KOH, (Li,Al)$MnO_2(OH)_2$:Co 의 원자비 = 1:2.1:2.5~2:0.5~1. 수열합성된 단사의 (Li,Al)$MnO_2(OH)_2$:Co 화합물은 결정성이 우수하였으며, 청색안료로써 천연 오수에 필적하는 발색효과를 나타내었다. 합성된 (Li,Al)$MnO_2(OH)_2$:Co 화합물의 형태는 육각 판싱이였으며, 입자의 크기는 0.5~1 $\mu\textrm{m}$의 미립자이였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.297-297
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• 2008

Buffer layers play an important role in the development of high critical current density coated conductor. $LaMnO_3$, $SrTiO_3$ and $BaZrO_3$ buffer layers were compatible with MgO surfaces and also provide a good template for growing high current density REBCO(RE=Rare earth) films. Systematic studies on the influences of pulsed laser deposition parameters (deposition temperature, deposition pressure, processing gas, laser energy density, etc.) on microstructure and texture properties of $LaMnO_3$, $SrTiO_3$ and $BaZrO_3$ films as buffer layer deposited on ion-beam assisted deposition MgO (IBAD_MgO) template by pulse laser deposition method, were carried out. These results will be presented together with the discussion on the possible use of this material in HTS coated conductor as buffer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.180-180
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• 2010

Thin film transistors (TFTs) based on oxide semiconductors have emerged as a promising technology, particularly for active-matrix TFT-based backplanes. Currently, an amorphous oxide semiconductor, such as InGaZnO, has been adopted as the channel layer due to its higher electron mobility. However, accurate and repeatable control of this complex material in mass production is not easy. Therefore, simpler polycrystalline materials, such as ZnO and $SnO_2$, remain possible candidates as the channel layer. Inparticular, ZnO-based TFTs have attracted considerable attention, because of their superior properties that include wide bandgap (3.37eV), transparency, and high field effect mobility when compared with conventional amorphous silicon and polycrystalline silicon TFTs. There are some technical challenges to overcome to achieve manufacturability of ZnO-based TFTs. One of the problems, the stability of ZnO-based TFTs, is as yet unsolved since ZnO-based TFTs usually contain defects in the ZnO channel layer and deep level defects in the channel/dielectric interface that cause problems in device operation. The quality of the interface between the channel and dielectric plays a crucial role in transistor performance, and several insulators have been reported that reduce the number of defects in the channel and the interfacial charge trap defects. Additionally, ZnO TFTs using a high quality interface fabricated by a two step atomic layer deposition (ALD) process showed improvement in device performance In this study, we report the fabrication of high performance ZnO TFTs with a $Si_3N_4$ gate insulator treated using plasma. The interface treatment using electron cyclotron resonance (ECR) $O_2$ plasma improves the interface quality by lowering the interface trap density. This process can be easily adapted for industrial applications because the device structure and fabrication process in this paper are compatible with those of a-Si TFTs.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.979-982
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• 2003

Due to the differential transmission technique and low voltage swing, LVDS has been widely used for high speed transmission with low power consumption. This paper presents the design and implementation of interface circuits for 1.5Gb/s operation in 0.35um CMOS technology. The interface circuit ate fully compatible with the low-voltage differential signaling(LVDS) standard. The LVDS proposed in this paper utilizes a sense amplifiers instead of the conventional differential pre-amplifier, which provides a 1.5Gb/s transmission speed with further reduced driver output voltage. Furthermore, the reduced driver output voltage results in reducing the power consumption.

• Transactions on Electrical and Electronic Materials
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• 제18권6호
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• pp.341-344
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• 2017

Infrared (IR) filters were developed to implement integrated three-dimensional (3D) image sensors that are capable of obtaining both color image and depth information at the same time. The combination of light filters applicable to the 3D image sensor is composed of a modified IR cut filter mounted on the objective lens module and on-chip filters such as IR pass filters and color filters. The IR cut filters were fabricated by inorganic $SiO_2/TiO_2$ multilayered thin-film deposition using RF magnetron sputtering. On-chip IR pass filters were synthetized by dissolving various pigments and dyes in organic solvents and by subsequent patterning with photolithography. The fabrication process of the filters is fairly compatible with the complementary metal oxide semiconductor (CMOS) process. Thus, the IR cut filter and IR pass filter combined with conventional color filters are considered successfully applicable to 3D image sensors.

• Elastomers and Composites
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• 제57권4호
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• pp.222-230
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• 2022

In this study, a low-heat additive with a crosslink structure was dispersed in asphalt to simultaneously lower the production temperature of, and to modify the asphalt binder. This low-heat additive was prepared by different feeding ratios of styrene-butadiene-styrene (SBS) and polyvinylchloride (PVC) as polymer modifiers, and ZnO as a crosslinking agent. In order to confirm the crosslinking density and compatibility of the crosslink structured low-heat additive with asphalt, surface free energy, swelling ratio, differential scanning calorimetry (DSC), and scanning electron microscope (SEM) parameters were carefully investigated to examine this relationship, and the role of the crosslink structured low-heat additive. In addition, by measuring the penetration and softening point of the asphalt binder, it was confirmed that it corresponds to PG 64-22. With increasing ZnO in the crosslink structured low-heat additive, the swelling ratio decreased, leading to an increase in crosslinking density. The crosslink structured low-heat additive and the asphalt binder were found to be compatible with each other by DSC and SEM analysis.

• 대한전자공학회논문지SD
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• 제44권6호
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• pp.89-93
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• 2007

본 논문은 3.3V, $0.35{\mu}m$ CMOS 기술을 이용하여 I/O 인터페이스를 설계, 검증하였다. LVDS (low-voltage differential signaling)는 차동전송 방식과 저 전압의 스윙으로 저 전력 고속의 데이터를 전송할 수 있다. 본 논문은 기존의 차동증폭기나 감지 증폭기를 사용한 LVDS와 달리 telescopic 증폭기를 이용하여 2.3 Gbps의 빠른 전송속도를 갖는 LVDS 고속 인터페이스를 구현하였다. LVDS의 표준을 모두 충족하였고 25.5mW의 전력소모를 갖는다. 이 회로는 삼성 $0.35{\mu}m$ CMOS 공정을 이용하여 설계하였으며, HSPICE를 통하여 검증하였다.

• 한국세라믹학회지
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• 제55권6호
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• pp.581-589
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• 2018

This work concentrated on the effect of different laser beams on the microstructure and dielectric properties of $BaTiO_3$ nanoparticles at different calcinations times during the gelling preparation step. The nanoparticles were prepared by the sol-gel method. A green (1000 mW, 532 nm) and red laser beam (500 mW, 808 nm), were applied vertically at the center of stirring raw materials. The samples were sintered at $1000^{\circ}C$ for 2, 4, and 6 h. X-ray diffraction (XRD) analysis showed that samples prepared under the green laser have the highest purity. The FT-IR spectra showed that the stretching and bending vibrations of TiO bond without any other bonds, which are compatible to the X-ray diffraction (XRD) results. Samples were characterized by transmission electron microscopy (TEM), Scan electron microscopy (SEM), and UV-Visible spectrophotometer. Characterization showed the samples prepared under the green laser to have the highest particle size (~ 50 nm) and transparency for all sintering durations. Laser beam effects on electrical characterization were studied. BT nanoparticles prepared under the green laser show the higher dielectric constant, which was found to increase with sintering temperature.

• 한국언어정보학회:학술대회논문집
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• 한국언어정보학회 2002년도 Language, Information, and Computation Proceedings of The 16th Pacific Asia Conference
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• pp.320-329
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• 2002

The issues in polysemy with respect to the verbs in WordNet will be discussed in this paper. The hypernymy/hyponymy structure of the multiple senses is observed when we try to build a bilingual network for Chinese and English. There are several types of polysemic patterns and a co-hypernym may have the same word form as its subordinates. Fellbaum (2000) dubbed autotroponymy that the verbs linked by mailer relation share the same verb form. However, her syntactic criteria seem not compatible to the hierarchies in WN. Either the criteria or the network should be reconducted. For most verbs in WN 1.7, polysemous relations are unlikely to extend over 3 levels of IS-A relation. Highly polysemous verbs are more complicated and may be involved in certain semantic structures. Semi-automatic sense grouping may be helpful for multimlinguital information retrieveal.

• 센서학회지
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• 제17권2호
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• pp.147-150
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• 2008

Multiple ZnO nanorod device detecting $NO_2$ gas was fabricated by sol-gel growth method and gas response characteristics were measured as a chemical gas sensor. The device is mainly composed of sensing electrode and sensing nano material. To acquire high sensitivity of the device for $NO_2$ gas it was heated by a heat chuck up to $400^{\circ}C$ The sensing part was easily made using the CMOS compatible process, for example, the large area and low temperature nano material growth process, etc. The sensors were successfully demonstrated and showed high sensitive response for $NO_2$ gas sensing.