• 한국세라믹학회지
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• 제32권6호
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• pp.653-658
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• 1995

Directional effect of applied pressure during sintering on the microstructure and fracture toughness of the heat-treated silicon nitride ceramics has been investigated. The specimens with a composition of 92Si3N4-8Y2O3(in wt%) were sintered at 172$0^{\circ}C$ by a hot press (HP ) and a hot isostatic press (HIP) and heat-treated for grain growth at 1800~20$0^{\circ}C$. The fracture toughness of the HP samples increased with the grain size while the fracture toughness of the HIP treated samples remained the same even though the grain growth occurred. This discrepancy was explained by a bimodal grain size distribution and large aspect ratio of the HPed samples and a monomodal grain size distributjion and samll aspect ratio of the HIP treated samples.

• Nuclear Engineering and Technology
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• 제47권4호
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• pp.424-433
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• 2015

The operating characteristics of hydrogen iodide (HI) decomposition for hydrogen production were investigated using the commercial computational fluid dynamics code, and various factors, such as hydrogen production, heat of reaction, and temperature distribution, were studied to compare device performance with that expected for device development. Hydrogen production increased with an increase of the surface-to-volume (STV) ratio. With an increase of hydrogen production, the reaction heat increased. The internal pressure and velocity of the HI decomposer were estimated through pressure drop and reducing velocity from the preheating zone. The mass of $H_2O$ was independent of the STV ratio, whereas that of HI decreased with increasing STV ratio.

• 한국재료학회지
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• 제30권4호
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• pp.169-175
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• 2020

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N₂ sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10^-3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N₂ gas in the Ar:N₂ gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N₂ gas ratio and large amount of N₂ gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N₂=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO₂-Si_xN_y thin film is satisfactory at 97 %.

• 한국추진공학회지
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• 제3권1호
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• pp.78-85
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• 1999

복기 추진제인 N-5 추진제에 4종의 금속선(Ag, Cu, Al, Ni-Cr선)을 삽입하여 연소 특성을 고찰하여 보았다. 금속선이 삽입된 복기 추진제의 연소속도 증가비($r_w$/$r_sb$)는 Ag선 > Cu선 > Al선 > Ni-Cr선의 순으로서 금속선의 열확산 계수의 크기 순과 일치하였다. 금속선을 삽입한 N-5추진제의 $r_w$/$r_sb$는 단열 불꽃 온도와 구조의 차이에 의하여 혼합형 추진제보다 작게 나타났다. 복기 추진제에 열확산 계수가 비교적 큰 Ag, Cu, Al선을 삽입한 경우, 금속선이 삽입되지 않은 추진제에서 나타난 plateau와 mesa 연소 특성이 사라진 반면 열확산 계수가 작은 Ni-Cr선을 삽입한 경우에서는 plateau와 mesa 연소 특성이 그대로 존재했다.

• 한국응용과학기술학회지
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• 제30권1호
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• pp.64-70
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• 2013

우리는 순환전압전류법에 의한 인지질(sphingomyelin)과 polyamic acid 혼합물의 단분자 LB막에 대한 전기화학적 특성을 조사하였다. Sphingomyelin과 polyamic acid 혼합물의 단분자 LB막은 ITO glass에 LB법을 사용하여 제막하였다. 전기화학적 특성은 $KClO_4$ 용액에서 3 전극 시스템으로 측정하였다. 측정 범위는 연속적으로 1650 mV로 산화시키고, 초기 전위인 -1350 mV로 환원시켰다. 주사속도는 각각 50, 100, 150, 200 및 250 mV/s로 설정하였다. 그 결과 sphingomyelin과 polyamic acid 혼합물의 LB막은 순환전압전류도표로부터 환원전류로 인한 비가역공정으로 나타났다. Sphingomyelin과 polyamic acid 혼합물 LB막에서 전해질농도가 0.1N과 0.2N에서 확산계수(D)는 각각 $2.67cm^2s^{-1}{\times}10^5$과 $5.23cm^2s^{-1}{\times}10^6$을 얻었다.

• 전자공학회논문지D
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• 제34D권2호
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• pp.27-37
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• 1997

Photoluminescent and cathodoluminescent charcteristics of inorganic luminescent materials were investigated ot develop possible phosphors for thin film electroluminescent (TFEL) device applications. Mg, Zn, and Photoluminescent and cathodoluminescent charcteristics of inorganic luminescent materials were investigated ot develop possible phosphors for thin film electroluminescent (TFEL) device applications. Mg, Zn, and $Si_3N_4$ powders were used to synthesize $(Mg_xZn_{1-x})SiN_2$ host materials. $Tb_4O_7$ and $Eu_2O_3$ powdrs were added as luminescent centers. Very sharp emission spectra of $Tb^{3+}$ ions were observed from $Mg._5Zn._5SiN_2:Tb$ sampels sintered at $1400^{\circ}C$ for an hour and the maximum intensity of emission spectra occured at wavelength of 550nm (green light). Synthetic conditions of $(Mg_xZn_{1-x})SiN_2:Eu$ phosphors were optimized for the hghest luminescence. The Eu concentrations were varied from 0.2% to 1.6%. Before firing, the powders were mixed using ballmills, methanol, acetone, or D.I. water. The Mg/Zn ratio also were varied from x=0.3 to x=0.7. The maximum PL intensity was obtained from a sample with 1.2% Eu concentration and the powder was mixed with methanol and dried before firing. The maximum intensity of the emission spectra occurred t the wavelength of 470nm(blue light). TFEL devices fabricated by using sputter deposition of $(Mg._3Zn._7)SiN_2:Eu$ phosphor layer showed yellowish white emission at the phosphor field of 2MV/cm.

• Transactions on Electrical and Electronic Materials
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• 제14권2호
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• pp.67-70
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• 2013

In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권10호
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• pp.505-509
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• 2004

The (Sr/sub 0.9/Ca/sub 0.1/)TiO₃(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO₂/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O₂ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[Å/min]. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of 100～500[℃]. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of -80～+90[℃]. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.273-273
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• 2010

Recently, extensive research on hetero-junction arrays has been reported owing to its unique band gaps dissimilar to that of homo-junctions. These hetero-junction devices can be used in laser, solar cells, and various sensors. We report on the facile method to fabricate SWCNTs/SnO2 nanowires hetero-junction arrays on flexible polyimide substrate. Each SWCNT field effect transistor (FET) and SnO2 nanowire FET exhibits the purely p- and n-type charactersistics with ohmic contact properties. Such formed pn-junctions showed rectification behaviors reproducibly with a rectification ratio of ${\sim}3{\times}103$ at 1 V and ideality factors about 12. The pn-junctions also showed a good gate modulation behavior.

• 천문학회지
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• 제33권2호
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• pp.97-110
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• 2000

Planetary nebulae provide a direct way to probe elemental abundances, their distributions and their gradients in populations in nearby galaxies. We investigate bulge planetary nebulae in M 31 and M 32 using the strong emission lines, H$\alpha$, He I, [O III], [N II], [S II] and [Ne III]. From the [O III] 4363/5007 line ratio and the [O II] 3727/3729, we determine the electron temperatures and number densities. With a standard modeling procedure (Hyung, 1994), we fit the line intensities and diagnostic temperatures, and as a result, we derive the chemical abundances of individual planetary nebulae in M 31 and M 32. The derived chemical abundances are compared with those of the well-known Galactic planetary nebulae or the Sun. The chemical abundances of M 32 appear to be less enhanced compared to the Galaxy or M 31.