• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.338-339
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• 2005

본 연구에서는 $Fe_2O_3$를 첨가한 $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr_xTi_{1-x})O_3$ 세라믹스에서 Zr/Ti 비 변화에 따른 소결 및 압전, 유전특성을 조사하였다. $0.4Pb(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3$+0.25Wt% $Fe_2O_3$ 계에서 Zr/(Ti+Zr)비(x)를 0.39에서 0.42까지 변화시킨 조성을 1100 - $1250^{\circ}C$ 온도에서 2시간 소결하여 이의 결정구조 및 미세조직을 분석하였고, 압전, 유전 특성 및 RAINBOW 액츄에이터로의 응용을 조사하였다. $1150^{\circ}C$에서 소결한 0.405 조성(x)에서 유전상수(${\varepsilon}r$) = 4669, 전기기계결합계수(kp) = 0.75, 압전상수($d_{33}$) = 810 pC/N의 우수한 특성 값을 나타내었으며, 닥터블레이드법에 의해 RAINBOW 액츄에이터를 제작하여 변위특성을 조사하였다.

• The Journal of the Petrological Society of Korea
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• v.12 no.3
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• pp.119-134
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• 2003

Yuksipryeong two-mica granite presents strongly peraluminous characteristics in both mineralogy and geochemistry. It has high aluminum saturation index with 1.15∼l.20 and high corundum with 2.20∼2.98 wt% CIPW norm. As the color index is <16% and FeO$\^$T/+ MgO + TiO$_2$is average 1.9 wt％, it corresponds to leucogranite. Yuksipryeong two-mica leucogranite shows negative linear trend for TiO$_2$, Al$_2$O$_3$, FeO, Fe$_2$O$_3$, MgO, CaO, K$_2$O, P$_2$O$\_$5/, Rb, Ba, and Sr as SiO$_2$increases, and the positive relation of Zr and Th, which result from feldspar, biotite, apatite and zircon fractionation. Pegmatitic dike has higher SiO$_2$and P$_2$O$\_$5/, but lower another major elements. Yuksipryeong two-mica leucogranite has lower Rb, but higher Ba and Sr than Manaslu, Hercynian two-mica leucogranites, and S-type granites in Lachlan Fold Belt. Pegmatitic dike has higher Rb and Nb but lower Ba, Sr, Zr, Th, and Pb contents than Yuksipryeong two-mica leucogranite, resulting in removing or mobilizing for some trace elements from the granitic melt. Yuksipryeong two-mica leucogranite has total REEs with 95.7∼l23.3 ppm, and chondrite-normalized REE pattern is very steep ((La/Yb)$\_$N/ = 6.9∼24.8), light REEs (LREEs)-enriched End heavy REEs (HREEs)- depleted pattern with low to moderate Eu anomalies (Eu/Eu＊= 0.7∼0.9). While pegmatitic dike has low total REEs with 7.0 ppm, and chondrite-normalized REE pattern is flat-pattern ((La/Yb)$\_$N/ = 2.1) with strong negative Eu anomalies (Eu/Eu＊= 0.2). The melt compositions having formed two-mica leucogranites depend on not only the source rock but also the amounts of the residual remaining after melting of source rocks. The CaO/Na$_2$O and Rb/Sr-Rb/Ba ratios depend mainly on the composition of source rocks in the strongly peraluminous granite, that is, plagioclase/clay ratio of the source rocks. Yuksipryeong two-mica leucogranite has higher CaO/Na$_2$O and lower Rb/Sr-Rb/Ba ratios than Manaslu and Hercynian two-mica leucogranites (Millevaches and Gueret) derived from clay-rich, plagioclase-poor (polite), which suggest that the probable source rocks for Yuksipryeong two-mica leucogranite is clay-poor, plagioclase-rich quartzofeldspathic rocks. As the concentrations of Al$_2$O$_3$remain nearly constant but those of TiO$_2$increases as increasing temperature in the strong peraluminous melt, the Al$_2$O$_3$/TiO$_2$ratio may reflect relative temperature at which the melts have formed. Comparing the polite-derived Manaslu and Hercynian two- mica leucogranites, Manaslu two-mica leucogranite has higher Al$_2$O$_3$/TiO$_2$ratio than latter, and its melt have formed at relatively lower temperature ($\leq$ 875$^{\circ}C$) than Hercynian two-mica leucogranites. Likewise, comparing the quartzofeldspathic rock-derived granites, Yuksipryeong two-mica granite has higher Al$_2$O$_3$/TiO$_2$, ratio than S-type granites in Lachlan Fold Belt (>875$^{\circ}C$). The melt formed Yuksipryeong two-mica leucogranite are considered to have been formed at temperature at below the maximum 875$^{\circ}C$C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.650-656
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• 1995

High frequency SAW filters for cellular communications were fabricated by metallizing 36$^{\circ}$Y-X LiTaO$_3$piezoelectric substrate with IIDT type electrodes. It was found that the center frequency of the filter was lowered than as designed. In order to overcome such a drawback and enable a fine tuning of its center frequency, dielectric SiN$_{x}$ thin films were deposited on LiTaO$_3$substrate by PECVD as passivation layer and then frequency responses were also characterized. As a result, the center frequency of the filter could be shifted to a higher frequency with increasing the thickness of SiN$_{x}$ film, because SAW velocity increased with increasing the ratio of the thickness of dielectric thin film to wavelength. The insertion loss of the filter, however, became larger with increasing the thickness of SiN$_{x}$ film.

• Applied Chemistry for Engineering
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• v.31 no.1
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• pp.108-114
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• 2020

In this study, NH₃-selective catalytic oxidation (SCO) efficiencies according to calcination/reduction conditions were compared when preparing various Ru[1]/TiO₂ catalysts. The Ru[1]/TiO₂ red catalyst had better NH₃ conversion and NH₃ to N₂ conversion than those of Ru[1]/TiO₂ cal. Physico-chemical properties of Ru[1]/TiO₂ catalysts were confirmed by Brunauer Emmett Teller (BET), X-ray diffraction (XRD), transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS) and temperature programmed reduction (H₂-TPR) analyses, and the properties were shown to affect the dispersion and surface adsorption oxygen species (O_β) ratio of the active metal.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.100-102
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• 2001

In this paper, the piezoelectric and dielectric properties of $Pb(Zr_xTi_{1-x)O_3$ - $Pb(Co_{1/3}Nb_{1/3})O_3)$ piezoelectric ceramics have been investigated as a function of Zr/Ti mole ratio. From the results, when Zr/Ti mole ratio is 49/51, electromechanical coupling coefficient($k_p$), piezoelectric strain constant($d_{33}$) mechanical quality factor($Q_m$), and Permittivity(${{\varepsilon}_{33}}^T/{\varepsilon}_0$) is 64[%], 469[PC/N], 360 and 2000, respectively. Morphotropic Phase Boundary is Zr/Ti mole ratio(49/51) from XRD analysis. Also. From SEM observation, when sintering temperature is 1150[$^{\circ}C$], grain size is about $1{\sim}2[{\mu}m]$ and maximum sintering density is 7.85[$g/cm^3$].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.304-308
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• 2012

Transparent thin film transistors (TTFT) were fabricated using the rf magnetron sputtered ZnO-$SnO_2$ films as active layers. A ceramic target whose Zn atomic ratio to Sn is 2:1 was employed for the deposition of ZnO-$SnO_2$ films. To study the post-annealing effects on the properties of TTFT, ZnO-$SnO_2$ films were annealed at $200^{\circ}C$ or $400^{\circ}C$ for 5 min before In deposition for source and drain electrodes. Oxygen was added into chamber during sputtering to raise the resistivity of ZnO-$SnO_2$ films. The effects of oxygen addition on the properties of TTFT were also investigated. 100 nm $Si_3N_4$ film grown on 100 nm $SiO_2$ film was used as gate dielectrics. The mobility, $I_{on}/I_{off}$, interface state density etc. were obtained from the transfer characteristics of ZnO-$SnO_2$ TTFTs.

• Journal of the Semiconductor & Display Technology
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• v.5 no.4 s.17
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• pp.5-9
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• 2006

The SCT thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with Sr/Ca ratio. The maximum grain of thin films is obtained by ratio of Ca at 15 mol%. The dielectric constant was increased with increasing the ratio of Ca, while it was decreased if the ratio of Ca exceeded over 15 mol%. The dielectric constant changes almost linearly in temperature ranges of $-80{\sim}+90$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200 kHz. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the measuring temperature increases.

• Korean Journal of Materials Research
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• v.16 no.6
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• pp.355-359
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• 2006

Fine silica powders were synthesized via w/o emulsion method using sodium silicate, ammonium sulfate, Triton N-57, and cyclohexane as silica source, precipitating agent, surfactant, and oil phase, respectively. The powders were prepared under a conventional process and an ultrasonic process using the same reactants at room temperature for 1 hr varying the concentration of $Na_2SiO_3$ solution and the mol ratio of $H_2O$/surfactant, respectively. The particle size of the silica powder was reduced with decreasing the concentration of sodium silicate solution and with increasing the mol ratio of $H_2O$/surfactant under with and without ultrasounds. The size of powder with ultrasounds was smaller than that without ultrasounds, which indicates that the application of ultrasound in the synthesis of silica powder is an efficient way to reduce particle size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.4
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• pp.348-352
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• 2022

Resistive switching behaviors of a co-sputtered zinc silicate thin film (ZnO and SiO₂ targets) have been investigated. We fabricated an Ag/ZnSiO_x/highly doped n-type Si substrate device by using an RF magnetron sputter system. X-ray diffraction pattern (XRD) indicated that the Zn₂SiO₄ was formed by a post annealing process. A unique morphology was observed by scanning electron microscope (SEM) and atomic force microscope (AFM). As a result of annealing process, 50 nm sized nano clusters were formed spontaneously in 200~300 nm sized grains. The device showed a unipolar resistive switching process. The average value of the ratio of the resistance change between the high resistance state (HRS) and the low resistance state (LRS) was about 106 when the readout voltage (0.5 V) was achieved. Resistance ratio is not degraded during 50 switching cycles. The conduction mechanisms were explained by using Ohmic conduction for the LRS and Schottky emission for the HRS.