• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.204-209
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• 2006

Photo Resist (PR) ashing process was carried out with the atmospheric pressure- dielectric barrier discharge (ADBD) using $SF_6/N_2/O_2$. Ashing rate (AR) was sensitive to the mixing ratio of the oxygen and nitrogen of the blower type of ADBD asher. The maximum AR of 5000 A/min was achieved at 2% of oxygen in the $N_2$ plasma. With increasing the oxygen concentration to more than 2% in the $N_2$ plasma, the discharge becomes weak due to the high electron affinity of oxygen, resulting in the decrease of AR. When adding 0.5% of SF6 to $O_2/N_2$ mixed plasma, the PR AR increased drastically to 9000 A/min and the ashed surface of PR was smoother compared to the processed surface without $SF_6$. Carbon Fluorinated polymer may passivate the PR surface. It was also observed that the glass surface was not damaged by the fluorine.

• Bulletin of the Korean Chemical Society
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• v.29 no.3
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• pp.585-589
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• 2008

Second-order rate constants (kN) have been measured for reactions of Y-substituted phenyl 2-thiophenecarboxylates (6a-h) with morpholine and piperidine in 80 mol % H2O/20 mol % DMSO at 25.0 0.1 oC. The Brnsted-type plot for the reactions of 6a-h with morpholine is linear with b lg = 1.29, indicating that the reactions proceed through a tetrahedral zwitterionic intermediate (T?). On the other hand, the Brnsted-type plot for the reactions of 6a-h with piperidine exhibits a downward curvature, implying that a change in the rate-determining step occurs on changing the substituent Y in the leaving group. Dissection of kN into microscopic rate constants (i.e., k1 and k2/k1 ratio) has revealed that k1 is smaller for the reactions of 6a-h than for those of Y-substituted phenyl 2-furoates (5a-h), while the k2/k1 ratio is almost the same for the reactions of 5a-h and 6a-h. It is also reported that modification of the nonleaving group from the furoyl (5a-h) to the thiophenecarbonyl (6a-h) does not influence pKao (defined as the pKa at the center of the Brnsted curvature) as well as the k2/k1 ratio.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.1
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• pp.65-73
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• 1986

Experiment have been conducted about thin oxide characteristics according to O2/N2 ratio needed for EEPROM cell fabrication. As a result, we think that there is no problem even if we grow oxide layer with large O2/N2 ratio and short exidation time and when the water is implated by As before oxidation, the oxide breakdown field is about IMV/cm lower than that is not implanted. Especially, the thin oxide characteristic seems to be affected largely by wafer cleaning and oxidation in air. On the basis of these, tunnel type EEPROM cell is fabricated by 3um CMOS process and its characteristic is studied. Tunnel oxide thickness(100\ulcorner is chosen to allow Fowler-Nordheim tunneling to charge the floating gate at the desired programming voltage and tunnel area(2x2um\ulcorneris chosen to increase capacitive coupling ratio. For program operation, high voltage (20-22V) is applied to the control gate, while both drain and source are gdrounded. The drain voltage for erase is 16V. It is shown that charge retention characteristics is not limited by leakage in the oxide and program/erase endurance is over 10E4 cycles of program erase operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.104-104
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• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.732-737
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• 2000

Plasma enhanced chemical vapor deposition of $TiO_{2$\pm}{\delta}$ has been carried out using TEMAT [tetrakis(ethylmethylamido) titanium] and $H_2$. Increasing the power from 300 W to 500 W produced the high density plasma, leading to the formation of TiO$_2$films with an increased ratio of Ti to O and a negligible amount of C and N. Applying the bias of 30W to the substrate in creased the growth rate of the film with a slightly increased content of Ti in the film. In addition, $H_2O$ was from either the residual gas in the gase pressure or $H_2(/He)$ gas and actively participated in the formation of $TiO_2$ films. Consequently, Ti ions created in the plasma could be a main contributor to $TiO_2$ formation with a slight amount of $H_2O(~10^{-4}Toor)$ in the ambient, which provided the dissociation of TEMAT.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.5-8
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• 2003

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

• 한국해양학회지
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• v.27 no.3
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• pp.250-258
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• 1992

The oxygen isotope composition of surface waters in the Bransfield Strait was determined as one extra state variable in order to characterize water masses in the region, since salinity is significantly modified due to the freezing and ice-melting in the polar region. The salinity, temperature, and $\delta$/SUP 18/O values vary from 34.0 to 34.5$\textperthousand$, -.05 to 2.1$^{\circ}C$ and -0.50 t -0.26$\textperthousand$, respectively. The combined effects of evaporation, precipitation, freezing, ice-melting are reflected in the widely scattered data. Although it is small, the distribution of $\delta$/SUP 18/O of the Bransfield Strait is strongly affected by the freezing-ice melting rather than the evaporation-precipitation. The ice melted fresh water which has higher temperature, depleted salinity and nutrients may be injected to the Bransfield Strait from the north. The concentrations of nutrients are decreasing gradually from the north to the south. The waters were characterized by two groups of higher (about 19.4) and lower N/P ratio (about 16.7). The lower N/P ratio is found in the northern part where ice-melted fresh water is injected. and the higher N/P ratio is found in the southern part of the Bransfield Strait. Although more precise work is needed, the deference of N/P ratio can be an evidence of the ice melted water injection to the Bransfield Strait. Chlorophyll a concentrations, in general, increase from northwest (Waddell Sea) to the southeast (Smith and Hosseason Islands). Probably the injection of nutrient depleted fresh water from the ice melting reduce the chlorophyll a concentration.

• Journal of the Korean Chemical Society
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• v.56 no.2
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• pp.228-235
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• 2012

A $N_2O_2$ Schiff base ligand, N,N'-bis(4-methoxysalicylidene)phenylendiamine (4-$CH_3O$-salphen) was synthesized. Using the 4-$CH_3O$-salphen, the spectrophoto-metric quantitative analysis of Cu(II) ion in aqueous solution was performed. The optimum condition for the quantitative analysis of Cu(II) ion was determined as the following; the concentration of 4-$CH_3O$-salphen is $2.0{\times}10^{-4}\;mol/L$, ratio between solvent DMSO and water is 50/50(v/v), pH is 5.5. After 1 hr water incubation at $55^{\circ}C$ and then the absorbance measurements at 388 nm, a calibration curve (${\varepsilon}=3.6{\times}10^4\;mol^{-1}cm^{-1}$) with a correlation coefficient ($R^2$=0.9963) was obtained in this condition. Using this optimized condition, the quantitative analysis of Cu(II) ion was performed with various samples such as hot spring water, semiconductor factory waste water and treated water from sewage treatment plant. The average value of the measured values agreed well with standard value with a range of 0.6~5.4%. The limit of determination was 31.77 ng/mL ($5.0{\times}10^{-7}\;mol/L$).

• Journal of the Korean Ceramic Society
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• v.44 no.1 s.296
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• pp.1-5
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• 2007

Fining and homogenization of melts during batch melting is closely related to the redox reaction of polyvalent element M (M: Sb, As etc), $M^{(x+n)+}+n/2O^{2-}{\rightarrow}M^{x+}+n/4O_2$. In this study, square wave voltammetry (SWV) measurements were performed to examine the redox behavior of an antimony ion in cathode ray tube (CRT) glass melts. According to results, well-separated two peaks are shown at low temperature while only one peak is shown at high temperature in voltammograms, which reveals that redox reaction of antimony consist of two steps: $Sb^{5+}/Sb^{3+}\;and\;Sb^{3+}/Sb^0$, depending on the temperature. Based on the peak potential shown in the voltammogram, the thermodynamic data and the redox ratio for two redox couple were determined.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.410-414
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• 2013

We report the wet etching of titanium nickel (TiNi) films for the production of nano-electro-mechanical (NEM) device. $SiO_2$ and $Si_3N_4$ have been selected as sacrificial layers of TiNi metal and etched with polyethylene glycol and hydrofluoric acid (HF) mixed solution. Volume percentage of HF are varied from 10% to 35% and the etch rate of the $SiO_2$, $Si_3N_4$ and TiNi are reported here. Within the various experiment results, 15% HF mixed polyethylene glycol solution show highest etch ratio between sacrificial layer and TiNi metal. Especially $Si_3N_4$ films shows high etch ratio with TiNi films. Wet etching results are measured with SEM inspection. Therefore, this experiment provides a novel method for TiNi in the nano-electro-mechanical device.