• Journal of the Korean Ceramic Society
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• v.21 no.1
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• pp.11-18
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• 1984

$eta$-Sialon synthesis was investigated via the simultaneous reduction and nitridation of Hadong Pink Kaolin using the graphite as a reducing agent at 135$0^{\circ}C$ under 80% $N_2-20%H_2$ atmosphere. When Hadong Pink Kaolin-graphite-silicon nitride seed(molar ratio ; $SiO_2:C:Si_3N_4$=1;3.5:0.05) mixture was heated at 135$0^{\circ}C$ for as long as 20h in 80%$N_2-20%H_2$ atmosphere a homogeneous $eta$-Sialon$(Si_{3.5}Al_{2.5}O_{2.5}N_{2.5})$ was mainly formed together with a small amount of $\alpha$-$Si_3N_4$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.390.2-390.2
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• 2016

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was coated before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction by combining of p-type NiO and n-type ZnO. A functional template of ITO nanowires was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.808-812
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• 2015

Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction of p-type NiO and n-type ZnO. A functional template of ITO nanowires (NWs) was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.1
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• pp.27-31
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• 2013

Copper-oxide (CuO) thin films were prepared by reactive sputtering of Cu onto Si wafers and characterized using a statistical design of experiments approach. The most significant factor in controlling the electrical resistivity and deposition rate was determined to be the $O_2$ fraction. The deposited CuO thin films were characterized in terms of their physical and chemical properties, using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), X-ray diffraction (XRD), and 4-point resistance measurements. The deposited copper thin films were characterized by XPS and XRD analyses to consist of $Cu^{2+}$. The CuO thin films of highest resistivity exhibited superior rectifying responses with regard to n-type Si wafers, with a current ratio of $3.8{\times}10^3$. These superior responses are believed to be associated with the formation of a charge-depletion region originating from the p-type CuO and n-type Si materials.

• Bulletin of the Korean Chemical Society
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• v.25 no.6
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• pp.859-864
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• 2004

The solid solutions of the $Sr_{1-x}Ba_xFeO_{3-y)$ system (x = 0.0, 0.1, 0.2 and 0.3) having a perovskite structure were prepared in air at 1423 K and then heat-treated in air (A), $O_2(O)\;and\;N_2(N)$ to examine possibility of controlling the nonstoichiometry and applicability as an additive for electrical conducting inorganic adhesives (ECIA). In the samples heated in $N_2$ stream, there existed almost no $Fe^{4+}$ ions, and at constant temperature their electrical conductivities were considerably lower than those of the samples heat-treated in air or $O_2.\; Sr_{0.8}Ba_{0.2}Fe^{3+}_{0.49}Fe^{4+}_{0.51}O_{2.76}$ (SB2-A) whose $Fe^{3+}/Fe^{4+}$ ratio was nearly 1 (0.96) and whose conductivity values (1.04 $ohm^{-1}cm^{-1}$ at 283 K and 1.88 $ohm^{-1}cm^{-1}$ at 673 K) were higher than any other samples, was found to be the best additive for ECIA.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.72-74
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• 2004

In this study, we used a inductively coupled plasma (ICP) source for etching $Al_2O_3$ thin films because of its high plasma density, low process pressure and easy control bias power. $Al_2O_3$ thin films were etched using $Cl_2/BCl_3$, $N_2/Cl_2/BCl_3$, and Ar/$Cl_2/BCl_3$ plasma. The experiments were carried out measuring the etch rates and the selectivities of $Al_2O_3$ to $SiO_2$ as a function of gas mixing ratio, rf power, and chamber pressure. When $Cl_2$ 50% was added to $Cl_2/BCl_3$ plasma, the etch rate of the $Al_2O_3$ films was 118 nm/min. We also investigated the effect of gas addition. In case of $N_2$ addition, the etch rate of the $Al_2O_3$ films decreased while $N_2$ was added into $Cl_2/BCl_3$ plasma. However, the etch rate increased slightly as Ar added into $Cl_2/BCl_3$ plasma, and then further increase of Ar decreased the etch rate. The maximum etch rate was 130 nm/min at Ar 20% in $Cl_2/BCl_3$ plasma, and the highest etch selectivity was 0.81 in $N_2$ 20% in $Cl_2/BCl_3$ plasma. And, we obtained the results that the etch rate increases as rf power increases and chamber pressure decreases. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES).

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.564-568
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• 2006

AlO(OH) nano gel is used in precursor of ceramic material, coating material and catalyst. For use of these, not only physiochemical control for particle morphology, pore characteristic and peptization but also studies of synthetic method for preparation of advanced application products were required. In this study, AlO(OH) nano gel was prepared through the aging and drying process of aluminum hydroxides gel precipitated by the hydrolysis reaction of dilute NaOH solution and aluminum sulfate solution. In this process, optimum synthetic condition of AlO(OH) nano gel having excellent pore volume as studying the effect of water and aluminum sulfate mole ratio on gel precipitates has been studied. Water and aluminum sulfate mole ratio brought about numerous changes on crystal morphology, surface area, pore volume and pore size. Physiochemical properties were investigated as using XRD, TEM, TG/DTA, FT-IR, and $N_2$ BET method.

• Journal of Korean Society of Environmental Engineers
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• v.28 no.4
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• pp.402-406
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• 2006

N-Nitrosodimethylamine(NDMA) formation was studied as a function of chloramine concentration at a fixed dimethylamine (DMA) concentration of 0.05 mM at pH 7 and 8. Regression equations were developed by molar ratio of chloramine to DMA. The NDMA formation was dependent on molar ratio(chloramine/DMA) and was different when the ratio is less or greater than 1. The formation of NDMA increased with increasing chloramine concentration and a linear correlation was examined between NDMA concentration and the ratio on a log scale. The developed regression was applied to previously reported data and relative errors ranged from -79 to 163%. Regression equations could provide a potential tool to predict NDMA formation for a simple and quick estimation in water supply systems.

• Journal of the Korean Ceramic Society
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• v.29 no.5
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• pp.357-366
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• 1992

Residual organics were considered as impurity in Sol-Gel method. The purpose of this study was to find the conditions to contain as much residual organics as possible in silica gel prepared from TEOS(tetraethylortho-silicate) by Sol-Gel method. Residual organics are to be expected to have reduction effect on synthesizing Si3N4 from silica gel. The results of this study are follows: 1) The maximum content of entrapped carbon was 19.8 wt.%(C/SiO2=0.25 wt.ratio) in silica gel synthesized under the conditions 1.5 fold mole water for incomplete hydrolysis, 2.5 fold mole phenol as a solvent and 0.1 fold mole HCl as a catalyst to TEOS. 2) Silica gel with organics entrapped by Sol-Gel method had a positive effect on the formation of Si3N4 compared with commercial silica gel. 3) Sintered body of synthesized $\alpha$-Si3N4 with Y2O3 and Al2O3 as additives at 175$0^{\circ}C$ in N2 atmosphere showed bending strength, 602$\pm$20 MPa and frature toughness 4.45$\pm$0.15 MPa.m1/2.

• Journal of the Korean Magnetic Resonance Society
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• v.18 no.2
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• pp.74-81
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• 2014

The $N_2O_2$ tetradentate Schiff base ligand, N,N'-bis(salicylidene)pentane-1,3-diamine (Salpn), coupled with 1:2 concentration ratio of 1,3-diaminopentane and salicylaldehyde was used to produce a series of macrocyclic Nikel(II) complexes. In the metal complexation, it was observed that Salpn macrocyclic ligand can adopt more than a metal ion giving an unique multinuclear metal complexes including Ni(II)Salpn and $Ni(II)_3(Salpn)_2$. Characteristic IR ${\upsilon}(M-O)$ peaks for Ni(II)Salpn and $Ni(II)_3(Salpn)_2$ were observed to be $1028cm^{-1}$ and $1024cm^{-1}$, respectively. Characteristic UV-Vis absorption ${\lambda}_{max}$ peaks for $Ni(II)_3(Salpn)_2$ were observed to be 241nm and 401 nm. Structural characterization of $Ni(II)_3(Salpn)_2$ by NMR exhibits that the salicylidene ring moiety has two different resonance signals originated from the magnetically asymmetric diligand and trinuclear bis complex. Complete NMR signal assignments and characterizations elucidating structural features of $Ni(II)_3(Salpn)_2$ were described in detail.