• Proceedings of the Korea Multimedia Society Conference
• /
• 1998.04a
• /
• pp.366-370
• /
• 1998

One major limitation of the efficiency of parallel computer designs has been the prohibitively high cost of parallel communication between processors and memories. Linear order concentrators can be used to build theoretically optimal interconnection schemes. Current designs call for building superconcentrators from concentrators, then using these to recursively partition the connection streams O(log2N) times to achieve point-to-point routing. Since the superconcentrators each have O(N) hardware complexity but O(log2N) depth, the resulting networks are optimal in hardware, but they are of O(log2N) depth. This pepth is not better than the O(log2N) depth Bitonic sorting networks, which can be implemented on the O(N) shuffle-exchange network with message passing. This paper introduces a new method of constructing networks using linear order concentrators and expanders, which can be used to build interconnection networks with O(log2N) depth as well as O(Nlog2N) hardware cost. (All logarithms are in base 2 throughout paper)

• Korean Journal of Materials Research
• /
• v.23 no.3
• /
• pp.161-167
• /
• 2013

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at $200^{\circ}C$ and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

• Journal of the Korean Chemical Society
• /
• v.22 no.5
• /
• pp.295-303
• /
• 1978

The dipole moments for octahedral [Co(III)-$O_3N_3$], tetrahedral [M(II)-$O_2N_2$] and square planar [M(II)-$O_2N_2$] types complexes are calculated by the expansion method for spherical harmonics using the valence basis sets for the central metal ion and the single basis set orbital ($2p_z$) for ligands. The calculated dipole moments for these complexes are in agreement with the experimental values.

• Bulletin of the Korean Chemical Society
• /
• v.23 no.6
• /
• pp.851-856
• /
• 2002

The Reaction of S-methyl-S-cysteine(L-Smc) with racemic $s-cis-[Co(demba)Cl_2]-1$ (Hydmedba = $NN'-dimethylethylenediamine-NN'-di-\alpha-butyric$, acid) yields ${\Delta}$-s-cis-[Co(dmedba)(L-Smc)] 2 with N, O-chelation. Oxidation of sulfur of 2 with $H_2O_2$ in a 1 : 1 mole ratio gives ${\Delta}$-s-cis[Co(dmedba)(L-S(O)mc)] 3 having an uncoordinated sulfenate group. Oxidation of sulfur of L-Sm with $H_2O_2in$ a 1: 1 mole ratio produces S-methyl-L-cysteinesulfenate (L-S(O)me) 5. Direct reaction of 1 with 5 in basic medium gives an N.O-chelated ${\Delta}$s-cis[Co(dmedba)(L-S(O)mc)-N.O], which turmed out be same as obtained by oxidation of 2, while an N, S-chelated ${\Delta}$-s-cis-[Co(dmedba)(S-S(O)mc)-N,O] complex 4 is obtained in acidic medium from the reaction of 1 with 5. This is one of the rare $[$Co^{III}$(N_2O_2-type$ ligand)(amino acid)] type complex preparations, where the reaction conditions determine which mode of N, O and N, S caelation modes is favored.

• 전자공학회논문지 IE
• /
• v.43 no.2
• /
• pp.7-10
• /
• 2006

A GaN-based metal-insulator-semiconductor (MIS) structure has been fabricated by using $BaTa_2O_6$ instead of conventional oxide as insulator gate. The leakage current o) films are in order of $10^{-12}-10^{-13}A/cm^2$ for GaN on $Al_2O_3$(0001) substrate and in order of $10^{-6}-10^{-7}A/cm^2$ for GaN on GaAs(001) substrate. The leakage current of thses films is governed by space-charge-limited current over 45 MV/cm in case of GaN on $Al_2O_3$(0001) substrate and by Poole-Frenkel emission in case of GaN on GaAs(001).

• Journal of IKEEE
• /
• v.17 no.2
• /
• pp.182-188
• /
• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• Journal of Environmental Science International
• /
• v.16 no.8
• /
• pp.913-920
• /
• 2007

Hydrochloride acid salts of new $N_2O_2$ tetradentate ligands containing amine and phenol N,N'-bis(2-hydroxybenzyl)-o-phenylenediamine(H-BHP), N,N'-bis(5-bromo-2-hydroxybenzyl)-o-phenylenediamine(Br-BHP), N,N'-bis(5-chloro-2-hydroxybenzyl)-o-phenylene-diamine(Cl-BHP), N,N'-bis(5-methyl-2-hydroxybenzyl)-o-phenylene-diamine (Me-BHP) and N,N'-bis(5-methoxy-2-hydroxybenzyl)-o-phenylenediamine(MeO-BHP) were synthesized. The ligands were characterized by elemental analysis, mass and NMR spectroscopy. The elemental analysis showed that the ligands were isolated as dihydrochloride salt. The potentiometry study revealed that the proton dissociation constants$(logK_n{^H})$ of ligands and stability constants $(logK_{ML})$ of transition and heavy metals complexes. The order of the stability constants of each metal ions for ligands was Br-BHP < Cl-BHP > H-BHP < MeO-BHP < Me-BHP.

• Bulletin of the Korean Chemical Society
• /
• v.28 no.12
• /
• pp.2369-2376
• /
• 2007

N2O has been found from experimental and theoretical considerations to bind on-top to the Pd(110) surface in a tilted end-on fashion via its terminal N atom. We use a frontier orbital description of the bonding interactions in the Pd-N2O system to obtain molecular insight into the catalytic mechanism of the activation of N2O by the Pd(110) surface giving rise to the formation of N2 and O on the surface. For the tilted end-on N2O binding mode, the LUMO 3π of N2O has good overlap with the Pd dσ and dπ orbitals which can serve as the electron donors. The donor-acceptor orbital overlap is favorable for electron transfer from Pd to N2O and is expected to dominate the surface reaction pathway of N2O decomposition.

• Journal of ILASS-Korea
• /
• v.25 no.3
• /
• pp.132-138
• /
• 2020

N₂O is hazardous atmosphere pollution matter which can damage the ozone layer and cause green house effect. There are many other nitrogen oxide emission control but N₂O has no its particular method. Preventing further environmental pollution and global warming, it is essential to control N₂O emission from industrial machines. In this study, the thermal decomposition experiment of N₂O gas mixture is conducted by using cylindrical reactor to figure out N₂O reduction and NO formation. And CHEMKIN calculation is conducted to figure out reaction rate and mechanism. Residence time of the N₂O gas in the reactor is set as experimental variable to imitate real SNCR system. As a result, most of the nitrogen components are converted into N2. Reaction rate of the N₂O gas decreases with N₂O emitted concentration. At 800℃ and 900℃, N₂O reduction variance and NO concentration are increased with residence time and temperature. However, at 1000℃, N₂O reduction variance and NO concentration are deceased in 40s due to forward reaction rate diminished and reverse reaction rate appeared.

• Korean Chemical Engineering Research
• /
• v.49 no.3
• /
• pp.357-360
• /
• 2011

N-doped ZnO nanofilms were prepared by plasma enhanced atomic layer deposition method. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ and $N_{2}$ were used as Zn, O and N sources, respectively, for N-doped ZnO films under variation of radio frequency (rf) power from 50-300W. Structural, optical and electrical properties of as-grown ZnO films were investigated with Xray diffraction(XRD), photoluminescence(PL) and Hall-effect measurements, respectively. Nitrogen content and p-type conductivity in ZnO nanofilms increased with the rf power.