• 제목/요약/키워드: O&M Cost

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SmBCO 초전도 층착을 위한 RABiTS상의 CeO2 단일 버퍼 연구 (Study on CeO2 Single Buffer on RABiTS for SmBCO coated Conductor)

  • 김태형;김호섭;이남진;하홍수;고락길;하동우;송규정;오상수;박경채
    • 한국전기전자재료학회논문지
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    • 제20권6호
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    • pp.546-549
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    • 2007
  • As a rule, high temperature superconducting coated conductors have multi-layered buffers consisting of seed, diffusion barrier and cap layers. Multi-buffer layer deposition requires longer fabrication time. This is one of main reasons which increases fabrication cost. Thus, single buffer layer deposition seems to be important for practical coated conductor process. In this study, a single layered buffer deposition of $CeO_2$ for low cost coated conductors has been tried using thermal evaporation technique. 100 nm-thick $CeO_2$ layers deposited by thermal evaporation were found to act as a diffusion layer. $1\;{\mu}m-thick$ SmBCO superconducting layers were deposited by thermal co-evaporation on the $CeO_2$ buffered Ni-5%W substrate. Critical current of 90 A/cm was obtained for the SmBCO coated conductors.

$CeO_2$ 단일 완충층을 이용한 SmBCO 초전도테이프 제조 (Fabrication of SmBCO coated conductors using $CeO_2$ single buffer layers)

  • 김태형;김호섭;하홍수;오상수;양주생;하동우;송규정;이남진;정예현;박경채
    • 한국초전도ㆍ저온공학회논문지
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    • 제8권3호
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    • pp.32-36
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    • 2006
  • Simplification of the buffer architecture in the fabrication of coated conductors is required because the deposition of multi-layers leads to a longer production time and a higher cost of coated conductors. In this study, a single layered buffer deposition of $CeO_2$ for low cost coated conductors has been tried using thermal evaporation technique. l00nm-thick $CeO_2$ layers deposited by thermal evaporation were found to act as a diffusion layer. $0.4{\mu}m$-thick SmBCO superconducting layers were deposited by thermal co-evaporation on the $CeO_2$ buffered Ni-W substrate. Critical current of $55.4 A/cm^2$ was obtained for the SmBCO coated conductors.

나노입자 이산화티타늄 전극 기반의 고효율 전기화학형 발광 셀 제작 (Fabrication of High-Efficiency Electrochemiluminescence Cell with Nanocrystalline TiO2 Electrode)

  • 권혁문;한치환;성열문
    • 전기학회논문지
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    • 제59권2호
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    • pp.363-368
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    • 2010
  • In this work, electrochemiluminescence (ECL) cell using nanocrysralline $TiO_2$ electrode and Ru(II) complex (Ru${(bpy)_3}^{2+}$) is fabricated for low-cost high-efficient energy conversion device application. The nanocrysrallme $TiO_2$ layer (${\sim}10{\mu}m$ thickness) with large surface area (${\sim}360m^2$/g) can largely inject electrons from nanoporous $TiO_2$ electrode and allows the oxidation/reduction of Ru(II) complex in the nanopores. The cell structure is composed of a glass/ F-doped $SnO_2$(FTO)/ porous $TiO_2$/ Ru(II) complex in acetonitrile/ FTO/ glass. The nanocrysralline $TiO_2$ layer is prepared using sol-gel combustion method. The ECL efficiency of the cell consisting of the porous $TiO_2$ layers was 250 cd/W, which was higher than that consisting of only FTO electrode (50cd/W). The nanoporous $TiO_2$ layers wwas effective for increasine ECL intensities.

High Performance RF Passive Integration on a Si Smart Substrate for Wireless Applications

  • Kim, Dong-Wook;Jeong, In-Ho;Lee, Jung-Soo;Kwon, Young-Se
    • ETRI Journal
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    • 제25권2호
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    • pp.65-72
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    • 2003
  • To achieve cost and size reductions, we developed a low cost manufacturing technology for RF substrates and a high performance passive process technology for RF integrated passive devices (IPDs). The fabricated substrate is a conventional 6" Si wafer with a 25${\mu}m$ thick $SiO_2$ surface. This substrate showed a very good insertion loss of 0.03 dB/mm at 4 GHz, including the conductive metal loss, with a 50 ${\Omega}$ coplanar transmission line (W=50${\mu}m$, G=20${\mu}m$). Using benzo cyclo butene (BCB) interlayers and a 10 ${\mu}m$ Cu plating process, we made high Q rectangular and circular spiral inductors on Si that had record maximum quality factors of more than 100. The fabricated inductor library showed a maximum quality factor range of 30-120, depending on geometrical parameters and inductance values of 0.35-35 nH. We also fabricated small RF IPDs on a thick oxide Si substrate for use in handheld phone applications, such as antenna switch modules or front end modules, and high-speed wireless LAN applications. The chip sizes of the wafer-level-packaged RF IPDs and wire-bondable RF IPDs were 1.0-1.5$mm^2$ and 0.8-1.0$mm^2$, respectively. They showed very good insertion loss and RF performances. These substrate and passive process technologies will be widely utilized in hand-held RF modules and systems requiring low cost solutions and strict volumetric efficiencies.

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$CeO_2$ Single Buffer Deposition on RABiTS for SmBCO Coated Conductor

  • Kim, T.H.;Kim, H.S.;Ha, H.S.;Yang, J.S.;Lee, N.J.;Ha, D.W.;Oh, S.S.;Song, K.J.;Jung, Y.H.;Pa, K.C.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.180-181
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    • 2006
  • As a rule, high temperature superconducting coated conductors have multi-layered buffers consisting of seed, diffusion barrier and cap layers. Multi-buffer layer deposition requires longer fabrication time. This is one of main reasons which increases fabrication cost Thus, single buffer layer deposition seems to be important for practical coated conductor process. In this study, a single layered buffer deposition of $CeO_2$ for low cost coated conductors has been tried using thermal evaporation technique 100nm-thick $CeO_2$ layers deposited by thermal evaporation were found to act as a diffusion layer. $0.4{\mu}m$-thick SmBCO superconducting layers were deposited by thermal co-evaporation on the $CeO_2$ buffered Ni-W substrate. Critical current of 118A/$cm^2$ was obtained for the SmBCO coated conductors.

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Planarization of flexible tape substrate by solution coating process

  • Kang, Boo-Min;Ko, Rock-Kil;Kim, Dong-Hyuk;Ha, Dong-Woo;Park, Seong-Soo
    • 한국초전도ㆍ저온공학회논문지
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    • 제13권4호
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    • pp.18-21
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    • 2011
  • In this work, the yttrium oxide($Y_2O_3$) thin films as the buffer layer were prepared by the simple solution coating and reel-to-reel process on an unpolished metal tape substrate. The $Y_2O_3$ thin films were successfully synthesized by the hydrolysis of yttrium acetate. We have studied the improvement of surface roughness with the concentration of solution(0.1 M, 0.4 M, M) and the number of coatings. The planarization by solution coating process is simple in comparison with the existing polishing process, and it is eco-friendly, and has the benefits of low cost process. The thickness of $Y_2O_3$ films was increased with the $Y_2O_3$ concentration in the solution, and the surface became smoother with the number of coating cycles. Using this process, we have achieved 1.2 nm RMS roughness from a starting roughness of over 31 nm on 25 ${\mu}m^2$ area.

최소 비용 직각선분 Steiner 거리 유지 트리의 최적화 (On Minimum-Cost Rectilinear Steiner Distance-Preserving Tree)

  • 조준동
    • 한국정보처리학회논문지
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    • 제3권7호
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    • pp.1707-1718
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    • 1996
  • N개의 signal net와 소스 노드 s, 싱크 노드가 있을 때, 최소 비용 직각선분 거리 유지 트리의 s와 싱크 간의 노선 길이는 s와 싱크 간의 직각선분의 길이와 일치한다. 최소 비용 직각선분 Steiner 거리유지 트리는 최단 s와 싱크 간의 직각선분 길이를 유지하면서 전체 트리 비용이 최소가 되도록 하는 것이다. 최소 비용 직각선분 Steiner 거리 유지 트리를 찾는 휴리스틱 알고리즘이 최근에 발표된 바 있는데, 본 논문에서는 O(n2 log m)2) 계산시간 내에 비용을 최소화하는 알고리즘을 제안한다. 네트워크 흐름 이론과 최소 비용 흐름 알고리즘을 이용하여 최적화 해를 발견하였다. 더욱 일반화된 응용 연구가 제안 되었고 관련 미해결 문제를 제시하였다.

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A Study on Thermal Stability of Ga-doped ZnO Thin Films with a $TiO_2$ Barrier Layer

  • Park, On-Jeon;Song, Sang-Woo;Lee, Kyung-Ju;Roh, Ji-Hyung;Kim, Hwan-Sun;Moon, Byung-Moo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.434-436
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    • 2013
  • Ga-doped ZnO (GZO) was substitutes of the SnO2:F films on soda lime glass substrate in the photovoltaic devices such as CIGS, CdTe and DSSC due to good properties and low cost. However, it was reported that the electrical resistivity of GZO is unstable above $300^{\circ}C$ in air atmosphere. To improve thermal stability of GZO thin films at high temperature above $300^{\circ}C$ an $TiO_2$ thin film was deposited on the top of GZO thin films as a barrier layer by Pulsed Laser Deposition (PLD) method. $TiO_2$ thin films were deposited at various thicknesses from 25 nm to 100 nm. Subsequently, these films were annealed at temperature of $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$ in air atmosphere for 20 min. The XRD measurement results showed all the films had a preferentially oriented ( 0 0 2 ) peak, and the intensity of ( 0 0 2 ) peak nearly did not change both GZO (300 nm) single layer and $TiO_2$ (50 nm)/GZO (300 nm) double layer. The resistivity of GZO (300 nm) single layer increased from $7.6{\times}10^{-4}{\Omega}m$ (RT) to $7.7{\times}10^{-2}{\Omega}m$ ($500^{\circ}C$). However, in the case of the $TiO_2$ (50 nm)/GZO (300 nm) double layer, resistivity showed small change from $7.9{\times}10^{-4}{\Omega}m$ (RT) to $5.2{\times}10^{-3}{\Omega}m$ ($500^{\circ}C$). Meanwhile, the average transmittance of all the films exceeded 80% in the visible spectrum, which suggests that these films will be suitable for photovoltaic devices.

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Detection of Food-Grade Hydrogen Peroxide by HRP-Biocomposite Modified Biosensors

  • Chang, Seung-Cheol
    • 한국식품위생안전성학회지
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    • 제32권6호
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    • pp.447-454
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    • 2017
  • 본 연구의 목적은 식품 제조 중 표백 및 살균에 사용되는 과산화수소($H_2O_2$)의 잔류 농도 검출에 활용 될 수 있는 유리탄소전극 기반의 바이오센서의 개발이다. 미국 FDA 및 국내 식품의학안전처 등 식품 용 과산화수소(food grade $H_2O_2$)는 국내외적으로 35% $H_2O_2$ 수용액으로 규정한다. 연구에서 개발한 바이오센서는 감응 물질로 사용된 horseradish peroxidase를 graphene oxide와 aniline과 함께 biocomposite를 형성시킨 후 중성 pH에서 본 연구에서 새롭게 개발된 전기화학적 증착법을 수행하여 개발되었다. 센서구조 및 특성 평가를 위하여 SEM, 순환 전압 전류법 등을 수행하였으며 본 연구에서 개발된 바이오센서는 $10-500{\mu}M$ 농도의 $H_2O_2$에 대하여 직선상의 농도 의존적인 반응을 나타내었으며 최저 검출 한계는 $0.12{\mu}M$으로 산출되었다. 본 연구에서 개발된 센서의 전략적 가치는 향후 오징어포, 건어물 등 널리 유통되는 식품 중에 함유된 식품용 $H_2O_2$ 미량을 현장에서 쉽게 분석 할 수 있어서 비용-효과적 측면에서 그 가치가 우수하다는 것을 제시한다.

기계적 합금법을 이용한 리튬 2차 전지용 층상 양극물질 $Li[Ni_xCo_{1-2x}Mn_x]O_2$ 의 합성 및 전기화학적 특성에 관한 연구 (Synthesis and electrochemical properties of layered $Li[Ni_xCo_{1-2x}Mn_x]O_2$ materials for lithium secondary batteries prepared by mechanical alloying)

  • 박상호;신선식;선양국
    • 한국결정학회:학술대회논문집
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    • 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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    • pp.16-16
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    • 2002
  • The presently commercialized lithium-ion batteries use layer structured LiCoO₂ cathodes. Because of the high cost and toxicity of cobalt, an intensive search for new cathode materials has been underway in recent years. Recently, a concept of a one-to-one solid state mixture of LiNO₂ and LiMnO₂, i.e., Li[Ni/sub 0.5/Mn/sub 0.5/]O₂, was adopted by Ohzuku and Makimura to overcome the disadvantage of LiNiO₂ and LiMnO₂. Li[Ni/sub 0.5/Mn/sub 0.5/]O₂ has the -NaFeO₂ structure, which is characteristic of the layered LiCoO₂ and LiNiO₂ structures and shows excellent cycleability with no indication of spinel formation during electrochemical cycling. Layered Li[Ni/sub x/Co/sub 1-2x/Mn/sub x/]O₂ (x = 0.5 and 0.475) materials with high homogeneity and crystallinity were synthesized using a mechanical alloying method. The Li[Ni/sub 0.475/Co/sub 0.05/Mn/sub 0.475/]O₂ electrode delivers a high discharge capacity of 187 mAh/g between 2.8 and 4.6 V at a high current density of 0.3 mA/㎠(30 mA/g) with excellent cycleability. The charge/discharge and differential capacity vs. voltage studies of the Li[Ni/sub x/Co/sub 1-2x/Mn/sub x/]O₂ (x = 0.5 and 0.475) materials showed only one redox peak up to 50 cycles, which indicates that structural phase transitions are not occurred during electrochemical cycling. The magnitude of the diffusion coefficients of lithium ions for Li[Ni/sub x/Co/sub 1-2x/Mn/sub x/]O₂(x = 0.5 and 0.475) are around 10/sup -9/ ㎠/s measured by the galvanostatic intermittent titration technique (GITT).

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