• 한국진공학회지
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• 제15권2호
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• pp.168-172
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• 2006

수소화물기상증착법을 이용하여 질화갈륨 핵화층을 성장시켰고, 성장 온도에 따라 상이한 구조적 특성을 갖는 핵화층이 질화갈륨 나노막대의 형성에 어떤 영향을 주는지 방사광 x-선 산란과 원자힘 현미경을 이용하여 연구하였다. 서로 다른 온도에서 성장시킨 질화갈륨 핵화층들의 (002) 브래그 봉우리에 대한 록킹 곡선(rocking curve)을 측정한 결과, 반폭치가 작은 주 봉우리와 반폭치가 넓은 작은 봉우리의 합으로 표현됨을 관측하였다. 이러한 현상은 핵화층의 표면 형상과 연관되어져서 설명될 수 있음을 정성적으로 보였고, AFM 결과와 비교해 볼 때 안정적인 나노막대 성장을 위해서는 핵화층이 저온에서 성장되어야 함을 확인하였다.

• 한국결정성장학회지
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• 제6권1호
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• pp.11-18
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• 1996

Czochralski법으로 성장된 대구경(8인치 이상) 규소 단결정속에 폰재하는 결정 결 함을 규명하였다. Ring형 산화 적충 결함(Oxidation Induced Stacking Faults, 일명 OISF)의 발생 형태를 조사하였다. Minority life time을 mappmg하여 본 결과, rmg형 OISF의 폰재는 재료의 전기적 성질에 영향을 미칠 가능성이 높은 것으로 확인되었다. OISF의 핵 생성에 미치는 냉각 속도의 영향을 조사한 결과 homogeneous적 핵 생성 및 성장 현상을 확인할 수 있었다. 또한 COP(Crystal Originated Particle)의 주원인인 FPD(Flow Pattern Defects)의 발생은 용 체의 응고 속도에 크게 화우됨을 발견하였다. 이들 결함의 상반된 발생 현상의 제어를 위하여 는 인상 속도는 느리게, 또한 $950^{\circ}C$ 근처에서의 냉각속도는 빠르게 하는 것이 바람직한 것으로 결함 발생 제어 모델이 제시되었다.

• 대기
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• 제21권1호
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• pp.35-44
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• 2011

We investigated characteristics of new particle formation and growth events observed at Gosan climate observatory using Scanning Mobility Particle Sizer (SMPS) measurements of particle number size distribution with 54 size ranges from 10 to 487 nm in October 2009. Four days (17~20 October) and five days (22~26 October) were classified into strong new particle formation and growth event ($N_S$) and weak particle formation and growth event ($N_W$), respectively. $N_S$ and $N_W$ divided by increase of aerosol number concentration in nucleation mode and continuity of growth from nucleation to Aitken mode. Particle growth rates of $N_S$ (5.34~$9.19nm\;h^{-1}$) were greater than that of $N_W$ (2.15~$3.53nm\;h^{-1}$). $N_S$ and $N_W$ were analyzed with synoptic pattern over East Asia, meteorological elements, and sulfur dioxide ($SO_2$) measured at Gosan. We found that $N_S$ was characterized by a fast and northwesterly wind accompanied cold and dry airmass, but $N_W$ was affected airmass originated from South China and come through the Korea Peninsula. The events ($N_S$ and $N_W$) occurred at conditions of high solar flux ($&gt;700W\;m^{-2}$) and low relative humidity (< 60%). The $SO_2$ concentration on $N_S$ and $N_W$ was higher than that on case of non observed new particle formation.

• 한국표면공학회지
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• 제50권5호
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• pp.352-359
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• 2017

The growth of nanocrystalline diamond films on a p-type poly silicon substrate was studied using microwave plasma chemical vapor deposition method. A 6 mm thick poly silicon plate was mirror polished and scratched in an ultrasonic bath containing slurries made of 30 cc ethanol and 1 gram of diamond powders having different sizes between 5 and 200 nm. Upon diamond deposition, the specimen scratched in a slurry with the smallest size of diamond powder exhibited the highest diamond particle density and, in turn, fastest diamond film growth rate. Diamond deposition was carried out applying different DC bias voltages (0, -50, -100, -150, -200 V) to the substrate. In the early stage of diamond deposition up to 2 h, the effect of voltage bias was not prominent probably because the diamond nucleation was retarded by ion bombardment onto the substrate. After 4 h of deposition, the film growth rate increased with the modest bias of -100 V and -150 V. With a bigger bias condition(-200 V), the growth rate decreased possibly due to the excessive ion bombardment on the substrate. The film grown under -150V bias exhibited the lowest contact angle and the highest surface roughness, which implied the most hydrophilic surface among the prepared samples. The film growth rate increased with the apparent activation energy of 21.04 kJ/mol as the deposition temperature increased in the range of $300{\sim}600^{\circ}C$.

• 한국표면공학회지
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• 제46권1호
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.73-73
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• 1999

A large area negative metal ion beam source is developed. Kinetic ion beam of the incident metal ions yields a whole nucleation and growth phenomena compared to the conventional thin film deposition processes. At the initial deposition step one can engineer the surface and interface by tuning the energy of the incident metal ion beams. Smoothness and shallow implantation can be tailored according to the desired application process. Surface chemistry and nucleation process is also controlled by the energy of the direct metal ion beams. Each individual metal ion beams with specific energy undergoes super-thermodynamic reactions and nucleation. degree of formation of tetrahedral Sp3 carbon films and beta-carbon nitride directly depends on the energy of the ion beams. Grain size and formation of polycrystalline Si, at temperatures lower than 500deg. C is obtained and controlled by the energy of the incident Si-ion beams. The large area metal ion source combines the advantages of those magnetron sputter and SKIONs prior cesium activated metal ion source. The ion beam source produces uniform amorphous diamond films over 6 diameter. The films are now investigated for applications such as field emission display emitter materials, protective coatings for computer hard disk and head, and other protective optical coatings. The performance of the ion beam source and recent applications will be presented.

• 한국균학회지
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• 제50권4호
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• pp.255-262
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• 2022

In this study, the fungal strain KNUF-21-F39 was isolated from a declined apple tree (Malus domestica) in the Chungcheongbuk province in Korea. The strain KNUF-21-F39 presented a slow growth rate and a variety of macroconidia shapes and sizes ranging from ovoid to fusoid and 1- to 5-septate, primarily showing 3- and 4-septate, with "S" -shaped macroconidia rarely observed. The strain was identified based on morphological characteristics along with phylogenetic analysis performed using the internal transcribed spacer region (ITS) and partial sequences of translation elongation factor 1-α (tef1), RNA polymerase largest subunit (rpb1), and calmodulin (cal) genes. The fungal strain KNUF-21-F39 was identified as Fusarium diversisporum, which has not been previously reported in Korea. The ice nucleation activity (INA) of the strain was also evaluated, identifying the strain as positive for INA. This is the first report characterizing F. diversisporum as an IN-active fungal species.

• 한국세라믹학회지
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• 제47권4호
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• pp.333-337
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• 2010

Domain structure and polarization switching in (001)-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$ (PMN-x%PT) crystals for x=20 and 35at% have been investigated in-situ by scanning force microscope (SFM) in a piezoresponse mode under a step DC electrical voltage. In the initial annealed condition, polar nano domains (PND) and domain striations oriented along {110} were observed in x=20 and x=35, respectively. For x=20, domain switching occurs by heterogeneous nucleation, where nucleation is not confined in the vicinity of domain boundaries, but rather can occur throughout the crystal volume. However, for x=35, domain switching tends to be preferentially initiated near pre-existing twin boundaries. With increasing the applying voltage, the nuclei density increased and assembled into {110} striations, indicating a stress-accommodated domain growth process. At higher voltage, nucleation occurs heterogeneously throughout the crystal volume.

• Journal of Microbiology and Biotechnology
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• 제22권2호
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• pp.234-238
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• 2012

Recombinant Escherichia coli displaying organophosphorus hydrolase (OPH) was used to overcome the diffusion barrier limitation of organophosphorus pesticides. A new anchor system derived from the N-terminal domain of ice-nucleation protein from Pseudomonas syringae InaV (InaV-N) was used to display OPH onto the surface. The designed sequence was cloned in the vector pET-28a(+) and then was expressed in E. coli. Tracing of the expression location of the recombinant protein using SDS-PAGE showed the presentation of OPH by InaV-N on the outer membrane, and the ability of recombinant E. coli to utilize diazinon as the sole source of energy, without growth inhibition, indicated its significant activity. The location of OPH was detected by comparing the activity of the outer membrane fraction with the inner membrane and cytoplasm fractions. Studies revealed that recombinant E. coli can degrade 50% of 2 mM chlorpyrifos in 2 min. It can be concluded that InaV-N can be used efficiently to display foreign functional protein, and these results highlight the high potential of an engineered bacterium to be used in bioremediation of pesticide-contaminated sources in the environment.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.343-350
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• 2003

Using Bi$_2$Sr$_2$Ca$_2$.$_2$Cu$_3$ $O_{x}$ powders prepared by solid state reaction and spray drying method, the nucleation and growth behaviors of superconducting and second phases were investigated during isothermal heat treatment. When the spray drying power was used in contrast with solid state reaction powder, Bi$_2$Sr$_2$Ca$_2$.$_2$Cu$_3$ $O_{x}$ (2223) phase could be formed at the relatively shot time and second phases were much bigger. Quantitative analysis showed that as the heat treatment time increased, more Bi$_2$Sr$_2$Ca$_2$.$_2$Cu$_3$ $O_{x}$ (2212) changed to 2223 and the major second phase was changed from (Sr,Ca)$_{14}$Cu$_{24}$ $O_{x}$(14:24) to (Sr,Ca)$_2$Cu$_1$ $O_{x}$ (2:l). The superconducting phase formed at the relatively short time 14:24 phase. Following the Bi-free phase of 14:24 Phase, but long time was needed in places far from the 14:24 phase. Following the formation of the 2212 phase near the 14:24 phase, the 2223 phase nucleated preferentially at the interface between the 2212 and 14:24 phases. The preferential nuclcation of 2223 was explained by its structural similarity and low Interfacial energy with both the Bi-free and 2212 Phases.12 Phases.