• 제목/요약/키워드: Notching

검색결과 73건 처리시간 0.019초

Evaluating Scapular Notching after Reverse Total Shoulder Arthroplasty

  • Kim, Young-Kyu;Won, Jun-Sung;Park, Chang-Kyu;Kim, Jong-Geun
    • Clinics in Shoulder and Elbow
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    • 제18권4호
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    • pp.248-253
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    • 2015
  • Background: Scapular notching can happen at diverse location depending on implant design or operative technique, therefore, it is easily misdiagnosed. Thus, this study purposed to suggest a method helpful to assess scapular notching. Methods: The subjects were 73 cases of reverse shoulder arthroplasty (RSA) for cuff tear arthropathy during the period from May 2009 to April 2014 and followed-up for over a year. There was medialized RSA in 22 cases, bone increased offset RSA (BIO-RSA) in 36 cases, and metal increased offset RSA (metal-RSA) in 15 cases. Scapular notching was not determined by bone defect at the inferior of glenosphere as Sirveaux's classification, but scapular notching at the site where the rotational route of the polyethylene of humeral implant met the scapular neck were examined. The results were compared with conventional method. Results: By conventional method, scapular notching was observed in 10 cases (45.5%) in medialized RSA, 12 cases (33.3%) in BIO-RSA, and none in metal-RSA. By new method, it was observed in 9 cases (40.9%) in medialized RSA, 10 cases (27.8%) in BIO-RSA, and none of metal-RSA. The site of scapular notching was apart from glenoshpere in 18 cases, and at inferior of glenosphere in 1 case. Absorption of bone graft was observed in 4 (11.1%) out of 36 cases of BIO-RSA. Conclusions: It is hard to distinguish scapular notching from absorption of bone graft in BIO-RSA, and bone absorption at the lateral lower end of glenoid in medialized RSA. Thus, it is considered useful to assess scapular notching at the site where the rotational route of the polyethylene insert meets scapular neck.

플라즈마 식각공정에서 발생하는 실리콘 게이트 전극의 Notching 현상 (Notching Phenomena of Silicon Gate Electrode in Plasma Etching Process)

  • 이원규
    • 공업화학
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    • 제20권1호
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    • pp.99-103
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    • 2009
  • 반도체 소자의 실리콘 게이트 전극 식각공정은 산화막에 대한 높은 식각 선택비와 정확한 식각형상 제어 등의 공정요구 조건을 충족시키기 위해 고밀도 플라즈마 식각공정을 사용하나 식각 후 notching이 발생되는 문제점을 보이고 있다. 특이하게 도핑 되지 않은 비정질 실리콘을 게이트 전극 물질로 사용한 경우 발생된 notching의 위치가 가장 외곽에 위치한 게이트 전극선의 바깥쪽에서 주로 발생되는 것이 관찰 되었다. 본 연구에서는 $Cl_2/HBr/O_2$의 식각기체 구성으로 notching 발생이 식각변수들에 따라 받는 경향성을 파악하고, 식각장치 내에서 실리콘 기판에 도달하는 식각 이온들의 진행경로를 분석하였다. 주 원인은 플라즈마 내의 식각 활성종 이온들이 대전효과에 의하여 궤적의 왜곡이 일어나 notching 현상이 발생되는 것으로 파악되었다. 이 결과를 바탕으로 도핑 되지 않은 비정질 실리콘 게이트 식각에서 발생하는 notching의 형성기구를 정성적으로 설명하였다.

Development of an Efficient Notching Toolkit for Response Limiting Method

  • Shin, Jo Mun
    • 항공우주시스템공학회지
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    • 제15권4호
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    • pp.40-46
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    • 2021
  • At launch, satellites are exposed to various types of structural loads, such as quasi-static loads, sinusoidal vibrations, acoustic/random vibrations, and shocks. The launch environment test is aimed at verifying the structural stability of the test object against the launch environment. Various types of launch environments are simulated by simple vibration, acoustic, and shock tests considering possible test conditions in ground. However, the difference between the launch environment and the test environment is one of the causes of excessive testing. To prevent overtesting, a notching technique that adjusts the frequency range and the input load considering the design load is applied. For notching, specific procedures are established considering the satellite development concept, selected launch vehicle, higher system requirements, and test target level. In this study, the notching method, established procedure, and development of a notching toolkit for efficient testing are described.

Mid-term outcomes of bony increased offset-reverse total shoulder arthroplasty in the Asian population

  • Tankshali, Kirtan;Suh, Dong-Whan;Ji, Jong-Hun;Kim, Chang-Yeon
    • Clinics in Shoulder and Elbow
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    • 제24권3호
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    • pp.125-134
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    • 2021
  • Background: To evaluate clinical and radiological outcomes of bony increased offset-reverse total shoulder arthroplasty (BIO-RSA) in the Asian population at mid-term follow-up. Methods: From June 2012 to August 2017 at a single center, 43 patients underwent BIO-RSA, and 38 patients with minimum 2 years follow-up were enrolled. We evaluated the clinical and radiological outcomes, and complications at the last follow-up. In addition, we divided these patients into notching and no-notching groups and compared the demographics, preoperative, and postoperative characteristics of patients. Results: Visual analogue scale, American Shoulder and Elbow Surgeons, University of California-Los Angeles Shoulder Scale, and Simple Shoulder Test scores improved significantly from preoperative (5.00, 3.93, 1.72, 3.94) to postoperative (1.72, 78.91, 28.34, 7.66) (p<0.05) outcomes. All range of motion except internal rotation improved significantly at the final follow-up (p<0.05), and the bone graft was well-incorporated with the native glenoid in all patients (100%). However, scapular notching was observed in 20 of 38 patients (53%). In the comparison between notching and no-notching groups (18 vs. 20 patients), there were no significant differences in demographics, radiological parameters, and clinical outcomes except acromion-greater tuberosity (AT) distance (p=0.003). Intraoperative complications included three metaphyseal fractures and one inferior screw malposition. Postoperative complications included ectopic ossification, scapular neck stress fracture, humeral stem relaxation, and late infection in one case each. Conclusions: BIO-RSA showed improved clinical outcomes at mid-term follow-up in Asian population. However, we observed higher scapular notching compared to the previous studies. In addition, adequate glenoid lateralization with appropriate humeral lengthening (AT distance) might reduce scapular notching.

도핑되지 않은 비정질 실리콘의 고밀도 $Cl_2$/HBr/$O_2$플라즈마에 의한 식각 시 나칭효과 (Notching Effect during the Etching of Undoped Amorphous Silicon using High Density $Cl_2$/HBr/$O_2$Plasma)

  • 유석빈;김남훈;김창일;장의구
    • 한국전기전자재료학회논문지
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    • 제13권8호
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    • pp.651-657
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    • 2000
  • The notching effect in etching of undoped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma. First in the region of small line width the potential increased as a result of ions in the exposed surface of oxide and the incident ions between the small line widths were deflected more wide range therefore the depth of notching was shallow and wide. Second in the region of large line width of gate electrons were charged on the top of photoresist and the side of gate a part of ions deflected. The deflected ions were partly charged positive on the side of gate and then these partly charged ions produced potential difference. Therefore ions stored up more at independent line than at dense line and notching became deeper by Br ion bombardments.

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Treatment of instability with scapular notching and glenoid component loosing by partial mixed different implant revision

  • Chung, Young Woo;Shin, Woo Jin;An, Ki-Yong
    • Clinics in Shoulder and Elbow
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    • 제23권4호
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    • pp.190-193
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    • 2020
  • In general, reverse shoulder arthroplasty revision is performed using the same implant for both the humerus and glenoid components. However, the authors of the present case used different implants from what was used previously for treating instability with scapular notching and glenoid aseptic loosening and report the case.

고밀도 $Cl_2/HBr$ 플라즈마에 의한 비도핑 $\alpha$-Si 식각시 나칭 현상 (Notching Effect in Etching of the Undoped $\alpha$-Si by using High Density $Cl_2/HBr$ Plasma)

  • 신성욱;김남훈;유석빈;김창일;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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    • pp.10-13
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    • 2000
  • The notching effect in etching of un doped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma, First, in the region of small line width, the potential was increased as a result of ions in the exposed surface of oxide, and the incident ions between the small line width were deflected more wide range, therefore the depth of notching was shallow and wide, Second, in the region of large line width of gate, electrons were charged on the top of photoresist and the side of gate, a part of ions deflected, The deflected ions were locally charged positive on the side of gate, and then the potential difference was produced, therefore, ions stored up more at independent line than at dense line, and nothing became deeper by Br ion bombardment.

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