• Tribology and Lubricants
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• v.30 no.5
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• pp.247-255
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• 2014

Charged polymer chains, i.e., polyelectrolytes, are known to show superior aqueous lubricating properties compared to those of neutral polymer chains, especially in brush conformation. This is primarily because of the incorporation of a large amount of counterions within the polymer layers and the consequently increased osmotic pressure. However, this effect is active only when the polymer chains remain immobilized even under tribostress, which is not realistic for high-contact pressure tribological applications, especially when they are irreversibly immobilized on tribopair surfaces. In contrast, with free polymers, which can be included as surface-active additives in the base lubricant (water), long-term lubricating performance based on "self-healing" properties is readily expected. In order to assess whether the superior aqueous lubricating properties of polyelectrolyte chains are valid for free polymers too, this study reviews recent studies on the tribological properties of many charged biopolymer and synthetic copolymers at a nonpolar, hydrophobic interface. In contrast to the irreversibly immobilized polyelectrolyte chains, free polyelectrolyte chains show inferior aqueous lubricating properties compared to their neutral counterparts owing to charge accumulation and the consequently impeded surface adsorption on the nonpolar surface. Nevertheless, bovine submaxillary mucin (BSM), a representative biopolymer, shows a sufficiently effective surface adsorption and aqueous lubricating capabilities even at neutral pH without losing the polyanionic characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.229-229
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• 2010

We report a high crystalline nonpolar a-plane (11-20) GaN on r-plane (1-102) sapphire substrates with $+0.15^{\circ}$, $-0.15^{\circ}$, $+0.2^{\circ}$, $-0.2^{\circ}$ and $+0.4^{\circ}$ misoriented by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 5 periods the nonpolar a-plane InGaN/GaN (a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN layers with double crystal x-ray diffraction. The FWHM values of $+0.4^{\circ}$ misoriented sapphire substrate were decreased down to 426 arc sec for $0^{\circ}$ and 531 arc sec for $-90^{\circ}$, respectively. Also, the samples were characterized by photoluminescence (PL).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.172-172
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• 2010

In the area of optoelectronic devices based on GaN and related ternary compounds, the two-dimensional system like as quantum wells (QWs) has been investigated as an effective structure for improving the light-emitting efficiency. Generally, the quantum well active regions in III-nitride light-emitting diodes grown on conventional c-plane sapphire substrates have critical problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. However, the QWs grown on nonpolar templates are free from the QCSE since the polar-axis lies within the growth plane of the template. Also the unique characteristic of linear polarized light emission from nonpolar QW structures is attracting attentions because it is proper to the application of back-light units of liquid crystal display. In this study, we characterized optical properties of the a-plane InGaN/GaN QW structures by temperature-dependent photoluminescence (TDPL) measurements. From the photoluminescence (PL) spectrum measured at 300 K, green emission centered at 520 nm was observed for the QW region. Since indium incorporation on nonpolar QWs is lower than that on c-plane, this high indium-doping on a-plane InGaN QWs is not common. Therefore, the effect of high indium composition on optical properties in a-plane InGaN QWs will be extensively studied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Proceedings of the Korean Society of Potoscience Conference
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• spring
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• pp.79-80
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• 1999

• Bulletin of the Korean Chemical Society
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• v.24 no.10
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• pp.1515-1516
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• 2003

• Journal of the Korean Society of Tobacco Science
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• v.4 no.2
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• pp.67-73
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• 1982

Essential oil components from tobacco powder were investigated as flavouring agent. The essential oil was isolated from tobacco powder by a simple distillation /extraction method The extracted essential oil was fractionated into basic, acidic and neutral groups. And the neutral group of essential oil was separated by column chromatography into 10 fractions. Above groups and fractions were tested for tobacco aroma and smoke aroma. The neutral group except most nonpolar fraction displays good flavouring properties which make them highly suitable for improving the flavour and aroma of tobacco and tobacco smoke. The most nonpolar fraction from neutral group was carefully investigated using preparative column, thin layer and gas chromatography ailed by GC/MS coupling. The major subfraction was identified as hydrocarbons on the basis of the IR spectrum. The 58 hydrocarbon components were identified by their mass spectra and was chromatographic retention times.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1525_1526
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• 2009

In this paper, we have studied the bulging phenomenon of ink-jet printed silver lines. The used silver inks are DGP-40LT-15C and DGH-55HTG of Advanced Nano Product (ANP) Company. We investigated the behavior of bulging by changing the polarity of the inks, the surface energy of substrate and droplet spacing in printing. The contact angle of the polar inks increased much more sensitively than the nonpolar ink as the surface energy of the substrate increases. In the case of the nonpolar ink, the bulging phenomenon occurred seriously as the droplet spacing decreased at the constant surface energy.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.285-289
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• 2015

We prepared silver Schottky contacts to O-polar and nonpolar m-plane bulk ZnO wafers. Then, by considering various transport models, we performed a comparative analysis of the current transport properties of Ag/bulk ZnO Schottky diodes, which were measured at 300, 200, and 100 K. The fitting of the forward bias current-voltage (I-V) characteristics revealed that the tunneling current is dominant as the transport component in both the samples. Compared to thermionic emission (TE), a stronger contribution of tunneling current was observed at low temperature. The reverse bias I-V characteristics were well fitted with the thermionic field emission (TFE) in both the samples. The presence of acceptor-like adsorbates, such as O₂ and H₂O, modulated the surface conductive state of ZnO, thereby affecting the tunneling effect. The degree of activation/passivation of acceptor-like adsorbates might be different in both the samples owing to their different surface morphologies and surface defects (e.g., oxygen vacancies).

• Journal of Photoscience
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• v.6 no.2
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• pp.67-70
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• 1999

trans-1-(9-Anthryl)-2-(n-pyridyl)ethene (t-n-APyE, n=2 or 4) and trans-1-(9-anthryl)-2-pyrazinylethene (T-APzE) exhibits solvent-dependent fluorescence and efficient trans)cis photoisomerization. Photochemical reactivities of t-2-APyE, t-4-APyE, and t-APzE have been investigated in nonpolar and polar solvents. In nonpolar solvent, parallel photocyclization reaction occurs very efficiently in competition with the fluorescence and photoisomerization. But, in polar solvent, photocyclization was not observed. It is probably due to the stabilization of charge separated state in polar solvent, which is an intermediate in photoisomerization reaction.