• Journal of KIISE:Computer Systems and Theory
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• v.37 no.1
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• pp.19-26
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• 2010

In this paper, we adopt Storage Class Memory, which is next-generation non-volatile RAM technology, as part of main memory parallel to DRAM, and exploit the SCM+DRAM main memory system from the dependability perspective. Our system provides instant system on/off without bootstrapping, dynamic selection of process persistence or non-persistence, and fast recovery from power and/or software failure. The advantages of our system are that it does not cause the problems of checkpointing, i.e., heavy overhead and recovery delay. Furthermore, as the system enables full application transparency, our system is easily applicable to real-world environments. As proof of the concept, we implemented a system based on a commodity Linux kernel 2.6.21 operating system. We verify that the persistence enabled processes continue to execute instantly at system off-on without any state and/or data loss. Therefore, we conclude that our system can improve availability and reliability.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.237.2-237.2
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• 2013

ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.4
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• pp.274-282
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• 2016

This paper proposes code optimization techniques to reduce energy consumption of complex multimedia applications in a hybrid memory system with volatile dynamic random access memory (DRAM) and non-volatile spin-transfer torque magnetoresistive RAM (STT-MRAM). The proposed approach analyzes read/write operations for variables in an application. Based on the profile, variables with a high read operation are allocated to STT-MRAM, and variables with a high write operation are allocated to DRAM to reduce energy consumption. In this paper, to optimize code for real-life complicated applications, we develop a profiler, a code modifier, and compiler/link scripts. The proposed techniques are applied to a Fast Forward Motion Picture Experts Group (FFmpeg) application. The experiment reduces energy consumption by up to 22%.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.783-784
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• 2011

• Journal of KIISE
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• v.42 no.3
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• pp.379-389
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• 2015

With the advent of non-volatile memories such as Phase Change Memory (PCM or PRAM) and Magneto Resistive RAM (MRAM), active studies have been carried out on how to replace Dynamic Random-Access Memory (DRAM) with PRAM. In this paper, we study both endurance and performance issues of existing join algorithms that are based on PRAM-based computer systems and have been widely used until now: Block Nested Loop Join, Sort-Merge Join, Grace Hash Join, and Hybrid Hash Join. Our experimental results show that the existing join algorithms need to be redesigned to improve both the endurance and performance of PRAMs. To the best of our knowledge, this is the first research to scientifically study the results of the four join algorithms running on PRAM-based systems. In this work, our main contribution is the modeling and implementation of a PRAM-based simulator for a comparative study of the existing join algorithms.

• Journal of KIISE:Computing Practices and Letters
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• v.14 no.2
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• pp.241-245
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• 2008

Non-volatile RAM (NVRAM) has both characteristics of nonvolatility and byte addressability. In order to efficiently exploit this NVRAM in the file system layer, we proposed the MiNV (Metadata in NVram) file system in our previous research. MiNV file system maintains all the metadata in NVRAM while storing file data in NAND Flash memory. In this paper, we experimentally analyze the efficiency for the execution of garbage collection in the MiNV file system. Also, we quantify the file system performance gains obtained from efficient garbage collection. Experimental results show that garbage collection on the MiNV file system executes more efficiently that on YAFFS even though these file systems adopt exactly the same garbage collection policy. Specifically, the MiNV file system invokes the aggressive garbage collection mechanism less frequently than YAFFS. Additionally, the MiNV file system postpones the first execution of the aggressive garbage collection mechanism in our experiments. From the experiments, we verify that the efficiency of garbage collection leads to performance improvements of the MiNV file system.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Journal of KIISE
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• v.42 no.2
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• pp.183-189
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• 2015

Recently, computer systems have encountered difficulties in making further progress due to the technical limitations of DRAM based main memory technologies. This has motivated the development of next generation memory technologies that have high density and non-volatility. However, these new memory technologies also have their own intrinsic limitations, making it difficult for them to currently be used as main memory. In order to overcome these problems, we propose a hybrid main memory system, namely HyMN, which utilizes the merits of next generation memory technologies by combining two types of memory: Write-Affable RAM(WAM) and Read-Affable RAM(ReAM). In so doing, we analyze the appropriate WAM size for HyMN, at which we can avoid the performance degradation. Further, we show that the execution time performance of HyMN, which provides an additional benefit of durability against unexpected blackouts, is almost comparable to legacy DRAM systems under normal operations.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.396-396
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• 2013

The resistive random access memory (ReRAM) has several advantages to apply next generation non-volatile memory device, because of fast switching time, long retentions, and large memory windows. The high mobility of monolayered graphene showed several possibilities for scale down and electrical property enhancement of memory device. In this study, the monolayered graphene grown by chemical vapor deposition was transferred to $SiO_2$ (100 nm)/Si substrate and glass by using PMMA coating method. For formation of metal-oxide nanoparticles, we used a chemical reaction between metal films and polyamic acid layer. The 50-nm thick BPDA-PDA polyamic acid layer was coated on the graphene layer. Through soft baking at $125^{\circ}C$ or 30 min, solvent in polyimide layer was removed. Then, 5-nm-thick indium layer was deposited by using thermal evaporator at room temperature. And then, the second polyimide layer was coated on the indium thin film. After remove solvent and open bottom graphene layer, the samples were annealed at $400^{\circ}C$ or 1 hr by using furnace in $N_2$ ambient. The average diameter and density of nanoparticle were depending on annealing temperature and times. During annealing process, the metal and oxygen ions combined to create $In_2O_3$ nanoparticle in the polyimide layer. The electrical properties of $In_2O_3$ nanoparticle ReRAM such as current-voltage curve, operation speed and retention discussed for applictions of transparent and flexible hybrid ReRAM device.