• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.1
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• pp.85-90
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• 2006

This paper presents experimental results relating to the preliminary breakdown characteristics in $SF_6/CO_2$ gas mixtures under a highly non-uniform electric field. The impulse pre-breakdown developments are investigated by the measurements of corona current and light emission images. As a result, the preliminary breakdown development mechanisms for both the positive and negative polarities were fundamentally same. The first streamer corona was initiated at the tip of needle electrode, and the leaders developed with a stepwise propagation and bridged the test gap. The pause time of leader pulses in the positive polarity was significantly shorter than that in the negative polarity. Also, the time interval between the first streamer corona onset and breakdown in the negative polarity was much longer than that in the positive polarity. The discharge channel path in the positive polarity was zigzag, and the leader channel in the negative polarity was thicker and brighter than that in the positive polarity.

• Transactions on Electrical and Electronic Materials
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• v.13 no.5
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• pp.252-255
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• 2012

In order to characterize insulation properties of epoxy/micro-silica/nano-silicate composite (EMNC), long-term and short-term AC treeing tests were carried out undr non-uniform electric field generated between needle-plate electrodes. In a long-term test, a 10 kV (60 Hz) electrical field was applied to the specimen positioned between the electrodes with a distance of 2.7 mm in an insulating oil bath at $30^{\circ}C$, and a typical branch type electrical tree was observed in the neat epoxy resin and breakdown took place at 1,042 min after applying the 10 kVelectrical field. Meanwhile, the spherical tree with the tree length of $237{\mu}m$ was seen in EMNC-65-0.3 at 52,380 min (36.4 day) and then the test was stopped because the tree propagation rate was too low. In the short-term test, an electrial field was applied to a 3.5 mm-thick specimen at an increasing voltage rate of 0.5 kV/s until breakdown in insulating oil bath at $30^{\circ}C$ and $130^{\circ}C$, and the data was estimated by Weibull statistical analysis. The electrical insulation breakdown strength for neat epoxy resin was 1,763 kV/mm at $30^{\circ}C$, while that for EMNC-65-0.3 was 2,604 kV/mm, which was a modified value of 47%. As was expected, the breakdown strength decreased at higher test temperatures.

• Steel and Composite Structures
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• v.33 no.6
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• pp.891-906
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• 2019

This study considers the instability behavior of sandwich plates considering magnetorheological (MR) fluid core and piezoelectric reinforced facesheets. As facesheets at the top and bottom of structure have piezoelectric properties they are subjected to 3D electric field therefore they can be used as actuator and sensor, respectively and in order to control the vibration responses and loss factor of the structure a proportional-derivative (PD) controller is applied. Furthermore, Halpin-Tsai model is used to determine the material properties of facesheets which are reinforced by graphene platelets (GPLs). Moreover, because the core has magnetic property, it is exposed to magnetic field. In addition, Kelvin-Voigt theory is applied to calculate the structural damping of the piezoelectric layers. In order to consider environmental forces applied to structure, the visco-Pasternak model is assumed. In order to consider the mechanical behavior of structure, sinusoidal shear deformation theory (SSDT) is assumed and Hamilton's principle according to piezoelasticity theory is employed to calculate motion equations and these equations are solved based on differential cubature method (DCM) to obtain the vibration and modal loss factor of the structure subsequently. The effect of different factors such as GPLs distribution, dimensions of structure, electro-magnetic field, damping of structure, viscoelastic environment and boundary conditions of the structure on the vibration and loss factor of the system are considered. In order to indicate the accuracy of the obtained results, the results are validated with other published work. It is concluded from results that exposing magnetic field to the MR fluid core has positive effect on the behavior of the system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.713-717
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• 2004

In this study, the etched trench properties including cross-sectional profile, surface roughness, and crystalline defects were investigated depending on the various silicon etching and additive gases, For the case of HBr$He-O_2SiF_4$ trench etching gas mixtures, the excellent trench profile and minimum defects in the silicon trench were achieved. Due to the residual oxide film grown by the additive oxygen gas, which acts as a protective layer during trench etching, the undercut and defects generation in the trench were suppressed. To improve the electrical characteristics of trench gate, the hydrogen annealing process after trench etching was also adopted. Through the hydrogen annealing, the trench corners might be rounded by the silicon atomic migration at the trench corners having high potential. The rounded trench corner can afford to reduce the gate electric field and grow a uniform gate oxide. As a result, dielectric strength and TDDB characteristics of the hydrogen annealed trench gate oxide were remarkably increased compared to the non-hydrogen annealed one.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• Journal of Radiation Protection and Research
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• v.47 no.1
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• pp.1-7
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• 2022

Background: In Japan, new regulations that revise the dose limit for the lens of the eye (hereafter the lens), operational quantities, and measurement positions for the lens dose were enforced in April 2021. Based on the international safety standards, national guidelines, the results of the Radiation Safety Research Promotion Fund of the Nuclear Regulation Authority, and other studies, the Working Group of Radiation Protection Standardization Committee, the Japan Health Physics Society (JHPS) developed a guideline for radiation dose monitoring for the lens. Materials and Methods: The Working Group of the JHPS discussed the criteria of non-uniform exposure and the management criteria set not to exceed the dose limit for the lens. Results and Discussion: In July 2020, the JHPS guideline was published. The guideline consists of three parts: main text, explanations, and 26 examples. In the questions, the corresponding answers were prepared, and specific examples were provided to enable similar cases to be addressed. Conclusion: With the development of the guideline on radiation dose monitoring of the lens, radiation managers and workers will be able to smoothly comply with revised regulations and optimize radiation protection.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.146-147
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• 2011

Processing a large area substrate for liquid crystal display (LCD) or solar panel applications in a capacitively coupled plasma (CCP) reactor is becoming increasingly challenging because of the size of the substrate size is no longer negligible compared to the wavelength of the applied radio frequency (RF) power. The situation is even worse when the driving frequency is increased to the Very High Frequency (VHF) range. When the substrate size is still smaller than 1/8 of the wavelength, one can obtain reasonably uniform process results by utilizing with methods such as tailoring the precursor gas distribution by adjustingthrough shower head hole distribution or hole size modification, locally adjusting the distance between the substrate and the electrode, and shaping shower head holes to modulate the hollow cathode effect modifying theand plasma density distribution by shaping shower head holes to adjust the follow cathode effect. At higher frequencies, such as 40 MHz for Gen 8.5 (2.2 m${\times}$2.6 m substrate), these methods are not effective, because the substrate is large enough that first node of the standing wave appears within the substrate. In such a case, the plasma discharge cannot be sustained at the node and results in an extremely non-uniform process. At Applied Materials, we have studied several methods of modifying the standing wave pattern to adjusting improve process non-uniformity for a Gen 8.5 size CCP reactor operating in the VHF range. First, we used magnetic materials (ferrite) to modify wave propagation. We placed ferrite blocks along two opposing edges of the powered electrode. This changes the boundary condition for electro-magnetic waves, and as a result, the standing wave pattern is significantly stretched towards the ferrite lined edges. In conjunction with a phase modulation technique, we have seen improvement in process uniformity. Another method involves feeding 40 MHz from four feed points near the four corners of the electrode. The phase between each feed points are dynamically adjusted to modify the resulting interference pattern, which in turn modulate the plasma distribution in time and affect the process uniformity. We achieved process uniformity of <20% with this method. A third method involves using two frequencies. In this case 40 MHz is used in a supplementary manner to improve the performance of 13 MHz process. Even at 13 MHz, the RF electric field falls off around the corners and edges on a Gen 8.5 substrate. Although, the conventional methods mentioned above improve the uniformity, they have limitations, and they cannot compensate especially as the applied power is increased, which causes the wavelength becomes shorter. 40 MHz is used to overcome such limitations. 13 MHz is applied at the center, and 40 MHz at the four corners. By modulating the interference between the signals from the four feed points, we found that 40 MHz power is preferentially channeled towards the edges and corners. We will discuss an innovative method of controlling 40 MHz to achieve this effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.287-287
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• 2011

ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.12
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• pp.79-86
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• 2008

This paper presents the experimental results of impulse breakdown characteristics in $SF_6/N_2$ gas mixtures under a highly non-uniform electric field with a change in temperature. The test temperature ranges from -25[$^{\circ}C$] to 25[$^{\circ}C$]. The processes of impulse preliminary breakdown developments were analyzed by the measurements of current pulse and luminous signals. As a result, the temperature dependance of breakdown voltage for the negative polarity was much stronger than that for the positive polarity. When increasing the temperature, The leader stepping time for the negative polarity was shown to be longer than that for the positive polarity. The results presented in this paper can be used as a useful information in designing the gas insulation lines with prominent ability for lightning surge.

• The Journal of the Acoustical Society of Korea
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• v.40 no.6
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• pp.615-625
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• 2021

Prior to proposing appropriate standard for subway station platform, this study conducted field measurements to examine characteristics of room acoustics on platform of two subway stations. As a result of analyzing the longitudinal length of the platform, Sound Pressure Level (SPL) decreased (maximum difference : 14 dB), Reverberation Time (RT) tended to increase (maximum difference of 0.8 s ~ 1.5 s), and C50 and D50 were decreased (maximum difference: 5.9 dB ~ 9.1 dB and 31.8 % ~ 37.6 %, respectively) as measurement positions moved away from the sound source. The Interaural Cross-correlation Coefficient (IACC) did not show clear tendency, but it was lower than 0.3 in entire points. It is judged that the subway platform has non-uniform sound field characteristics due to various combinations of direct and reflective sound even though it is finished with a strong reflective material.This indicates that the room acoustic characteristics of the near and far sound field are clearly expressed depending on the source-receiver distances in the subway platform having a long flat shape with a low height compared to the length.Therefore, detailed architectural and electric acoustic design based on the characteristics of each location of speaker and sound receiver in the platform is required for an acoustic design with clear sound information at all positions of the platform.