• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.405-408
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• 2004

In this work, Analytical model for voltage and current characteristics of NPT(Non-PunchThrough) IGBT(Insulated Gate Bipolar Transistor) was represented. voltage and current characteristics models were based on prediction on power loss of NPT IGBT during transient condition. For Analytical current model, excess carrier concentration and accumulated charge in active base width was analyzed with time variance. Analytical models were simulated by varying lifetime of excess minority carrier.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.173-174
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• 2006

In this paper we proposed transient model for NPT(Non Punch-Through) IGBT(Insulated Gate Bipolar Transistor) with gate resistances. As gate resistance increases, turn-off time increases. But If gate resistance is small, overshoot voltage increase. To analyze the effect of gate resistance, the transient model is made and the experiments are conducted. We used gate resistances of values; 8[$\Omega$], 140[$\Omega$], 810[$\Omega$] for simulations and experiments. We compared theoretical and experimental results and obtained good agreements.

• Journal of Power Electronics
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• v.9 no.3
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• pp.464-471
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• 2009

This paper introduces a new Motion-$SPM^{TM}$ (Smart Power Modules) module in Single In-line Package (SIP), which is a fully optimized intelligent integrated IGBT inverter module for up to 1kW low power motor drive applications. This module offers a sophisticated, integrated solution and tremendous design flexibility. It also takes advantage of pliability for the arrangement of heat-sink due to two types of lead forms. It comes to be realized by employing non-punch-through (NPT) IGBT with a fast recovery diode and highly integrated building block, which features built-in HVICs and a gate driver that offers more simplicity and compactness leading to reduced costs and high reliability of the entire system. This module also provides technical advantages such as the optimized cost effective thermal performances through IMS (Insulated Metal Substrate), the high latch immunity. This paper provides an overall description of the Motion-$SPM^{TM}$ in SIP as well as actual application issues such as electrical characteristics, thermal performance, circuit configurations and power ratings.

• Transactions of Materials Processing
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• v.6 no.5
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• pp.446-455
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• 1997

A Combined extrusion operation consists of forward and backward extrusion forming and it is possible to make the process be simple by employing it. But the metal flow pattern induced by the operation is hard to analyze accurately because the flows are non-steady, which have at least two directions dependent upon each other. So engineers in the industrial factories had conducted the two extrusion operations separately. A new process was designed by the industrial expert for forming of an alu-minum preform using the combined extrusion operation. In this study, experiments and finite element analysis was carried out to determine the process parameters. Through the preliminary experiment, it was shown that warm forming condition was more desirable than cold or hot ones. And optimal shape of initial billet could be also determined. From the compatibility test, bonde-lube was chosen as the optimal lubricant and 20$0^{\circ}C$ as the material temperature by the inspection of micro-structure. The operation was simulated by the rigid-plastic finite element method to examine the metal flow. Disap-pearing of dead metal zone was observed as the punch fell down and desirable shape was obtained from the one operation. As a result of this study, 7 operations could be reduced and 225% of material saved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.253-260
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• 2012

IGBT (insulated gate bipolar transistor) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the on state voltage drop should be lowered and the switching time should be shorted. However, there is Trade-off between the breakdown voltage and the on state voltage drop. To achieving good electrical characteristics, field stop IGBT (FS IGBT) is proposed. In this paper, 1,200 V planar gate non punch-through IGBT (planar gate NPT IGBT), planar gate FS IGBT and trench gate FS IGBT is designed and optimized. The simulation results are compared with each three structures. In results, we optain optimal design parameters and confirm excellence of trench gate FS IGBT. Experimental result by using medici, shows 40% improvement of on state voltage drop.

• Journal of Korean Neurosurgical Society
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• v.47 no.1
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• pp.74-77
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• 2010

Rhino-orbital-cerebral (ROC) mucormycosis is an uncommon, acute and aggressive fungal infection. It remains a challenging problem to clinicians despite aggressive debridement surgery and antifungal therapy. The authors describe a case of ROC mucormycosis with pericranial abscess occurring in a female patient with uncontrolled diabetes mellitus. The infection initially developed in the right-sided nasal sinus and later progressed through the paranasal sinuses with the invasion of the peri-orbital and frontotemporal region, due to the delayed diagnosis and treatment. Numerous non-septate hyphae of the zygomycetes were identified by a punch biopsy from the nasal cavity and by an open biopsy of the involved dura. The patient was treated successfully with extensive debridement of her necrotic skull and surrounding tissues, drainage of her pericranial abscess and antifungal therapy, including intravenous amphotericin B for 61 days and oral posaconazole for the following 26 days. She returned to a normal life and has had no recurrence since the end of her treatment 15 months ago.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.280-283
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• 2004

This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed $200{\mu}m$ width and $2600{\mu}m$ length. The breakdown voltage between cathode and anode contact of this fabricated GCT device is 2,715V.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.22 no.1
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• pp.177-189
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• 1998

The contents of this paper include a non-destructive technique for evaluating the degradation of the boiler superheater tube in a fossil power plant through an electrochemical polarization test. Correlation between Ip of polarization parameter and SP-DBTT for the superheater tubes in long-term use was obtained. 1.0Cr-0.5Mo steel was degraded by softening, and the degree of degradation was dependent upon carbides with Cr and Mo elements. Since brittle fracture at low temperature and ductile fracture mode at high temperature were shown, similarity between standard Charpy and small punch tests could be found. In addition, SP-DBTT showing the degree of degradation was higher, as the time-in use of the materials got longer. Electrolyte including picric acid of 1.3 g in distilled water of 100ml at 25.deg. C temperature and sodium tridecylbenzene sulfonate with 1g could be applied to evaluate the degradation of 1.0Cr-0.5Mo steel by means of the electrochemical polarization test. Ip and Ipa values measured through the electrochemical test are the appropriate parameters for representing the degradation of the superheater tube(1.0Cr-0.5Mo steel) for the fossil power plant. It is poassible to evaluate the degradation of materials with different time histories electrochemically, by Ip value only, at field test.

• Korean Journal of Human Ecology
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• v.18 no.2
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• pp.491-500
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• 2009

This study was carried out to investigate the preference for traditional food of university students through the analysis of their daily meal types. Questionnaires were collected from a total of 197 students from December 2007 to February 2008 in Chungnam Province. The results are as follows; 148 of the respondents (73.0%) prefer Korean traditional meal as their favorite food. The significant differences are found in both gender groups and major groups (p<.05). 178 of the respondents (90.4%) answered that the traditional foods are excellent and good. However, the foods were significantly (p<.05) evaluated that major students consider them to be 'excellent' foods, while non-major students consider them to be 'good' foods. 136 of respondents (69.0%) answered that the traditional foods have beneficial influences on their health. In the survey on intake frequency of traditional meals, 137 of respondents (65.9%) have traditional foods more than twice a day. The ratio of traditional meal intake of male students is a significantly higher level (p<.05) than that of female students. Their preference for traditional rice cake, fermented rice punch, and juice mixed with fruits is a very high level of the average of 4.19, 4.22 and 4.34, respectively. The preference for Kimchi, Bulgoki, boiled beef slices, sundae and jelly was a relatively high level of the average of 4.43, 4.65, 4.14, 4.30, and 4.05, respectively. Concludingly, the research shows the majority of students enjoy korean traditional food and expect Korean food as favorite food to be developed and to be inherited.