• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.117-123
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• 2014

The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1440-1441
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• 2006

In this study, we synthesized CNTs(carbon nanotubes) on the glass substrate by microwave plasma enhanced chemical vapor deposition (MPECVD), Effect of bias voltage on the grown behavior and morphology of CNTs were investigated. Recently, it has been proposed that aligned CNTs can also be achieved by the application of electric bias to the substrate during growth, the first time reported the bias effect such that the nanotube alignment occurred only when a positive bias was applied to the substrate whereas no aligned growth occurred under a negative bias and no tube growth was observed without bias. On the country, several researchers reported some different observations that aligned nanotubes could also be grown under negative substrate biases. This discrepancy as for the effect of positive and negative bias may indicate that the bias effect is not fully understood yet. The glass and Si wafers were first deposited with TiN buffer layer by r.f sputtering method, and then Ni catalyst same method, The thickness of TiN and Ni layer were 200 nm and 60 nm, respectively. The main process parameters include the substrate bias (0 to - 300 V), and deposition pressure (8 to 20 torr).

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1748-1750
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• 2000

There are currently considerable interests in the applications of conjugated polymers, oligomers. and small molecules for thin-film electronic devices. Organic materials have potential advantages to be utilized as semiconductors in field-effect transistors and light-emitting diodes. In this study we fabricated the devices based on pentacene as active layer. Octadecyltrichlorosilane (OTS) is used as buffer layer between $SiO_2$ and pentacene. Atomic force microscopy (AFM), X-ray diffraction (XRD), and electrical conductivity were used with OTS on $SiO_2$ 10nm which the pentacene layer was thermally evaporated in vacuum at a pressure of about $2.0\times10^{-6}$ Torr. In the result of AFM, the grain length is grown by using OTS for surface treatment. Electrical conductivity is changed from $3.19{\times}10^{-6}$ S/cm to $2.12{\times}10^{-7}$ S/cm. We observed that electrical conductivity is also increased by surface treatment. According to these results, the surface treated devices exhibited the increase to compared no treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.3
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• pp.578-584
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• 2017

$SiO_2$ buffer layer (100 nm) has been deposited on PET substrate by electron beam evaporation. And then, IZTO (In-Zn-Sn-O) thin film has been deposited on $SiO_2$/PET substrate with different RF power of 30 to 60 W, working pressure, 1 to 7 mTorr, by RF magnetron sputtering. Structural, electrical and optical properties of IZTO thin film have been analyzed with various RF powers and working pressures. IZTO thin film deposited on the process condition of 50 W and 3 mTorr exhibited the best characteristics, where figure of merit was $4.53{\times}10^{-3}{\Omega}^{-1}$, resistivity, $4.42{\times}10^{-4}{\Omega}-cm$, sheet resistance, $27.63{\Omega}/sq.$, average transmittance (400-800 nm), 81.24%. As a result of AFM, all the IZTO thin film has no defects such as pinhole and crack, and RMS surface roughness was 1.147 nm. Due to these characteristics, IZTO thin film deposited on $SiO_2$/PET structure was found to be a very compatible material that can be applied to the next generation flexible display device.

• Journal of Environmental Science International
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• v.21 no.5
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• pp.585-596
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• 2012

This study is mainly focused on micellar effect of cetyltrimethyl ammonium bromide(CTABr) solution including alkylbenzimidazole(R-BI) on dephosphorylation of isopropyl-4-nitrophenylphosphinate(IPNPIN) in carbonate buffer(pH 10.7). The reactions of IPNPIN with R-$BI^{\ominus}$ are strongly catalyzed by the micelles of CTABr. Dephosphorylation of IPNPIN is accelerated by $BI^{\ominus}$ ion in $10^{-2}$ M carbonate buffer(pH 10.7) of $4{\times}10^{-3}$ M CTABr solution up to 89 times as compared with the reaction in carbonate buffer by no benzimidazole(BI) solution of $4{\times}10^{-3}$ M CTABr. The value of pseudo first order rate constant($k_{\Psi}$) of the reaction in CTABr solution reached a maximum rate constant increasing micelle concentration. Such rate maxima are typical of micellar catalyzed bimolecular reactions. The reaction mediated by R-$BI^{\ominus}$ in micellar solutions are obviously slower than those by $BI^{\ominus}$, and the reaction rate were decreased with increase of lengths of alkyl groups. It seems due to steric effect of alkyl groups of R-$BI^{\ominus}$ in Stern layer of micellar solution. The surfactant reagent, CTABr, strongly catalyzes the reaction of IPNPIN with R-BI and its anion(R-$BI^{\ominus}$) in carbonate buffer(pH 10.7). For example, $4{\times}10^{-3}$ M CTABr in $1{\times}10^{-4}$ M BI solution increase the rate constant($k_{\Psi}=98.5{\times}10^{-3}\;sec^{-1}$) of the dephosphorylation by a factor ca.25, when compared with reaction($k_{\Psi}=3.9{\times}10^{-4}\;sec^{-1}$) in $1{\times}10^{-4}$ M BI solution(without CTABr). And no CTABr solution, in $1{\times}10^{-4}$ M BI solution increase the rate constant($k_{\Psi}=3.9{\times}10^{-4}\;sec^{-1}$) of the dephosphorylation by a factor ca.39, when compared with reaction ($k_{\Psi}=1.0{\times}10^{-5}\;sec^{-1}$) in water solution(without BI). This predicts that the reactivities of R-$BI^{\ominus}$ in the micellar pseudophase are much smaller than that of $BI^{\ominus}$. Due to the hydrophobicity and steric effect of alkyl group substituents, these groups would penetrate into the core of the micelle for stabilization by van der Waals interaction with long alkyl groups of CTABr.

• Journal of Environmental Science International
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• v.19 no.5
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• pp.565-575
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• 2010

This study is mainly focused on micellar effect of cetylpyridinium chloride(CPyCl) solution including alkylbenzimidazole(R-BI) on dephosphorylation of diphenyl-4-nitrophenylphosphinate(DPNPIN) in carbonate buffer(pH 10.7). The reactions of DPNPIN with R-BI$^{\ominus}$ are strongly catalyzed by the micelles of CPyCl. Dephosphorylation of DPNPIN is accelerated by BI$^{\ominus}$ ion in $10^{-2}M$ carbonate buffer(pH 10.7) of $4{\times}10^{-3}M$ CPyCl solution up to 100 times as compared with the reaction in carbonate buffer by no BI solution of $4{\times}10^{-3}M$ CPyCl. The value of pseudo first order rate constant($k^m_{BI}$) of the reaction in CPyCl solution reached a maximum rate constant increasing micelle concentration. Such rate maxima are typical of micellar catalyzed bimolecular reactions. The reaction mediated by R-BI$^{\ominus}$ in micellar solutions are obviously slower than those by BI$^{\ominus}$, and the reaction rate were decreased with increase of lengths of alkyl groups. It seems due to steric effect of alkyl groups of R-BI$^{\ominus}$ in Stern layer of micellar solution. The surfactant reagent, cetylpyridinium chloride(CPyCl), strongly catalyzes the reaction of diphenyl-4-nitrophenylphosphinate(DPNPIN) with alkylbenzimidazole (R-BI) and its anion(R-BI$^{\ominus}$) in carbonate buffer(pH 10.7). For example, $4{\times}10^{-3}M$ CPyCl in $1{\times}10^{-4}M$ BI solution increase the rate constant ($k_{\Psi}=1.0{\times}10^{-2}sec^{-1}$) of the dephosphorylation by a factor ca.14, when compared with reaction ($k_{\Psi}=7.3{\times}10^{-4}sec^{-1}$) in $1{\times}10^{-4}M$ BI solution(without CPyCl). And no CPyCl solution, in $1{\times}10^{-4}M$ BI solution increase the rate constant ($k_{\Psi}=7.3{\times}10^{-4}sec^{-1}$) of the dephosphorylation by a factor ca.36, when compared with reaction ($k_{\Psi}=2.0{\times}10^{-5}sec^{-1}$) in water solution(without BI). This predicts that the reactivities of R-BI$^{\ominus}$ in the micellar pseudophase are much smaller than that of BI$^{\ominus}$. Due to the hydrophobicity and steric effect of alkyl group substituents, these groups would penetrate into the core of the micelle for stabilization by van der Waals interaction with long alkyl groups of CPyCl.

• Nuclear Engineering and Technology
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• v.54 no.11
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• pp.4062-4071
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• 2022

Long-term aluminum (Al) corrosion tests were designed to investigate the condition that would generate severe Al corrosion and precipitation. Buffer agents of sodium tetraborate (NaTB), trisodium phosphate (TSP) and sodium hydroxide (NaOH) were adopted. The insulation materials, fiberglass and calcium silicate (Ca-sil), were examined to explore their effects on Al corrosion. The results show that significant precipitates were formed in both NaTB/TSP-buffered solutions at high pH. The precipitates formed in NaTB solution raise more concerns on chemical effects in GSI-191. A passivation layer formed on the surfaces of coupon in solution with the presence of insulations could effectively mitigate Al corrosion. The Fe-enriched intermetallic particles (IPs) embedded in coupon appeared to serve as seeds to readily induce precipitation via providing extra area for heterogeneous Al hydroxide precipitation. X-ray spectroscopy (EDS) and X-ray diffraction (XRD) analyses indicate that the precipitates are mainly boehmite (γ-AlOOH) and no direct evidence confirms the presence of sodium aluminum silicate or calcium phosphate.

• Journal of Institute of Control, Robotics and Systems
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• v.2 no.3
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• pp.220-228
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• 1996

This paper presents a extended stochastic Petri net (ESPN) model for CTN(Circulated Token with No duration) service in the data link layer of IEC/ISA fieldbus. It is assumed that a station on the fieldbus has a specified minimum token holding time, a finite capacity buffer, and one transmitter queue with the highest priority. The mean transmission (or service) time at a station and the mean token rotation time for the symmetric fieldbus system atr derived using the presented SPN model and the moment generating function. These performance measures are represented in terms of the minimum token holding time, the number of stations, the arrival rate of messages, and the mean length of messages. The presented performance measure are validated by computer simulations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.329-330
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• 2005

Bi-Sr-Ca-Cu-O thin films have been fabricated by sputter deposition method. During the deposition, 10 and 90 wt%-ozone/oxygen mixture gas of typical pressure of $1\sim9\times10^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.