• ETRI Journal
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• v.35 no.1
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• pp.146-149
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• 2013

We propose a reconciliation sublayer (RS)-based lane and traffic control protocol for energy-efficient 40-G/100-G Ethernet. The RS performs active/inactive lane control and data rate adaptation depending on active lane information received from the upper layer. This protocol does not result in a processing delay in the media access control layer, nor is an additional buffer required at the physical layer for dynamic lane control. It ensures minimal delay and no overhead for the exchange of control frames and provides a simple adaptive data rate.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.5
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• pp.1397-1408
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• 1998

Service networks for the future communication networks will be combined by the B-ISDN networks. These service networks also will use SS No.7 as the signaling transport network for the control of user requriement service. Therefore, ITU-T recommended B-ISDN signaling layers for SS No.7 as a substitute for N-ISDN MTP signaling layer. In this paper, we propose the implementation structure and describe the characteristics and functions of each signaling layer of SS No.7, which are adapted to ATM switching system, and evaluate a performance. The structure of SSCOP transmission buffer using a linked list and an unit frame length is proposed for SAAL layer and the implementation structure and internal routing method according to the ATM switching system are also proposed for MTP-3b layer. Additionally, we propose the ISUP/B-ISUP level interworking structure using only associated mode, which are presented in the first stage of B-ISDN as the effective internatworking structure of SS No.7 for the circuit related signaling network between the existing N-ISDN networks and B-ISDN networks.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.2
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• pp.409-413
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• 2010

We fabricated 10 nm-thick cobalt silicide($CoSi_2$) as a buffer layer on a p-type Si(100) substrate to investigate the possibility of GaN epitaxial growth on $CoSi_2/Si(100)$ substrates. We deposited 500 nm-GaN on the cobalt silicide buffer layer at low temperature with a PA-MBE (plasma assisted-molecular beam epitaxy) after the $CoSi_2/Si$ substrates were cleaned by HF solution. An optical microscopy, AFM, TEM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. For the GaN samples without HF cleaning, they showed no GaN epitaxial growth. For the GaN samples with HF cleaning, they showed $4\;{\mu}m$-thick GaN epitaxial growth due to surface etching of the silicide layers. Through XRD $\omega$-scan of GaN <0002> direction, we confirmed the cyrstallinity of GaN epitaxy is $2.7^{\circ}$ which is comparable with that of sapphire substrate. Our result implied that $CoSi_2/Si(100)$ substrate would be a good buffer and substrate for GaN epitaxial growth.

• Journal of Environmental Science International
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• v.24 no.8
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• pp.981-992
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• 2015

This study is mainly focused on micellar effect of tetradecyltrimethyl ammonium bromide(TTABr) solution including alkylbenzimidazole(R-BI) on dephosphorylation of diphenyl-4-nitrophenylphosphinate(DPNPIN) in carbonate buffer(pH 10.7). Dephosphorylation of DPNPIN is accelerated by $BI^{\Theta}$ ion in $10^2$ M Carbonate buffer(pH 10.7) of $4{\times}10^{-4}$ M TTABr solution up to 80 times as compared with the reaction in Carbonate buffer by no benzimidazole(BI) solution of TTABr. The value of pseudo first order rate constant($k_{\psi}$) of the reaction in TTABr solution reached a maximum rate constant increasing micelle concentration. The reaction mediated by $R-BI^{\Theta}$ in micellar solutions are obviously slower than those by $BI^{\Theta}$, and the reaction rate were decreased with increase of lengths of alkyl groups. It seems due to steric effect of alkyl groups of $R-BI^{\Theta}$ in Stern layer of micellar solution. The surfactant reagent, TTABr, strongly catalyzes the reaction of DPNPIN with R-BI and its anion($R-BI^{\Theta}$) in Carbonate buffer(pH 10.7). For example, $4{\times}10^{-4}$ M TTABr in $1{\times}10^{-4}$ M BI solution increase the rate constant($k_{\psi}=99.7{\times}10^{-4}1/sec$) of the dephosphorylation by a factor ca. 28, when compared with reaction($k_{\psi}=3.5{\times}10^{-4}1/sec$) in BI solution(without TTABr). And no TTABr solution, in BI solution increase the rate constant($k_{\psi}=3.5{\times}10^{-4}1/sec$) of the dephosphorylation by a factor ca. 39, when compared with reaction ($k_{\psi}=1.0{\times}10^{-5}1/sec$) in water solution(without BI).

• 한국초전도학회:학술대회논문집
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• v.11
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• pp.55-55
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• 2001

• Korean Journal of Environment and Ecology
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• v.12 no.1
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• pp.78-90
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• 1998

An objective of this study was to provide database for the planting disign of buffer green space. Types, planting structure, and effect of vuffer green space were investigated in five housing complexes of newtown of metropolitan area, Korea. Buffer green space in the study sites were constructed as mounding, slope, and plate. The number of species was found 20 tree and sub-tree species(10 evergreen and 20 deciduous species ) and 13 shrub species. These species were planted in one-storyed planting structure and there was no difference with ornamental species in the urban parks. Effect of sound proof by the buffer green space was recognized but sound level in four types among the seven types was observed above standard sound level for housing complex(65dB). Effect of sound proof was especially most effective in the mounding type. It was found that planting density and index of plant crown volume were mot satisfied to the function of buffer green space because of lower density and crown volume than natural vegetation per unit. Based on these results, this study suggested that buffer green space is desirable to be developed in the mounding type over two meters height with multi-layer planting model. In addition, there is needed to consider vegetation structure of natural forest around the developing site.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1794-1798
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• 2018

We have grown famatinite $Cu_3SbS_4$ films by using sulfurization of Cu/Sb stack film. Sulfurization at $500^{\circ}C$ produced famatinite $Cu_3SbS_4$ phase, while $400^{\circ}C$ and $450^{\circ}C$ sulfurization exhibited unreacted and mixed phases. The fabricated $Cu_3SbS_4$ film showed S-deficiency, and secondary phase of $Cu_{12}Sb_4S_{13}$. The secondary phase was confirmed by X-ray diffraction, Raman spectroscopy, photoluminescence and external quantum efficiency measurements. We have also fabricated solar cell in substrate type structure, ITO/ZnO/(Zn,Sn)O/$Cu_3SbS_4$/Mo/glass, where $Cu_3SbS_4$ was used as a absorber layer and (Zn,Sn)O was employed as a Cd-free buffer. Our best cell showed power conversion efficiency of 0.198%. Characterization results of $Cu_3SbS_4$ absorber indicates deep defect (due to S-deficiency) and low shunt resistance (due to $Cu_{12}Sb_4S_{13}$ phase). Thus in order to improve the cell efficiency, it is required to grow high quality $Cu_3SbS_4$ film with no S-deficiency and no secondary phase.

• Journal of computational fluids engineering
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• v.4 no.2
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• pp.17-30
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• 1999

The unsteady transitional boundary layer due to rotor-stator interaction was studied at two operation points, the design and one off design points. The off design point leads to lower blade loading and lower Reynolds number. A Navier-Stokes code developed in the previous study was parallelized to expedite computations. A low Reynolds number turbulence model was used to close the momentum equations. All computations show good agreement with experimental data. The wake induced transitional strip on the suction side of the stator is clearly captured at design point operation. There is no noticeable change in shape and phase angle of the wake induced strip even in the laminar sublayer. The wake induced transitional strip at off design point shows more complex structure. The wake induced transitional strip is observed only in the turbulent layer, and becomes obscure in the laminar sublayer and buffer layer. This behavior is probably consequent upon that the transition is governed by both wake induced strip and natural transition mechanism by Tollmien-Schlichting wave.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.4
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• pp.159-164
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• 2009

We fabricated 40 nm-thick cobalt silicide ($CoSi_2$) as a buffer layer, on p-type Si(100) and Si(111) substrates to investigate the possibility of GaN epitaxial growth on $CoSi_2$/Si substrates. We deposited GaN using a HVPE (hydride vapor phase epitaxy) with two processes of process I ($850^{\circ}C$-12 minutes + $1080^{\circ}C$-30 minutes) and process II ($557^{\circ}C$-5 minutes + $900^{\circ}C$-5 minutes) on $CoSi_2$/Si substrates. An optical microscopy, FE-SEM, AFM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. In case of process I, it showed no GaN epitaxial growth. However, in process II, it showed that GaN epitaxial growth occurred. Especially, in process II, GaN layer showed selfaligned substrate separation from silicon substrate. Through XRD ${\omega}$-scan of GaN <0002> direction, we confirmed that the combination of cobalt silicide and Si(100) as a buffer and HVPE at low temperature (process II) was helpful for GaN epitaxy growth.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.13-16
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• 2002

Ru thin films were deposited on bi-axially textured Ni tape using rf-magnetron sputtering for a conductive buffer layer of high Tc superconductor applications. (002) textured Ni films were fabricated as the deposition temperature was over $600^{\circ}C$. Rocking curves of the films showed similar alignment to those the Ni tapes. The resistivity of the tapes fabricated below $600^{\circ}C$ was around 20$\mu\Omega$-cm which is good for the conductive layer for tape superconductor applications.