• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.86-86
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• 2003

Copper has attracted much attention in the deep submicron ULSI metallization process as a replacement for aluminum due to its lower resistivity and higher electromigration resistance. Electroless copper deposition method is appealing because it yields conformal, high quality copper at relatively low cost and a low processing temperature. In this work, it was investigated that effect of the microstructure of the substrate on the electroless deposition. The mechanism of the nucleation and growth of the palladium nuclei during palladium activation was proposed. Electroless copper deposition on TiN barriers using glyoxylic acid as a reducing agent was also investigated to replace toxic formaldehyde. Furthermore, electroless copper deposition on TaN$\sub$x/ barriers was examined at various nitrogen flow rate during TaN$\sub$x/ deposition. Finally, it was investigated that the effect of plasma treatment of as-deposited TaN$\sub$x/ harriers on the electroless copper deposition.

• Asian Journal of Atmospheric Environment
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• v.10 no.2
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• pp.57-66
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• 2016

Wet deposition fluxes of ions at a coastal site in southwestern Japan in the period 1996-2003 were investigated to quantify the respective contributions of cyclone-, stationary front- and typhoon-associated rains. On average, the deposition fluxes of terrigenous-origin ions, nss-$SO_4{^{2-}}$, $NO_3{^-}$, $NH_4{^+}$ and nss-$Ca^{2+}$ were $37.6{\pm}7.3$, $16.3{\pm}4.2$, $19.0{\pm}3.4$ and $9.6{\pm}4.8meq\;m^{-2}yr^{-1}$, and those of $Na^+$ and $Cl^-$, the major ions in sea water, were $97.0{\pm}38.2$ and $115.2{\pm}48.2meq\;m^{-2}yr^{-1}$, respectively. Cyclone-associated rain constituted more than 50% of the fluxes of the terrigenous ions in almost all years. Stationary front-associated rain also contributed significantly, although the contribution was lower than the contribution by Cyclone-associated rain in almost all years. In particular, the wet deposition flux of nitrogen compounds of $NO_3{^-}$ and $NH_4{^+}$, which are important nutrients for micro-bioactivities in sea surface water, was dominated by cyclone-associated rain. Due to the extreme abundance of $Na^+$ and $Cl^-$ in the rainwater of typhoons, the fluxes of $Na^+$ and $Cl^-$ were contributed substantially by typhoons in years with typhoons' passage although cyclones were still the largest contributor to the fluxes. These results indicate the dominance of cyclones in the wet deposition to the East China Sea areas and the necessity to take rain types into account for a more accurate elucidation of the temporal and spatial variation of the wet deposition.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.14-21
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• 2010

Ge is one of the attractive channel materials for the next generation high speed metal oxide semiconductor field effect transistors (MOSFETs) due to its higher carrier mobility than Si. But the absence of a chemically stable thermal oxide has been the main obstacle hindering the use of Ge channels in MOS devices. Especially, the fabrication of gate oxide on Ge with high quality interface is essential requirement. In this study, $HfO_xN_y$ thin films were prepared by plasma-enhanced atomic layer deposition on Ge substrate. The nitrogen was incorporated in situ during PE-ALD by using the mixture of nitrogen and oxygen plasma as a reactant. The effects of nitrogen to oxygen gas ratio were studied focusing on the improvements on the electrical and interface properties. When the nitrogen to oxygen gas flow ratio was 1, we obtained good quality with 10% EOT reduction. Additional analysis techniques including X-ray photoemission spectroscopy and high resolution transmission electron microscopy were used for chemical and microstructural analysis.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.4
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• pp.775-784
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• 2000

Nitrate dry deposition fluxes were directly measured using knife-leading-edge surrogate surface (KSS) covered with greased strips and a water surface sampler (WSS). The average gaseous flux ($8.3mg/m^2/day$) was much higher than the average particulate one ($3.0mg/m^2/day$). The best fit gas phase mass transfer coefficient (MTC) of $HNO_3$ was obtained by linear regression analysis between measured gaseous flux containing nitrogen compounds and measured ambient $HNO_3$ concentration. The result showed that the MTCs of $HNO_3$ were approximately two times higher than those of $SO_2$. Especially, during the ozone action day, measured gaseous fluxes containing nitrogen compounds were much higher than those ones calculated as the product of measured ambient $HNO_3$ concentration and gas phase MTC of $HNO_3$, which is calculated from MTC of $SO_2$ using Graham's diffusion law. This result indicated that other nitrogen compounds except $HNO_3$ contributed to gaseous flux containing nitrogen compounds into the water surface sampler. The theoretical calculations suggest the contributions of nitrous acid ($HNO_2$) and PAN to the gaseous dry deposition flux of nitrogen containing compounds to the WSS.

• Journal of the Korean Society for Heat Treatment
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• v.30 no.1
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• pp.1-5
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• 2017

A 100 nm thick $SnO_2$ thin films were prepared by radio frequency magnetron sputtering on glass substrates and then annealed in nitrogen atmosphere for 30 minutes at 100, 200, and $300^{\circ}C$, respectively. While the visible light transmittance and electrical resistivity of as deposited $SnO_2$ films were 81.8% and $1.5{\times}10^{-2}{\Omega}cm$, respectively, the films annealed at $200^{\circ}C$ show the increased optical transmittance of 82.8% and the electrical resistivity also decreased as low as $4.3{\times}10^{-3}{\Omega}cm$. From the observed results, it is concluded that post-deposition annealing in nitrogen atmosphere at $200^{\circ}C$ is an attractive condition to optimize the optical and electrical properties of $SnO_2$ thin films for the various display device applications.

• Transactions of Materials Processing
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• v.28 no.1
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• pp.43-48
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• 2019

Aluminum nitride (AlN) is used by the semiconductor industry, and is a compound that is required when manufacturing high thermal conductivity. The AlN films with c-axis orientation and thermal conductivity characteristic were deposited by using the Pulsed Laser Deposition (PLD). The AlN thin films were characterized by changing the deposition conditions. In particular, we have researched the AlN thin film deposited under optimal conditions for growth atmosphere. The epitaxial AlN films were grown on sapphire ($c-Al_2O_3$) single crystals by PLD with AlN target. The AlN films were deposited at a fixed temperature of $650^{\circ}C$, while conditions of nitrogen ($N_2$) pressure were varied between 0.1 mTorr and 10 mTorr. The quality of the AlN films was found to depend strongly on the $N_2$ partial pressure that was exerted during deposition. The X-ray diffraction studies revealed that the integrated intensity of the AlN (002) peak increases as a function the corresponding Full width at half maximum (FWHM) values decreases with lowering of the nitrogen partial pressure. We found that highly c-axis orientated AlN films can be deposited at a substrate temperature of $650^{\circ}C$ and a base pressure of $2{\times}10^{-7}Torr$ in the $N_2$ partial pressure of 0.1 mTorr. Also, it is noted that as the $N_2$ partial pressure decreased, the thermal conductivity increased.

• Proceedings of the Zoological Society Korea Conference
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• 1994.10a
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• pp.133.1-133
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• 1994

No Abstract, See Full Text

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.384-389
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• 2009

ZnO, a wurtzite lattice structure, has attracted much attention as a promising material for light-emitting diodes (LEDs) due to highly efficient UV emission resulting from its large band gap of 3.37 eV, large exciton binding energy of 60 meV, and low power threshold for optical pumping at room temperature. For the realization of LEDs, both n-type ZnO and p-type ZnO are required. Now, n-type ZnO for practical applications is available; however, p-type ZnO still has many drawbacks. In this study, ZnO films were grown on glass substrates by using atomic layer deposition (ALD) and the ZnO films were irradiated by nitrogen ion beams (20 keV, $10^{13}{\sim}10^{15}ions/cm^2$). The effects of nitrogen-beam irradiation on the ZnO structure as well as the electrical property were investigated by using fieldemission scanning electron microscopy (FESEM) and Hall-effect measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.38-41
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• 2002

The variation of photoluminescence(PL) properties of Si thin films was investigated by changing deposition temperatures, Si-rich silicon oxide films on p-type (100) Si substrate have been fabricated by pulsed laser deposition(PLD) technique using a Nd:YAG laser. During deposition, the substrates were kept at the temperature range of room temperature(RT) to $400^{\circ}C$. After deposition, samples were annealed at $800^{\circ}C$ in nitrogen ambient, Strong Blue PL has been observed on RT-deposited Si nanocrystallites. When the deposition temperature was increased over $100^{\circ}C$, PL intensities abruptly decreased. The experimental results show the growing mechanism of Si nanocrystallites by PLD.

• 전기의세계
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• v.28 no.9
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• pp.43-50
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• 1979

Silicon nitride films were chemically deposited on silicon substrates by reacting SiCl$_{4}$ and NH$_{3}$ in a nitrogen atmosphere at 700~1100 .deg.C. The deposition rate increased rapidly with deposition temperature upto about 1000 .deg.C, and became less temperature dependent above this temperature. The etch rate of films in buffered HF solution decreased, with an increase of deposition temperature, and a heat treatment at a temperature higher than that of the deposition considerably reduced the etch rate. It indicates that the heat treatment resulted in a densification of the films. Surface charge density of 3~4 * 10$^{11}$ /cm$^{2}$ was determined from the C-V characteristics of MNS diode, and it was also found that surface charge density depended on deposition temperature, but not film thickness. The current-voltage characteristics displayed a logI-V$^{1}$2/ dependence in the temperature range of 300~500.deg.K. Measurement of the slope of this characteristics and its dependence on temperature and bias polarity suggest that conduction in sili con nitride films arises from the Poole-Frenkel mechanism.