• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.532-534
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• 2000

Si thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was varied from 1 to 3 Torr. After deposition, Si thin film has been annealed again at nitrogen ambient. Strong violet-indigo photoluminescence have been observed from Si thin film annealed in nitrogen ambient gas. As increasing environmental gas pressure, weak green and red emissions from annealed Si thin films also observed by photoluminescence.

• Journal of the Korean institute of surface engineering
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• v.27 no.1
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• pp.36-44
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• 1994

The TiN films were deposited on the stainless substrates using arc vapor ion deposition process to in-vestigated the wear resistance. Pin-on-disc tests were performed to measure the volume wear loss of TiN films. The substrate bias voltages and nitrogen flow rates were selected as the deposition parameters of TiN films. It was found that the wear resistance of TiN films was enhanced with increasing bias voltages(0~-300 V) and nitrogen flow rates(220~380 SCCM). The volume wear loss TiN films were about 9.5~2.1$\times$$10^{-3}mm^3$ and 3.5~2.2$\times$$10^{-3}mm^3$ with bias voltages and nitrogen flow rates, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.642-647
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• 2014

For feasible study of opto-electrical application regarding to oxide semiconductor, we implemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnO deposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due to sufficiently deep acceptor location and self-compensating process on doping. Various sources of N such as $N_2$, $NH_3$, NO, and $NO_2$ and deposition techniques have been used to fabricate p-type ZnO. Hall measurement showed that p-type ZnO was prepared in condition with low deposition temperature and dopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defect formation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-doped ZnO thin films grown by atomic layer deposition with $NH_3OH$ doping source.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.64-65
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• 2005

The structural and electrical properties of the films are investigated as a function of nitrogen/argon ratio at room temperature and at various deposition temperatures. The phase changes as $Ta_2N$ or TaN in the films were observed as nitrogen/argon ratio increases from 3% to 25%. The phase changes were associated with a change in the resistivity and TCR (temperature coefficient of resistance) of the films. TCR values of the films deposited at room temperature and different nitrogen contents were negative, and strongly decreased with the increase in nitrogen/argon ratio. The Ta2N films deposited at nitrogen/argon ratio of 3% show improved TCR values and thermal stability with increasing deposition temperature. The $Ta_2N$ films grown at nitrogen/argon ratio of 3% and the temperature of $200^{\circ}C$ showed a TCR value of -47 $ppm/^{\circ}C$, which is close to near-zero TCR in the range of deposition temperature.

• Journal of Environmental Science International
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• v.27 no.3
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• pp.179-193
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• 2018

Nitrogen budgets in Sihwa-ho in 2010 were estimated using a mass balance approach. Major nitrogen fluxes sources can be divided into three sections: cities, agricultural area, and forest. Surplus nitrogen 2,030~2,214 ton/yr (2,123 ton/yr in average) was discharged to Sihwa Lake. 20% of the surplus nitrogen is removed from the wetland and 60% is removed tidal flats. Therefore net nitrogen discharge from Sihwa basin is estimated to be 650~708 ton/yr (679 ton/yr in average). Wet and dry nitrogen deposition and load from non-point sources ware estimated to be 97 ton/yr and 69 ton/yr, deposition is using CAMx model. So estimated total nitrogen discharge into Sihwa-ho was 817~875 ton/yr (846 ton/yr in average). The atmospheric load explains 11.1~11.9% (11.5% in average) of the total nitrogen load Sihwa-ho.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 1997.10a
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• pp.1.1-32
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• 1997

Atmospheric monitoring capabilities were established in 1988 by the University of Florida at Duke forest, near Durham. NC: Cary forest, near Gainesville, FL: and Austin forest, near Nacogdoches, TX. Continuous (hourly averaged) measurements of air quality (ozone, nitrogen oxides and sulfur dioxide) and meteorological variables were made at these three low elevation (< 200 meters), rural locations in the southeastern U.S. for more than three years. During the same period at these sites wet and dry acid deposition samples were collected and analyzed on an event and weekly basis, respectively The monitoring locations were selected to determine actual atmospheric exposure indices for southern pine species in support of on-site surrogate exposure chamber studies conducted by Southern Commercial Forest Research Cooperative (SCFRC) investigators. Daily and quarterly averaged ozone maxima were higher (55 ppb) at the northernmost site in the network (Duke forest) in the second and third quarters (spring and summer seasons) and lower (35 ppb) in the first and fourth quarters (winter and fall seasons), when compared to ozone levels at the two southernmost sites (Cary and Austin forests). Seasonal ozone levels at the latter two sites were similar Nitrogen oxieds and sulfur dioxide levels were insignificant (< 5 ppb) most of the time at all sites, although soil emissions of NO at two sites were found to influence nighttime ozone concentrations. Typical maximum quarterly and annual aggregate ozone exposure indices were significantly higher at Duke forest (92.5/259 ppm-hr) than those values observed at the two southern sites (65.6/210 ppm-hr). Acid deposition (wet and dry) components concentrations and deposition fluxes observed at the Duke forest, NC piedmont site, were generally greater, dependent on site and season, than corresponding variables measured at either of the two southern coastal plain sites (Cary and Austin forests). Acid deposition variables observed at the latter two sites were remarkably similar, both qualitatively and quantitatively, although the sites were located 1300 km apart. A comparison of deposition fluxes of elemental nitrogen (NO3, NH4') and sulfur (5042-, SO3) components in wet and dry forms indicated that wet deposition accounts for approximately 70% of the total nitrogen and 73% of the total sulfur input on an annual equivalent basis at all sites.

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.98-103
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• 2004

The plasma properties in the facing target sputtering system during carbon nitride film deposition have been investigated. The ionized nitrogen species of the deposited films increased with increasing discharge current and were independent of the nitrogen pressure. The nitrogen content in the films did not vary significantly with the variation of nitrogen gas. The electron temperature was high close to that in the inter-cathode region, reduced as the electrons moved away from the most intense region of magnetic confinement and increased again outside this region. Calculations based on the film composition showed that the ion to carbon atom ratio at the substrate was about 50 and that the ratio between the ionized and neutral nitrogen molecules was about 0.25.

• Environmental Engineering Research
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• v.15 no.2
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• pp.111-115
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• 2010

To study the relationship between the concentrations of nitrogen in mountain streams, and anthropologic and natural factors, the water chemistry of the mountain streams in the entire Hyogo Prefecture, Japan, were investigated. A thousand mountain streams were investigated between 1998 and 2001. The concentrations of nitrate nitrogen ranged from 2.92 to 0.1 mg/L, with an arithmetic mean value of 0.45 mg/L. A number of streams showing more than 1.0 mg/L of nitrate nitrogen accounted for 8% of the mountain streams investigated. These results indicated that the concentrations of nitrate nitrogen in the mountain streams were low in the entire Hyogo Prefecture. In general, the mountain stream water in Hyogo Prefecture appears to not have been affected by wet and dry deposition originating from anthropologic sources in mountain streams and Japan. On the other hand, sites with more than 0.8 mg/L nitrate nitrogen were distributed over the entire Hyogo Prefecture, which were classified into five groups. Each group showed unique geographical, geological and anthropological characteristics. No common characteristic among five groups were discover. These results suggest that the cause of high concentrations of nitrogen in mountain streams is not from a uniform set of conditions.

• Journal of Environmental Health Sciences
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• v.31 no.4 s.85
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• pp.260-265
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• 2005

Indoor air quality might be affected by source strength of indoor pollutants, ventilation rate, decay rate, outdoor level, and so on. Although technologies measuring these factors exist directly, direct measurements of all factors are not always practical in most field studies. The purpose of this study was to develop an alternative method to estimate the source strength and deposition constant by application of multiple measurements. For the total duration of 60 days, indoor and outdoor $NO_2$ concentrations every 3 days were measured in 30 houses in Seoul, Asan and Daegu. Using a compartment model by mass balance and linear regression analysis, penetration factor (ventilation divided by sum of air exchange rate and deposition constant) and source strength factor (emission rate divided by sum of air exchange rate and deposition constant) were calculated. Subsequently, the source strength and deposition constant were estimated. Natural ventilation was $1.80{\pm}0.42\;ACH,\;1.11{\pm}0.50\;ACH,\;0.92{\pm}0.26\;ACH$ in Seoul, Asan and Daegu, respectively. Calculated deposition constant(K) and source strength of $NO_2,$ in this study were $0.98{\pm}0.28\;hr^{1}\;and\;16.28{\pm}7.47\;ppb/h,$ respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.236-236
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• 2011

Silicon oxynitride (SiON) was deposited for gas barrier film on polyethylene terephthalate (PET) using octamethylycyclodisiloxane (Si4O4C8H24, OMCTS) precursor by plasma enhanced chemical vapor deposition (PECVD) at low temperature. The ion flux and substrate temperature were measured by oscilloscope and thermometer. The chemical bonding structure and barrier property of films were characterized by Fourier transform infrared (FT-IR) spectroscopy and the water vapor transmission rate (WVTR), respectively. The deposition rate of films increases with RF bias and nitrogen dilution due to increase of dissociated precursor and nitrogen ion incident to the substrate. In addition, we confirmed that the increase of nitrogen dilution and RF bias reduced WVTR of films. Because, on the basis of FT-IR analysis, the increase of the nitrogen gas flow rate and RF bias caused the increase of the C=N stretching vibration resulting in the decrease of macro and nano defects.