• Korean Chemical Engineering Research
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• v.51 no.2
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• pp.163-170
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• 2013

Selective catalytic reduction of $NO_x$ by $NH_3$ ($NH_3$-SCR) over $V_2O_5/TiO_2$-based catalysts is recently reported to be an anthropogenic emitter of $N_2O$ that is a global warming gas with a global warming potential of 310. Therefore, this review will get a touch on significance of some parameters regarding $N_2O$ formation in the $deNO_xing$ reaction for fossil fuels-fired power plants applications. The $N_2O$ production in $NH_3$-SCR reaction with such catalysts occurs via side reactions between $NO_x$ and $NH_3$ in addition to $NH_3$ oxidation, and the extent of these undesired reactions depends strongly on the loadings of $V_2O_5$ as a primary active component and the promoter as a secondary one ($WO_3$ and $MoO_3$) in the SCR catalysts, the feed and operating variables such as reaction temperature, $NO_2/NO_x$ ratio, oxygen concentration, gas hourly space velocity, water content and thermal excursion, and the physical and chemical histories of the catalysts on site. Although all these parameters are associated with the $N_2O$ formation in $deNO_xing$ reaction, details of some of them have been discussed and a better way of suppressing the $N_2O$ production in commercial SCR plants has been proposed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.6
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• pp.252-256
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• 2015

Nitrogen oxides ($NO_X$) was emitted from flue gas of stationary sources and exhaust gas of mobile sources, can leads to various environments problems. Selective Catalysts Reduction (SCR) is the most effective $NO_X$ removal system. Commercial $V_2O_5-WO_3/TiO_2$ catalysts, usually containing $V_2O_5$ 0.5~3 wt%, $WO_3$ 5~10 wt%, and $V_2O_5$ is active in the reduction of $NO_X$ but also in the desired oxidation of $SO_2$ to $SO_3$. To reduce the amount of vanadium, using graphene matrix supported vanadium to synthesize nanocomposite. Then, we fabricated to 1 inch honeycomb type of SCR catalysts adding graphene-vanadium nanocomposite. The chemical-physical characteristics and the catalytic activity were performed by XRD, XRF, BET and Micro-Reactor (MR). As a result, the De-NOX performance was showed, similar to the commercial catalyst activity as 77.8 % and using nanocomposite catalyst as 77.1 % at $350^{\circ}C$.

• Journal of ILASS-Korea
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• v.25 no.1
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• pp.21-26
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• 2020

The objective of this work is to numerically reveal the effect of equivalence ratio change on the simultaneous reduction of NO_X and soot emissions from the simulated-EGR compression ignition engine containing CO₂. An experiment was conducted by using a single-cylinder common-rail injection system engine, an intake control system, and exhaust emissions analyzers. The numerical analysis results were validated under the same experimental conditions. To investigate the effect of equivalence ratio by simulated-EGR containing CO₂, the O₂, N₂, and CO₂ mole fraction were changed in the initial air conditions to the cylinder. The results were analyzed in terms of peak cylinder pressure, indicated mean effective pressure, indicated specific nitrogen oxide, and indicated specific soot. It was revealed that ignition delay characteristics and heat release rate (ROHR) characteristics were not significantly different according to the equivalence ratio. However, as the equivalence ratio increased from 0.68 to 0.83, the maximum combustion pressure and IMEP decreased by about 6.5% and 9.4%, respectively. In the case of ISFC, as is well known, the trend is opposite of IMEP. In the case of ISNO, as the equivalence ratio increased, less NO was generated, and as the equivalence ratio increased by 0.05, the ISSoot value of about 10% increased.

• Korean Journal of Materials Research
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• v.33 no.5
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• pp.195-204
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• 2023

Micro-electronic gas sensor devices were developed for the detection of carbon monoxide (CO), nitrogen oxides (NO_x), ammonia (NH₃), and formaldehyde (HCHO), as well as binary mixed-gas systems. Four gas sensing materials for different target gases, Pd-SnO₂ for CO, In₂O₃ for NO_x, Ru-WO₃ for NH₃, and SnO₂-ZnO for HCHO, were synthesized using a sol-gel method, and sensor devices were then fabricated using a micro sensor platform. The gas sensing behavior and sensor response to the gas mixture were examined for six mixed gas systems using the experimental data in MEMS gas sensor arrays in sole gases and their mixtures. The gas sensing behavior with the mixed gas system suggests that specific adsorption and selective activation of the adsorption sites might occur in gas mixtures, and allow selectivity for the adsorption of a particular gas. The careful pattern recognition of sensing data obtained by the sensor array made it possible to distinguish a gas species from a gas mixture and to measure its concentration.

• Korean Journal of Materials Research
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• v.34 no.5
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• pp.235-241
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• 2024

Gas identification techniques using pattern recognition methods were developed from four micro-electronic gas sensors for noxious gas mixture analysis. The target gases for the air quality monitoring inside vehicles were two exhaust gases, carbon monoxide (CO) and nitrogen oxides (NO_x), and two odor gases, ammonia (NH₃) and formaldehyde (HCHO). Four MEMS gas sensors with sensing materials of Pd-SnO₂ for CO, In₂O₃ for NO_X, Ru-WO₃ for NH₃, and hybridized SnO₂-ZnO material for HCHO were fabricated. In six binary mixed gas systems with oxidizing and reducing gases, the gas sensing behaviors and the sensor responses of these methods were examined for the discrimination of gas species. The gas sensitivity data was extracted and their patterns were determined using principal component analysis (PCA) techniques. The PCA plot results showed good separation among the mixed gas systems, suggesting that the gas mixture tests for noxious gases and their mixtures could be well classified and discriminated changes.

• Journal of Environmental Health Sciences
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• v.33 no.2 s.95
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• pp.92-97
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• 2007

A series of source tests were conducted to characterize emissions of nitrogen oxide(NOx, NO, $NO_2$), carbon mon oxide(CO), carbon dioxide$(CO_2)$ and total VOCs from portable combustion devices in steady-state using well-mixed chamber. Since use of portable gas range is widespread in houses and restaurants in Korea, it is important to characterize the emission of air pollutants and suggest optimum ventilation rate. Ranges of emission rates of air pollutants from portable gas ranges were $NO \;0.551\sim0.939mg/hr,\;NO_2\;0.354\sim1.080mg/hr,\;NO_x\;1.207\sim1.631mg/hr,\;CO\;1.389\sim4.21mg/hr,\;CO_2\;2426.823\sim2973.495mg/hr$, and VOCs $0\sim0.119mg/h$. Mean of personal exposure and indoor environment level of $NO_2$ by combustion of portable gas range were 74.7 ppb and 65.4 ppb, respectively, suggesting persons using portable gas range in houses and restaurants might be highly exposed. Required ventilation rate to control the air pollutants emitted from portable gas range was maximumly $3.131m^3/hr$ on the basis of $NO_2$ indoor air quality standard.

• Korean Journal of Materials Research
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• v.34 no.5
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• pp.254-260
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• 2024

This study is to manufacture a titanium dioxide (TiO₂) photocatalyst by recycling sludge generated using titanium tetrachloride (TiCl₄) as a coagulant. Compared to general sewage, a TiCl₄ coagulant was applied to dyeing wastewater containing a large amount of non-degradable organic compounds to evaluate its performance. Then the generated sludge was dried and fired to prepare a photocatalyst (TFS). Scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDX), X-ray diffraction (XRD), and nitrogen oxide reduction experiments were conducted to analyze the surface properties and evaluate the photoactive ability of the prepared TFS. After using titanium tetrachloride (TiCl₄) as a coagulant in the dyeing wastewater, the water quality characteristics were measured at 84 mg/L of chemical oxygen demand (COD), 10 mg/L of T-N, and 0.9 mg/L of T-P to satisfy the discharge water quality standards. The surface properties of the TFS were investigated and the anatase crystal structure was observed. It was confirmed that the ratio of Ti and O, the main components of TiO₂, accounted for more than 90 %. As a result of the nitric oxide (NO) reduction experiment, 1.56 uMol of NO was reduced to confirm a removal rate of 20.60 %. This is judged to be a photocatalytic performance similar to that of the existing P-25. Therefore, by applying TiCl₄ to the dyeing wastewater, it is possible to solve the problems of the existing coagulant and to reduce the amount of carbon dioxide generated, using an eco-friendly sludge treatment method. In addition, it is believed that environmental and economic advantages can be obtained by manufacturing TiO₂ at an eco-friendly and lower cost than before.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1577-1587
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• 1994

TiO2 thin films with the substitution of oxygen with nitrogen were deposited on silicon substrate by metalorganic chemical vapor deposition (MOCVD) using Ti(OCH(CH3)2)4 (titanium tetraisopropoxide, TTIP) and N2O as source materials. X-ray diffraction (XRD) results indicated that the crystal structure of the deposited thin films was anatase TiO2 with only (101) plane observed at the deposition temperatures of 36$0^{\circ}C$ and 38$0^{\circ}C$, and with (101) and (200) plane at above 40$0^{\circ}C$. Raman spectroscopic results indicated that the crystal structure was anatase TiO2 in accordance with the XRD results without any rutile, fcc TiN, or hcp TiN structure. No fundamental difference was observed with temperature increase, but the peak intensity at 194.5 cm-1 increased with strong intensity at 143.0 cm-1 for all samples. The crystalline size of the films varied from 49.2 nm to 63.9 nm with increasing temperature as determined by slow-scan XRD experiments. The refractive index of the films increased from 2.40 to 2.55 as temperature increased. X-ray photoelectron spectroscopy (XPS) study showed only Ti 2s, Ti 2p, C 1s, O 1s and O 2s peaks at the surface of the film. The composition of the surface was estimated to be TiO1.98 from the quatitative analysis. In the bulk of the film Ti 2s, Ti 2p, O 1s, O 2s, N 1s and N 2s were detected, and Ti-N bonding was observed due to the substitution of oxygen with nitrogen. A satellite structure was observed in the Ti 2p due to the Ti-N bonding, and the composition of titanium nitride was determined to be about TiN1.0 from the position of the binding energy of Ti-N 2p3/2 and the quatitative analysis. The spectrum of Ti 2p energy level could be the sum of a 4, 5, or 6 Gaussian curve reconstruction, and the case of the sum of the 6 Gaussian curve reconstruction was physically most meaningful. From the results of Auger electron spectroscopy (AES), it was known that the composition was not varied significantly throughout the whole thickness of the film, and silicon oxide was not observed at the interface between the film and the substrate. The composition of the film was possible (TiO2)1-x.(TiN)x or TiO2-2xNx and in this experimental condition x was found to be about 0.21-0.16.

• Clean Technology
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• v.24 no.4
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• pp.307-314
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• 2018

In this study, NMO (Natural Manganese Ore), $MnO_2$, and $Mn_2O_3$ catalysts were used in the selective catalytic reduction process to remove nitrogen oxides (NOx) using $NH_3$ as a reducing agent at low temperatures in the presence of oxygen. In the case of the NMO (Natural Manganese Ore), it was confirmed that the conversion of nitrogen oxides in the stability test did not change even after 100 hours at 423 K. The Kinetics experiments were carried out within the range where heat and mass transfer were not factors. From a steady-state Kinetics study, it was found that the low-temperature SCR reaction was zero order with the respect to $NH_3$ and 0.41 ~ 0.57 order with the respect to NO and 0.13 ~ 0.26 order with the respect to $O_2$. As temperature increases, the reaction order decreases as a result of $NH_3$ and oxygen concentration. It was confirmed that the reaction between the $NH_3$ dissociated and adsorbedon the catalyst surface and the gaseous nitrogen monoxide (E-R model) and the reaction with the adsorbed nitrogen monoxide (L-H model) occur.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.