• Journal of the Korean Ceramic Society
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• v.47 no.2
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• pp.157-162
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• 2010

Effect of starting SiC particle size on nitridation rate and flexural strength of $Si_3N_4$-bonded-SiC (SNBSC) ceramics was investigated by using SiC particles of different size (${\sim}200\;{\mu}m$, ${\sim}100\;{\mu}m$ and ${\sim}45\;{\mu}m$). The specimen prepared from smaller SiC particles resulted in higher nitridation rate after nitridation at $1450^{\circ}C$, owing to the lower packing density in green body. The flexural strength showed maxima after 1-h nitridation for all specimens and then decreased with prolonged nitridation because of local densification-induced pore coarsening. The specimen prepared from smaller SiC particles showed better flexural strength because of smaller pore size and partly higher nitridation rate in the specimen. A maximal flexural strength of 29 MPa was obtained in the specimen with a density of $2.04\;g{\cdot}cm^3$, which was prepared from $45\;{\mu}m$-SiC particles.

• Journal of the Korean Ceramic Society
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• v.43 no.8 s.291
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• pp.472-478
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• 2006

The effect of compositional and processing variables on a nitriding reaction of silicon powder compact and subsequent post sintering of RBSN (Reaction-Bonded Silicon Nitride) was investigated. The addition of a nitriding agent enhanced nitridation rate substantially at low temperatures, while the formation of a liquid phase between the nitriding agent and the sintering additives at a high temperature caused a negative catalyst effect resulting in a decreased nitridation rate. A liquid phase formed by solely an additive, however, was found to have no effect on nitridation for the additive amount used in this research. The original site of a decomposing pore former was loosely filled by a reaction product ($Si_3N_4$), which provided a specimen with nitriding gas passage. For SRBSN (Sintered RBSN) specimens of high porosity, only a marginal dimensional change was measured after post sintering. Its engineering implication for near-net shaping ability is discussed.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.893-901
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• 1994

In this study, AlN powder of fine particle size and of high purity was synthesized by the carbothermal reduction-nitridation of monodisperse, spherical Al(OH)3 which had been prepared by sol-gel method using Al(O-sec-C4H9)3 as the starting material. Depending on the mixing order and kinds of reducing agents, the optimum condition for the preparation of AlN was determined as follows. AlN single-phase was produced by the carbothermal reduction-nitridation of (1) Benzene-washed Al(OH)3 and the reducing agent, carbon, which was mixed in a ball mill: for 5 hours at 140$0^{\circ}C$ under NH3 atmosphere; (2) The mixture prepared by hydrolysis of alkoxide solution into which carbon had been dispersed beforehand: for 5 hours at 135$0^{\circ}C$ ; (3) Al(OH)3 Poly(furfuryl alcohol) composite powder: for 2.5 hours at 135$0^{\circ}C$; (4) The mixture of Al(OH)3 and polyacrylonitrile: for 5 hours at 140$0^{\circ}C$. Addition of CaF2 increased the nitridation rate when carbon or polyacrylonitrile was used as the reducing agent; but it had no effect on the nitridation rate when furfuryl alcohol was used as the reducing agent.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.4
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• pp.149-153
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• 2019

HVPE is one of the GaN single crystal manufacturing methods which has been commercially widely used due to its high growth rate. HVPE method consists of a number of processes, in particular the nitridation of the substrate prior to GaN growth has a significant effect on the crystalline quality of the manufactured GaN single crystal. In this study, we investigated the effect of nitridation for crystalline quality of GaN when it was grown on the sapphire substrate. The whole growth conditions except for the nitridation process were the same, and the gas flow rate supplied to the sapphire substrate was variously changed during the nitridation. Here, we examined the effect of nitridation via the surface characterization of GaN single crystal grown by HVPE.

• Journal of the Korean Ceramic Society
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• v.21 no.3
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• pp.253-258
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• 1984

This paper deals with the reaction-bonded silicon nitride I terms of its microstructural development during nitrida-tion. Silicon powder compacts were reacted with nitrogen at 1185$^{\circ}C$ and 13$65^{\circ}C$ according to the nitriding schedule. Microstructures of nitrided specimens were examined by means of optical and scanning electron microscope to discuss the nitridation or microstructural development at initial and intermediat stage of nitridation. Reaction products were also analysed by X-ray diffraction method at each stage of nitridation. The results indicate that ho-mogeneous and uniform microstructure with find porosity can be obtained only under the reaction condition. such as slow and relatively constant reaction rate with time.

• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.647-653
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• 1991

In order to synthesize fine AlN powder by the direct nitridation of Aluminum metal power added LiF and BaF2 as additives was heated at 150$0^{\circ}C$ for 3 hrs. in nitrogen gas with flow rate of 20 mι/sec. Additives are promoted the nitridation by prevented the aggromerate of powders when 3% LiF and 2% BaF2 were added to Al metal powder. Rate of nitridation was about 100% and average size of AlN powders were very fine such as 0.3 ${\mu}{\textrm}{m}$. Specific surface area of synthesized AlN powder was 3.95$m^2$/g and also O2 and N2 contents were 2.595% and 33.25%, respectively.

• Korean Chemical Engineering Research
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• v.60 no.4
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• pp.620-629
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• 2022

By varying various experimental conditions such as heating rate, molar hourly space velocity (MHSV), and nitridation reaction temperature, vanadium oxynitride was prepared through temperature programmed reduction/nitridation reaction (TPRN) of vanadium pentoxide and ammonia, and characterization were performed. In order to investigate the physico-chemical properties of the prepared catalyst, N₂ adsorption-desorption analysis, X-ray diffraction analysis (XRD), hydrogen temperature programmed reduction (H₂-TPR), temperature programmed oxidation (TPO), ammonia temperature programmed desorption (NH₃-TPD), transmission electron microscopy (TEM) was performed. Transformation of V₂O₅ with 5 m² g^-1 low specific surface area by reduction at 340 ℃ to V₂O₃ showed a high specific surface area value of 115 m² g^-1 by micropore formation. As the nitridation temperature increased beyond that, the specific surface area continued to decrease due to sintering. The nitridation reaction variable that had the greatest influence on the specific surface area was the reaction temperature, and the x + y value of VN_xO_y of a single phase approached from 1.5 to 1.0 as the nitridation reaction temperature increased. At a high reaction temperature of 680 ℃, the cubic lattice constant a was VN. close to the value. At 680 ℃, the highest nitridation temperature among the experimental conditions, the ammonia conversion rate was 93%, and no deactivation was observed.

• Journal of the Korean Ceramic Society
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• v.20 no.4
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• pp.305-314
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• 1983

In order to enhance the rate of th nitridation and to give the high density of reaction-bonded silicon nitride MgO powder as nitriding aid were added to silicon powders and the mixture was pressed isostatically into compacts which were nitrided in the furnace of 1, 35$0^{\circ}C$ where 95% $N_2$-5% $H_2$ gases were flowing. As the other nitriding aid $Mg(NO_3)_2 6H_2O$ was selected, A slip made of magnesium nitrate solution and fine silicon particles was spray-dried and then decomposed at 30$0^{\circ}C$. Magnesium oxide-coated silicon powders were formed into compacts prior to the nitridation on the same condition as the former. Magnesium nitrate (MgO, produced from the decomposition of magnesium nitrate) was more effective for the formation of the $\beta$-phase in the initial stage of the nitridation probably due to the easy formation of $MgO-SiO_2$-metal oxide eutectic melt. It has been confirmed that forsterite was formed as a result of the reaction between MgO and $SiO_2$ film of silicon surface. It was considered that MgO produced from magnesium nitrate may be finer more reactive and more uniformly distributed on the surface of silicon particles than original MgO. The higher the forming pressure was the more the $\beta$-phase was formed.

• Journal of the Korean Society for Heat Treatment
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• v.8 no.2
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• pp.137-148
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• 1995

The nitridation kinetics of titanium powder were studied by isothermal and non-isothermal (dynamic) methods in high purity nitrogen under I atm pressure. For the comparison with nitridation, the oxidation kinetics of titanium powder were also studied in dry oxygen at I atm pressure. An automatic recording electrobalance was used to measure the weight gain as a function of time and temperature. For the reaction with nitrogen, the nitride was formed at over $700^{\circ}C$. The reaction with nitrogen followed the parabolic rate law, and the activation energy was calculated to be 31 kcal/mol in the isothermal method (above $900^{\circ}C$). The non-stoichiometric TiNx has been synthesized by the nitridation at a proper temperature and time, followed by the homogenizing treatment above $1100^{\circ}C$. In comparison with the stoichiometric $TiN_{1.0}$ and the non-stoichiometric TiNx ($TiN_{0.5}$ and $TiN_{0.65}$), the hot oxidation characteristics of the former is superior to that of the latter. However, both non-stoichiometric nitrides make little difference in the hot oxidation characteristics.

• Resources Recycling
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• v.26 no.3
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• pp.39-46
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• 2017

AlN powder was prepared by carbon reduction and subsequent nitridation method through lab- scale experiments. AlN powder was synthesized using the mixture of high purity $Al_2O_3$ powder and carbon black at $1,600{\sim}1,700^{\circ}C$ for 0.5~6 hours under nitrogen atmosphere (flow rate of nitrogen gas: $4.7{\times}10^{-6}{\sim}20{\times}10^{-6}m^3/sec$) with variation of charged height of the mixture powder. Experimental results showed that size of the synthesized particles grows with increasing of temperature. The reaction activation energy was calculated as 382 kJ/mol at the temperature range, and it was considered that chemical reaction is the rate determining step. Content of oxygen and nitrogen of the prpared samples were 0.71~0.96 wt% and 30.7~35.1 wt%. The results was similar with those of the commercial AlN product.