• Applied Chemistry for Engineering
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• v.8 no.5
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• pp.742-748
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• 1997

Diamond films which have high hardness and thermal conductivity can be used to improve the performance of WC-Co as a cutting tool material. However, it is difficult to get such coatings of good uniformity and adhesiveness due to the surface characteristics of WC-Co. To get better coatings, some techniques, such as the surface treatment of substrate or the formation of interlayer between substrate and diamond film, have been tried. In the present work, the nickel interlayer is formed onto WC-Co by electroless Ni-P plating, which is introduced as a new method, and then diamond film is deposited on the interlayer. Formation and uniformity of three layers, i.e., substrate, electroless plate, and diamond film, and the adhesiveness of interlayers were studied. To investigate the effects of pretreatment on electroless plating, two different methods such as acid treatment and diamond powder treatment were used. The effects of heat treatment of the electroless plated surface on adhesiveness between the substrate and the interlayer were examined. It was found that as the temperature increases, the Ni crystals grow and then result in improved adhesiveness. Diamond film coatings of pure diamond phase were obtained at $800^{\circ}C$. It is concluded that the heat treated electroless Ni-P plating can be effectively used as a interlayer between WC-Co substrate and diamond film.

• Journal of the Korean Society for Precision Engineering
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• v.9 no.2
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• pp.52-60
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• 1992

In this study on the development of the heat flux sensor, unlike the common heat-flux sensor with thermocouple, the heat-treated adhesive-tupe film nickel-gauge was used in measuring temperature. The proposed its Ni-gauge is bound to be compatible with platinum gauge(Pt-Gauge) in its linearity. It is also considered to be cheap in economical sense. In the evaluation of it's performance, the numerical analysis is essential to investigate charateristics of proper sensor and the adequate analsis is depended upon boundary conditions and actual conditions. There are many types of heat flux sensor in the market, and adhexive type flux sensor is most common. In the present investigation, this type of heat flux sensor had been chosen. The figure of the sensor under consideration is an open cavity type, which is calculated numerically by SIMPLER algorithm. The temperature distributions of the sensor predicted by numerical calculation for steady and unsteady states are able to give the chacteristics of the adhesive type heat flux sensor(1st heat flux sensor) according to the heat flux. It means that the outvoltage, the sensitivity, and the performances of responsibility could be evaluated as a result. Through this analysis improved heat flux sensor(2nd heat flux sensor) could be predicted with the reflection of proper operating temperature($150^{\circ}C$) of the Ni-gauge.

• Journal of the Korean Electrochemical Society
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• v.6 no.2
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• pp.103-112
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• 2003

Various kinds of metals were coated on synthetic graphite in order to investigate the relationship between film characteristics and their electrochemical performance. Gas suspension spray coating method was employed for the coating of synthetic graphite. In our experimental range, all of the metal coated synthetic graphite showed the higher capacity than that of raw material at high C-rate mainly due to decrease in impedance of passivation film. In cyclic voltammetry experiments, silver-coated and tin-coated graphite anodes found the lithium-alloy reaction. Considering smaller amount of metal coating, the most increase in discharge capacity was caused by improvement of conductivity of the electrode. When single-component metal was coated, silver-coated graphite anode exhibited the highest discharge capacity and better cycleability. Double components of silver-nickel coated active material showed the highest discharge capacity, rate capability and the best cycle performance in the range of our experiments.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.133-138
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• 2013

Acrylonitrile-butadiene-styrene (ABS) plastic is a polymer material extensively used in electrical and electronic applications. Nickel (Ni) thin film was deposited on ABS by electroless plating, after its surface was treated and modified with atmospheric plasma generated by means of dielectric barrier discharges (DBDs) in air. The method in this study was developed as a pre-treatment for electroless plating using DBDs, and is a dry process featuring fewer processing steps and more environmentally friendliness than the chemical method. After ABS surfaces were modified, surface morphologies were observed using a scanning electron microscope (SEM) to check for any physical changes of the surfaces. Cross-sectional SEM images were taken to observe the binding characteristics between metallic films and ABS after metal plating. According to the SEM images, the depths of ABS by plasma are shallow compared to those modified by chemically treatment. The static contact angles were measured with deionized (DI) water droplets on the modified surfaces in order to observe for any changes in chemical activities and wettability. The surfaces modified by plasma showed smaller contact angles, and their modified states lasted longer than those modified by chemical etching. Adhesion strengths were measured using 3M tape (3M 810D standard) and by 90° peel-off tests. The peel-off test revealed the stronger adhesion of the Ni films on the plasma-modified surfaces than on the chemically modified surfaces. Thermal shock test was performed by changing the temperature drastically to see if any detachment of Ni film from ABS would occur due to the differences in thermal expansion coefficients between them. Only for the plasma-treated samples showed no separation of the Ni films from the ABS surfaces in tests. The adhesion strengths of metallic films on the ABS processed by the method developed in this study are better than those of the chemically processed films.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.794-801
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• 1995

To connect the driver IC and Al coated glass, a method has been developed to plate electrolessly Ni on Al/PR system. It Is necessary to pretreat Al to remove oxide film before plating. In order to find pretreatment process which does not damage photoresist or glass, alkaline and fluoride zincate process have been investigated. Because photoresist and aluminum thin film can easily dissolve in alkaline solution, it is considered that the fluoride zincate process was a suitable one. After immersion in the zincate solution containing 1.5 g/$\ell$ ammonium bifluoride and 100 g/$\ell$ zinc sulfate, electroless nickel plating could be performed. The additive in the zincate solution and thiourea in the plating solution increased smoothness of the plated surface. Acld dip could improve the uniformit of the surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.208-208
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• 2013

Graphene has emerged as a fascinating material for next-generation nanoelectronics due to its outstanding electronic properties. In particular, graphene-based field effect transistors (GFETs) have been a promising research subject due to their superior response times, which are due to extremely high electron mobility at room temperature. The biggest challenges in GFET applications are control of carrier concentration and opening the bandgap of graphene. To overcome these problems, three approaches to doping graphene have been developed. Here we demonstrate the decoration of Ni nanoparticles (NPs) on graphene films by simple annealing for p-type doping of graphene. Ni NPs/graphene films were fabricated by coating a $NiCl2{\cdot}6H2O$ solution onto graphene followedby annealing. Scanning electron microscopy and atomic force microscopy revealed that high-density, uniformly sized Ni NPs were formed on the graphene films and the density of the Ni NPs increased gradually with increasing $NiCl2{\cdot}6H2O$ concentration. The formation of Ni NPs on graphene films was explained by heat-driven dechlorination and subsequent particlization, as investigated by X-ray photoelectron spectroscopy. The doping effect of Ni NPs onto graphene films was verified by Raman spectroscopy and electrical transport measurements.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.6
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• pp.256-259
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• 2006

The amorphous $SiO_x$ nanowires were synthesized by the vapor phase epitaxy (VPE) method. $SiO_x$ nanowires were formed on silicon wafer of temperatures ranged from $800{\sim}1100^{\circ}C$ and nickel thin film was used as a catalyst for the growth of nanowires. A vapor-liquid-solid (VLS) mechanism is responsible for the catalyst-assisted amorphous $SiO_x$ nanowires synthesis in this experiment. The SEM images showed cotton-like nanostructure of free standing $SiO_x$ nanowires with the length of more than about $10{\mu}m$. The $SiO_x$ nanowires were confirmed amorphous structure by TEM analysis and EDX spectrum reveals that the nanowires consist of Si and O.

• Journal of the Korean institute of surface engineering
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• v.51 no.4
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• pp.231-236
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• 2018

We report p-type electrical characteristics of the amorphous $La_2NiO_{4+{\delta}}$ thin films which were sputtered on the glass substrates using an RF sputtering system. As-deposited thin films at room temperature and $300^{\circ}C$ were amorphous in nature. Post-annealing of the thin film samples over $400^{\circ}C$ resulted in the nano-crystallization of the $La_2NiO_{4+{\delta}}$. The electrical properties of the films were much dependent on the oxygen partial pressure, temperature of the post-annealing and sputtering ambient. The as-deposited samples at room temperature show a hole concentration of $7.82{\times}10^{13}cm^{-3}$, and it could be increased as high as $3.51{\times}10^{22}cm^{-3}$ when the films were post-annealed in an oxygen atmosphere at $500^{\circ}C$. Such p-type conductivity behavior of the $La_2NiO_{4+{\delta}}$ films suggests that the amorphous and nano-crystallized $La_2NiO_{4+{\delta}}$ films have potential for the application as p-type semiconductive or conductive materials at low temperatures where material diffusion is limited.

• Journal of the Korean Magnetics Society
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• v.8 no.6
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• pp.369-373
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• 1998

The exchange anisotropy between NiO antiferromagnetic layer and NiFe ferromagnetic layer has been investigated in NiFe(10 nm)/NiO(60 nm) formed by magnetron sputtering. The NiO films were sputtered from nickel oxide using R. F. poser and NiFe, Ta were deposited using D. C. power under Ar atmosphere. Above all. we studied the exchange anisotropy of Ni-Fe/NiO bilayer, and focused especially on the effect of NiO depostion condition. Our experimental data showed that the dominant factor for determining the exchange anisotropy properties was the Ar pressure during NiO deposition. The better exchange anisotropy properties were found when the NiO film was deposited at low Ar pressure probably due to the flatten interface and the epitaxial tendency of NiO grains and NiFe grains. However, as Ar pressure increased, interfacial diffusion at NiFe/NiO interface and oxygen content of NiO film increase, and consequently reduced the exchange anisotropy. We concluded that the flatten interface and relatively low oxygen content of NiO layer are dominant factors for the enhancement of the exchange anisotropy in NiFe/NiO bilayer.

• Current Photovoltaic Research
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• v.12 no.1
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• pp.1-5
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• 2024

Perovskite solar cells have exhibited a remarkable increase in efficiency from an initial 3.8% to 26.1%, marking a significant advancement. However, challenges persist in the commercialization of perovskite solar cells due to their low stability with respect to humidity, light exposure, and temperature. Moreover, the instability of the organic charge transport layer underscores the need for exploring inorganic alternatives. In the manufacturing process of the perovskite solar cells' oxide charge transport layer, ultraviolet-ozone (UVO) treatment is commonly applied to enhance the wettability of the perovskite solution. The UVO treatment on metal oxides has proven effective in suppressing surface oxygen vacancies and removing surface organic contaminants. This study focused on the characterization of nickel oxide as the hole transport material in perovskite solar cells, specifically investigating the impact of UVO treatment on film properties. Through this analysis, changes induced by the UVO treatment were observed, and consequent alterations in the device characteristics were identified.