• Journal of Power System Engineering
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• v.4 no.2
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• pp.31-39
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• 2000

Relationships between the plating condition and the plating rate of the deposition film for the electroless plating of Co-Cu-P alloy were discussed in this report. The result obtained from this experiment were summarized as follow ; The optimum bath composition was consisted of 0.8 ppm thiourea as a stabilizing agent. Composition of the deposit was found to be uniform after two hours of electroless plating. Plating rates of nickel-catalytic surface and zincate-catalytic surface were found to be very closely equal, but the plating time of nickel-catalytic surface took longer than that of the zincated-catalytic surface.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2224-2226
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• 2000

In this paper, we tried to figure out the residual stress of Electroless Nickel (EN) films as a function of process conditions: bath temperatures, pH values, and hypophosphorous acid concentrations. The residual stresses of EN films were in the range of - 4 MPa to 250 MPa depending on process conditions and they were very sensitive to phosphorous concentration in EN film and also hypophosphorous acid concentrations in EN bath.

• Corrosion Science and Technology
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• v.15 no.1
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• pp.13-17
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• 2016

The aim of this study was to evaluate the use of iron-nickel oxide ($Fe_2O_3$.NiO) nanopowder (FeNi) as an anti-corrosion pigment for a different application. The corrosion protection ability and the mechanism involved was determined using aqueous solution of FeNi prepared in a corrosive solution containing 3.5 wt.% NaCl. Anti-corrosion abilities of aqueous solution were determined using electrochemical impedance spectroscopy (EIS) on line pipe steel (API 5L X-80). The protection mechanism involved the adsorption of metallic cations on the steel surface forming a protective film. Analysis of EIS spectra revealed that corrosion inhibition occurred at low concentration, whereas higher concentration of aqueous solution produced induction behavior.

• Journal of Electrochemical Science and Technology
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• v.10 no.2
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• pp.123-130
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• 2019

We investigated the electrochemical behavior of an electrode coated with a nickel hexacyanoferrate/graphene oxide (NiPB/GO) composite to evaluate its potential use for the electrochemical separation of radioactive Cs as a promising approach for reducing secondary Cs waste after decontamination. The NiPB/GO-modified electrode showed electrochemically switched ion exchange capability with excellent selectivity for Cs over other alkali metals. Furthermore, the repetitive ion insertion and desertion test for assessing the electrode stability showed that the electrochemical ion exchange capacity of the NiPB/GO-modified electrode increased further with potential cycling in 1 M of $NaNO_3$. In particular, this electrochemical treatment enhanced Cs uptake by nearly two times compared to that of NiPB/GO and still retained the ion selectivity of NiPB, suggesting that the electrochemically treated NiPB/GO composite shows promise for nuclear wastewater treatment.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.907-912
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• 2005

Micro-patterns of $Pb(Zr_{0.53}Ti_{0.47})O_3$, PZT, thin films with a MPB composition were deposited on $Pt/Ti/SiO_2/Si$ substrate from molecular-designed PZT precursor solution by using self-assembledmonolayer(SAM) as a template. This method includes deposition of SAM followed by the optical etching by exposing the SAM to the UV-light, leading to the patterned SAM as a selective deposition template. The pattern of SAM was formed by irradiating UV-light to the SAM on a substrate and/or patterned PZT thin film through a metal mask for the selective deposition of patterned PZT or lanthanum nickel oxide (LNO) precursor films from alkoxide-based precursor solutions. As a result, patterned ferroelectric PZT and PZT/LNO thin film capacitors with good electrical properties in micrometer size could be successfully deposited.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.219-219
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• 2010

Silicides have been commonly used in the Si technology due to the compatibility with Si. Recently the silicide has been applied in solar cells [1] and nanoscale interconnects [2]. The modulation of Ni silicide phase is an important issue to satisfy the needs. The excellent electric-conductive nickel monosilicide (NiSi) nanowire has proven the low resistive nanoscale interconnects. Otherwise the Ni disilicide (NiSi2) provides a template to grow a crystalline Si film above it by the little lattice mismatch of 0.4% between Si and NiSi2. We present the formation of Ni silicide phases performed by the single deposition and the co-deposition methods. The co-deposition of Ni and Si provides a stable Ni silicide phase at a reduced processing temperature comparing to the single deposition method. It also discusses the Schottky contact formation between the Ni silicide and the grown crystalline Si film for the solar cell application.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.174-175
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• 2014

We fabricated a Ni/C composite thick film on ${\alpha}-Al_2O_3$ substrate. A number of precipitations were observed on the film surface. Structural characterization was performed on the observed precipitations using transmission electron microscopy (TEM) with help of the elemental mapping, electron diffraction (ED) and ED simulation. The structural characterization revealed that the precipitation is ${\theta}-Al_2O_3$ having the space group of C2/m (Monoclinic).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.271-272
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• 2008

We fabricated a pentacene thin-film transistor with Ni/Ag source/drain electrodes. Also, we obtained similar electrical characteristics as compared with source/drain electrode with Au. This device was found to have a field-effect mobility of about 0.021 $cm^2$/Vs, a threshold voltage of -5, -7 V, an subthreshold slope of 2.0, 4.5 V/decade, and an on!off current ratio of $3.6\times10^5$, $2.0\times10^6$.

• Journal of the Korean institute of surface engineering
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• v.55 no.5
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• pp.299-307
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• 2022

Gold plating is used as a coating of connector in printed circuit boards, ceramic integrated circuit packages, semiconductor devices and so on, because the film has excellent electric conductivity, solderability and chemical properties such as durability to acid and other chemicals. In most cases, internal connection between device and package and external terminals for connecting packaging and printed circuit board are electroless Ni-P plating followed by immersion Au plating (ENIG) to ensure connection reliability. The deposition behavior and film properties of electroless Au plating are affected by P content, grain size and mixed impurity components in the electroless Ni-P alloy film used as the underlayer plating. In this study, the correlation between electroless nickel plating used as a underlayer layer and cyanide-free electroless Au plating using thiomalic acid as a complexing agent and aminoethanethiol as a reducing agent was investigated.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.5
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• pp.245-248
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• 2010

Sn doped $In_2O_3$ (ITO) and ITO/Ni/ITO (INI) multilayer films were deposited on the glass substrates with a reactive magnetron sputtering system without intentional substrate heating and then the influence of the Ni interlayer on the methanol gas sensitivity of ITO and INI film sensors were investigated. Although both ITO and INI film sensors have the same thickness of 100 nm, INI sensors have a sandwich structure of ITO 50 nm/Ni 5 nm/ITO 45 nm. The changes in the gas sensitivity of the film sensors caused by methanol gas ranging from 100 to 1000 ppm were measured. It is observed that the INI film sensors show the higher sensitivity than that of the ITO single layer sensors. Finally, it can be concluded that the INI film sensor have the potential to be used as improved methanol gas sensors.