• Title/Summary/Keyword: NiSi/sub x/

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Growth of Highly (100) Oriented (Na0.5Bi0.5)TiO3 Thin Films on LaNiO3 Electrode (LaNiO3 전극위에 (100)으로 배향된 (Na0.5Bi0.5)TiO3 박막의 성장)

  • Yoo Young-Bae;Park Min-Seok;Son Se-mo;Chung Su-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.2
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    • pp.176-180
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    • 2006
  • [ $(Na_{0.5}Bi_{0.5})TiO_3$ ][NBT] thin films were prepared on a highly (100) oriented $LaNiO_3[LNO]$ by sol-gel process. X-ray diffraction patterns of the NBT films annealed above $600^{\circ}C$ for 5 minutes have confirmed a highly (100) oriented growth and pseudocubic structure (a=3.884${\AA}$). The (l00) orientation factor increased from 90 to $99\%$ with increasing soaking time from 5 to 60 minutes at $600^{\circ}C$. The NBT films ($600^{\circ}C$/5 min,) have a flat and dense microstructure with large columnar grains, and their grain size are about 44 nm. The Au/NBT/LNO/Si hetero structure sample show a ferroelectric properties.

A Study On the Electrical Characteristic of WO3 and NiO-WO3 Thin Films Prepared by Thermal Evaporation (Thermal Evaporation법에 의해 제조된 WO3 박막과 NiO-WO3박막의 전기적 특성에 관한 연구)

  • Na Eun-young;Na Dong-myong;Park Jin-seong
    • Journal of the Korean Electrochemical Society
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    • v.8 no.1
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    • pp.32-36
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    • 2005
  • [ $WO_3$ ] and $NiO-WO_3$ thin films were deposited on a Si (100) substrate by using high vacuum thermal evaporation. The effects of various film thicknesses on the surface morphology $WO_3$ and $NiO-WO_3$ thin films were investigated. X-ray diffraction (XRD), Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the deposited films. The results suggest that as $WO_3$ thin films became thick, their grain grew up to a $0.6{\mu}m$. On the other hand, NiO-doping to $WO_3$ thin films inhibited the grain growth five times less than undoped $WO_3$ thin films. This results show that NiO doping inhibited the grain growing of $WO_3$ thin films. Also, the variation of NOx sensitivity $(R_{NOx}/R_{air})$ to the thickness of $WO_3$ and $NiO-WO_3$ thin films were measured according to the thickness change of thin films and the working temperature of sensor in 5ppm NOx gas. As a result, $NiO-WO_3$ thin films showed more excellent properties than $WO_3$ thin films for NOx sensitivity.

The Effect of Rare-Earth Additives on Dielectric Properties of X7R MLCC Composition (X7R용 적층 칩 세라믹 캐패시터 조성의 희토류 첨가에 따른 유전 특성)

  • 이석원;윤중락
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12
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    • pp.1080-1086
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    • 2003
  • Effects of E$_2$O$_3$. HO$_2$O$_3$ and Dy$_2$O$_3$ addition on dielectric properties of non-reducible BaTiO$_3$ based X7R dielectrics with Ni electrode have been studied in a reduced atmosphere. As the content of rare-earth with E$_2$O$_3$. HO$_2$O$_3$, Dy$_2$O$_3$ was less than 3wt%, The TCC(Temperature Capacitance Change) and insulation resistance characteristics were improved by compensate the oxygen vacancies due to occupy either the Ba or Ti site. We developed the composition of X7R (EIA standard) for higher capacitance MLCC which had high reliability electric properties by the addition of Er ion into BaTiO$_3$ + MgO + Y2O$_3$ + MnO + (Ba$\sub$0.4/Ca$\sub$0.6/)SiO$_3$ composition.

Electrochemical Properties of Cu Current Collector with Li0.5La0.5TiO3 or Si Thin Film as a Li Free Anode (Li0.5La0.5TiO3와 Si박막을 갖는 구리 집전체의 Li free 음극으로써의 전기화학적 특성)

  • Lee Jae-Jun;Kim Soo-Ho;Lee Jong-Min;Yoon Young-Soo
    • Journal of the Korean Electrochemical Society
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    • v.9 no.1
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    • pp.34-39
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    • 2006
  • Electrochemical properties of Cu foil current collector with a $Li_{0.5}La_{0.5}TiO_3$ Cu a Si thin film deposited by r.f sputtering as an anode for Li free battery were evaluated. The Cu foil current collectors were lied in and out of plasma during sputtering process. The X-ray diffraction results indicated that the as-deposited Si and $Li_{0.5}La_{0.5}TiO_3$ thin films in and out of plasma did not show any crystalline difference. The $Li_{0.5}La_{0.5}TiO_3$ film in plasma and Si film out of plasma showed better cyclability since crystalline $Li_{0.5}La_{0.5}TiO_3$ has much higher ionic conductivity and crystalline Si film is much sensitive far volume change during charge-discharge process. These results suggested that the deposition of amorphous Si on Cu foil current collector is much better for fabrication of Li free battery and it can be useful for the unique battery with a cycling number constraint of below 10.

Effect of Oxidation-reduction Pretreatment for the Hydrogenation of Caster Oil over Ni/SiO2 Catalyst (산화-환원 전처리에 따른 Ni/SiO2 촉매의 캐스터오일 수소화)

  • Choi, Yi Sun;Kim, Soo Young;Koh, Hyoung Lim
    • Applied Chemistry for Engineering
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    • v.28 no.3
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    • pp.326-331
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    • 2017
  • Castor oil can be used as a useful raw material for chemical industries such as intermediates of surfactants through hydrogenation reaction. In this study, effects of the preparation method and pretreatment condition on the nickel catalyst for the hydrogenation of castor oil were investigated. The nickel catalyst was supported on the silica carrier by the precipitation method with different Ni contents, solution pH values, and precipitants. Repeated pretreatments of oxidation and reduction cycles were then carried out. The activity of the nickel catalyst was measured by comparing the iodine value of the castor oil. The dispersion of nickel on the catalyst was analyzed by X-ray diffraction (XRD), $N_2$ adsorption-desorption, and transmission electron microscopy (TEM). The activity of nickel catalyst was also compared by CO oxidation experiments. The redispersion of nickel occurred on the silica by repeated oxidation and reduction cycles, and this effect contributed to promoting the castor oil hydrogenation activity.

Color Difference Characterization on Nickel Silicides (니켈실리사이드의 색차분석)

  • Jung Youngsoon;Song Ohsung;Kim Dugjoong;Choi Yongyun;Kim Chongjun
    • Journal of the Korean institute of surface engineering
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    • v.38 no.1
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    • pp.44-48
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    • 2005
  • We prepared nickel silicide layers from p-Si(l00)/SiO₂(2000 Å)/poly-Si(700 Å)/Ni(400 Å) structures, feasible for gates in MOSFETs, by annealing them from 500℃~900℃ for 30 minutes. We measured the color coordination in visible range, cross sectional micro-structure, and surface topology with annealing temperature by an UV-VIS-IR spectrometer, field effect scanning electron microscope(FE-SEM), and scanning probe micro-scope respectively. We conclude that we may identify the nickel silicide by color difference of 0.90 and predict the silicide process reliability by color coordination measurement. The nickel silicide layers showed similar thickness while the columnar grains size and surface roughness increased as annealing temperature increased.

Trace Elements Characterization of PM10 in Seoul Area (서울지역의 PM10 중 미량원소의 특성 평가)

  • 신은상;최민규;영선우;정용삼
    • Journal of Korean Society for Atmospheric Environment
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    • v.18 no.5
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    • pp.363-372
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    • 2002
  • PM$_{10}$ aerosols were collected using low volume air sampler every month intervals from September 1992 to August 1991 in Seoul. These samples were analyzed for 20 trace elements (Al, As, Ba, Br, Ca, Cl, Co, Cr, Fe, K, Mn, Na, Ni, Pb, Sc, Se, Si, Ti, V and Zn) by INAA (instrumental neutron activation analysis), XRF (x-ray fuorescence spectrometer), and ICP (inductively coupled plasma). PM$_{10}$ mass concentrations higher than 70 $\mu$g/m$^3$ were 32% of 60 samples and had significantly higher concentrations in spring and winter than in summer and fall (p-value<0.001). The elements of As, Br, Cl, Ni, Pb, Se, V, and Zn are enriched by factors of 20 to 2,000 relative to their natural abundance in crustal soil. To further identify common sources of pollution-related trace elements, factor analysis was applied to the trace elements concentration data. Major sources that contribute to the atmospheric loading of these elements were found to include fossil fuel combustion, automobile and waste incineration (33.2%), metal processing industry (18.2%), and soil(29.8%).8%).

Thermoelectric/electrical characterization of electrodeposited BixTey thin films (전기도금법에 의해 전착된 BixTey 박막의 전기 및 열전 특성)

  • Yu, In-Jun;Lee, Gyu-Hwan;Kim, Yang-Do;Im, Jae-Hong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.05a
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    • pp.308-308
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    • 2012
  • Electrodeposition of thermoelectric materials, including binary and ternary compounds, have been attracting attentions, because its many advantages including cost-effectiveness, rapid deposition rate, and ease of control their microstructure and crystallinity by adjusting electrodeposition parameters. In this work, $Bi_xTe_y$ films were potentiostatically electrodeposited using Au/Ni(80/20 nm)/Si substrate as the working electrode in solutions consisting of 10mM $TeO_2$ and 1M $HNO_3$ where $Bi(NO_3)_3$ was varied from 2.5 to 10 mM. Prior to electrodeposition potentiostatically, linear sweep voltammograms (LSV) were acquired with a standard three-electrode cell. The $Bi_xTe_y$ films deposited using the electrolyte containing low Bi ions shows p-type conductivity, which might be attributed by the large incorporation of Te phases. Near stoichiometric $Bi_2Te_3$ thin films were obtained from electrolytes containing 5mM $Bi(NO_3)_3$. This film shows the maximum Seebeck coefficient of $-100.3{\pm}12.7{\mu}V/K$. As the increase of Bi ions in electrolytes decreases the Seebeck coefficient and resistivity. The maximum power factor of $336.2{\mu}W/m{\cdot}K^2$ was obtained from the film deposited using the solution of 7.5mM $Bi(NO_3)_3$.

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A Study on PIXE Spectrum Analysis for the Determination of Elemental Contents (원소별 함량결정을 위한 PIXE 스펙트럼 분석에 관한 연구)

  • Jong-Seok OH;;Hae-ILL Bak
    • Nuclear Engineering and Technology
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    • v.22 no.2
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    • pp.101-107
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    • 1990
  • The PIXE (Proton Induced X-ray Emission) method is applied to the quantitative analysis of trace elements in tap water, red wine, urine and old black powder samples. Sample irradiations are performed with a 1.202 MeV proton beam from the SNU 1.5-MV Tandem Van de Graaff accelerator, and measurements of X-ray spectra are made by the Si(Li) spectrometer To increase the sensitivity of analysis tap water is preconcentrated by evaporation method. As an internal standard, Ni powder is mixed with black powder sample and yttrium solution is added to the other samples. The analyses of the PIXE spectra are carried out by using the AXIL (Analytical X-ray Analysis by Iterative Least-squares) computer code, in which the routine for least-squares method is based on the Marquardt algorithm. The elements such as Mg, Al, Si, Ti, Fe and Zn are analyzed at sub-ppm levels in the tap water sample. In the red wine sample prepared without preconcentration. the element Ti is detected in the amount of 3ppm. In conclusion, the PIXE method is proved to be appropriate for the analysis of liquid samples by relative measurements using the internal standard. and is expected to be improved by the use of evaluated X-ray production cross-sections and the development of sample preparation techniques.

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Characteristics and Microstructure of Co/Ni Composite Silicides on Polysilicon Substrates with Annealing Temperature (폴리실리콘 기판 위에 형성된 코발트 니켈 복합실리사이드 박막의 열처리 온도에 따른 물성과 미세구조변화)

  • Kim, Sang-Yeob;Song, Oh-Sung
    • Korean Journal of Materials Research
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    • v.16 no.9
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    • pp.564-570
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    • 2006
  • Silicides have been required to be below 40 nm-thick and to have low contact resistance without agglomeration at high silicidation temperature. We fabricated composite silicide layers on the wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of $700{\sim}1100^{\circ}C$ for 40 seconds. The sheet resistance, surface composition, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a X-ray diffractometer, an Auger electron spectroscopy, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the fast metal diffusion along the silicon grain boundary lead to the poly silicon mixing and inversion. Our results imply that we may consider the serious thermal instability in designing and process for the sub-0.1 um CMOS devices.