• 한국자기학회:학술대회 개요집
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• 한국자기학회 1998년도 추계연구발표회 논문개요집
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• pp.46-47
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• 1998

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 초전도 자성체 연구회
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• pp.50-54
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• 2003

The output characteristics of thin film NiO/NiFe bilayered magnetoresistive device have been measured as a function of the direction of external magnetic field. Each layer was fabricated by rf magnetron sputtering method, and especially, the under layer, NiO, was fabricated under the in-situmagnetic field of about 1000Oe. The magnetoresistive devices were designed with the angle of 45degree between the direction of current of the device pattern and the induces magnetic field in the NiO film layer. The output of the devices had a good linearity when the devices were placed on the external magnetic field perpendicular to induced field direction and also 45 degree with the currenr path direction.

• Journal of Magnetics
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• 제5권1호
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• pp.19-22
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• 2000

The effects of a hard-biased Held on the magnetic and magnetoresistive properties of a crossed spin-valve head are investigated by computer simulation with particular emphasis on the asymmetry of the output signal. The spin-valve considered in this work is NiMn (25 nm)/NiFe (2.5 m)/Cu (3 nm)/NiFe (5.5 m), with a length of 1500 m and a width of 600 nm. A simple model is used where each magnetic layer consists of a single domain, and the magnetoresistance is a function of the angle between the magnetization directions of the two magnetic layers. The ideal crossed spin-valve structure is not realized with the present model and magnetic parameters, but the deviation from ideality is decreased by the hard-biased field. This results in the improvement of the linearity of the output signal with the use of the bias field. The magnetoresistance ratio and magnetoresistive sensitivity, however are reduced. The magnetic properties including the magnetoresistance are found to be strongly affected by magnetostatic interactions, particularly the inter-layer magnetostatic field.

• 한국자기학회지
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• 제19권6호
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• pp.197-202
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• 2009

코닝유리(Corning glass) 기판 위에 이온빔 증착법으로 제작한 버퍼(Ta)/코네틱(Conetic; NiFeCuMo) 박막에 대해 버퍼층에 의존하는 결정성장과 열처리 효과를 조사하였다. 또한 코네틱층을 증착할 때에 인가한 자기장 방향으로 용이축과 곤란축의 자기저항 곡선으로부터 얻은 보자력과 포화자기장값을 버퍼층 유무에 따라 서로 비교하였다. Ta 박막의 두께가 5 nm이고 코네틱 박막의 두께가 50 nm일 때에 보자력은 0.12 Oe으로 작았으며, MH 히스테리시스 곡선에서 얻은 자화율($\chi$)은 1.2 ${\times}\;10^4$으로 우수한 연자성의 특성을 가졌다. 저자기장에 민감한 거대자기저항 스핀밸브(GMR-SV; giant magneoresistance-spin valve)나 자기터널링접합(MTJ; megnetic tunnel junction) 박막구조에서 자유층으로 연자성의 특성이 우수한 코네틱 박막을 사용할 수 있는 가능성을 확인하였다.

• 전기화학회지
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• 제5권1호
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• pp.17-20
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• 2002

다양한 조성의 CoFeNi합금이 chloride bath와 sulfate bath에서 전해도금 되어졌고, 합금의 도금 특성과 자기특성이 관찰되어졌다. CoFeNi합금 박막의 전해도금에 있어서 Fe조성의 증가는 chloride bath에서보다 sulfate bath에서 빠르게 증가하였다. 전류효율은 큰 변화가 보이지 않는 chloride bath와 달리 sulfate bath에서는 $750\%$에서 $50\%$로 큰 폭으로 감소하였다. Co, Fe, Ni조성이 $80\%,\;10\%,\;10\%$되는 CoFeNi합금이 이번 실험에서 가장 우수한 연자성 재료로 평가되었으며, 그때의 Coercivity는 3 Oe이고 높은 squareness값을 보였다

• 한국자기학회지
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• 제19권4호
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• pp.142-146
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• 2009

이온빔 증착법으로 제작한 코닝유리(Corning glass)/Ta(5 nm)/(Permalloy, Conetic)/Ta(5 nm) 박막에 대한 연자성의 특성에 대해 연구하였다. 퍼멀로이(Permalloy; NiFe)층과 코네틱(Conetic; NiFeCuMo)층을 증착하여 인가 자기장 방향에 용이축과 곤란축의 자기저항곡선으로부터 얻은 보자력과 포화자기장에 대해 각각 비교하였다. 두께가 10${\sim}$15 nm인 코네틱 박막의 표면저항값은 퍼멀로이 박막보다 2배 정도 높았으나 보자력과 포화자기장은 1/3배 정도 낮았으며, 자화율은 2${\sim}$3배 정도 높은 초연자성의 특성을 가졌다. 퍼멀로이 박막보다 연자성의 특성이 높은 코네틱 박막을 이용한 스핀밸브나 터널접합의 소자를 개발할 수 있는 가능성을 확인하였다.

• Journal of Magnetics
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• 제11권3호
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• pp.135-138
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• 2006

We studied local anodization on permalloy $(Ni_{80}Fe_{20})$ thin film with an atomic force microscope (AFM), which was performed by applying a voltage between the permalloy sample and conductive AFM tip. Comparing with anodization on Si (100) substrate, nano-structures on the permalloy thin film was fabricated with low processability.In order to improve the processability on the permalloy thin film, we used dot-fabrication method, thatis, a conductive AFM probe was kept at a position on the film during the anodization process.

• 한국전기전자재료학회논문지
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• 제37권2호
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• pp.195-201
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• 2024

The low-temperature deposition of BaNi_(2-x)Co_xFe₁₆O₂₇ thin films with a Ba hexaferrite structure for electromagnetic shielding was studied. The BaNi_(2-x)Co_xFe₁₆O₂₇ thin films produced through the spin spray process were suitable for thin film deposition on a flexible substrate because it crystallized well at low temperature below 90℃. The change in shielding characteristics depending on the Co content of the BaNi_(2-x)Co_xFe₁₆O₂₇ thin film was investigated, and excellent shielding characteristics with S21 of -1 dB were obtained in a wide frequency range of 26~40 GHz when the Co content was 0.4 or more. The purpose of this study is to analyze changes in shielding properties caused by change in Co content in relation to phase changes in BaNi_(2-x)Co_xFe₁₆O₂₇ and obtain basic data for developing excellent flexible electromagnetic wave shielding materials.

• Journal of Magnetics
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• 제5권4호
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• pp.120-123
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• 2000

Co-Ni-Fe-N thin films were fabricated by a $N_2$ reactive rf magnetron sputtering method. The nitrogen partial pressure ($P_{N2}$) was varied in the range 0~10% . As$P_{N2}$ increases in this range, the saturation magnetization $B_s$ linearly decreases from 19.8 kG to 14 kG and the electrical resistivity ($\rho$) increases from 27 to 155 $\mu\Omegacm$. The coercivity $H_c$ exhibits the minimum value at 4% $P_{N2}$. The magnetic anisotropy fields ($H_k$) are in the range of 20$\sim$50 Oe. High frequency characteristics of $(Co_{22.2}Ni_{27.6}Fe_{50.2})_{100-x}N_x$ films are excellent in the range of 3$\sim$5% of $P_{N2}$. In particular, the effective permeability of the film fabricated at 4% $P_{N2}$ is 800, which is maintained up to 600 MHz. This film also shows Bs of 17.5 kG, $H_c$/ of 1.4 Oe, resistivity of 98$\mu\Omegacm$ and $H_k$ of about 25 Oe. Also, the corrosion resistance of $(Co_{22.2}Ni_{27.6}Fe_{50.2})_{100-x}N_x$ films was imp roved with increasing N concentration.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
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• pp.492-499
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• 2000

Co-Ni-Fe-N thin films were fabricated by a N$\sub$2/ reactive rf magnetron sputtering method. The nitrogen partial pressure (P$\sub$N2/) was varied in the range of 0∼10%. As P$\sub$N2/ increases in this range, the saturation magnetization (B$\sub$s/) linearly decreases from 19.8 kG to 14 kG and the electrical resistivity ($\rho$) increased from 27 to 155 ${\mu}$$\Omega$cm. The coercivity (H$\sub$c/) exhibits the minimum value at 4% of P$\sub$N2/. The magnetic anisotropy (H$\sub$k/) are in the range of 20∼50 Oe. High frequency characteristics of (Co$\sub$22.2/Ni$\sub$27.6/Fe$\sub$50.2/)$\sub$100-x/N$\sub$x/ films are excellent in the range of 3∼5% of P$\sub$N2/. Especially the effective permeability of the film fabricated at 4% of P$\sub$N2/ is 800, which is maintained up to 600 MHz. This film also shows Bs of 17.5 kG, H$\sub$c/ of 1.4 Oe, resistivity of 98 $\Omega$cm and H$\sub$k/ of about 25 Oe. Also, the corrosion resistance of (Co$\sub$22.2/Ni$\sub$27.6/Fe$\sub$50.2/)$\sub$100-x/N$\sub$x/ were improved with the increase in N concentration.