• Journal of the Korean institute of surface engineering
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• v.53 no.1
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• pp.1-8
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• 2020

Sulfamate-chloride baths were fabricated to study the properties of the electrodeposited Ni and NiCo thin films. The dependences of current efficiency, deposit composition of Ni and Co, residual stress, surface morphology and microstructure of electrodeposited Ni and NiCo thin films on CoCl₂ concentration in sulfamate-chloride baths were investigated. The current efficiency was measured to be more than about 90%, independent of the changes of CoCl₂ concentration in the baths. Residual stress of Ni and NiCo thin films was increased from about 45 to about 250 MPa with varying CoCl₂ concentration from 0 to 0.210 M CoCl₂ in the baths and then reached to a plateau, about 250 MPa above 0.420 M CoCl₂ concentration. Nodular surface morphologies were observed at most CoCl₂ concentrations in the baths except 0.210 M. NiCo thin film electrodeposited from the bath with 0.210 M CoCl₂ concentration showed an acicular surface morphology. Pure Ni thin film consists of FCC(111), FCC(200), FCC(220), and FCC(311) peaks without any preferred orientation. On the other hand NiCo thin films make up of HCP(100), FCC(111), HCP(101), FCC(200), FCC(220) or HCP(110), FCC(311) or HCP(112) and FCC(222) peaks. It was revealed from the analysis of XRD result that FCC(111) peak at the NiCo thin film electrodeposited from the bath with 0.084 M CoCl₂ concentration can be regarded as the preferred orientation. However the peak of the preferred orientation was changed to FCC(220) or HCP(110) above 0.084 M CoCl₂ concentration in the baths. Then the intensity of FCC(220) or HCP(110) peak was gradually decreased with increasing CoCl₂ concentration further. The crystalline size of pure Ni thin film was observed to be about 53 ㎛ and those of NiCo thin films were in the range of 35~45 ㎛.

• Journal of Information Display
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• v.2 no.2
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• pp.7-12
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• 2001

A viscous Ni solution was coated over amorphous Si thin film for evenly spread of Ni metal source. The Ni s. prepared by dissolving $NiCl_2$ into IN HCI and mixing with propylene glycol. $NiCl_2$ and Ni were deposited on the amorphous film after oven dry and they enabled to obtain a uniform crystallization. The crystallization using the viscous Ni solution was a Ni-silicide mediated process, the same process used with Ni metal layer. The crystallization temperature was lowered to $480^{\circ}C$ by the synergy effect of silicide-mediated crystallization and microwave-induced crystallization. Lateral crystallization was also enhanced such that the velocity of lateral crystallization by microwave annealing became faster than by furnace annealing.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.715-717
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• 2006

$NiCl_2$ vapor was introduced into conventional furnace to conduct vapor-induced crystallization (VIC) process. We made the metal chloride atmosphere by sublimating the $NiCl_2$ compound. The $NiCl_2$ atmosphere enhanced the crystallization of amorphous silicon thin films. As the result, polycrystalline Si film with large grain size and low metal contamination has been obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.173-177
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• 2008

We have developed the transparent passivation layer for top emission organic light emitting diodes using CsCl thin film by the thermal evaporation method. The CsCl film was deposited on the Ca/Ag semitransparent cathode. The optical transmittance of Ca/ Ag/CsCl triple layer is higher than that of Ca/Ag double layer in the visible range. The device with a structure of glass/Ni/2-TNATA/a-NPD/Alq3:C545T/BCP/Alq3/Ca/Ag/CsCl results in higher efficiency than the device without CsCl passivation layer. The device without CsCl thin film shows a current efficiency of 7 cd/A, whereas the device passivated with CsCl layer shows an efficiency of 10 cd/A. This increase of efficiency isresulted from the increased optical extraction by the CsCl passivation layer.

• Journal of the Korean Chemical Society
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• v.65 no.2
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• pp.125-132
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• 2021

An electrochromic nickel oxide thin film was fabricated on a flexible PET/ITO substrate using a nanocrystallite- dispersed coating sol and bar coater. Nanocrystalline NiOx of 3-4 nm crystallite size was first synthesized by base precipitation and thermal conversion. This NiOx nanocrystallite powder was mechanically dispersed in an alcoholic solvent mixed with a silane binder to prepare a coating sol for thin film. This sol method is different from the normal sol-gel method in that it does not require the conversion of precursor by heat treatment. Therefore, this method provides a very facile method to prepare NiOx thin films on any kind of substrate and it can be easily applied to mass production. The electrochromic performance of this NiOx thin film on PET/ITO electrode with a thickness of about 400 nm was investigated in a nonaqueous LiClO4 electrolyte solution by cyclic voltammetric and repeated chronoamperometric measurements in conjunction with spectrophotometry. The visible light modulation of 44% and the colorization efficiency of 41 ㎠/C at 550 nm were obtained at the step potentials of -0.8/+1.2 V vs Ag and a duration of 30 s.

• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.24-34
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• 1997

In this study, two different types of complementary electrochromic devices using amorphous $WO_{3}$ films as a working electrode, $V_{2}O_{5}$ film and NiO film as counter electrodes respectively were investigated. For the devices using amorphous and crystalline $V_{2}O_{5}$ films of $100{\sim}150nm$ thickness with $ITO/WO_{3}/LiClO_{4}-PC/V_{2}O_{5}/ITO$ structure, an optical modulation of $50{\sim}60%$ were obtained at a potential range of $1{\sim}2V$. It has been shown that transmittance and reflectance of light could be electrically controlled by low applied voltage. For the devices with $ITO/WO_{3}/LiClO_{4}-PC/NiO/ITO$ structure in which NiO film was deposited by a RF reactive sputtering, the optical modulation in visible light region (${\lambda}=550nm$) and in near infrared light region (${\lambda}=850nm$) were 25% and 30%, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.208-208
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• 2013

Graphene has emerged as a fascinating material for next-generation nanoelectronics due to its outstanding electronic properties. In particular, graphene-based field effect transistors (GFETs) have been a promising research subject due to their superior response times, which are due to extremely high electron mobility at room temperature. The biggest challenges in GFET applications are control of carrier concentration and opening the bandgap of graphene. To overcome these problems, three approaches to doping graphene have been developed. Here we demonstrate the decoration of Ni nanoparticles (NPs) on graphene films by simple annealing for p-type doping of graphene. Ni NPs/graphene films were fabricated by coating a $NiCl2{\cdot}6H2O$ solution onto graphene followedby annealing. Scanning electron microscopy and atomic force microscopy revealed that high-density, uniformly sized Ni NPs were formed on the graphene films and the density of the Ni NPs increased gradually with increasing $NiCl2{\cdot}6H2O$ concentration. The formation of Ni NPs on graphene films was explained by heat-driven dechlorination and subsequent particlization, as investigated by X-ray photoelectron spectroscopy. The doping effect of Ni NPs onto graphene films was verified by Raman spectroscopy and electrical transport measurements.

• Journal of the Korean institute of surface engineering
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• v.25 no.4
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• pp.189-206
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• 1992

The effect of activation and electroless nickel plating conditions on contact properties was investi-gated for selective electroless nickel plating of Si wafers in order to obtain an optimum condition of con-tact hole filling. According to RCA prosess, p-type silicon (100) surface was cleaned out and activated. The effects of temperature, DMAB concentration, time, and strirring were investigated for activation of p-type Si(100) surface. The optimal activation condition was 0.2M HF, 1mM PdCl2, 2mM EDTA,$ 70^{\circ}C$, and 90sec under ultrasonic vibration. In electroless nickel plating, the effect of temperature, DMAB concentra-tion, pH, and plating time were studied. The optimal plating condition found was 0.10M NiSO4.H2O, 0.11M Citrate, pH 6.8, $60^{\circ}C$, 30minutes. The contact resistance of films was comparatively low. It took 30minutes to obtain 1$\mu\textrm{m}$ thick film with 8mM DMAB concentration. The film surface roughness was improved with decreasing temperature and decreasing pH of the plating solution. The best quality of the film was obtained at the condition of temperature $60^{\circ}C$ and pH 6.0. The micro-vickers hardness of film was about 800Hv. Plating rate of nickel on the hole pattern was slower than that of nickel on the line pattern.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.315-318
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• 2004

We developed a vapor induced crystallization (VIC) process for the first time to obtain high quality polycrystalline Si films by sublimating the mixture of $AlCl_3$ and $NiCl_2$. The VIC process enhanced the crystallization of amorphous silicon thin films. The LPCVD amorphous silicon thin films were completely crystallized after 5 hours at 480 $^{\circ}C$. It is known that needle-like grains with very small width grow in the Ni-metal induced lateral crystallization. In our new method, the width of grains is larger because the grain can also grow perpendicular to the needle growth direction. Also the interface between the merging grain boundaries was coherent. As the results, a polycrystalline film with superior microstructure has been obtained.

• Corrosion Science and Technology
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• v.15 no.1
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• pp.13-17
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• 2016

The aim of this study was to evaluate the use of iron-nickel oxide ($Fe_2O_3$.NiO) nanopowder (FeNi) as an anti-corrosion pigment for a different application. The corrosion protection ability and the mechanism involved was determined using aqueous solution of FeNi prepared in a corrosive solution containing 3.5 wt.% NaCl. Anti-corrosion abilities of aqueous solution were determined using electrochemical impedance spectroscopy (EIS) on line pipe steel (API 5L X-80). The protection mechanism involved the adsorption of metallic cations on the steel surface forming a protective film. Analysis of EIS spectra revealed that corrosion inhibition occurred at low concentration, whereas higher concentration of aqueous solution produced induction behavior.