• Journal of the Korean institute of surface engineering
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• v.32 no.4
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• pp.503-512
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• 1999

The crystal structure and the microstructure of the intermetallic compounds formed in the interface between In solder and Au/Ni/Ti thin films have been investigated by XRD, SEM, and TEM. Indium solder was deposited on the Au/Ni/Ti thin films/Si substrate by evaporation. The heat treatments simulated the flip chip solder joining were performed in RTA system or in furnace. $Auln_2$ phase is formed in all specimens.$ In_{27}$ $Ni_{10}$ and/or $In_{X}$ $Ni_{Y}$ phase are formed in the interface between $Auln_2$ and Ni depending the heat treatment conditions.

• Journal of the Korean institute of surface engineering
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• v.36 no.6
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• pp.430-436
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• 2003

The nanoocrystalline Ni-l5W(at.%) coating electrodeposited on the high carbon steel was oxidized at 700 and $800^{\circ}C$ in air, and the resultant oxidation properties were investigated using XRD, EPMA, TGA and TEM. The oxidation resistance of the coating was not so good that most of the coating was oxidized after oxidation at $800^{\circ}C$ for 5 hrs. The oxidation led to the formation of the outer, thin NiO oxide scale and the inner, porous, rather thick ($NiWO_4$＋NiO) mixed layer containing a bit of $WO_2$. During oxidation, substrate elements such as Fe and Cr diffused outwardly toward the coating, according to the concentration gradient.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.264-268
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• 2015

Cu films were plated in an eco-friendly electroless bath (No-Formaldehyde) on Ni/screen printed Ag pattern/PET substrate. For electroless Cu plating, we used sodium-phosphinate ($NaH_2PO_2{\cdot}H_2O$) as reducing agent instead of Formaldehyde. All processes were carried out in electroless solution of pH 7 to minimize damage to the PET substrate. According to the increase of sodium-phosphinate, the deposition rate, the granule size, and rms roughness of the electroless Cu film increased and the Ni content also increased. The electroless Cu films plated using 0.280 M and 0.575 M solutions of sodium-phosphinate were made with Cu of 94 at.% and 82 at.%, respectively, with Ni and a small amount P. All electroless Cu plated films had typical FCC crystal structures, although the amount of co-deposited Ni changed according to the variation of the sodium-phosphinate contents. From these results, we concluded that a formation of higher purity Cu film without surface damage to the PET is possible by use of sodium-phosphinate at pH 7.

• Journal of the Korean Ceramic Society
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• v.44 no.12
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• pp.733-739
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• 2007

NiO-YSZ anode-supported single cell was prepared by spin-coating YSZ and LSM slurries as electrolyte and cathode, respectively. Dense YSZ electrolyte film was successfully prepared on the porous NiO-YSZ anode substrate by tuning pre-sintering temperature of NiO-YSZ and co-firing temperature. The thickness of YSZ film was controlled by the solid content of slurry and coating cycles. The experimental conditions affecting on the thickness of YSZ film was discussed. Single cells with the active electrode area ${\sim}0.8\;cm^2$ were prepared by spin-coating the cathode layers of LSM-YSZ mixture and LSM consequently as well. The effects of the pre-sintering temperature and thus the microstructure of NiO-YSZ substrate on the current-voltage characteristics of co-fired cell were investigated.

• Journal of the Korean institute of surface engineering
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• v.27 no.2
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• pp.109-117
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• 1994

Effect of ultrasonic agitation on the contact properties was studied in Ni electroless plating and Pd activation. P-type Si bare wafers were used as substrate and DMAB was used as reducing agent due to its good electrical properties, solderability and compatibility to substrate. In activation, high density Pd nuclei of small size were formed during ultra-sonic agitation compared to that of no stirring. In electroless plating, the plating rate was enhanced by 30∼90% by using ultrasonic agitation. In elecrtoless plating, inhibitor is the most effective additives in ultrasonic agitation. In this experi-ment, thiourea was used as inhibitor. The less the amount of the inhibitor, the more ultrasonic agitation efficiency. It is confirmed by SEM that Ni-B films formed by ultrasonic were coarser, less porous, and denser than those of no stirring. In ultrasonic agitation, boron content of the films was more than those of no stirring. In this case, the more DMAB concentration, the higher the temperature, the less pH, the more boron content. Resistivity of the films formed by ultrasonic agitation was higher than that of no strirring. As the content of boron was increased, the resistivity of the films was increased exponentially.

• Journal of Welding and Joining
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• v.25 no.3
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• pp.28-36
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• 2007

A bulk amorphous NiTiZrSiSn powder produced using an inert gas atomization was sprayed by kinetic spraying process that is basically a solid-state deposition process onto a mild steel substrate. They were successfully overlaid onto the mild steel substrate. In order to evaluate the tribological behavior of the kinetic sprayed NiTiZrSiSn BMG (Bulk Metallic Glass) coatings, a partially crystallized coating and a fully crystallized coating were prepared by the isothermal heat treatments. Tribological behaviors were investigated in view of friction coefficient, hardness and amorphous phase fraction of coating layer. Surface morphologies and depth in the wear tracks were observed and measured by scanning electron microscope and alpha-step. From the examination of the scratch wear track microstructure, transition from the ductile like deformation (micro cutting) to the brittle deformation (micro fracturing) in the scratch groove was observed with the increase of the crystallinity.

• Progress in Superconductivity and Cryogenics
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• v.4 no.2
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• pp.21-26
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• 2002

Textured CeO2 buffer layers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition (MOCVD). The degree of texture of deposited $CeO_2$ films was strong1y dependent on the deposition temperature (Td) and oxygen Partial Pressure(PO2). ($\ell$00) textured $CeO_2$ films were well deposited at T=500~52$0^{\circ}C$. PO2=0.90~3.33 Torr. The surface morphology showed that the films consisted of columnar CeO2 films grown from the Ni substrates. The root mean square roughness of CeO$_2$ films estimated by atomic force microscopy(AFM) increased as the deposition temperature(Td) increa- sed. The growth rate of the $CeO_2$ films deposited at T=52$0^{\circ}C$ and PO2=2.30 Torr was 150~200 nm/min that was much faster than that of other Physical deposition methods.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.129-132
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• 2003

Yttria stabilized zirconia (YSZ) buffer layers were deposited by a metal organic chemical vapor deposition (MOCVD) technique using single liquid source for the application of YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) coated conductor. Y:Zr mole ratio was 0.2:0.8, and tetrahydrofuran (THF) was used as a solvent. The (100) single crystal MgO substrate was used for searching deposition condition. Bi-axially oriented CeO$_2$ and NiO films were fabricated on {100}〈001〉 Ni substrate by the same method and used as templates. At a constant working pressure of 10 Torr, the deposition temperatures (660~80$0^{\circ}C$) and oxygen flow rates (100~500 sccm) were changed to find the optimum deposition condition. The best (100) oriented YSZ film on MgO was obtained at 74$0^{\circ}C$ and $O_2$ flow rate of 300 sccm. For YSZ buffer layer with this deposition condition on CeO$_2$/Ni template, full width half maximum (FWHM) values of the in-plane and out-of-plane alignments were 10.6$^{\circ}$ and 9.8$^{\circ}$, respectively. The SEM image of YSZ film on CeO$_2$/Ni showed surface morphologies without microcrack.k.

• Corrosion Science and Technology
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• v.2 no.3
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• pp.155-160
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• 2003

Plasma spraying technique was used to fabricate functionally graded coating (FGC) of NiCrAIY/YSZ 8wt%$Y_2O_3-ZrO_2$ on a Co-base superalloy (HAYNES 188) substrate. Six layers were coated on the substrate for building up compositionally graded architecture. Conventional thermal barrier coating (TBC) of NiCrAIY/SZ with sharp interface was also fabricated. As-coated FGC and TBC samples were exposed at the temperature of $1100^{\circ}C$ for 10, 50, 100 hours in air. Microstructural change of thermally exposed samples was examined. Pores and microcracks were formed in YSZ layer due to evolution of thermal internal stress at high temperature. The amount of pores and microcracks in YSZ layer were increased with increasing exposure time at high temperature. High temperature oxidation of coatings occurred mainly at the NiCrAIY/YSZ interface. In comparison with the case of TBC. the increased area of the NiCrAIY/YSZ interface in FGC is likely to attribute to forming the higher amount of oxides.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.733-737
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• 2008

In this paper, Ni-Co alloy was used to improve thermal stability of Ni Germanide. It was found that uniform germanide is obtained on epitaxial Ge-on-Si substrate by employing Ni-Co alloy. Moreover, neither agglomeration nor penetration is observed during post-germanidation annealing process. The thermal stability of Ni germanide using Ni-Co alloy is improved due to the less agglomeration of Germanide. Therefore, the proposed Ni-Co alloy is promising for highly thermal immune Ni germanide for nano scale Ge-MOSFETs technology.