• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.166-166
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• 2013

Mesoporous $SiO_2$-supported Ni catalysts (Ni/$SiO_2$ and Ni/$TiO_2$/$SiO_2$) were fabricated by atomic layer deposition (ALD), and their catalytic activity and stability were investigated in carbon dioxide reforming of methane (CRM) reaction at $800^{\circ}C$ The Ni/$SiO_2$ catalysts showed high stability as a result of confinement of Ni particles with a mean size of ~10 nm within the pores of $SiO_2$ support. Besides, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and transmission electron microscopy (TEM) results showed that the Ni nanoparticles were partially buried inside the $SiO_2$ support. The strong interaction between Ni and the $SiO_2$ support could also be advantageous for long-term stability of the catalyst. In case of the Ni/$TiO_2$/$SiO_2$ catalyst, it was found that the catalytic activity of 10 nm-sized Ni nanoparticles was not much influenced by $TiO_2$ addition.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.81-85
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• 2004

Nanoporous materials with nanometer-sized pores, are of great interest in the various applications such as selective adsorbents, heterogeneous catalysts and catalyst supports because of their high porosity, surface area, and size selective adsorption properties. This study is aimed to prepare nanoporous catalytic materials on the basis of two-dimersional clay by pillaring of $SiO_2$ sol particles. $SiO_2$ Pillared Montmorillonite (Si-PILM) was prepared by ion exchanging the interlayer $Ni^{2+}$ ions of clay with $SiO_2$ nano-sized particles of which the surface was modified with nicked polyhydroxy cations sach as $Ni_4(OH)_4^{4+}$. Nano-sized $SiO_2$ particles were formed by the controlled hydrolysis of tetraethyl orthosilicate (TEOS). Upon pillaring of $Ni^+$-modified $SiO_2$ nano particles between the clay layers, the basal spacing was expanded largely to $45{\AA}$ and the extremely large specific surface area ($S_{BET}$) of $760m^2/g$ was obtained.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.2
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• pp.195-200
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• 2007

We fabricated thermally-evaporated 10 nm-Ni/70 w-Poly-Si/200 $nm-SiO_2/Si$ and $10nm-Ni_{0.5}Co_{0.5}/70$ nm-Poly-Si/200 $nm-SiO_2/Si$ structures to investigate the microstructure of nickel monosilicide at the elevated temperatures required fur annealing. Silicides underwent rapid anneal at the temperatures of $600{\sim}1100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process formed on top of the polycrystalline silicon substrate mimicking the gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope and an Auger depth profile scope were employed for the determination of cross sectional microstructure and thickness. 20nm thick nickel cobalt composite silicides on polycrystalline silicon showed low resistance up to $900^{\circ}C$, while the conventional nickle silicide showed low resistance below $900^{\circ}C$. Through TEM analysis, we confirmed that the 70nm-thick nickel cobalt composite silicide showed a unique silicon-silicide mixing at the high silicidation temperature of $1000^{\circ}C$. We identified $Ni_3Si_2,\;CoSi_2$ phase at $700^{\circ}C$ using an X-ray diffractometer. Auger depth profile analysis also supports the presence of this mixed microstructure. Our result implies that our newly proposed NiCo composite silicide from NiCo alloy films process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

• Korean Journal of Metals and Materials
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• v.46 no.2
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• pp.69-79
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• 2008

A composition consisting of 10 nm-Ni/1 nm-Pd/(30 nm or 70 nm-poly)Si was thermally annealed using rapid thermal for 40 seconds at $300{\sim}1100^{\circ}C$ to improve the thermal stability of conventional nickel monosilicide. The annealed bilayer structure developed into $Ni(Pd)Si_x$, and the resulting changes in sheet resistance, microstructure, phase, chemical composition, and surface roughness were investigated. The silicide, which formed on single crystal silicon, could defer the transformation of $NiSi_2$, and was stable at temperatures up to $1100^{\circ}C$. It remained unchanged on polysilicon substrate compared with the sheet resistance of conventional nickel silicide. The silicides annealed at $700^{\circ}C$, formed on single crystal silicon and 30 nm polysilicon substrates exhibited 30 nm-thick uniform silicide layers. However, silicide annealed at $1,000^{\circ}C$ showed preferred and agglomerated phase. The high resistance was due to the agglomerated and mixed microstructures. Through X-ray diffraction analysis, the silicide formed on single crystal silicon and 30 nm polysilicon substrate, showed NiSi phase on the entire temperature range and mixed phases of NiSi and $NiSi_2$ on 70 nm polysilicon substrate. Through scanning probe microscope (SPM) analysis, we confirmed that the surface roughness increased abruptly until 36 nm on 30 nm polysilicon substrate while not changed on single crystal and 70 nm polysilicon substrates. The Pd-inserted nickel monosilicide could maintain low resistance in a wide temperature range and is considered suitable for nano-thick silicide processing.

• Journal of Welding and Joining
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• v.30 no.6
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• pp.106-112
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• 2012

This study was carried out to investigate the effect of bonding temperature and holding time on microstructure and mechanical properties in brazing joints of Ni-base superalloy using MBF-30 (Ni-4.5Si-3.2B [wt.%]). The heating rate was $20^{\circ}C$/min to the bonding temperatures $1050^{\circ}C$, $1070^{\circ}C$, $1090^{\circ}C$ under high vacuum condition. The holding times were 100s, 400s, 900s and 1600s. $Ni_3B$ phases and proeutectic Ni were observed in the interlayer of Ni-201. Then, Ni3B and Ni3Si were found in the middle region of brazing joint. Cr-boride phase appeared in the interlayer of Inconel-625. Tensile strength and elongation were decreased at $1050^{\circ}C$-1600s, $1070^{\circ}C$-900s and $1090^{\circ}C$-400s. After observation the fracture specimens, There was Ni3B which is very brittle phase in the grain boundary of Ni201.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.6
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• pp.520-526
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• 2007

In order to acquire fundamental informations to fabricate high precision thin film resistors, NiCr/NiCrSi alloy films were prepared using Ni and Cr targets. Effect of composition on the electrical properties of the NiCr/NiCrSi alloy film were then investigated. Considering the effect of Si doping on the electrical and material characteristics, the lower TCR (temperature coefficient of resistance) values could be achieved for samples with Ni/Cr ratio of $0.8{\sim}1.5$ (in a range of relative higher specific resistivity and Cr composition of $40\;wt%{\sim}55\;wt%$) and with Si doping. Consequently, the sample prepared using a DC power showed a good TCR of $-25\;ppm/^{\circ}C$, which implies that increase of specific resistivity and decrease of TCR would be achieved more efficiently not for Ni-Cr binary material but for Si doped Ni-Cr ternary material, and not using RF power but using DC power in the sputtering process.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.163-163
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• 1997

• Journal of the Korean institute of surface engineering
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• v.22 no.2
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• pp.69-77
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• 1989

Codeposion of inert particles particles in a metallic mateix by electroless plating process involves two phenomena. Firstly, the adsorption of inercles and secondly, the adsorption of inert particles on the cathode. In the present paper the first adsorption phenomenon and in the next paper the second ane are studied in greaterdetail for the Ni-SiCc, Ni-Al2AO3 and Ni-WC systems. Measurements of the Zeta potentials for the SiC and Al2AO3 particles have been in different electrolyte solutions and the ionic species adsorbed on the Particles studied. The addition of sodium acetate, trisodium citrate and sodium phosphinate to nikel sulface sruomotes the zeta potential of SiC and Al2O3 particles, but zeta phosphinate to nickel is more positive than Al2O3 particles although the amount of nickel ion adsorbrd on the Al2O3 particles become greater than that of SiC particles. It is suggested that this is due to adsortion of Na ion onto the surface SiC particles.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.571-577
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• 2006

We fabricated thermal evaporated 10 nm-Ni/(poly)Si and 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the thermal stability of nickel monosilicide at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides for salicide process was formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester is used for sheet resistance. Scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An x-ray diffractometer and an auger depth profile scope were used for phase and composition analysis, respectively. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1200^{\circ}C$ and $800^{\circ}C$, respectively, while the conventional nickel monosilicide showed low resistance below $700^{\circ}C$. The grain boundary diffusion and agglomeration of silicides led to lower the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.

• Journal of Korea Foundry Society
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• v.15 no.4
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• pp.360-367
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• 1995

Effects of metal coating treatment on SiC particle on wetting behavior and interfacial strength were studied. Experimental variables are included types of coated metallic films such as Cu and Ni-P, and temperatures of heat-treatment under vacuum. The experimental results concerning wetting phenomena of liquid Al on SiC, showed that coating treatment of metallic film on SiC particles remarkably improves the wetting behavior of liquid Al on SiC, especially in the case of Ni-P coating. The interfacial strength of Al/SiC composites made of coated SiC plate was higher than that of the composite with non-coated SiC plate although the coating treatment was not perfect.