• 센서학회지
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• 제1권1호
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• pp.23-34
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• 1992

자기-저항 센서를 제작하기 위하여 Fe-Ni 합금과 Co-Ni 합금을 슬라이드 그라스와 Si wafer에 진공 증착하여 sensor element를 제작한 후 포화자속밀도($B_{s}$), 보자력($H_{c}$), 자기-저항 변화율 등을 조사하였다. 진공 증착된 Fe-Ni 합금 박막의 포화자속밀도는 0.65T이었으며 자화주파수 1 kHz에서 보자력은 0.379A/cm이었고 자냉처리 후 종방향 보자력은 0.370Acm(//), 횡방향 보자력은 0.390Acm(${\bot}$)로 변화되었다. 자기-저항 변화율은 박막의 산화로 인하여 매우 불안정하였다. 진공 증착된 Co-Ni 박막의 포화자속밀도는 0.66T이었으며 자냉처리 후의 종방향 보자력은 5.895Acm(//)이었고 횡방향 보자력은 5.898A/cm(${\bot}$)이었다. 한편 자기-저항 변화율(${\Delta}R/R$)은 $3.6{\sim}3.7%$로써 실온에서 매우 안정하였다. Fe-Ni 박막은 화학친화력이 강하여 자기-저항 센서 제조 공정에서 많은 문제점을 야기시키고 있으나, Co-Ni 박막은 화학친화력이 작고 자기-저항 효과가 뚜렷하여 고온용 자기-저항 소자 개발용 재료로 매우 적합할 것으로 사료된다.

• Journal of Magnetics
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• 제5권2호
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• pp.44-49
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• 2000

Computer simulation of sensing current effects on the magnetic and magnetoresistance properties of a crossed spin-valve head is carried out. The spin-valve head has the following layer structure: Ta (8.0 nm)/NiMn (25 nm)/NiFe (2.5 nm)/Cu (3.0 nm)/NiFe (5.5 nm)/Ta (3.0 nm), and it is 1500 nm long and 600 nm wide. Even with a high pinning field of 300 Oe and a high hard-biased field of 50 Oe, the ideal crossed spin-valve structure, which is essential to the symmetry of the output signal and hence high density recording, is not realized mainly due to large interlayer magnetostatic interactions. This problem is solved by applying a suitable magnitude of sensing currents along the length direction generating magnetic fields in the width direction. The ideal spin-valve head is expected to show good symmetry of the output signal. This has not been shown explicitly in the present simulation, however, The reason for this is possibly related to the simple assumption used in this calculation that each magnetic layer consists of a single domain.

• Journal of Magnetics
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• 제17권2호
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• pp.78-82
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• 2012

CoNiFe(CNF)/$BaTiO_3(BTO)$/CoNiFe(CNF) multilayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using pulsed laser deposition (PLD) system. We fabricated three different thin films of BTO, BTO/CNF and CNF/BTO/CNF for magneto-capacitor and studied their crystalline structure, surface and interface morphology, and magnetic and electrical properties. When three different structures of multilayered thin film were compared, magnetization of CNF/BTO/CNF thin films was decreased by magnetic and dielectric interaction. Also we confirmed that capacitance of CNF/BTO/CNF multilayered thin film was enhanced as being near tetragonal structure with increasing of c/a ratio because of atomic bonding at interface between BTO dielectric and CNF magnetic materials. Finally, we studied the change of the capacitance of CNF/BTO/CNF multilayered thin film with magnetic field for emergence of magnetocapacitance and suggested a possibility of enhanced capacitance.

• 한국표면공학회지
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• 제15권1호
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• pp.11-18
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• 1982

80% Ni-Permalloy is soft magnetic material with high initial permeability and low magnetic coercive force Hc, and is used to computer memory cores and minirelays of communication e-ngineering. In this paper 80 Permalloy thin film on copper cathode was alloy-deposited from Watts so-lution contatining FeSO4$.$7H2O. The amount of FeSO4$.$7H2O in the solution, pH, temperature of the solution and plating current density were varied as parameters and the resulting comp-osition changes of deposited film were analyzed electrochemically with respect to the parame-ters. From the above procedure electroplating conditions for deposition of 80 Permalloy were est-ablished as following: 17-21 g/$\ell$ of FeSO4$.$7H2O in Watts solution, current density 1.0-2.0 Amp/dm2, pH 2.5-3.0 and temperature range of 50-60$^{\circ}C$.

• Journal of Magnetics
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• 제2권2호
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• pp.50-54
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• 1997

The vacuum-annealed Ni80Fe20/Ag discontinuous multilayers were found to show giant magnetoresistive behaviors comparable to those of corresponding multilayers annealed at atmospheric pressure in a mixture of H2 and Ar. This vacuum-annealing process will offer potential advantages, enabling a continuous batch process from the deposition to the annealing. Their giant magnetoresistive behaviors were attributed to the magnetostatic coupling that are induced at the edges of the discontinuous magnetic grains. We also present our results about the multilayer patterned into a basic device for the magnetic field sensor.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1992년도 추계연구발표회 논문개요집
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• pp.34-35
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• 1992

• 한국자기학회지
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• 제5권5호
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• pp.570-574
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• 1995

Magnetoresistance of NiFeCo/Cu/NiFeCo/FeMn uncoupled exchange biased sandwiches has been studied. The magnetoresistance change ratio, ${\Delta}R/R_{s}$ showed 4.1 % at a saturation field as low as 11 Oe in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(23\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. In this system, the magnetoresistance was affected by interlayer material and thickness. When Ti and Cu were used as the interlayer material in this structure, maximum magnetoresistance change ratio were 0.32 % and 4.1 %, respectively. 6.1 % MR ratio was obtained in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(15\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. The magnetoresistance change ratio decreased monotonically as the interlayer thickness increased. It was found that the exchange bias field exerted by FeMn layer to the adjacent NiFeCo layer was ~25 Oe, far smaller than that reported in NiFe/Cu/NiFe/FeMn spin valve structure(Dieny et. al., ~400 Oe). The relationship between the film texture and exchange anisotropy ha been examined for spin valve structures with Ti, Cu, or non-buffer layer.

• 한국자기학회지
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• 제3권4호
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• pp.293-297
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• 1993

자기 저항 헤드용 자기 교환 결합 $NiFe/TbCo/Sio_{2}$ 박막을 RF diode 스퍼터링 방법을 이용하여 제조하고, 그 자기적 특성을 측정하였다. TbCo 박막은 Co 타겟 위에 Tb 조각을 부착한 복합 타겟을 사용하였다. 30%의 Tb 면적을 갖는 타겟으로 제조된 NiFe($400\AA$)/TbCo($1500\AA$)/$SiO_{2}$($500\AA$) 시편은 기판 바이어스를 인가하지 않았을 때 25 Oe, 기판 바이어스-55 V를 인가했을 때 12 Oe의 교환자장을 나타냈다. 기판 바이어스 -55 V 이하에서 유효 수평 보자력으 TbCo 층의 수직 보자력에 거의 비례하였고, 28%의 Tb 면적비를 갖는 시편에서도 같은 경향을 나타내었다. 그러나, 교환 자장은 기판 바이어스가 인가되지 않은 경우에 4 Oe로, -55 V에서 7 Oe로 각각 감소하 였다. 1000 W, Tb 면적비 36%에서 증착된 시편에서 100 Oe 정도의 교환 자장을 얻었으며, 보자력은 3 Oe로 작았다. 그리고, NiFe의 두께가 두꺼워짐에 따라 교환 자장의 크기가 감소하였다.

• Journal of Magnetics
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• 제11권2호
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• pp.77-82
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• 2006

The structure and magnetic properties of Fe-Ni films, deposited by DC magnetron sputtering on Si(111) wafer, have been studied. The spin wave stiffness constant is determined by Brillouin light scattering (BLS) and compared with the value obtained from magnetization measurements. The range of exchange interaction was determined as 0.4 atomic distances in the film deposited in a bias magnetic field, which is 1/2 that in the film grown in no bias magnetic field. The results show that the dimensions of exchange coupling increased by the sputtering in the magnetic field.

• 한국자기학회지
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• 제10권5호
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• pp.196-202
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• 2000

FeMn에 의해 교환 바이어스된 Synthetic antiferromagnet(CoFe/Ru/CoFe)을 가진 Top Ta/NiFe/CoFe/Cu/CoFe/Ru/CoFe/FeMm/Ta 스핀밸브 구조를 마그네트론 스퍼터링 법으로 제조하여 유효 교환이방성 및 자기저항 특성을 조사하였다. FeMn 반강자성층의 두께가 100$\AA$정도일 때 자기저항비와 유효 교환바이어스 자장이 최대값을 나타내었으며, 100 $\AA$ 이상 두께 증가시 FeMn층을 통한 션팅 전류에 의한 자기저항 효율의 저하로 자기저항이 점점 감소하였다. 자유층의 두께가 40 $\AA$일 때 7.5% 이상의 최대 자기저항비가 얻어졌으며, 자유층의 두께 감소에 따라 자기저항비는 감소하였다. Synthetic antiferrormagnet 구조에서 Cu층에 인접한 CoFe(Pl)층의 두께를 증가시키고 FeMn층에 인접한 CoFe(P2)층의 두께를 감소시켜 그 두께 차이가 증가할수록 자기저항비는 증가하였고 반면 유효 교환 바이어스 자장은 감소하였다. 자기저항특성의 증가는 Pl층 두께 증가로 인한 스핀의존산란 효율의 증가로 이해되었으며, 유효 교환 바이어스 자장의 감소는 최소에너지 모델의 이론적 계산을 통해 감소경향을 검증할 수 있었다.