• 한국전기전자재료학회논문지
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• 제18권8호
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• pp.714-719
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• 2005

NiCr thin film was deposited by DC magnetron sputtering on $A;_2O_3$/Si substrate with NiCr (80:20) alloy target. NiCr thin films were annealed at $300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C,\;600^{\circ}C,\;and\;700^{\circ}C$ for 6 hr in $H_2$ after annealing at $500^{\circ}C$ for 6hr in air atmosphere, respectively. To analyze NiCr thin film properties, the changes of its micro structure were Investigated through field emission scanning electron microscope (FESEM). X-ray photoelectron spectroscopy (XPS) was used to analyze a surface of NiCr thin film. Resistance of NiCr thin film was measured by 4-point probe technique. The generated heats were measured by infrared thermometer through the application of DC voltage (5 V/l2 V). NiCr thin film treated by gradational double annealing process had uniform and small grains. Maximum temperature generated heat by NiCr micro heater was $173^{\circ}C$. We expect that our results will be a useful reference in the realization of NiCr micro heater.

• 한국전기전자재료학회논문지
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• 제20권6호
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• pp.520-526
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• 2007

In order to acquire fundamental informations to fabricate high precision thin film resistors, NiCr/NiCrSi alloy films were prepared using Ni and Cr targets. Effect of composition on the electrical properties of the NiCr/NiCrSi alloy film were then investigated. Considering the effect of Si doping on the electrical and material characteristics, the lower TCR (temperature coefficient of resistance) values could be achieved for samples with Ni/Cr ratio of $0.8{\sim}1.5$ (in a range of relative higher specific resistivity and Cr composition of $40\;wt%{\sim}55\;wt%$) and with Si doping. Consequently, the sample prepared using a DC power showed a good TCR of $-25\;ppm/^{\circ}C$, which implies that increase of specific resistivity and decrease of TCR would be achieved more efficiently not for Ni-Cr binary material but for Si doped Ni-Cr ternary material, and not using RF power but using DC power in the sputtering process.

• 전기화학회지
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• 제12권3호
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• pp.258-262
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• 2009

The composition and semiconducting properties of the passive films formed on Ni- (15, 30)Cr-5Mo alloys in pH 8.5 buffer solution were examined. The depth concentration profile of passive films formed on Ni-(15, 30)Cr-5Mo in pH 8.5 buffer solution showed that Mo enhances the enrichment of Cr. The Mott-Schottky plot for the passive film on Ni-(15, 30)Cr- 5Mo closely resembled that for the film on Cr, whereas those for the less Cr-enriched film on Mo-free alloys showed similar behavior to that for the film on Ni. The acceptor density was reduced by increasing Cr content in Ni-(15, 30)Cr-(0, 5)Mo alloys, but addition of Mo considerably increased the acceptor density.

• 한국자기학회지
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• 제7권4호
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• pp.205-211
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• 1997

E-Beam Evaporator로 제조된 CoCrTa/CrNi 자성박막에서 하지층인 Cr에 대한 소량첨가원소인 Ni이 자성박막의 자기적 성질에 어떤 영향을 미치는가를 조사하였다. 상온에서 제조된 시편에서 소량의 첨가원소 Ni의 영향은 보자력의 증가를 가져왔음을 알 수 있었다. 이러한 보자력 증가의 원인을 XRD와 AFM으로 그 결정배향성과 미세구조를 통하여 살펴보았다. Cr 하지층에 Ni의 첨가시 결정립의 크기가 증가함을 알 수 있었다. 280 .deg. C 기판온도에서는 CrNi 하지층을 갖는 박막이 오히려 낮은 보자력 값을 나타내었고 이것은 결정립 크기의 증가때문으로 생각된다. 높은 기판온도에서는 결정배향성보다 Cr의 편석이 보자력에 대한 주요한 기구인 것으로 생각된다.

• 한국재료학회지
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• 제28권10호
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• pp.595-600
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• 2018

This study investigates the microstructural properties of CoCrFeMnNi high entropy alloy (HEA) oxynitride thin film. The HEA oxynitride thin film is grown by the magnetron sputtering method using nitrogen and oxygen gases. The grown CoCrFeMnNi HEA film shows a microstructure with nanocrystalline regions of 5~20 nm in the amorphous region, which is confirmed by high-resolution transmission electron microscopy (HR-TEM). From the TEM electron diffraction pattern analysis crystal structure is determined to be a face centered cubic (FCC) structure with a lattice constant of 0.491 nm, which is larger than that of CoCrFeMnNi HEA. The HEA oxynitride film shows a single phase in which constituting elements are distributed homogeneously as confirmed by element mapping using a Cs-corrected scanning TEM (STEM). Mechanical properties of the CoCrFeMnNi HEA oxynitride thin film are addressed by a nano indentation method, and a hardness of 8.13 GPa and a Young's modulus of 157.3 GPa are obtained. The observed high hardness value is thought to be the result of hardening due to the nanocrystalline microstructure.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1399-1401
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• 2001

We studied on structure and resistivity, temperature coefficient of resistance (TCR) of NiCr and NiCr-N thin resistor films prepared by do reactive magnetron sputtering of NiCr target. It is found that while pure NiCr films are polycrystalline, an addition of nitrogen (N2/(Ar+N2) ratios are between 10% and 70%) into the film is changed into amorphous structure and sheet resistance of films is increased. Measurement temperatures of TCR are ratios of $5^{\circ}C$ per 15min from $25^{\circ}C$ to $130^{\circ}C$. TCR for an as-deposited NiCr-N thin film is varied from positive to negative.

• 한국자기학회지
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• 제3권3호
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• pp.215-220
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• 1993

RF/DC 스퍼터된 $Co_{69.0}Ni_{18.5}Cr_{12.5}/Cr$ 이중박막의 미세구조와 자기적 성질과의 관계를 조사하였다. Cr 하지층과 CoNiCr 자성층의 두께는 각각 50-200 nm와 10-50 nm였으며, 기판 의 온도는 $100-200^{\circ}C$로 하였다. 기판의 온도, Cr 하지층 두께가 증가함에 따라 결정립은 미세해졌으며 보자력은 증가하였다. 기판의 온도가 $100^{\circ}C$에서 $200^{\circ}C$로 증가함에 따라 Cr(200), CoNiCr(1120) 결정방위가 강하게 나타났다. CoNiCr/Cr 이중박막의 보자력은 CoNiCr(1120) 결정방위 증가와 결정립의 미세 화에 따라 증가한다. 높은 보자력을 나타내는 박막에서 Cr 하지층위에 자성층의 epitaxial growth를 확인하였다.

• 한국전기전자재료학회논문지
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• 제14권4호
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• pp.328-335
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• 2001

In this work, we made the precision thin film resistors of NiCr alloy (74wt%Ni-f18wt%Cr-4wt%Al-4wt%Cu) using DC/RF magnetron sputtering method and studied the sheet resistance and TCR(Temperature Coefficient of Resistance) etc... of the Ni-Cr-Al-Cu alloy thin film according to the change by annealing treatment to 400$\^{C}$ in air and nitrogen atmosphere and the change(power, pressure, substrate temperature) of sputtering process.

• 대한화학회지
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• 제56권4호
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• pp.448-458
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• 2012

In order to develop alloy resistance in aggressive sulphat ion, the corrosion behavior of metallic glasses $Ni_{92{\cdot}3}Si_{4.5}B_{32}$, $Ni_{82,3}Cr_7Fe_3Si_{4.5}B_{3.2}$ and $Ni_{75.5}Cr_{13}Fe_{4.2}Si_{4.5}B_{2.8}$ (at %) at different concentrations of $H_2SO_4$ solutions was examined by electrochemical methods and Scanning Electron Microscope (SEM) and X-ray Photoelectron Microscopy (XPS) analyses. The corrosion kinetics and passivation behavior was studied. A direct proportion was observed between the corrosion rate and acid concentration in the case of $Ni_{92{\cdot}3}Si_{4.5}B_{32}$ and $Ni_{75.5}Cr_{13}Fe_{4.2}Si_{4.5}B_{2.8}$ alloys. Critical concentration was observed in the case of $Ni_{82,3}Cr_7Fe_3Si_{4.5}B_{3.2}$ alloy. The influence of the alloying element is reflected in the increasing resistance of the protective film. XPS analysis confirms that the protection film on the $Ni_{92{\cdot}3}Si_{4.5}B_{32}$ alloy was NiS which is less protective than that formed on Cr containing alloys. The corrosion rate of $Ni_{82,3}Cr_7Fe_3Si_{4.5}B_{3.2}$ and $Ni_{75.5}Cr_{13}Fe_{4.2}Si_{4.5}B_{2.8}$. alloys containing 7% and 13% Cr are $7.90-26.1{\times}10^{-3}$ mm/y which is lower about 43-54 times of the alloy $Ni_{92{\cdot}3}Si_{4.5}B_{32}$ (free of Cr). The high resistance of $Ni_{75.5}Cr_{13}Fe_{4.2}Si_{4.5}B_{2.8}$ alloy at the very aggressive media may due to thicker passive film of $Cr_2O_3$ which hydrated to hydrated chromium oxyhydroxide.

• Journal of Electrical Engineering and Technology
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• 제2권4호
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.