• 한국재료학회지
• /
• 제13권4호
• /
• pp.233-238
• /
• 2003

Ferromagnetic tunnel junctions, Ta/Cu/Ta/NiFe/Cu/$Mn_{75}$ $Ir_{25}$ $Co_{70}$ $Fe_{30}$/Al-oxide, were fabricated by do magnetron sputtering and plasma oxidation process. The effect of annealing temperature on the local transport properties of the ferromagnetic tunnel junctions was studied using contact-mode Atomic Force Microscopy (AFM). The current images reflected the distribution of the barrier height determined by local I-V analysis. The contrast of the current image became more homogeneous and smooth after annealing at $280^{\circ}C$. And the average barrier height $\phi_{ave}$ increased and its standard deviation $\sigma_{\phi}$ X decreased. For the cases of the annealing temperature more than $300^{\circ}C$, the contrast of the current image became large again. And the average barrier height $\phi_{ave}$ decreased and its standard deviation $\sigma_{\phi}$ increased. Also, the current histogram had a long tail in the high current region and became asymmetric. This result means the generation of the leakage current that is resulted from the local generation of a low barrier height region. In order to obtain the high tunnel magnetoresistance(TMR) ratio, the increase of the average barrier height and the decrease of the barrier height fluctuation must be strictly controlled.led.

• Applied Biological Chemistry
• /
• 제35권2호
• /
• pp.82-86
• /
• 1992

복숭아로부터 polyphenoloxidase를 추출하여 polyphenol 화합물인 caffeic acid, hydroxyhydroquinone, homocatechol 그리고 pyrogallol과 반응시켜 얻어진 4종류의 효소적 갈변반응 생성물의 생리작용을 검토한 결과 rec-assay와 돌연변이원성시험에서 돌연변이원성을 나타내지 않았다. 4종류의 시료모두 S-9Mix를 첨가한 돌연변이원성 억제활성 실험에서 B(a)p, Trp-P-1의 변이물질에 대한 Ca-PEBRP와 HCa-PEBRP가 80% 이상의 강한 돌연변이원성 억제활성을 나타내었음을 알 수 있었다. 또한 rec-assay에서도 강한 대조구인 MMC와 MNNG에 대해 Py-PEBRP경우 생육저지대차를 17 mm에서 5 mm로 감소시켜 돌연변이 억제활성이 있는 것으로 나타났고, Hca-PEBRP, HHQ-PEBRP 그리고 Py-PEBRP에 $Zn^{2+}$의 첨가로 생육저지대의 차가 5 mm로써 DNA 손상에 영향을 미치는 것으로 나타났다.

• Korean Chemical Engineering Research
• /
• 제49권6호
• /
• pp.720-725
• /
• 2011

금속질산염과 염화금산을 전구체로 사용하여 다양한 금속산화물($$Al_{2}O_{3}$, ZnO, $Fe_{2}O_{3}$, $Cr_{2}O_{3}$, $MnO_{2}$, CuO, NiO, $Co_{3}O_{4}$)에 담지된 금촉매를 공침법을 이용하여 제조한 후, 일산화탄소 산화반응에서 수분첨가의 영향을 검토하였다. 이들 중 $Co_{3}O_{4}$와 ZnO에 담지된 금촉매가 일산화탄소에 대하여 높은 활성을 보여주었다. 반응가스 중에 수분이 첨가될 때 Au/$Co_{3}O_{4}$ 촉매는 활성이 약간 감소하였으나, Au/ZnO 촉매에서는 활성이 크게 증가하여 수분에 의한 일산화탄소 산화 활성은 담체의 종류에 크게 의존함을 알 수 있었다. 반응가스 중에 포함된 수분에 관계없이 반응 전과 후의 Au(5 wt%)/ZnO 촉매의 금입자 크기는 거의 변하지 않아 활성이 감소되는 이유는 금입자들의 소결에 의한 영향보다는 카보네이트와 같은 화학종에 의해 불활성화가 일어남을 알 수 있었으며, 이 화학종은 수분의 첨가에 의해 이산화탄소로 분해되어 활성이 증가한 것으로 생각된다.

• 한국수소및신에너지학회논문집
• /
• 제27권5호
• /
• pp.554-561
• /
• 2016

Depending on the Bio-gas sources, main component gases of $CH_4$ and $CO_2$ are shown to be variously present in amounts. For the anaerobic digester, The concentration of $CH_4$ and $CO_2$ in the gases are 60~70 and 30~35 vol%. For the landfill gas, $CH_4$ and $CO_2$ are 40~60 and 40~60 vol%. For the food wastes, $CH_4$ and $CO_2$ are 60~80 and 20~40 vol%, respectively. In this study, maximum conversion rates of $CO_2$ were obtained from the variety of concentrations of $CH_4$ and $CO_2$ by the catalysts of reforming reactions. Moreover, in order to get maximum producing amount of synthetic gas, experimental studies were performed to optimize the reaction variables. On the basis of $CH_4$, 243 ml, R [$CH_4/(O2+CO_2)$] value were varied from 0.8 to 1.35, in the study of $CH_4$ and $CO_2$ reforming reactions. It was shown that the optimal results were obtained for 1.35 of R value. And also, at $850^{\circ}C$ and 1 atm, the production rate of synthetic gas was 90% and the conversion rates of $CH_4$ and $CO_2$ were higher than 99% and 90%, respectively.

• 센서학회지
• /
• 제14권2호
• /
• pp.96-100
• /
• 2005

The planar Schottky diodes were fabricated and modeled to probe the device applicability of the cracked GaN epitaxial layer on a (111) silicon substrate. On the unintentionally n-doped GaN grown on silicon, we deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact achieved a minimum contact resistivity of $5.51{\times}10.5{\Omega}{\cdot}cm^{2}$ after annealing in an $N_{2}$ ambient at $700^{\circ}C$ for 30 sec. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideality factor was 2.4, which are significantly lower than those parameters of crack free one. But in photoresponse measurement, the diode showed the peak responsivity of 0.097 A/W at 300 nm, the cutoff at 360 nm, and UV/visible rejection ratio of about $10^{2}$. The SPICE(Simulation Program with Integrated Circuit Emphasis) simulation with a proposed model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.

• 자원환경지질
• /
• 제3권1호
• /
• pp.17-24
• /
• 1970

The purpose of this report is to prepare a data for the economic evaluation on the Goobong Limestone Mine which is located at the south-eastern corner of the Yongchun Quadrangle scaled in 1:50,000. The accessibility from the mine to railroad was considered in two ways. One is to Dodam Station on Central Railway Line and the other is to reach Songjung-ni village which is near Sangyong Station on Hamback Railway Line. The distance of the former way is 26.7km and the later is 24.2km. Geologically the mine is situated near the base of the Greast Limestone Series which strikes generally $N25^{\circ}{\sim}30^{\circ}E$. The series comprises six different formations from older to younger; Pungchon Limestone Formation and Whajol Formation of Cambrian age, and Dongjum Quartzite Formation, Dumudong Formation, Maggol Limestone Formation and Goseong Formation of lower to middle Ordovician age. 82 samples; 48 from Pungchon Limestone Formation, 11 from Dumudong Formation, 15 from Maggol Limestone Formation and 8 from Goseong Formation, were taken from the series in the crossed direction to the general trend of the series as shown in geological map. They were chemically analyzed on the components of CaO, MgO, $SiO_2$, $R_2O_3(Al_2O_3+Fe_2O_3)$ and ignition loss as shown in table 2, table 3, table 4, and table 5. As seen from the tables, among the formations of the series, middle to upper parts of the Pungchon Limestone Formation and middle and upper parts of the Dumudong Formation have chemical composition as available source for the raw material of cement industry, not only that but also the part of the Pungchon Formation was highly evaluated as source for the flux of iron smelting and the raw material of carbide manufacturing because of its high purity of calcium carbonate.

• 한국환경농학회지
• /
• 제34권1호
• /
• pp.64-68
• /
• 2015

BACKGROUND: Heavy metals (Al, As, Cd, Cr, Cu, Li, Hg, Ni, Pb, and Zn) were analyzed to elucidate the impact of weir construction on their concentrations in sediments of Geum River, Korea. We also attempted to investigate the source of the heavy metals in sediments. METHODS AND RESULTS: For this study, sediments were collected from May through June in 2012. The concentrations of heavy metals except Hg were determined by inductively coupled plasma mass spectrometer, and Hg was measured by automatic mercury analyzer. More clay were accumulated in the furthest stations in the upstream direction starting from the weirs. Most of the heavy metals showed higher concentrations in the most upstream located station of Geumnam Weir. However, high concentrations were not observed in the most upstream stations of the other weirs. The concentrations of Hg and As were much higher in sediments of Gap Stream. CONCLUSION: Gap Stream may be a potential source for high deposits of As and Hg. Presence of the dams may not play an important role in controlling heavy metal concentrations in sediments. It is necessary to monitor heavy metal concentrations for a longer time period to study the effect of environmental changes on heavy metal distribution in Geum River.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.206-206
• /
• 2010

정보화 기술이 급속히 발전함에 따라서 보다 많은 양의 data를 전송, 처리, 저장 하게 되면서 이를 처리 할 수 있는 대용량, 고속, 비휘발성의 차세대 메모리의 개발이 요구 되고 있다. 이 중 저항 변화 메모리(ReRAM)는 일반적으로 전이금속산화물을 이용한 MIM 구조로서 적당한 전기 신호를 가하면 저항이 높아서 전도되지 않는 상태(Off state)에서 저항이 낮아져 전도가 가능한 상태(On state)로 바뀌는 메모리 특성을 가진다. ReRAM은 비휘발성 메모리이며 종래의 비휘발성 기억소자인 Flash memory 보다 access time이 $10^5$배 이상 빠르며, 2~5V 이하의 낮은 전압에서 동작이 가능하다. 또한 구조가 간단하여 공정상의 결함을 현저히 줄일 수 있다는 점 등 많은 장점들이 있어서 Flash memory를 대체할 수 있는 유력한 후보로 여겨지고 있다. 저항 변화의 특징을 잘 나타내는 물질에는 $TiO_2$, $Al_2O_3$, $NiO_2$, $HfO_2$, $ZrO_2$등의 많은 전이금속산화물들이 있다. 본 연구에서는 Reactive DC-magnetron Sputtering 방법과 DC-magnetron sputter를 이용하여 Ti를 증착한 후 Oxidation 방법으로 각각 증착한 $TiO_2$박막을 사용하여 저항변화특성을 관찰하였다. $TiO_2$상부에 Atomic Layer Deposition (ALD)를 이용하여 $HfO_2$ 박막을 증착하여 표면처리를 하고, 또한 $TiO_2$에 다른 전이 금속박막 층을 추가 증착하여 저항변화 특성에 접합한 조건을 찾는 연구를 진행하였다. 하부 전극과 상부 전극 물질로는 Si 100 wafer 위에 Pt 또는 TiN을 사용하였다. 저항변화 특성을 평가하기 위해 Agilent E5270B를 이용하여 current-voltage (I-V)를 측정하였다. X-ray Diffraction (XRD)를 이용하여 증착 된 전기금속 박막 물질의 결정성을 관찰했으며, Atomic Force Microscopy (AFM)을 이용하여 증착 된 샘플의 표면을 관찰했다. SEM과 TEM을 통해서는 sample의 미세구조를 확인 하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.285-285
• /
• 2010

$Cu(In,Ga)Se_2$ (CIGS) 박막 태양전지 제조에는 동시증발법 (co-evaporation)으로 Cu, In, Ga, Se 각 원소의 증발을 세 단계로 제어하여 CIGS 박막을 증착하는 3-stage 방법이 널리 이용된다[1]. 3-stage 중 1st-stage에서는 In, Ga, Se 원소 만을 증발시켜 $(In,Ga)_2Se_3$ 전구체 (precursor) 박막을 성장시킨다. 고효율의 CIGS 태양전지를 위해서는 $(In,Ga)_2Se_3$ 전구체 증착의 공정 변수와 이에 따른 박막 특성의 이해가 중요하다. 본 연구에서는 Mo 박막이 증착된 소다석회유리 (soda lime glass) 기판에 동시증발장비를 이용하여 280 380 의 기판 온도에서 In, Ga, Se 물질을 증발시켜 $(In,Ga)_2Se_3$/Mo/glass 시료를 제작하였으며 XRD, SEM, EDS 등의 방법을 이용하여 특성을 분석하였다. XRD 분석 결과 기판 온도 $280{\sim}330^{\circ}C$에서는 $(In,Ga)_2Se_3$ 박막의 (006), (300) 피크가 관찰되었으며, 기판 온도가 증가할수록 (006) 피크 세기는 감소하였고 (300) 피크 세기는 증가하였다. $380^{\circ}C$에서는 (110)을 포함한 다수의 피크가 관찰되었다. 그레인 (grain) 크기는 기판 온도가 증가할수록 커지며 Ga/(In+Ga) 조성비는 기판 온도에 따라 일정함을 각각 SEM과 EDS 측정을 통해 알 수 있었다. $(In,Ga)_2Se_3$ 전구체의 (300) 배향은 CIGS 박막의 (220/204) 배향을 촉진하고[2], 이것은 높은 광전변환효율에 기여하는 것으로 알려져 있다. 때문에 $(In,Ga)_2Se_3$의 (300) 피크의 세기가 가장 큰 조건인 $330^{\circ}C$를 1st-stage 증착 온도로 하여 3-stage CIGS 태양전지 공정을 수행하였으며, $MgF_2$/Al/Ni/ITO/i-ZnO/CdS/CIGS/Mo/glass 구조의 셀에서 광전변환효율 16.96%를 얻었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.77.1-77.1
• /
• 2013

Atomic layer deposition (ALD) is known for its self-limiting reaction, which offers atomic-level controllability of the growth of thin films for a wide range of applications. The self-limiting mechanism leads to very useful properties, such as excellent uniformity over a large area and superior conformality on complex structures. These unique features of ALD provide promising opportunities for future electronics. Although the ALD of Al2O3 film (using trimethyl-aluminum and water as a metal precursor and oxygen source, respectively) can be regarded as a representative example of an ideal ALD based on the completely self-limiting reaction, there are many cases deviating from the ideal ALD reaction in recently developed ALD processes. The nonconventional aspects of the ALD reactions may strongly influence the various properties of the functional materials grown by ALD, and the lack of comprehension of these aspects has made ALD difficult to control. In this respect, several dominant factors that complicate ALD reactions, including the types of metal precursors, non-metal precursors (oxygen sources or reducing agents), and substrates, will be discussed in this presentation. Several functional materials for future electronics, such as higher-k dielectrics (TiO2, SrTiO3) for DRAM application, and resistive switching materials (NiO) for RRAM application, will be addressed in this talk. Unwanted supply of oxygen atoms from the substrate or other component oxide to the incoming precursors during the precursor pulse step, and outward diffusion of substrate atoms to the growing film surface even during the steady-state growth influenced the growth, crystal structure, and properties of the various films.