• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.340-340
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• 2002

In an effort to develop alternative single buffer layer technology for YBa$_2$Cu$_3$O$_{7-{\delta}}$ (YBCO) coated conductors, we have investigated both LaMnO$_3$, (LMO) and La$_2$Zr$_2$O$_{7}$ (LZO) as potential buffer layers. High-quality LMO films were grown directly on textured Ni and Ni-W (3%) substrates using rf magnetron sputtering. Highly textured LZO buffers were grown on textured Ni substrates using sol-gel alkoxide processing route. YBCO films were then grown on both LMO and LZO buffers using pulsed laser deposition. Detailed X-ray studies have shown that YBCO films were grown on both LMO and LZO layers with a single epitaxial orientation. A high J$_{c}$ of over 1 MA/cm$^2$ at 77 K and self-field was obtained on YBCO films grown on both LMO-buffered Ni or Ni-W substrates, and also on LZO-buffered Ni substrates. We have identified LaMnO$_3$ as a good diffusion barrier layer for Ni and it also provides a good template for growing high current density YBCO films. Similarly we have also demonstrated the growth of high J$_{c}$ YBCO films on all solution buffers. We will discuss in detail about our buffer deposition processes. processes.s.s.s.s.

• 한국자기학회지
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• 제8권4호
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• pp.224-230
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• 1998

보자력의 차이를 나타내는 두 자성층으로 구성된 거대자기저항 스핀밸브 삼층박막의 자기저항곡선과 자기이력 곡선을 단층박막으로 형성된 자성층의 자기이력곡선을 이용하여 용이학게 해석되는 방법을 제시하고, 삼층박막의 자기저항 특성과 삼층박막을 이루는 각 자성층의 자기적 특성과의 관계를 고찰하였다. 4$^{\circ}$ 기울어진 Si(111) 기판과 유리 기판 위에 NiFe/Cu/Co 삼층박막을 형성하여 일축자기이방성의 존재 유무에 따른 2가지 경우에 대해, 스핀밸브 삼층박막의 측정된 자기이력 및 자기저항곡선을 단층박막으로 형성된 NiFe, Co의 자기이력곡선으로부터 계산된 곡선과 비교하였다. 거대자기저항을 나타내는 NiFe/Cu/Co 스핀밸브 삼층박막의 자기이력곡선은 동일한 기판 위에 형성된 NiFe, Co 단층박막의 자기이역곡선을 합성한 곡선과 일치하였으며, 자기저항곡선 또한 각 단층박막의 자기이력곡선에 단지이력곡선에 단자구 모델과 다자구 모델을 적용하여 모사된 곡선으로 이해될 수 있었다. 이는 스핀밸브 삼층단막을 다양한 응용 분야에 적용시 각 응용에 필요한 자기저항 특성을 얻는에 유용한 것으로 사료된다.

• Journal of Magnetics
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• 제6권4호
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• pp.145-147
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• 2001

The effect of interface roughness between [Ni/Mn] superlattice and pinned NiFe layer on magnetoresistance (MR) of [Ni/Mn] superlattice-based spin valve films was investigated. Antiferromagnetic phase structure and interface roughness of [Ni/Mn] superlattice spin valve films were compared in the as-deposited and the annealed samples at 240$\^{C}$, respectively. Surface morphology of spin valves was substantially flattened due to the formation of the antiferromatic NiMn phase. In case of Co insertion between Cu and NiFe, the interlace roughness and MR ratio in the annealed [NiMn] superlattice and pinned NiFe/Co layer increased more than those in the annealed [Ni/Mn] superlattice and pinned NiFe layers respectively.

• Journal of Magnetics
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• 제2권4호
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• pp.143-146
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• 1997

The effects of deposition rate on exchange coupling field Hex and coercive field Hc in NiO spin-valves are discussed. The Hex and Hc increased with deposition rate of NiO film. The rms roughnesses of the NiO deposited at 6 ${\AA}$/min (NiO-Low) and 30${\AA}$/min (NiO-High) were almost similar, however, the short-range roughness increased with the deposition rate. The Hex, Hc and surface morphologies for the modulated NiO spin-valve films such as NiO-Low\NiO-High\NiO-Low and NiO-High\NiO-Low were investigated.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.28.1-28.1
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• 2011

We deposited the carbon films on Ni substrates by thermal atomic layer deposition (th-ALD), for the first time, using carbon tetrabromide ($CBr_4$) precursors and H2 reactants at two different temperatures (573 K and 673 K). Morphology of carbon films was characterized by scanning electron microscopy (SEM). The carbon films having amorphous carbon structures were analyzed by X-ray photoemission spectroscopy (XPS) and Raman spectroscopy. As the working temperature was increased from 573 K to 673 K, the intensity of C1s spectra was increased while that of O1s core spectra was reduced. That is, the purity of carbon films containing bromine (Br) atoms was increased. Also, the thin amorphous carbon films (ALD 3 cycle) were transformed to multilayer graphene segregated on Ni layer, through the post-annealing and cooling process.

• 한국재료학회지
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• 제17권12호
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• pp.664-668
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• 2007

The magnetron sputtering was used to deposit Ni buffer layers on the polyimide surfaces to increase the adhesion strength between Cu thin films and polyimide as well as to prevent Cu diffusion into the polyimide. The Ni layer thickness was varied from 100 to $400{\AA}$. The adhesion strength increased rather significantly up to $200{\AA}$ of Ni thickness, however, there was no significant increase in strength over $200{\AA}$. The XPS analysis revealed that Ni thin films could increase the adhesion strength by reacting with the polar C=O bonds on the polyimide surface and also it could prevent Cu diffusion into the polyimide. The Cu/Ni/ polyimide multilayer thin films showed a high stability even at the high heating temperature of $200^{\circ}C$, however, at the temperature of $300^{\circ}C$, Cu diffused through the Ni buffer layer into polyimide, resulting in the drastic decrease in adhesion strength.

• 한국표면공학회지
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• 제44권6호
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• pp.250-254
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• 2011

NiO-AZO films were deposited on glass substrate by DC and RF magnetron co-sputtering system in pure $O_2$ gas without substrate heating during deposition. In order to control the chemical composition of the film, NiO target was supplied with constant RF power of 150 W and AZO target (doped with 2.98 at% aluminum) with DC power varied between 40 W to 80 W. Deposited NiO-AZO films were evaluated by structural and chemical analysis. With introducing AZO, XRD and XPS data reveal that NiO were supplied with more oxygen. these results could be strongly affected by the higher bond enthalpy of NiO compared to ZnO, which makes it possible for NiO to obtain excessive oxygen from ZnO.

• KIEE International Transactions on Electrophysics and Applications
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• 제3C권1호
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• pp.23-27
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• 2003

Structural properties of Cu-Ni alloy films, such as preferred orientation, crystallite size, in-ter-planar spacing, cross-sectional morphology, and electrical resistivity, are investigated in terms of tar-get configurations that are used in the film deposition by means of magnetron co-sputtering. Two different target configurations are considered in this study: a dual-type configuration in which two separate tar-gets (Cu and Ni) and different bias types (RF and DC) are used and a Ni-on-Cu type configuration in which Ni chips are attached to a Cu target. The dual-type configuration appears to have some advantages over the Ni-on-Cu type regarding the accurate control of atomic composition of the deposited Cu-Ni alloy. However, the dual-type-produced film exhibits a porous and columnar structure, the relatively large internal stress, and the high electrical resistivity, which are mainly due to the relatively low mobility of adatoms. The affects of thermal treatment and deposition conditions on the structural and electrical properties of dual-type Cu-Ni films are also discussed.

• 한국전기전자재료학회논문지
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• 제32권2호
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• pp.134-140
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• 2019

Oxide ($SnO_2$)/metal alloy (Cu(Ni))/oxide ($SnO_2$) multilayer films were fabricated using the magnetron sputtering technique. The oxide and metal alloy were $SnO_2$ and Ni-doped Cu, respectively. The structural, optical, and electrical properties of the multilayer films were investigated using X-ray diffraction (XRD), ultraviolet-visible (UV-vis) spectrophotometry, and 4-point probe measurements, respectively. The properties of the $SnO_2/Cu(Ni)/SnO_2$ multilayer films were dependent on the thickness and Ni doping of the mid-layer film. Since Ni atoms inhibit the diffusion and aggregation of Cu atoms, the grain growth of Cu is delayed upon Ni addition. For $250^{\circ}C$, the Haccke's figure of merit (FOM) of the $SnO_2$ (30 nm)/Cu(Ni) (8 nm)/$SnO_2$ (30 nm) multilayer film was evaluated to be $0.17{\times}10^{-3}{\Omega}^{-1}$.

• 한국표면공학회지
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• 제53권1호
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• pp.1-8
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• 2020

Sulfamate-chloride baths were fabricated to study the properties of the electrodeposited Ni and NiCo thin films. The dependences of current efficiency, deposit composition of Ni and Co, residual stress, surface morphology and microstructure of electrodeposited Ni and NiCo thin films on CoCl₂ concentration in sulfamate-chloride baths were investigated. The current efficiency was measured to be more than about 90%, independent of the changes of CoCl₂ concentration in the baths. Residual stress of Ni and NiCo thin films was increased from about 45 to about 250 MPa with varying CoCl₂ concentration from 0 to 0.210 M CoCl₂ in the baths and then reached to a plateau, about 250 MPa above 0.420 M CoCl₂ concentration. Nodular surface morphologies were observed at most CoCl₂ concentrations in the baths except 0.210 M. NiCo thin film electrodeposited from the bath with 0.210 M CoCl₂ concentration showed an acicular surface morphology. Pure Ni thin film consists of FCC(111), FCC(200), FCC(220), and FCC(311) peaks without any preferred orientation. On the other hand NiCo thin films make up of HCP(100), FCC(111), HCP(101), FCC(200), FCC(220) or HCP(110), FCC(311) or HCP(112) and FCC(222) peaks. It was revealed from the analysis of XRD result that FCC(111) peak at the NiCo thin film electrodeposited from the bath with 0.084 M CoCl₂ concentration can be regarded as the preferred orientation. However the peak of the preferred orientation was changed to FCC(220) or HCP(110) above 0.084 M CoCl₂ concentration in the baths. Then the intensity of FCC(220) or HCP(110) peak was gradually decreased with increasing CoCl₂ concentration further. The crystalline size of pure Ni thin film was observed to be about 53 ㎛ and those of NiCo thin films were in the range of 35~45 ㎛.