• Journal of Surface Science and Engineering
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• v.34 no.4
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• pp.321-326
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• 2001

The TiCrN Coatings haying three kinds of Compositions of $Ti_{36}$ $Cr_{26}$ $N_{38}$ , $Ti_{31}$ $Cr_{35}$ $N_{34}$ / and $Ti_{14}$ $Cr_{52}$ $N_{34}$ were deposited on STD 61 steel substrate by arc ion plating and were oxidized between 700 and 100$0^{\circ}C$ to identify the oxide scales formed on the coatings. The oxide scales were then analyzed using EPMA, XRD and GAXRD. During oxidation, the coatings consisting of TiN and CrN phases were reduced to TiO2 and $Cr_2$$O_3$, respectively. Titania tended to form at the outer oxide layer, whereas chromia tended to form at the inner oxide layer, owing to the different oxygen affinity. The substrate elements as well as coating elements diffused outwardly toward the oxide layer due to the concentration gradient. The growth of oxide from the TiCrN coatings was schematically expressed on the basis of thickness measurement of the reacted and unreacted coatings. The Cr element showed its stronger role to keep the TiCrN coatings from oxidation, when compared with Ni.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.565-568
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• 2003

2세대 초전도 선재로 알려져 있는 $YBa_2Cu_3O_{7-\delta}$ coated conductor는 금속모재/완충층/초전도층/보호층의 구조를 가진다. 2개 이상의 산화물 다층 박막으로 이루어진 완충층은 금속기판의 집합조직을 초전도층까지 전달하는 역할, 금속기판의 금속이 초전도층으로 확산되어 초전도층의 전기적 특성을 열화시키는 것을 막아주는 확산장벽으로의 역할 등을 수행한다. 1차 완충층은 금속기판의 집합조직을 유지하여야하며, 금속기판의 산화를 방지하면서 증착 되어야 한다. coated conductor 제조를 위한 첫 단계로 Pulsed Laser Deposition법을 이용하여 cube texture된 Ni 기판 위에 $Y_2O_3$ 박막을 증착 하였다. 최적의 증착 조건을 찾기 위해 증착 챔버의 산소 및 $H_2/Ar$ 혼합가스 분압과 기판온도를 변화시키면서 증착 하였다. $Y_2O_3$층의 (100) 집합조직은 기판온도 $600{\sim}700^{\circ}C$와 산소 분압 $0.01{\sim}0.1mTorr$에서 증착된 Y2O3 박막에서 금속기판과 유사한 집합조직을 얻을 수 있었다. 최적의 증착 조건에서 $Y_2O_3$ (222) ${\Phi}-scan$의 full width at half maximum (fwhm)이 $11^{\circ}$이고 (400) ${\omega}-scan$ fwhm은 $6^{\circ}$이었다.

• Applied Chemistry for Engineering
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• v.23 no.1
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• pp.1-7
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• 2012

In this article, I will introduce recent developments of environmental-friendly materials fabricated using atomic layer deposition (ALD). Advantages of ALD include fine control of the thin film thickness and formation of a homogeneous thin fim on complex-structured three-dimensional substrates. Such advantages of ALD can be exploited for fabricating environmental-friendly materials. Porous membranes such as anodic aluminum oxide (AAO) can be used as a substrate for $TiO_2$ coating with a thickness of about 10 nm, and the $TiO_2$-coated AAO can be used as filter of volatile organic compound such as toluene. The unique structural property of AAO in combination with a high adsorption capacity of amorphous $TiO_2$ can be exploited in this case. $TiO_2$ can be also deposited on nanodiamonds and Ni powder, which can be used as photocatalyst for degradation of toluene, and $CO_2$ reforming of methane catalyst, respectively. One can produce structures, in which the substrates are only partially covered by $TiO_2$ domains, and these structures turns out to be catalytically more active than bare substrates, or complete core-shell structures. We show that the ALD can be widely used not only in the semiconductor industry, but also environmental science.

• Journal of the Korean Magnetics Society
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• v.10 no.2
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• pp.67-73
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• 2000

Top spin valve samples with a structure Ta/NiFe/CoFe/Cu/CoFe/FeMn/Ta were deposited on a Si(100) substrate by changing d.c. magnetron sputtering conditions and the exchange-bias and magnetic properties of samples were investigated. The Exchange field, H$\_$ex/ increased with increase of sputtering power of FeMn from 30 to 150 W and CoFe from 30 to 100 W deposited on the Cu, the increase of H$\_$ex/ was found due to the improvement of preferred orientation of (111) FeMn phase from XRD results. In the case of Cu, H$\_$ex/ decreased with the increase of sputtering pressure ranging from 1 to 5 mTorr. The relationship between exchange field and resistance was investigated, spin valve samples with a large exchange field showed the lower resistance, which was strongly dependent on the good crystallinity and grain size increase as well as lower scattering effects. The Cu thickness was changed from 22 to 38 $\AA$ for Si/Ta/NiFe/CoFe/Cu(t), 30 W/CoFe, 100 W/FeMn, 100 W/Ta spin valve structures, MR ratio of 6.5 % and exchange field of about 190 Oe were obtained for the sample with Cu of 22 $\AA$ thickness. The increase of exchange field with decrease of Cu thickness was explained by FM/AFM spin-spin interaction.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.69-76
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• 2014

In this study, we developed an ultra-thin flexible printed circuit board(FPCB) using the sputtered flexible copper clad laminate. In order to enhance the adhesion between copper and polyimide substrate, a NiMoNb addition layer was applied. The mechanical durability and flexibility of the ultra-thin FPCB were characterized by stretching, twisting, bending fatigue test, and peel test. The stretching test reveals that the ultra-thin FPCB can be stretched up to 7% without failure. The twisting test shows that the ultra-thin FPCB can withstand an angle of up to $120^{\circ}$. In addition, the bending fatigue test shows that the FPCB can withstand 10,000 bending cycles. Numerical analysis of the stress and strain during stretching indicates the strain and the maximum von Mises stress of the ultra-thin FPCB are comparable to those of the conventional FPCB. Even though the ultra-thin FPCB shows slightly lower durability than the conventional FPCB, the ultra-thin FPCB has enough durability and robustness to apply in industry.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.22-25
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• 2007

In this research, magnetic properties of spin valve structures using IrMn layers as antiferromagnetic were studied depending on the thickness of the pinned layer. The spin valve structure was Si substrate/$SiO_2(2,000\;{\AA})/Mo(17\;{\AA})NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(t\;{\AA})/Ta(25\;{\AA})$. Also, Mo film was deposited on Si substrates and the thermal annealing effect was analyzed. The resistivity of the Mo film was increased as an annealing temperature was increased up to $600^{\circ}C$. The variations of MR ratio were related with magnetic exchange coupling field of the spin valve structures for various IrMn pinned layer thickness up to 130 ${\AA}$. MR ratio and $H_{ex}$ of spin valves was about 9.05% and 277.5 Oe when the thickness of the IrMn pinned layer was $32.5\;{\AA}(t=32.5\;{\AA})$. It was increased to 9.65% and 337.5 Oe for $t=65\;{\AA}$. For $t=97.5\;{\AA}$, the MR ratio and Hex decreased to 8.2% and 285 Oe, and further decrease was observed up to $t=130\;{\AA}$.

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.236-239
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• 2004

We studied the specular spin valve (SSV) having the spin filter layer (SFL) in contact with the ultrathin free layer composed of Ta3/NiFe2/IrMn7/CoFel/(NOLl)/CoFe2/Cu1.8/CoFe( $t_{F}$)/Cu( $t_{SF}$ )/(NOL2)/Ta3.5 (in nm) by the magnetron sputtering system. For this antiferromagnetic I $r_{22}$M $n_{78}$-pinned spin filter specular spin valve (SFSSV) films, an optimal magnetoresistance (MR) ratio of 11.9% was obtained when both the free layer thickness ( $t_{F}$) and the SFL thickness ( $t_{SF}$ ) were 1.5 nm, and the MR ratio higher than 11% was maintained even when the $t_{F}$ was reduced to 1.0 nm. It was due to increase of specular electron by the nano-oxide layer (NOL) and of current shunting through the SFL. Moreover, the interlayer coupling field ( $H_{int}$) between free layer and pinned layer could be explained by considering the RKKY and magnetostatic coupling. The coercivity of the free layer ( $H_{cf}$ ) was significantly reduced as compared to the traditional spin valve (TSV), and was remained as low as 4 Oe when the $t_{F}$ varied from 1 nm to 4 urn. It was found that the SFL made it possible to reduce the free layer thickness and enhance the MR ratio without degrading the soft magnetic property of the free layer.

• Journal of the Korean Chemical Society
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• v.50 no.2
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• pp.163-177
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• 2006

Alpha Nickel hydroxide samples have been synthesized by electrodeposition on platinum and nickel substrates at current densities of 1, 5, 6, 7 and 10 mAcm？2 at a controlled temperature of 30.00 oC from Ni(NO3)2 bath. Platinum substrate shows a tendency to incorporate less nitrate ions with increase in current density thus producing less hydroxy-deficient nickel hydroxide layers. On the whole the interlayer distance (d003) is found to be inversely proportional to the amount of nitrate ions incorporated in-between the lattice. For the first time we have observed a decrease in lattice spacing with increase in concentration of intercalant (anions) and the reason for lattice contraction is attributed to the columbic attractive forces exerted by the oppositely charged nitrate ion and positively charged slabs. The Infrared spectra of the samples with expanded interlayers show two types of OH vibrations corresponding to hydrogen bonded and non-hydrogen bonded OH groups whereas the contracted interlayers show only hydrogen-boded OH groups. Although the faradaic efficiency is found to increase with increase in applied current there is a local minimum at 6.0 mAcm？2 current density on both platinum and nickel substrates. In this manuscript, GC-MS data is provided which clearly demonstrates the electrodeposited nickel hydroxide sample to consist of huge amount of carbonate ions although the electrolyte solution in nickel nitrate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.4
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• pp.183-189
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• 2012

Surface treatments and their effects on high temperature properties for the Hastelloy X, which is a promising candidate alloy for high temperature heat-transport system, have been evaluated. For TiAlN and $Al_2O_3$ overlay coatings, the two different PVD (physical vapor deposition) methods using an arc discharge and a sputtering, were applied, respectively. In addition, a different surface treatment method of the diffusion coating by a pack cementation of Al (aluminiding) was also adopted in this study. To achieve enhanced thermal oxidation resistance at $1000^{\circ}C$ by suppressing the inhomogeneous formation of thick $Cr_2O_3$ crust at the surface region, a study for the surface modification methods on the morphological and structural properties of Hastelloy X substrates has been conducted. The structural and compositional properties of each sample were characterized before and after heat-treatment at $1000^{\circ}C$ under air and He environment. The results showed that the Al diffusion coating showed the more enhanced high temperature properties than the overlay coatings such as the suppressed thick $Cr_2O_3$ crust formation and lower wear loss.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.162-162
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• 1999

초고주파 집적회로의 핵심소자로 각광을 받고 있는 GaAs MESFET(MEtal-emiconductor)은 게이트 형성 공정이 가장 중요하며, WNx 내화금속을 이용한 planar 게이트 구조의 경우 임계전압(Vth:threshold voltage)의 균일도가 우수할 뿐만 아니라 특히 Side-wall을 이용한 self-align 게이트는 소오스 저항을 줄일 수 있어 고성능의 소자 제작을 가능하게 한다.(1) 본 연구의 핵심이 되는 Side-wall을 형성하기 위하여 PECVD법에 의한 SiOx 박막을 증착하고, 건식식각법을 이용하여 SiOx side-wall을 형성하였다. 이 공정을 이용하여 소오스 저항이 낮고 임계전압의 균일도가 우수한 고성능의 self-aligned gate MESFET을 제작하였다. 3inch GaAs 기판상에 이온주입법에 의한 채널 형성, d.c. 스퍼터링법에 의한 WNx 증착, PECVD법에 의한 SiOx 증착, MERIE(Magnetic Enhanced Reactive Ion Etcing)에 의한 Side-wall 형성, LDD(Lightly Doped Drain)와 N+ 이온주입, 그리고 RTA(Rapid Thermal Annealing)를 사용하여 활성화 공정을 수행하였다. 채널은 40keV, 4312/cm2로, LDD는 50keV, 8e12/cm2로 이온주입하였고, 4000A의 SiOx를 증착한 후 2500A의 Side-wall을 형성하였다. 옴익 접촉은 AuGe/Ni/Au 합금을 이용하였고, 소자의 최종 Passivation은 SiNx 박막을 이용하였다. 제작된 소자의 전기적 특성은 hp4145B parameter analyzer를 이용한 전압-전류 측정을 통하여 평가하였다. Side-wall 형성은 0.3$\mu\textrm{m}$ 이상의 패턴크기에서 수직으로 잘 형성되었고, 본 연궁에서는 게이트 길이가 0.5$\mu\textrm{m}$인 MESFET을 제작하였다. d.c. 특성 측정 결과 Vds=2.0V에서 임계전압은 -0.78V, 트랜스컨덕턴스는 354mS/mm, 그리고 포화전류는 171mA/mm로 평가되었다. 특히 본 연구에서 개발된 트랜지스터의 게이트 전압 변화에 따른 균일한 트랜스 컨덕턴스의 특성은 RF 소자로 사용할 때 마이크로 웨이브의 왜곡특성을 없애주기 때문에 균일한 신호의 전달을 가능하게 한다. 0.5$\mu\textrm{m}$$\times$100$\mu\textrm{m}$ 게이트 MESFET을 이용한 S-parameter 측정과 Curve fitting 으로부터 차단주파수 fT는 40GHz 이상으로 평가되었고, 특히 균일한 트랜스컨덕턴스의 경향과 함께 차단주파수 역시 게이트 바이어스, 즉 소오스-드레스인 전류의 변화에 따라 균일한 값을 보였다. 본 연구에서 개발된 Side-wall 공정은 게이트 길이가 0.3$\mu\textrm{m}$까지 작은 경우에도 사용가능하며, WNx self-align gate MEESFET은 낮은 소오스저항, 균일한 임계전압 특성, 그리고 높고 균일한 트랜스 컨덕턴스 특성으로 HHP(Hend-Held Phone) 및 PCS(Personal communication System)와 같은 이동 통신용 단말기의 MMICs(Monolithic Microwave Integrates Circuits)의 제작에 활용될 것으로 기대된다.