Abstract
Top spin valve samples with a structure Ta/NiFe/CoFe/Cu/CoFe/FeMn/Ta were deposited on a Si(100) substrate by changing d.c. magnetron sputtering conditions and the exchange-bias and magnetic properties of samples were investigated. The Exchange field, H$\_$ex/ increased with increase of sputtering power of FeMn from 30 to 150 W and CoFe from 30 to 100 W deposited on the Cu, the increase of H$\_$ex/ was found due to the improvement of preferred orientation of (111) FeMn phase from XRD results. In the case of Cu, H$\_$ex/ decreased with the increase of sputtering pressure ranging from 1 to 5 mTorr. The relationship between exchange field and resistance was investigated, spin valve samples with a large exchange field showed the lower resistance, which was strongly dependent on the good crystallinity and grain size increase as well as lower scattering effects. The Cu thickness was changed from 22 to 38 $\AA$ for Si/Ta/NiFe/CoFe/Cu(t), 30 W/CoFe, 100 W/FeMn, 100 W/Ta spin valve structures, MR ratio of 6.5 % and exchange field of about 190 Oe were obtained for the sample with Cu of 22 $\AA$ thickness. The increase of exchange field with decrease of Cu thickness was explained by FM/AFM spin-spin interaction.
6개의 타겟을 가진 직류 마그네트론 방식을 이용하여 스파터링 전력 및 압력을 변화시켜 Si/Ta(50 $\AA$)NiFe(60 $\AA$)/CoFe(20 $\AA$)/Cu(26 $\AA$)/CoFe(40 $\AA$)/FeMn(150 $\AA$)Ta(50 $\AA$) 스핀 밸브 박막을 제조하여 교환자기이방성 및 자기적 특성을 조사하였다. FeMn 층의 증착시 스파터링 전력을 증가시킴으로써 교환이방성을 증가시킬 수 있었으며, X-선 회절 실험결과 스파터링 전력 증가에 따른 교환이방성의 증가는 FeMn (111)면의 우선성장 발달에 기인하는 것으로 판단되었다. 강자성상을 사이에 두고 있는 Cu의 스파터링 압력을 1-5 mTorr 증가시 교환이방성이 급격히 감소하며, 자기저항비 및 자장민감도도 감소하였다. Si/Ta/NiFe/CoFe/Cu(t), 30 W/CoFe, 100 W/FeMn, 100 W/Ta 스핀 밸브에서 Cu 두께를 22-38 $\AA$까지 변화시켜 자기저항비를 조사한 결과 Cu의 두께가 22 $\AA$일 때 자기저항비 6.5%까지 얻을 수 있었으며, Cu 두께를 감소시켜 교환이방성을 증가시킬 수 있었다. 이와 같은 Cu 두께 감소에 따른 교환이방성의 증가는 FM-AFM 스핀-스핀 상호작용에 의하여 설명하였다.
