• Title/Summary/Keyword: New Precursor

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MOCVD Deposition of AlN Thin Film for Packaging Materials

  • Chang-Kyu, Ahna;Seung-Chul Choi;Seong-Hoon Cho;Sung-Hwan Han;Je-Hong Kyoung
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2000.04a
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    • pp.118-118
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    • 2000
  • New single-source precursor, [AlCI3:NH2tBu] was synthesized for AlN thin f film processing with AICI3 (Aluminum Chloride) and tBuNH2 (tert-butylamine). AlN thin films for packaging aspplication were deposited on sapphire substrate by a atmosph하ie-pressure MOCVD. In most of other study methyl-based AI precursors w were used for source, But herein Aluminum Chloride was used for as AI source i in order to prevent the carbon contamination in the films and stabilize the p precursor. New precursor showed the very high gas vapor pressure so it allowed to m make the film under atmospheric-pressure and get the high purified film. High q quality AlN thin film was obtained at 700 to $900^{\circ}C$. The new precursor was p purified by a sublimation technique and help to fabricate high purity film. It s showed high vapor pressure, which is able to a critieal factor for the high purity a and atmospheric CVD of AlN. High Quality AIN thin film was obtained at $700-900^{\circ}C$. The AIN film was characterized by RBS

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Synthesis of InP Nanocrystal Quantum Dots Using P(SiMe2tbu)3

  • Jeong, So-Myeong;Kim, Yeong-Jo;Jeong, So-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.533-534
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    • 2012
  • Colloidal III-V semiconductor nanocrystal quantum dots (NQDs) have attracted attention as they can be applied in various areas such as LED, solar cell, biological imaging, and so on because they have decreased ionic lattices, lager exciton diameter, and reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals is limited by difficulties in control nucleation because the molecular bonds in III-V semiconductors are highly covalent compared to II-VI compounds. There is a need for a method that provides rapid and scalable production of highly quality nanoparticles. We present a new synthetic scheme for the preparation of InP nanocrystal quantum dots using new phosphorus precursor, P(SiMe2tbu)3. InP nanocrystals from 530nm to 600nm have been synthesized via the reaction of In(Ac)3 and new phosphorus precursor in noncoordinating solvent, ODE. This opens the way for the large-scale production of high quality Cd-free nanocrystal quantum dots.

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Synthesis of Renewable Jet Fuel Precursors from C-C Bond Condensation of Furfural and Ethyl Levulinate in Water

  • Cai, Chiliu;Liu, Qiying;Tan, Jin;Wang, Tiejun;Zhang, Qi;Ma, Longlong
    • Korean Chemical Engineering Research
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    • v.54 no.4
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    • pp.519-526
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    • 2016
  • Biomass derived jet fuel is proven as a potential alternative for the currently used fossil oriented energy. The efficient production of jet fuel precursor with special molecular structure is prerequisite in producing biomass derived jet fuel. We synthesized a new jet fuel precursor containing branched $C_{15}$ framework by aldol condensation of furfural (FA) and ethyl levulinate (EL), where the latter of two could be easily produced from lignocellulose by acid catalyzed processes. The highest yield of 56% for target jet fuel precursor could be obtained at the optimal reaction condition (molar ratio of FA/EL of 2, 323 K, 50 min) by using KOH as catalyst. The chemical structure of $C_{15}$ precursor was specified as (3E, 5E)-6-(furan-2-yl)-3-(furan-2-ylmethylene)-4-oxohex-5-enoic acid ($F_2E$). For stabilization, this yellowish solid precursor was hydrogenated at low temperature to obtain C=C bonds saturated product, and the chemical structure was proposed as 4-oxo-6-(tetrahydrofuran-2-yl)-3-(tetrahydrofuran-2-yl)-methyl hexanoic acid ($H-F_2E$). The successful synthesis of the new jet fuel precursors showed the significance that branched jet fuel could be potentially produced from biomass derived FA and EL via fewer steps.

A Study on Co-precipitation of Positive Electrode Active Material for Recycled Lithium-ion Batteries Using Black Powder Leaching Solution (블랙 파우더 침출용액을 이용한 재활용 리튬이온전지의 양극 활물질 공침법에 대한 연구)

  • JAEGEUN LEE;JAEKYUNG LEE;SUNGGI KWON;GYECHOON PARK
    • Journal of Hydrogen and New Energy
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    • v.35 no.3
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    • pp.336-344
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    • 2024
  • In this study, a Ni0.9Co0.05Mn0.05(OH)2 precursor used as an anode active material using a black powder leaching solution of a recycled lithium ion battery was prepared through coprecipitation synthesis with co-precipitation time, NH4OH concentration, pH, and stirring time as variables. The characteristics of the prepared powder were analyzed by X-ray diffraction (XRD), scanning electron microscope (SEM), particle size analysis (PSA), and inductively coupled plasma optical emission spectroscopy (ICP-OES). It was confirmed that the single crystal thickness of the LiNi1-x-yCoxMnyO2 (NCM) precursor changes depending on the NH4OH concentration and reaction pH value, and thicker single crystals are formed at 2 M NH4OH compared to 1 M and at pH 10.8-11.8 compared to pH 11.8-12.0. NCM precursor particles increased with coprecipitation time, and it was confirmed that the 72 hours NCM precursor had the largest particle size. Through ICP-OES analysis, it was confirmed that the NCM precursor was synthesized with the target composition of Ni2+:Co2+:Mn2+=90:5:5.

The Revisionary Ratio and Architectural Identity of Seung, Hyo-Sang against the Precursor Kim, Swoo-Geun - Focusing on the Dialectic of Revisionism by Harold Bloom - (김수근에 대한 승효상 건축의 수정주의 행보 - 해럴드 블룸의 수정주의 변증법을 중심으로 -)

  • Kang, Yun-Sik;Kang, Hoon
    • Journal of architectural history
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    • v.23 no.1
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    • pp.51-62
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    • 2014
  • Architecture is a product of numerous influences, as shown in the apprenticeships of Kim, Jung-Up and Kim, Swoo-Geun with Le Corbusier's influences. Therefore, its identity is need to be re-defined based on such complex relationships. The rhetorical images of 'the Map of Misreading', as the core of the poetic identification proposed by Harold Bloom's 'the Theory of Influence', provide an efficient way of explaining the relations between architectural apprenticeships and identities. This research is to re-build a new methodology of architectural criticism based on it. The diachronic transformations of the architecture of Seung, Hyo-Sang also had very characteristic 'revisionary ratios' about his precursor Kim, Swoo-Geun. As an antithetic stance of his precursor's final phase, his early days works pursued continuously geometric abstraction and objective images of the architecture of Adolf Loos. However, his recent works are showing the obvious symptoms of regression to his origins. Finally, the architectural identity should be re-conceptualized as a complexity, based on inter-textuality from complex influences. This new architectural identity can be reflected into the modern obsessive identity.

Fabrication of YBCO films in MOD processing using F-free Y & Cu precursor solution (F-free Y & Cu 전구용액을 이용한 YBCO 박막 제조)

  • Kim, Young-Kuk;Yoo, Jai-Moo;Ko, Jae-Woong;Chung, Kook-Chae;Kim, Young-Jun;Han, Bong-Soo;Wang, X.L.;Dou, S.X.
    • Progress in Superconductivity and Cryogenics
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    • v.8 no.1
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    • pp.15-18
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    • 2006
  • A new precursor solution wilt low fluorine content was synthesized for MOD processing of coated conductors. In this study, the precursor solution for MOD processing was synthesized using F-free yttrium and copper precursor. It was shown that crack-free and uniform precursor films were formed after calcination in humidified oxygen atmosphere. Less than 2 hours were required to finish the calcination process. The relatively gradual weight loss during the calcination process is attributed to the feasibility of fast calcination profile. The calcined precursor film was converted to a YBCO film without any secondary phases after annealing in wet $Ar/O_2$ atmosphere. Fully converted film shows uniform microstructure and high critical current density. $(Jc=2.7MA/cm^2) $.

Preparation of ZnO Thin Films Using Zn/O-containing Single Precursorthrough MOCVD Method

  • Park, Jong-Pil;Kim, Sin-Kyu;Park, Jae-Young;Ok, Kang-Min;Shim, Il-Wun
    • Bulletin of the Korean Chemical Society
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    • v.30 no.1
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    • pp.114-118
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    • 2009
  • A new Zn/O single source precursor, TMEDA-Zn$(eacac)_2$, has been synthesized by using N, N, N’, N’-tetramethylethylendiamine (TMEDA), sodium ethyl-acetoacetate, and $ZnCl_2$. From this organometallic precursor, ZnO thin films have been successfully grown on Si (100) substrates through the metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions in the temperature range of 390~430 ${^{\circ}C}$. The synthesized ZnO films have been found to possess average grain sizes of about 70 nm with an orientation along the c-axis. The precursor and ZnO films are characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, EI-FAB-spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.

Studies on the mating type substance in Paramecium aurelia (짚신벌레의 성물질 합성에 대한 연구)

  • 강현삼
    • Korean Journal of Microbiology
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    • v.13 no.3
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    • pp.123-137
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    • 1975
  • Sexual reproduction of paramecia have been accomplished through conjugation between individuals which have opposite mating type substances on their cilia when they were starved. Using selfing clone in which mating takes place, I examined whether a mating type change in indicidual cells required new protein and new mRNA synthesis or not and also shether there is a precursor relationship between both of the complementary mating type substances in their synthetic pathway. I found that 1. Mating type change needs new protein(s) and new mRNA synthesis. 2. Mating type substances are synthesized sequentially from mating type XIII to XIV 3. There might be a common precursor pool from which the mating type XIII substnace is synthesized and then complementary mating type XIV is fromed by addition of small group to the mating type XIII substance.

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Preparation of Novel Magnesium Precursors and MgO Thin Films Growth by Atomic Layer Deposition (ALD)

  • Kim, Hyo-Suk;park, Bo Keun;Kim, Chang Gyoun;Son, Seung Uk;Chung, Taek-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.364.2-364.2
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    • 2014
  • Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

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