• 제목/요약/키워드: Negative temperature coefficient

검색결과 245건 처리시간 0.023초

($Pb_{1-x}Ca_{x})ZrO_{3}$계 세라믹스의 고주파 유전 특성 (Dielectric Properties of ($Pb_{1-x}Ca_{x})ZrO_{3}$ Ceramics at Microwave Frequencies)

  • 이상윤;최환;김왕섭;김경용
    • 전자공학회논문지A
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    • 제29A권10호
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    • pp.17-23
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    • 1992
  • A ($Pb_{1-x}Ca_{x})ZrO_{3}$ system which has a high dielectric constant, low dielectric loss and temperature coefficient was investigated. For sintering temperatures above 1350$^{\circ}C$ the microstructures of sintered bodies were unchanged regardless of the amount of CaO. The dielectric constant and dielectric loss decreased and the temperature coefficient varied from positive to negative with the increasing amount of CaO. For the CaO content of 0.37, i.e. ($Pb_{0.63}Ca_{0.37})ZrO_{3}$, the ceramic showed very good dielectric properties such as ${\varepsilon}_1$=100, Q > 1200 at 3GHz, and T$_f$=$\pm$3ppm/$^{\circ}C$.

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저온 열처리 공정에 따른 Ag2Se 나노입자 박막의 열전특성 (Effect of Annealing Temperature on Thermoelectric Properties of Ag2Se Nanoparticle Thin Films)

  • 양승건;조경아;윤정권;최진용;김상식
    • 전기학회논문지
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    • 제65권4호
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    • pp.611-616
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    • 2016
  • In this study, we synthesized $Ag_2Se$ nanoparticles (NPs) in an aqueous solution and investigated the thermoelectric characteristics of $Ag_2Se$ NPs thin films on plastic substrates. Regardless of thermal annealing treatment, all the $Ag_2Se$ NPs thin films show the negative Seebeck coefficients, indicating the n-type characteristics. As the annealing temperature increases, the electric conductivity increases while the Seebeck coefficient decreases. The electric conductivity of the thin film annealed at $180^{\circ}C$ is larger by $10^6$ times, compared with the as-prepared thin film, And the maximum power density for the thin film annealed at $180^{\circ}C$ is calculated to be $44{\mu}W/cm^2$.

0.17($Ba_{0.53}$, $Pb_{0.47}$)0-$0.16Nd_2O_3$-$0.67TiO_2$ 세라믹스의 고주파 유전특성에 미치는 Mn 첨가의 영향 (Effect of Mn Dopping on the Microwave Dielectric Properties of 0.17($Ba_{0.53}$, $Pb_{0.47}$)0-$0.16Nd_2O_3$-$0.67TiO_2$ Ceramics)

  • 윤중락;이헌용;김경용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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    • pp.292-294
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    • 1996
  • Dielectric properties were investigated at Mn doped 0.17($Ba_{0.53}$, $Pb_{0.47}$)0-$0.16Nd_2O_3$-$0.67TiO_2$ system in microwave frequency. It was observed that dielectric constant of 90.1, quality factor of 1320 (at 3.8GHz) and temperature coefficient of resonance frequency 2.3 ppm/$^{\circ}C$ for 0.5wt% Mn doped 0.17($Ba_{0.53}$, $Pb_{0.47}$)0-$0.16Nd_2O_3$-$0.67TiO_2$ system in sintering condition $1290^{\circ}C$/2hr. The quality factor increase due to the compensation effect of Mn ions yp to 0.5wt% and the decrease due to the interface relaxation effect. The temperature coefficient of resonance frequency increases to negative direction with increasing the amounts of Mn.

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Energy Level이 다른 분산염료를 이용한 Poly(trimethylene terephthalate)섬유의 염색성 (The Dyeing Properties of Poly(trimethylene terephthalate) by Disperse Dyes with Different Energy Level)

  • 백지연;김정렬;이난형;윤태희;김삼수
    • 한국염색가공학회지
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    • 제15권5호
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    • pp.316-320
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    • 2003
  • In order to investigate the dyeing property of poly trimethylene terephthalate(PTT) fabric, the dyeing of PTT fabric was carried at under condition of different dyeing temperature by using several disperse dyes with different energy level. Particularly, this study discussed the PTT dyeing thermodynamically. Used disperse dyes were selected based on the their chemical structure and energy level. The obtained results were as followings; The dye adsorption of S type disperse dye such as C. I. Disperse Blue 79 increased with increasing dyeing temperature. In a exhaustion rate of PTT fabric with disperse dyes, C. I. Disperse Blue 56 showed higher values than that of C. I. Disperse Orange 29 and Blue 79. For the interpretation of thermodynamic dyeing behavior, the partition coefficient ( K ) and some several thermodynamic parameters such as standard affinity$(-\mu^\circ)$ and heat of dyeing$(\Delta{H}^\circ)$ calculated from the adsorption isotherm. From above results, as the energy level of disperse dye is small, the partition coefficient and standard affinity increased. But the heat of dyeing of PTT fabric with disperse dye showed high negative value in order of E type(C. I. Disperse Blue 56), SE type(C. I. Disperse Orange 29) and S type(C. I. Disperse 79).

아크 이온플레이팅법에 의한 저온 CrN 합성 (The Low Temperature Deposition of CrN Films by the AIP Method)

  • 조용기;김상권;이원범;김성완
    • 열처리공학회지
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    • 제20권2호
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    • pp.78-83
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    • 2007
  • CrN coatings were deposited by cathodic arc ion plating method on the SKD11 steel substrates. Atmosphere temperature of $350^{\circ}C$, arc current of 90 A, nitrogen partial pressure of 1.0-5.3 Pa, and negative bias voltage of 30-135 V were selected. The characteristics of microstructure were investigated with XRD. Hardness, adhesion and friction coefficient measured by microhardness tester, scratch tester, and ball on disk tribometer. Microstructures depended on nitrogen partial pressure and bias voltage. The preferred orientation of the films was changed from (200) to (111) with decreasing pressure and increasing bias voltage. Adhesion properties related with microstructure, but microstructure changes slightly influenced on hardness and friction properties. The critical load.($Lc_1$) and hardness of CrN films deposited at 5.3 Pa, -30 V condition were 55 N(HF1), $2157{\pm}47\;Hk_{0.025}$. The friction coefficient were about 0.5 under dry condition.

Crystalline Phases and Dielectric Properties of Crystallized Glasses in the System (Ca, Sr, Ba) O-Al2O3-B2O3-SiO2-TiO2

  • Tuzuku, Koichiro;Kishi, Hiroshi;Taruta, Seiichi;Takusagawa, Nobuo
    • The Korean Journal of Ceramics
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    • 제5권2호
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    • pp.189-194
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    • 1999
  • Crystallization of glasses in the system (Ca, Sr, Ba)$O-Al_2O_3-B_2O_3-SiO_2-TiO_2$ and dielectric properties of crystallized glasses were investigated. As increasing B2O3 content and decreasing SiO2 content in the glass, the major crystalline phase changed from $(Sr, Ba)_2TiSi_2O_8$ to (Ca, Sr, Ba)TiO3, the dielectric constant of crystallized glasses increased and the Temperature Coefficient of Capacitance (TCC) changed to negative. The dielectric constant and TCC was estimated for (Sr, Ba)2TiSi2O8 phase as 18 and -440 $ppm/^{\circ}C$, respectively and for (Ca, Sr, Ba)TiO3 phase as 307 and -1900 $ppm/^{\circ}C$, respectively. The dielectric properties of (Ca, Sr, Ba)TiO3 phase (in this study) were similar to those of (Ca, Ba) TiO_3 solid-solution^12)$, but $(Sr, Ba)_2TiSi_2O_8$ phase (in this study) and $Sr_2TiSi_2O_\;8^4$ showed the different properties.

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낮은 TCR 특성을 가지는 플레이트 션트저항의 전기적 특성 (Electrical Properties of Plate Typed Shunt Resistors with Low TCR Property)

  • 임영택;김은민;이상원;안정래;이선우
    • 한국전기전자재료학회논문지
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    • 제32권3호
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    • pp.219-222
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    • 2019
  • In this study, we fabricated plate-type shunt resistors with thermal stability by parallelly connecting metal alloy plates with positive temperature coefficient of resistance (TCR) and carbon nanotube (CNT) plates with negative TCR. The metal alloy plates, which were prepared by alloying Cu and Mn with a composition of 91 wt% of Cu and 9 wt% of Mn, showed around $800ppm/^{\circ}C$ of TCR, and the CNT plates prepared from the CNT solution by using the vacuum filtration method showed around $-800ppm/^{\circ}C$ of TCR. The shunt resistor that was fabricated by stacking metal alloy plates and CNT plates in this work showed about $46.93ppm/^{\circ}C$ of TCR. Therefore, we conclude that a shunt resistor with low TCR can be realized by simply adjusting the TCR of the metal alloy only, because the TCR of the CNT plate has an identical value.

(Ba,Sr,Mg)$TiO_3$를 이용한 입계층 캐패시터의 제작 및 유전특성에 관한 연구 (The preparation and characteristics of (Ba,Sr,Mg) $TiO_3$ ceramic for BL capacitor)

  • 오재유;오의균;강도원;김범진;박태곤
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
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    • pp.251-254
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    • 1998
  • The ($0.8BaTiO_3-0.1SrTiO_3-0.1MgTiO_3$)+$0.006Nb_2O_5$ ceramics were fabricated by conventional ceramic process. The dielectric property of specimen was investigated that the specimen was sintering temperature at 1,300C for 3hours and then annealed at $1,100^{\circ}C$ for 3hours in a atmosphere (air) to be painted on the surface with CuO paste. The results of the temperature and frequency are varied, the dielectric constant and loss tangent are unsuitable for BL capacitor. The dielectric constants were varied to be negative temperature coefficient(2.000-3,000) in the temperature range between -10 and $140^{\circ}C$, the dissipation factors (tan $\delta$) were some high(0.1-0.3). It was not grain insulation, in cause of the some difficult to be annealed temperature with CuO paste and fired atmosphere. But, we have some different annealing temperature and fired atmosphere, it will be suitable BL(Boundary Layer)capacitor.

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Dimensional Responses of Wood Under Cyclical Changing Temperature at Constant Relative Humidity

  • Yang, Tiantian;Ma, Erni;Shi, Yi
    • Journal of the Korean Wood Science and Technology
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    • 제43권5호
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    • pp.539-547
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    • 2015
  • To investigate dimensional responses of wood under dynamic temperature condition, poplar (populous euramericana Cv.) specimens, 20 mm in radial (R) and tangential (T) directions with two thicknesses of 4 and 10 mm along the grain, were exposed to cyclic temperature changes in square wave between $25^{\circ}C$ and $40^{\circ}C$ at 60% relative humidity (RH) for three different cycling periods of 6 h, 12 h and 24 h. R and T dimensional changes measured during the cycling gave the following results: 1) Transverse dimensional changes of the specimens were generally square but at an opposite phase and lagged behind the imposed temperature changes. The phase lag was inversely correlated with cycling period, but positively related to specimen thickness, while the response amplitude was directly proportional to cycling period, but in a negative correlation with specimen thickness. 2) The specimens showed swelling hysteresis behavior. The heat shrinkage coefficient (HSC) became greater as cycling period increased or specimen thickness decreased. 3) Dimensional changes of the specimens produced deformation accumulation during repeated adsorption and desorption. The deformation accumulating ratio decreased with an increase in cycling period and specimen thickness. 4) Wood suffered 1.5 times as many dimensional changes per unit temperature variation as per unit humidity variation, and this deformation behaved even more seriously under static condition.

Characteristics of tantalum nitride thin film resistors deposited on $SiO_2/Si$ substrate using D.C-magnetron sputtering

  • Cuong, Nguyen Duy;Phuong, Nguyen Mai;Kim, Dong-Jin;Kang, Byoung-Don;Kim, Chang-Soo;Yoon, Soon-Gil
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.64-65
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    • 2005
  • The structural and electrical properties of the films are investigated as a function of nitrogen/argon ratio at room temperature and at various deposition temperatures. The phase changes as $Ta_2N$ or TaN in the films were observed as nitrogen/argon ratio increases from 3% to 25%. The phase changes were associated with a change in the resistivity and TCR (temperature coefficient of resistance) of the films. TCR values of the films deposited at room temperature and different nitrogen contents were negative, and strongly decreased with the increase in nitrogen/argon ratio. The Ta2N films deposited at nitrogen/argon ratio of 3% show improved TCR values and thermal stability with increasing deposition temperature. The $Ta_2N$ films grown at nitrogen/argon ratio of 3% and the temperature of $200^{\circ}C$ showed a TCR value of -47 $ppm/^{\circ}C$, which is close to near-zero TCR in the range of deposition temperature.

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