• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.189-194
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• 1999

Crystallization of glasses in the system (Ca, Sr, Ba)$O-Al_2O_3-B_2O_3-SiO_2-TiO_2$ and dielectric properties of crystallized glasses were investigated. As increasing B2O3 content and decreasing SiO2 content in the glass, the major crystalline phase changed from $(Sr, Ba)_2TiSi_2O_8$ to (Ca, Sr, Ba)TiO3, the dielectric constant of crystallized glasses increased and the Temperature Coefficient of Capacitance (TCC) changed to negative. The dielectric constant and TCC was estimated for (Sr, Ba)2TiSi2O8 phase as 18 and -440 $ppm/^{\circ}C$, respectively and for (Ca, Sr, Ba)TiO3 phase as 307 and -1900 $ppm/^{\circ}C$, respectively. The dielectric properties of (Ca, Sr, Ba)TiO3 phase (in this study) were similar to those of (Ca, Ba) TiO_3 solid-solution^12)$, but $(Sr, Ba)_2TiSi_2O_8$ phase (in this study) and $Sr_2TiSi_2O_\;8^4$ showed the different properties.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.24 no.4
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• pp.129-134
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• 2024

In this paper, This paper is a liquid droplet discharge system using a water level sensor that can linearly detect changes in water level through experiments with an infrared sensor, a laser sensor, an ultrasonic sensor, and a capacitance sensor. SMPS, regulator 5V, and LDO 3.3V were designed for power supply. A water level sensor input ADC circuit and microprocessor were used. Solenoid valve control, pump output control unit for positive/negative pressure generation, CAN, Ethernet, UART communication, and USB for industrial communication were used. The change in pressure was confirmed through the change in water level, the change in pressure was minimized, and a system for discharging liquid droplets was implemented.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.106-110
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• 2014

The passivation property of $Al_2O_3$ thin film formed using atomic layer deposition (ALD) for the application of crystalline Si solar cells was investigated using microwave photoconductance decay (${\mu}$-PCD). After post-annealing at $400^{\circ}C$ for 5 min, $Al_2O_3$ thin film exhibited the structural stability having amorphous nature without the interfacial reaction between $Al_2O_3$ and Si. The post-annealing at $400^{\circ}C$ for 5 min led to an increase in the relative effective lifetime of $Al_2O_3$ thin film. This could be associated with the field effective passivation combined with surface passivation of textured Si. The capacitance-voltage (C-V) characteristics of the metal-oxide-semiconductor (MOS) with $Al_2O_3$ thin film post-annealed at $400^{\circ}C$ for 5 min was carried out to evaluate the negative fixed charge of $Al_2O_3$ thin film. From the relationship between flatband voltage ($V_{FB}$) and equivalent oxide thickness (EOT), which were extracted from C-V characteristics, the negative fixed charge of $Al_2O_3$ thin film was calculated to be $2.5{\times}10^{12}cm^{-2}$, of which value was applicable to the passivation layer of n-type crystalline Si solar cells.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.6
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• pp.479-486
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• 2021

In this paper, an ultra small phase locked loop (PLL) with a single capacitor loop filter has been proposed by adding a signal sensing circuit (SSC). In order to extremely reduce the size of the PLL, the passive element loop filter, which occupies the largest area, is designed with a very small single capacitor (2pF). The proposed PLL is designed to operate stably by the output of the internal negative feedback loop including the SSC acting as a negative feedback to the output of the single capacitor loop filter of the external negative feedback loop. The SSC that detects the PLL output signal change reduces the excess phase shift of the PLL output frequency by adjusting the capacitance charge of the loop filter. Although the proposed structure has a capacitor that is 1/78 smaller than that of the existing structure, the jitter size differs by about 10%. The PLL is designed using a 1.8V 180nm CMOS process and the Spice simulation results show that it works stably.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1364-1369
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• 2005

In this paper, we have identified the mechanism of C-V hysteresis behavior often observed in pentacene organic thin-film transistors (OTFTs). The capacitance-voltage (C-V) characteristics were measured for pentacene OTFTs fabricated on glass substrates with MoW as gate/source/drain electrode and TEOS $SiO_2$ as gate insulator. The measurements were made at room temperature and elevated temperatures. From the room temperature measurements, we found that the hysteresis behavior was caused by hole injection into the gate insulator from the pentacene semiconductor for large negative gate voltages, resulting in the negative flat-band voltage shift. However electron injection was observed only at elevated temperatures

• Advances in materials Research
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• v.2 no.1
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• pp.1-13
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• 2013

Lead-free compound $(Na_{0.5}Bi_{0.5})(Zr_{0.75}Ti_{0.25})O_3$ was prepared using conventional ceramic technique at $1070^{\circ}C$/4h in air atmosphere. X-ray diffraction analysis showed the formation of single-phase orthorhombic structure. Permittivity data showed low temperature coefficient of capacitance ($T_{CC}{\approx}5%$) up to $100^{\circ}C$. Complex impedance studies indicated the presence of grain boundary effect, non-Debye type dielectric relaxation and evidences of a negative temperature coefficient of resistance. The ac conductivity data were used to evaluate the density of states at Fermi level and apparent activation energy of the compound.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.04a
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• pp.635-640
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• 1996

A thermo-elastic system in the production machine has highly nonlinear dynamic characteristics. In general, the finite element method is utilized for accurate analysis. However, it requires large computing time. Thus, thermo-elastic systems are usuallymodeled as electric and fluid system using lumped para,eter. In this paper. we propose the bondgraph model and transient simulation methodology of thermo-elastic system in consideration of various boundary and joint contact conditions. Consequently, the proposed method ensures a possibility of its on-line compensation about undesirable phenomena by using real time estimate process and electronic cooling device for thermal appropriate behavior. Thermo-elastic model consisting of bush and shaft including contact condition is presented.

• Journal of the Korean Applied Science and Technology
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• v.28 no.3
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• pp.329-334
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• 2011

The electrochemical performances of an asymmetric hybrid capacitor were investigated using $LiFePO_4$ as the positive electrode and active carbon fibers(ACF) as the negative electrode. The electrochemical behaviors of a nonaqueous hybrid capacitor were characterized by constant current charge/discharge test. The specific capacitance using $LiFePO_4$/ACF electrode turned out to be $0.87F/cm^2$ and the unit cell showed excellent cycling performance. This hybrid capacitor was able to deliver a specific energy as high as 178 Wh/kg at a specific power of 1,068 W/kg.

• Journal of information and communication convergence engineering
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• v.13 no.4
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• pp.257-263
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• 2015

In this study, organic field-effect transistors (OFETs) using a copper phthalocyanine (CuPc) material as an active layer and SiO₂ as a gate insulator were fabricated with varying active layer thicknesses and channel lengths. Further, using a thermal evaporation method in a high-vacuum system, we fabricated a CuPc FET device of the top-contact type and used Au materials for the source and drain electrodes. In order to discuss the channel formation and FET characteristics, we observed the typical current-voltage characteristics and calculated the threshold voltage of the CuPc FET device. We also found that the capacitance reached approximately 97 pF at a negative applied voltage and increased upon the accumulation of carriers at the interface of the metal and the CuPc material. We observed the typical behavior of a FET when used as an n-channel FET. Moreover, we calculated the threshold voltage to be about 15-20 V at V_DS = -80 V.

• ETRI Journal
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• v.31 no.6
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• pp.755-764
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• 2009

This paper presents a switched self-biasing and a tail current-shaping technique to suppress the 1/f noise from a tail current source in differential cross-coupled inductance-capacitance (LC) voltage-controlled oscillators (VCOs). The proposed LC VCO has an amplitude control characteristic due to the creation of negative feedback for the oscillation waveform amplitude. It is fabricated using a 0.13 ${\mu}m$ CMOS process. The measured phase noise is -117 dBc/Hz at a 1 MHz offset from a 4.85 GHz carrier frequency, while it draws 6.5 mA from a 0.6 V supply voltage. For frequency tuning, process variation, and temperature change, the amplitude change rate of the oscillation waveform in the proposed VCO is 2.1 to 3.2 times smaller than that of an existing VCO with a fixed bias. The measured amplitude change rate of the oscillation waveform for frequency tuning from 4.55 GHz to 5.04 GHz is 131 pV/Hz.