• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.141-144
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• 1998

The electrical characteristics of poly-Si TFT's with offset structure by negative bias stress are systematically investigated as a function of offset length. The changes of electrical characteristics, V$\_$th/, off-current, on/off ratio, in the offset structured poly-Si TFT's are smaller than that of the conventional structured poly-Si TFT's under the stress condition (V$\_$ds/=20V, V$\_$gs/=-20V). It is found that the hot carrier effect by negative bias stress is suppressed by the offset structured poly-Si TFT's because the local electric field near the drain region is decreased by offset region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제18권10호
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• pp.883-890
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• 2005

In this paper, the established model of NBTI (Negative Bias Temperature Instability) mechanism was reviewed. Based on this mechanism, then, the influence of nitrogen was discussed among other processes. A constant concentration of nitrogen exists inside $SiO_2$ in order to prevent boron from diffusing and to increase dielectric constant. It was shown that NBTI improvement was achieved by controlling nitrogen profile. It was supposed that the existence of low activation energy of Si-N bonds at $Si-SiO_2$ interface attributes the improvement by making hydrogen prevent interface traps. It was also shown that improvement of NBTI can be achieved by more effective control of nitrogen profile. It was supposed that the maximum control of nitrogen profile can be achieved by DPN (Decoupled Plasma Nitridation) process.

• Transactions on Electrical and Electronic Materials
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• 제5권3호
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• pp.122-125
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• 2004

ITO films were deposited on polyethylene terephthalate substrate by a dc reactive magnetron sputtering using rf bias without substrate heater and post-deposition thermal treatment. The dependency of rf substrate bias on plasma sputter processing was investigated to control energetic particles and improve ITO film properties. The substrate was applied negative rf bias voltage from 0 to -80 V. The composition of indium, tin, and oxygen atoms is strongly depended on the rf substrate bias. Oxygen deficiency is the highest at rf bias of -20 V. The electrical and optical properties of ITO films also are dominated obviously by negative rf bias.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제14권11호
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• pp.869-873
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• 2001

The effects of alternate bias stress on p-channel poly-Si TFT\`s has been systematically investigated. We alternately applied positive and negative bias stress on p-channel poly-Si TFT\`s, device Performance(V$\_$th/, g$\_$m/, leakage current, S-slope) are alternately appeared to be increasing and decreasing. It has been shown that device performance degrade under the negative bias stress while improve under the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ interface under alternate bias stress.

• Journal of the Korean Vacuum Society
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• 제7권2호
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• pp.94-103
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• 1998

We investigated a bias effect for diamond films deposited by a HFCVD(Hot Filament Chemical Vapor Deposition) method using a methane-hydrogen gas mixture. During deposition total chamber pressure, methane concentration, filament temperature and substrate temperature was 20 torr, 1.0%, $2100^{\circ}C$ and $980^{\circ}C$ respectively. Also DC bias was applied during both the nucleation stage and the growth stage systematically. We found that negative bias enhanced the nucleation density at the nucleation stage, but it made a bad influence on the morpholohy of films at the growth stage. Positive bias enhanced the growth rate and resulted in a good morpholohy of films. Therefore we concluded that it was effective to apply the negative bias during the nucleation stage and then to switch into the positive bias during the growth stage in the fabrication of diamond films.

• Proceedings of the KIEE Conference
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.879-880
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• 2008

At the high speed operation, the boost negative bias can reduce the negative torque and increase the dwell angle, so the output power and efficiency can be improved. In this paper, a novel power converter for single phase SRM with boost negative bias is proposed. A simple passive capacitor circuit is added in the front-end, which consists of three diodes and one capacitor. Based on this passive capacitor network, the two capacitors can be connected in series and parallel in different condition. In proposed converter, the phase winding of SRM obtains general dc-link voltage in excitation mode and the double dc-link voltage in demagnetization mode. The operation modes of the proposed converter are analyzed in detail. Some computer simulation and experimental results are done to verify the performance of proposed converter.

• Journal of Internet Computing and Services
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• 제2권1호
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• pp.23-30
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• 2001

ILP processors require an accurate branch prediction scheme to achieve higher performance. Two-Level branch predictor has been known to achieve high prediction accuracy. But, when a branch accesses a PHT entry that was, previously updated by other branch, Two-level predictor may cause interferences. Negative interferences among all interferences have a negative effect on performance, since they can cause branch mispredictions. Agree predictor achieve high prediction accuracy by converting negative interferences to positive interferences by adding bias bits to BTB, but negative interferences may occur when bias bit is set incorrectly. This paper presents a new dynamic branch predictor which reduces negative interferences. In the proposed predictor, we attach hit bits to entries in BTB to change bias bit dynamically during the execution time, h a result the proposed scheme improve the accuracy of prediction by reducing negative Interferences effectively, To illustrate the effect of the proposed scheme, we evaluate the performance of this scheme using SPEC92int benchmarks, The results show that the proposed scheme can outperform traditional branch predictors.

• ETRI Journal
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• 제31권1호
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• pp.62-64
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• 2009

We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo-generated holes at the gate insulator and/or insulator/channel interface.

• The Transactions of The Korean Institute of Electrical Engineers
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• 제58권8호
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• pp.1519-1525
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• 2009

This paper presents a novel passive converter for single phase SRM. The proposed passive converter has additional passive power circuit which is consisted by three diodes and one capacitor in the front-end of conventional asymmetric converter to supply a high negative bias during demagnetization. The high negative bias can reduce the demagnetization time and negative torque from tail current in single phase SRM. So, It can extend positive torque region by the extended turn-off position. In this paper, the structure and operating modes of a novel passive converter are introduced with mathematical model. The proposed single phase SRM using passive converter is verified by the computer simulation and experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.489-492
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• 1999

The effects of alternate bias stress on p-channel poly-Si TPT's has been systematically investigated. It has been shown that the application of alternate bias stress affects device degradation for the negative bias stress as well as device improvement for the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ under bias stress.