• 반도체디스플레이기술학회지
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• 제21권2호
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• pp.123-126
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• 2022

We investigated deep levels in n-type 4H-SiC epitaxy layer of the Positive-Intrinsic-Negative diode and Schottky barrier diodes by using deep level transient spectroscopy. Despite the excellent performance of 4H-SiC, research on various deep level defects still requires a lot of research to improve device performance. In Positive-Intrinsic-Negative diode, two defects of 196K and 628K are observed more than Schottky barrier diode. This is related to the action of impurity atoms infiltrating or occupying the 4H-SiC lattice in the ion implantation process. The I-V characteristics of the Positive-Intrinsic-Negative diode shows about ~100 times lower the leakage current level than Schottky barrier diode due to the grid structures in Positive-Intrinsic-Negative. As a result of comparing the capacitance of devices diode and Schottky barrier diode devices, it can be seen that the capacitance value lowered if it exists the P implantation regions from C-V characteristics.

• Journal of Power Electronics
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• 제19권1호
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• pp.89-98
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• 2019

This paper analyzes the input side performance of a conventional three-phase to single-phase matrix converter (3-1MC). It also presents the input-side waveform quality under this topology. The suppression of low-frequency input current harmonics is studied using the 3-1MC plus capacitance compensation unit. The constraint between the modulation function of the output and compensation sides is analyzed, and the relations among the voltage utilization ratio and the output compensation capacitance, filter capacitors and other system parameters are deduced. For a 3-1MC without large-capacity energy storage, the system performance is susceptible to input voltage imbalance. This paper decouples the inner current of the 3-1MC using a Lyapunov function in the input positive and negative sequence bi-coordinate axes. Meanwhile, the outer loop adopts a voltage-weighted synthesis of the output and compensation sides as a cascade of control objects. Experiments show that this strategy suppresses the low-frequency input current harmonics caused by input voltage imbalance, and ensures that the system maintains good static and dynamic performances under input-unbalanced conditions. At the same time, the parameter selection and debugging methods are simple.

• 한국재료학회지
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• 제17권11호
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• pp.574-579
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• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• Journal of information and communication convergence engineering
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• 제5권1호
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• pp.42-44
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• 2007

The a-Si:H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si:H TFTs is inverted staggered. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr) $1500{\AA}$ under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these, thin films is formed with a-SiN:H ($2000{\mu}m$), a-Si:H($2000{\mu}m$) and $n^+a-Si:H$ ($500{\mu}m$). We have deposited $n^+a-Si:H$, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the $n^+a-Si:H$ layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFTs decreasing parasitic capacitance of source-drain show drain current of $8{\mu}A$ at 20 gate voltages, $I_{on}/I_{off}$ ratio of ${\sim}10^8$ and $V_{th}$ of 4 volts.

• Journal of Electrical Engineering and Technology
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• 제7권2호
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• pp.207-211
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• 2012

Spinel-$Li_4Ti_5O_{12}$ was successfully synthesized by a solid-phase method at 800, 850, and $900^{\circ}C$ according to the $Li_4Ti_5O_{12}$ cubic spinel phase structure. To achieve higher EDLC energy density with the $Li_4Ti_5O_{12}$, the negative electrode of the hybrid supercapacitor was studied in this work. The electrochemical performances of the hybrid supercapacitor and EDLC were characterized by constant current discharge curves, c-rate, and cycle performance testing. The capacitance (1st cycle) of the hybrid supercapacitor and EDLC was 209 and 109 F, respectively, which is higher than EDLC. The capacitance of the hybrid supercapacitor decreases from 209 F to 101 F after 20 cycles when discharged at several specific current densities ranging from 1 to 10 A. In contrast, capacitance of the EDLC hardly decreases after 20 cycles. Results show that hybrid supercapacitor benefits from the high rate capability of supercapacitor and high capacity of the battery. Findings also prove that the hybrid supercapacitor is an energy storage device where the supercapacitor and the Li ion secondary battery coexist in one cell system.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.107-109
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• 2003

Single phase induction motor is directly used usual source, it can be a source of an appliance such as mechanical fan, refrigerator, washing machine, etc. Especially capacitor-run single phase induction motor is suitable to make more inexpensive and high efficient products because it is more high efficiency, and good to start than other single phase induction motors. Generally, voltage and current of capacitor-run single phase induction motor transfer to the part of positive phase and negative phase based on two motor theory. In this paper, we simulate the torque characteristics to capacitance variation from single phase induction motor's equivalent circuit. Through the test using the real motor, we compare and investigate the maximum torque of run state related with capacitance and the adequacy of the converted model.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 A
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• pp.145-147
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• 2002

In this paper, the improved fault locating method using distributed parameter which calculating the reduced voltage and current according to the ground capacitance in long transmission line was proposed. For the purpose of the fault locating algorithm non influenced source impedance, the loop method was used in the system modeling analysis. To enhance the fault locating, zero sequence of the fault current which is variable according to ground capacitance was not used but positive and negative sequence. System model was simulated using EMTP software. To verify the accuracy of proposed method, in different cases 64 sampled data per cycle was used and 160km and 300km long transmission line has fault resistance $0{\Omega}\;and\;100{\Omega}$ respectively was compared.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1473-1475
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• 2002

This study presents the dielectric properties of $Ta_2O_5$ MIM capacitor structure processed by thermal oxidation. The AES(auger electron emission) depth profile showed thermal oxidation effect gives rise to the $O_2$ deficiened into the new layer. The leakage current density respectively, at $1{\sim}3{\times}10^{-3}$(kV/cm) were $3{\times}10^{-4}-10^{-8}(A/cm^2)$. Leakage current density behavior is stable irrespective of applied electric field, the frequency va capacitance characteristic enhanced stability. The capacitance vs voltage measurement that, $V_{fb}$(flat-band voltage) was increase dependance on the thin films thickness, it is changed negative to positive.

• Journal of electromagnetic engineering and science
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• 제17권1호
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• pp.34-38
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• 2017

In this paper, we propose an active tunable bandpass filter (BPF) for efficient spectrum sensing in the TV White Space (TVWS) band. By designing a narrow bandwidth, it is possible to improve the sensing probability. The basic circuit configuration involves switching the PIN diode compromising capacitor bank to change the capacitance of the LC resonant circuit. To cover the whole TVWS band effectively, we add a varactor diode, and the bandwidth is set to 25-MHz. We improve the insertion loss by using the active capacitance circuit. The tunable BPF in the TVWS band with a 20-MHz interval is designed to have 11 channels with a bandwidth of 25 MHz and a low insertion loss of 1.7-2.0 dB.

• 한국전자파학회논문지
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• 제27권4호
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• pp.350-357
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• 2016

본 논문에서는 5.8 GHz에서 동작하는 기생패치를 이용한 소형 메타구조 기반의 뮤-제로 영차공진 안테나를 제안한다. 제안된 안테나는 뮤-네거티브(MNG: Mu-negative) 전송선로의 직렬 인덕턴스와 커패시턴스를 사용하는 뮤-제로 영차공진 안테나이며, 간단한 구조의 기생패치를 추가함으로써 직렬 커패시턴스를 증가시켜 소형화 하였다. 추가된 기생패치는 기존의 직렬 커패시턴스에 추가적인 병렬로 커패시턴스를 만들어 공진 주파수를 결정하는 직렬 커패시턴스를 등가적으로 증가시킨다. 기생패치는 HFSS를 이용한 모의실험을 통하여 최적화되었다. 제안된 안테나는 0.59의 kr값을 가지며, 기존 뮤-제로 영차공진 안테나 크기 대비 24 % 소형화 되었으며, 92 %의 효율과 6.57 dBi의 이득을 보였다. 최종 설계된 안테나는 제작 및 측정되었으며, 측정 결과는 모의실험 결과와 잘 일치함을 확인하였다.