• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.291.1-291.1
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• 2014

산화아연 박막은 아연이 코팅된 테프론 기판 위에 졸-겔 스핀코팅 방법을 이용하여 각기 다른 후열처리 온도에서 제작되었다. 산화아연 박막의 후열처리 온도에 따른 구조적, 광학적 특성은 field emission scanning electron microscopy (FE-SEM), X-ray diffractometer, and photoluminescence spectroscope를 이용하여 분석하였다. 후열처리 온도를 달리하여 성장한 모든 산화아연 박막은 수지상(dendrite) 구조를 가지고 있으며, 이 수지상 구조 위에 약 20 nm의 산화아연 입자들이 성장되었다. 후열처리 온도가 증가함에 따라 c-축 배향성이 우세하게 나타났으며, 인장응력도 증가하였다. 후열처리 온도 $400^{\circ}C$에서 Near-band-edge emission (NBE) 피크는 적색편이(red-shift) 하였고, 후열처리 온도가 증가함에 따라 deep-level emission (DLE) 피크의 세기는 감소하였다. 또한 $400^{\circ}C$의 후열처리 온도에서 NBE 피크의 반치폭(FWHM)이 가장 작았으며, INBE/IDLE의 비율이 가장 높았다. 따라서 $400^{\circ}C$의 후열처리 공정에 의해 결정성 및 광학적 특성이 가장 우수한 산화아연 박막을 얻을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.290.1-290.1
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• 2014

스핀코팅방법으로 증착된 ZnO 박막의 단계적 후열처리에 따른 구조적, 광학적 특성에 관한 연구를 수행하였다. 일반적으로 ZnO 박막은 한 층을 증착한 후에, 유기물을 제거하기 위하여 전열처리를 수행한다. 본 연구에서는 ZnO 박막을 전열처리와 후열처리를 동시에 단계적으로 수행하였다. X-ray diffractometer, UV-visible spectrometer, photoluminescence를 이용하여 ZnO 박막의 구조적, 광학적 특성을 분석하였다. 모든 시료에서 표면은 직경이 약 20 nm인 둥근 입자들로 이루어져 있었다. X-ray diffraction 패턴은 $31^{\circ}$, $34^{\circ}$, $36^{\circ}$에서 나타났고, 이것은 각각 ZnO의 (100), (002), (101) 방향을 보여준다. 전열처리와 후열처리를 동시에 수행했을 경우, 자유엑시톤 재결합에 의해 3.2 eV에서 좁은 near-band-edge emission 피크가 나타났으며, 투과도 또한 향상되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.210.2-210.2
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• 2014

Recently, molybdenum disulfide (MoS2) nanostructures have been investigated for applications of lithium-ion batteries, solar cell, and gas sensors. In this regard, we have studied atomic and electronic properties of MoS2 nanostructures with adsorbed atoms and molecules using density functional theory calculations. Our calculations reveal that the several atoms such as H, C, N, and F are chemically bound to several sites on the two-dimensional (2D) MoS2 surface. On the other hand, various contamination molecules such as CO, CO2, NO, NO2, and NH3 do not bind to the surface. Next, adsorption of various molecules on the one-dimensional (1D) armchair MoS2 nanoribbon is investigated. Contrary to the case of 2D MoS2 monolayer surface, some molecules (CO and NO) are bound well to the edge of the MoS2 nanoribbon. We find that the molecular states due to adsorption are located near the Fermi level, which makes the band gap narrower. Therefore, we suggest that monolayer MoS2 nanoribbons be used as the gas sensors or detectors.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.576-576
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• 2012

High quality single crystalline strain controlled wurtzite ZnO nanowire arrays have been grown on conductive silicon and ITO substrates by a facile hydrothermal method. The diameter of the nanowires was found to be less than 90 nm approximately for both of the two kinds of substrates. The quality of the ZnO nanowire arrays is dramatically improved by hanging the substrate above from the bottom of the Teflon lined autoclave. The structural investigation indicates the preferential orientation of the nanowire along c-axis. In order to make the convincible comparison, the photoluminescence property of the nanowire arrays grown under different conditions are measured, the sharp near band edge emission from PL, low turn-on voltage ($1.9V/{\mu}m$) from field emission measurement and Fowler-Nordheim plot was investigated from ZnO nanowire arrays grown by proposed substrate hanging method.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.83-83
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• 2011

본 연구에서는 p-type Si (100) 위에 분자선 에피택시 성장방법으로 ZnO 완충층이 삽입된 ZnO 박막을 성장시켰다. ZnO 완충층은 Zn 셀 셔터의 열림/닫힘을 반복하는 성장 멈춤법으로 성장되었다. Zn 셀 셔터의 열림 시간은 4분, 2분, 1분이며 닫힘 시간은 2분으로 동일하게 유지하였다. 이러한 과정은 각각 5, 10, 20회로 반복되었으며 ZnO 완충층을 성장한 후 ZnO 박막은 기존의 분자선 에피택시 방법으로 성장되었다. ZnO 박막의 구조적, 광학적 특성은 field-emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL)로 조사하였다. SEM 측정결과 성장 멈춤 횟수가 증가함에 따라 ZnO 박막의 표면은 섬(island) 구조에서 미로(maze) 구조로 변화하였고, XRD 측정결과 full-width at half-maximum (FWHM) 이 감소하고 결정립 크기(grain size)가 증가하였다. 그리고 PL 측정결과 성장 멈춤 횟수가 증가함에 따라 near-band-edge emission (NBE) 피크의 세기가 증가하였고 deep-level emission (DLE) 피크의 위치는 오렌지 발광에서 녹색 발광으로 청색편이(blue-shift)하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.310-310
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• 2012

ZnO thin films were grown on porous silicon (PS) by plasma-assisted molecular beam epitaxy (PA-MBE). The optical properties of the ZnO thin films grown on PS were studied using room-temperature, low-temperature, and temperature-dependent photoluminescence (PL). The full width at half maximum (FWHM) of the near-band-edge emission (NBE) from the ZnO thin films was 98 meV, which was much smaller than that of ZnO thin films grown on a Si substrate. This value was even smaller than that of ZnO thin films grown on a sapphire substrate. The Huang-Rhys factor S associated with the free exciton (FX) emission from the ZnO thin films was found to be 0.124. The Eg(0) value obtained from the fitting was 3.37 eV, with ${\alpha}=3.3{\times}10^{-2}eV/K$ and ${\beta}=8.6{\times}10^3K$. The low- and high-temperature activation energies were 9 and 28 meV, respectively. The exciton radiative lifetime of the ZnO thin films showed a non-linear behavior, which was established using a quadratic equation.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.131-133
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• 2012

The photoluminescence (PT) properties of Al-doped ZnO thin films grown by the sol-gel dip-coating method have been investigated. At 12 K, nine distinct PL peaks were observed at 2.037, 2.592, 2.832, 3.027, 3.177, 3.216, 3.260, 3.303, and 3.354 eV. The deep-level emissions (2.037, 2.592, 2.832, and 3.027 eV) were attributed to native defects. The near-band-edge (NBE) emission peaks at 3.354, 3.303, 3.260, 3.216, and 3.177 eV were attributed to the emission of the neutral-donor-bound excitons (D0X), two-electron satellite (TES), free-to-neutral-acceptors (e,A0), donor-acceptor pairs (DAP), and second-order longitudinal optical (2LO) phonon replicas of the TES (TES-2LO), respectively. According to Haynes' empirical rule, we calculated the energy of a free exciton (FX) to be 3.374 eV. The thermal activation energy for D0X in the nanocrystalline ZnO thin film was found to be ~25 meV, corresponding to the thermal dissociation energy required for D0X transitions.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.880-884
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• 2011

ZnO nanorods were grown by hydrothermal method. Two kinds of seed layers, Au film and island seed layers were prepared to investigate the effect of seed layer on ZnO nanorods. The ZnO nanorod on Au island seed layer has more unifom diameter and higher density compared to that of ZnO nanorod on Au film seed layer. The ZnO nanorods on Au island seed layer were annealed at various temperatures ranging from 300 to $850^{\circ}C$. The pinholes at the surface of the ZnO nanorods is formed as the annealing temperature is increased. It is noted that the pyramid structure on the surface of ZnO nanorod is observed at $850^{\circ}C$. The intensity of ZnO (002) diffraction peak in X-ray diffraction pattern and intensity of near band edge emission (NBE) peak in photoluminescence (PL) are increased as the ZnO nanorods were annealed at the temperature of $300^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.172-172
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• 2008

By thermal evaporation method, well-aligned ZnO nanowires were synthesized on sapphire substrate at $1000^{\circ}C$ with different oxygen flow rate by using pure ZnO powder (99.999 %). The as-synthesized ZnO nanowires were characterized by field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The well-aligned nanowires are single crystalline in nature and perpendicularly grown along the c-axis. Also the growth rate of nanowires, such as diameter and length, had a tendency to increase as oxygen flow rate increased. Based on the PL measurement of ZnO nanowires, we found that the near band edge of emission redshifted with the increasing intensity of the defect-related green emission in proportion to the increase of oxygen flow rate. "This research was supported by the Korea Research Foundation Grant funded by the Korean Government(MOEHRD)" (The Regional Research Universities Program/Chungbuk BIT Research-Oriented University Consortium).

• Korean Journal of Ichthyology
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• v.26 no.2
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• pp.143-146
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• 2014

A single serranid specimen of Epinephelus radiatus was collected by a hook for the commercial longline fisheries occurred near Marado, Jeju Island, Korea. The present specimen was characterized by five irregular dark brown bands passing downward and forward from upper edge of body, scales in longitudinal row 107, and pored lateral line scales 55. This species is easily distinguishable from the morphologically similar Korean serranid species of E. poecilonotus based on band patterns on body. That is, the former has five irregular oblique dark-edged brown bands, and the latter has several long horizontal bands on lateral body. We propose a new Korean name, "Ma-ra-bari," for Epinephelus radiatus.