• 제목/요약/키워드: Near band edge

검색결과 120건 처리시간 0.029초

Valence Band Photoemission Study of the Kondo Insulator CeNiSn

  • Kang, J.S.;Olson, C.G.;Ouki, Y.
    • Journal of Magnetics
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    • 제2권4호
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    • pp.111-115
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    • 1997
  • The electronic structure of the Kondo insulator CeNiSn has been investigated by using photoemission spectroscopy. A satellite feature is observed in the valence band spectrum about 6 eV below the Ni 3d main peak, indicating a strong Ni 3d Coulomb correlation in CeNiSn. The Ce 4f partial spectral weight exhibits three peak structures, including one due to the 4f1\longrightarrow4f0 transition, another near EF, and the other which overlaps the Ni 3d main peak. We interpret the peak near EF as reflecting mainly the Ce 4f/Sn 5p hybridization, whereas that around the ni 3d main peak as reflecting both the Ce 4f/Ni 3d and Ce 5d/Ni 3d hybridization. Yield measurements across the 4d\longrightarrow4f threshold indicate the Ce valence to be close to 3+. The prominent Fermi edge suggests a metallic ground state in CeNiSn.

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Highly-Dispersive Guided Modes of Two-Dimensional Photonic Crystal Waveguides

  • Kim, Guk-Hyun;Lee, Yong-Hee
    • Journal of the Optical Society of Korea
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    • 제7권1호
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    • pp.38-41
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    • 2003
  • We present an analysis of highly-dispersive guided modes of two-dimensional photonic crystal waveguides. By the plane ave expansion method, band structures and mode profiles of two-dimensional photonic crystal waveguides are obtained. It is found that guided modes have very small group velocities and very large group velocity dispersions in the region near the f-point and in the region near the Brillouin zone edge. Especially, the group velocity dispersions are found to be millions of times larger than that of a conventional optical fiber. The contributions of the transverse resonance formed by two photonic band gap reflectors and the standing wave mode formed by periodic structures are discussed. We conclude that the highly-dispersive characteristics originate from the resonator-like aspect of the photonic crystal waveguide.

Self-Assembled and Alternative Porphyrin-Phthalocyanine Array

  • Kwag, Gwang-Hoon;Park, Eun-Joo;Kim, Sung-Hyun
    • Bulletin of the Korean Chemical Society
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    • 제25권2호
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    • pp.298-300
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    • 2004
  • An alternative molecular porphyrin-phthalocyanine aggregate was prepared and characterized with UV-visible and X-ray absorption spectroscopies. UV-visible experiments evidence 1-dimensional porphyrin-phthalo-cyanine array formed by mixing $SnTPPCl_2 ({\lambda}_{max}=429,\;{\varepsilon}=2.4{\times10^ 5 /M{\cdot}cm)\;and\;NiPc(OBu)_8({\lambda}_{max}=744 nm,\;{\varepsilon}= 2.0{\times}10^ 5 /M{\cdot}cm)$ in solution. In the UV-visible spectrum of the porphyrin-phthalocyanine array, $(SnPNiPc)_n$, a new Q-band appeared at 844 nm with decrease of the Q-band peak of $NiPc(OBu)_8$ at 744 nm. The red-shift of Q-band evidences an alternative porphyrin-phthalocyanine array formed in solution through metal-halide interaction rather than ${\pi}-{\pi}$ facial interaction, in which nickel of $NiPc(OBu)_8$ coordinates with chloride of $SnTPPCl_2$ through self assembly. Ni K-edge XANES (X-ray absorption near edge structure) spectra also support the axial ligation of nickel to chloride. The square planar structure of $NiPc(OBu)_8$ turns to an octahedral structure in (SnPNiPcSnP) by axial ligation. A higher energy-shift (0.2 eV) of the preedge peak of (SnPNiPcSnP) indicaties partial oxidation of nickel by charge transfer from NiPc$(OBu)_8$ to SnTPPCl$_2$.

다단 축류 압축기 정익 흡입면에서의 비정상 경계층 유동 특성 (Flow Characteristics in Unsteady Boundary Layer on Stator Blade of Multi-Stage Axial Compressor)

  • 신유환;;김광호
    • 대한기계학회논문집B
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    • 제28권10호
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    • pp.1210-1218
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    • 2004
  • Experimental study was performed to investigate the flow behavior in boundary layer on the blade suction surface of a multi-stage axial flow compressor, which was focused on the third stage of the 4-stage Low Speed Research Compressor. Flow measurements in the boundary layer were obtained using a boundary layer hot wire probe, which was traversed normal to the blade suction surface at small increments by the probe traverse specially designed. Detailed boundary layer flow measurements covering most of the stator suction surface were taken and are described using time mean and ensemble averaged velocity profiles. Amplitude of the velocity fluctuation and turbulence intensity in the boundary layer flow are also discussed. At midspan, narrow but strong wake zone due to passing wake disturbances is generated in the boundary layer near the blade leading edge for the rotor blade passing period. Corner separation is observed at the tip region near the trailing edge, which causes to increase steeply the boundary layer thickness.

포토닉 밴드갭 광결정의 제작과 선형 및 비선형 광학 특성 연구 (Fabrication and Linear & Nonlinear Optical Characterization of Photonic Crystals)

  • Ha Na Yeong;U Yeon Gyeong;Hwang Ji-Su;Jang Hye-Jeong;Park Byeong-Ju;U Jeong-Won
    • 한국광학회:학술대회논문집
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    • 한국광학회 2002년도 하계학술발표회
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    • pp.162-163
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    • 2002
  • 1-D photonic band-gap structure is identified in a cholesteric liquid crystal system. The optical transmission spectrum is measured and compared with the theoretical analysis. Nonlinear transmission is measured near the band edge. Also 3-D photonic band-gap structures are fabricated from dielectric colloidal polystyrene beads through a centrifuge method. The fabricated photonic crystals exhibit opalescent colors under white light and show a clear diffraction peak dependent on the incident angle of the light beam. Also the scanning electron microscope image was taken to verify the face-centered cubic crystal structure. Bragg's law and Snell's law are employed to describe the position of angle resolved diffraction peaks. It was shown that the optically deduced effective refractive index and lattice constants were in good agreement with the crystal structure identified by scanning electron microscope.

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초박막 Si oxynitride의 스트레스에 의한 계면 열화 메커니즘 (Mechanism for stress-induced interface degradations in ultrathin Si oxynitrides)

  • 이은철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.93-93
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    • 2007
  • We present a mechanism for stress-induced interface degrdadations through ab initio pseudopotential calculations. We find that N interstitials at the interface create various defects levels in the Si band gap, which range from the mid gap to the conduction band of Si. The level positions are dependent on the configuration of oxygen toms around the N interstitial. On the other hand, the mid-gap level caused by Pb center is possibly removed by substitution of a N atom for a threefold-coordinated Si atom in the defect. Our calculations explain why interface state generations are enhanced in Si oxynitride, especially near conduction band edge of Si, although densities of Pb center are reduced.

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Numerical Simulation of Edgetone Phenomenon in Flow of a Jet-edge System Using Lattice Boltzmann Model

  • Kang, Ho-Keun
    • Journal of Ship and Ocean Technology
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    • 제12권1호
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    • pp.1-15
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    • 2008
  • An edgetone is the discrete tone or narrow-band sound produced by an oscillating free shear layer, impinging on a rigid surface. In this paper, 2-dimensional edgetone to predict the frequency characteristics of the discrete oscillations of a jet-edge feedback cycle is presented using lattice Boltmznan model with 21 bits, which is introduced a flexible specific heat ratio y to simulate diatomic gases like air. The blown jet is given a parabolic inflow profile for the velocity, and the edges consist of wedges with angle 20 degree (for symmetric wedge) and 23 degree (for inclined wedge), respectively. At a stand-off distance w, the edge is inserted along the centerline of the jet, and a sinuous instability wave with real frequency is assumed to be created in the vicinity of the nozzle exit and to propagate towards the downward. Present results presented have shown in capturing small pressure fluctuating resulting from periodic oscillation of the jet around the edge. The pressure fluctuations propagate with the speed of sound. Their interaction with the wedge produces an irrotational feedback field which, near the nozzle exit, is a periodic transverse flow producing the singularities at the nozzle lips. It is found that, as the numerical example, satisfactory simulation results on the edgetone can be obtained for the complex flow-edge interaction mechanism, demonstrating the capability of the lattice Boltzmann model with flexible specific heat ratio to predict flow-induced noises in the ventilating systems of ship.

이동도갭 상태들의 수소화된 비결정 실리콘 전계효과 트랜지스터 성능에 대한 영향 (Effects of Mobility-Gap States on the Performance of a-Si:H Field-Effect Transistors)

  • 제갈장
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 추계학술대회 논문집
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    • pp.52-57
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    • 1995
  • An accurate and efficient single-integral semi-numerical model is developed and applied to analyse effects of localized electronic states in the mobility gap on the drain-current versus gale-voltage characteristics of hydrogenated amorphous field-effect transistors. It is shown that the low-density deep-gap states distributed in the midgap also sensitively and largely influence the device electronic performance as well as well as the large-density tail states distributed near the conduction band edge.

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Hole-Trapping in Iodine-Doped Pentacene Films at Low Temperatures

  • Yun, W.J.;Cho, J.M.;Lee, J.K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.70-73
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    • 2006
  • Pentacene films, grown on polyethylene terephthalate (PET) substrates, were doped with Iodine. ESR measurements were made for the films in the temperature range of 100-300 K. Two regimes of doping stages were discernible: a light (intercalation) doping regime and a heavy doping regime. The light doping regime was concluded to be dominated by localized holes that were trapped at low temperatures, which indicated trap states near the valence band edge.

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실리콘 숏키장벽의 이온선 에칭의 영향 (Influence of Ion Beam Etching on Silicon Schottky Barriers)

  • Wang, Jin-Suk
    • 대한전기학회논문지
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    • 제35권2호
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    • pp.62-66
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    • 1986
  • Ion beam etching of silicon with N2 and Ar gas has been found to cause the band edge to bend downward near the surface in p-type silicon. Rectifying, rather than ohmic contacts are obtained on the structures formed by evaporation of gold and titanium onto ion-bean-etched p-type silicon. The 1/C2 versus V relationship measured at 1MHz is found to be nonlinear for small voltages indicating alteration of the effective doping colse to the silicon surface.

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