• 한국광학회지
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• 제10권4호
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• pp.301-305
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• 1999

Czocharlski pulling method에 의해 성장된 새로운 광학결정 YCOB($YCa_4O(BO_3)_3$)의 파장에 따른 위상 정합 조건을 제시하였으며, Nd:YAG 레이저의 1064nm의 출력을 기본파로 하였을 때 제2조화파 발생 효율을 조사하였다. 또한 $Yb^{3+}$이온과 $Nd^{3+}$ 이온이 도핑된 YCOB의 제2조화파 발생효율을 조사하여 희토류 이온 도핑에 따른 비선형성의 변화를 조사하였다.

• 자원리싸이클링
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• 제16권5호
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• pp.46-50
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• 2007

[ $Eu^{2+},\;Nd^{3+}$ ]로 도핑된 $CaAl_2O_4$ 청색 형광체를 고상반응법으로 제조하였다. 1 mol% $Eu^{2+}$로 doping된 형광체에 다양한 조성의 $Nd^{3+}$를 co-doping함에 따라 고휘도, 장잔광 특성을 보였다. 제조한 형광체에 대하여 XRD, SEM, TEM, 빛발광 특성을 조사하였다. $CaAl_2O_4:Eu^{2+}:Nd^{3+}$의 넓은 밴드의 UV로 여기된 빛발광 특성이 $Eu^{2+}$의 $4f^65d^1$에서 $4f^7$ 상태로 천이에 의해 기인된 청색영역(${\lambda}_{max}=440\;nm$)에서 관찰되었다. $Nd^{3+}$로 co-doping한 형광체는 여기광을 차단하였을 때 장잔광 발광 특성을 나타내었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.119.1-119.1
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• 2007

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제25회 학술발표회 초록집
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• pp.102-102
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• 2003

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.294-294
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• 2007

• 대한화학회지
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• 제50권3호
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• pp.232-236
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• 2006

형광체의 특성을 향상시키기 위하여 Y1.99-xMxCe0.01SiO5(M=Li, La, Nd, and Gd)를 환원분위기에서 1350oC, 10시간동안 고상반응법으로 합성하였다. 상용품인 청색 형광체와 비교를 했을 때, 다양한 원소를 치환한 Y2SiO5:Ce 청색 형광체의 발광 특성이 우수 하다는 것을 관찰 할 수 있었다. 특히, 1mol%의 Li 이온이 도핑된 Y2SiO5:Ce 청색 형광체의 광 발광 특성이 가장 높았다. Y2SiO5:(Ce,Li) 청색 형광체의 입도형상을 주사전자현미경으로 분석한 결과, 입자의 크기가 약 3m인 유사구형임을 확인하였다.

• 한국세라믹학회지
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• 제29권11호
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• pp.851-854
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• 1992

It was grown ZrO2:10 mol% Y2O3 single crystals doped with 1 wt% of rare earth metal ion (Ce, Pr, Nd, Er, Eu) by Skull Method. Grown crystals showed Ce:orange-red, Pr:golden-yellow, Nd:lilac, Er:pink, Eu:light pink due to dopant effect. It was examined color centers in light absorption pattern of visible region (λ= 300~700 nm); in as grown samples, absorption by Ce4+, (Pr4+, Pr3+), Nd3+, Er3+, Eu3+ ions were important, and in samples after vacuum annealing, decrease of absorption by Pr4+ ion and increase of absorption by Pr3+ ion was important, and absorption by Ce3+, Eu2+ was important due to reduction of activator.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.71-74
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• 1998

$Er^{3+}$ doped $NdF_{3}$ single crystalline thin films with smooth, microcrack-free, and high-crystalline quality were grown on $CaF_{2}(111)$ substrate at $500^{\circ}C$by molecular beem epitaxy(MBE). The relation-ship between subcell and supercell showing the reconstructed $3^{1/2} \times 3^{1/2}$ structure was studied by reflection high-energy electron diffraction(RHEED) investigation. The film surface and the growth mode were examined in studied by RHEED patterns and atomic force microscope(AFM) images ex situ. The crystallinity of film and the lattice mismatch between $NdF_{3}Er}^{3+}(0002)$ film and $CaF_{2}(111)$ substrate depending in the $Er^{3+}$ concentration were investigated by X-ray rocking curve analysis.

• Journal of Magnetics
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• 제18권3호
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• pp.240-244
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• 2013

The influences of Gallium doping on the magnetic microstructures and corrosion behaviors of Nd-Fe-B-Ti-C alloys are investigated. The cooling rate for obtaining fully amorphous structure is raised, and the glassforming ability is improved by the Ga addition. The High Resolution Transmission Electron Microscopy image shows that the ${\alpha}$-Fe and $Fe_3B$ soft magnetic phases become granular surrounded by the $Nd_2Fe_{14}B$ hard magnetic phase. The rms and $({\Delta}{\varphi})_{rms}$ value of Nd-Fe-B-Ti-C nanocomposite alloy thick ribbons in the typical topographic and magnetic force images detected by Magnetic Force Microscopy(MFM) decreases with 0.5 at% Ga addition. The corrosion resistances of $Nd_9Fe_{73}B_{12.6}C_{1.4}Ti_{4-x}Ga_x$ (x = 0, 0.5, 1) alloys are enhanced by the Ga addition. It can be attributed to the formation of more amorphous phases in the Ga doped samples.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.54-54
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• 2008

$Eu^{2+}$, $Nd^{3+}$ co-doped $BaAl_2O_4$ are known as a long afterglow phosphor. We found that $Eu^{2+}$-doped $BaAl_2O_4$ showed ptotoconductivity in the range of UV and visual light. In this study, $BaAl_2O_4$:Eu thin film has been prepared by RF sputtering method and a sensing characteristics to UV and visual light was performed. Only $Eu^{2+}$ and $Nd^{3+}$ co-doped $BaAl_2O_4$ powders and targets for deposition were prepared by a convention solid state method, and the deposition was performed in a reducing $H_2$-Ar mixture gas on Si substrates. The observation of crystalline phase and morphology of the sputtered film were performed using XRD, EDX. The photoluminescence and photocurrent to UV and visual light were measured simultaneously using 300W-Xe solar simulator as a light source. It was confirmed that the photocurrent induced by irradiation of light showed a linear relationship to the light intensity.