• The Journal of Korean Academy of Prosthodontics
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• v.51 no.3
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• pp.167-174
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• 2013

Purpose: This study was conducted to evaluate the roughness and surface alternations of three differently blasted titanium discs treated by $Nd:YVO_4$ Laser irradiation in different conditions. Materials and methods: Thirty commercially pure titanium discs were prepared and divided into three groups. Each group was consisted of 10 samples and blasted by $ZrO_2$ (zirconium dioxide), $Al_2O_3$ (aluminum oxide), and RBM (resorbable blasted media). All the samples were degreased by ultrasonic cleaner afterward. Nine different conditions were established by changing scanning speed (100, 300, 500 mm/s) and repetition rate (5, 15, 35 kHz) of $Nd:YVO_4$ Laser (Laser Pro D-20, Laserval $Korea^{(R)}$, Seoul, South Korea). After laser irradiation, a scanning electron microscope, X-ray diffraction analysis, energy dispersive X-ray spectroscopic analysis, and surface roughness analysis were used to assess the roughness and surface alternations of the samples. Results: According to a scanning electron microscope (SEM), titanium discs treated with laser irradiation showed characteristic patterns in contrast to the control which showed irregular patterns. According to the X-ray diffraction analysis, only $Al_2O_3$ group showed its own peak. The oxidation tendency and surface roughness of titanium were similar to the control in the energy dispersive X-ray spectroscopic analysis. The surface roughness was inversely proportional to the scanning speed, whereas proportional to the repetition rate of $Nd:YVO_4$. Conclusion: The surface microstructures and roughness of the test discs were modified by the radiation of $Nd:YVO_4$ laser. Therefore, laser irradiation could be considered one of the methods to modify implant surfaces for the enhancement of osseointegration.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1368-1371
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• 2007

Laser-ablated ITO patterns showed the formation of shoulders at the edge of the ITO lines and a ripple-like structure of the etched bottom. When the laser ablation was applied in the fabrication of PDP panel, the laser-ablated ITO patterns showed a higher sustaining voltage than that of chemically wet-etched ITO.

• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.249-250
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• 2009

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.8-12
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• 2008

For the reduction of fabrication cost and process time of AC plasma display panel (PDP), indium tin oxide (ITO) layer was patterned as bus electrode using Nd:$YVO_4$ laser. In comparison with the chemically wet etched ITO patterns, laser ablated ITO patterns showed the formation of shoulders and ripple-like structures at the edge of the ITO lines. For the reduction of shoulders and ripple-like structures, pulse repetition rate and scan velocity of laser was changed. In addition, we analyzed a discharge characteristic of PDP test panel to observe how the shoulders and ripple-like structures influence on the PDP. Based on experimental results, the pattern etched at the 500 mm/s and 40 kHz was better than any other condition. From this experiment we could see the possibility of the laser direct patterning for the application to the patterning of ITO in AC-PDP.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.11
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• pp.1765-1771
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• 2010

In the case of micro.electro-mechanical system (MEMS) devices, the quality of punched via hole is one of the most important factors governing the performance of the device. The common features that affect the laser micromachining of via holes drilled by using Nd:$YVO_4$ laser are described, and efficient optimization methods to measure them are presented. The analysis methods involving an orthogonal array, analysis of variance (ANOVA), and response surface optimization are employed to determine the main effects and to determine the optimal laser process parameters. The significant laser process parameters were identified and their effects on the quality of via holes were studied. Finally, an experiment in which the optimal levels of the laser process parameters were used was carried out to demonstrate the effectiveness of the optimization method.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.59-62
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• 2013

At an infra-red (IR) wavelength of 1,064 nm, a diode-pumped Q-switched $Nd:YVO_4$ laser was used for the direct patterning of various transparent conductive oxide (TCO) thin films on glass substrate. With various laser beam conditions, the laser ablation results showed that the indium tin oxide (ITO) film was removed completely. In contrast, zinc oxide (ZnO) film was not etched for any laser beam conditions and indium gallium zinc oxide (IGZO) was only ablated with a low scanning speed. The difference in laser ablation is thought to be due to the crystal structures and the coefficient of thermal expansion (CTE) of ITO, IGZO, and ZnO. The width of the laser-patterned grooves was dependent on the film materials, the repetition rate, and the scanning speed of the laser beam.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.76-79
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• 2005

$Nd:YVO_4$ 연속발진 레이저(CW laser:Continuous wave laser)로 제작한 다결정 실리콘 박막의 이온도핑 효과를 조사하였다. PECVD로 증착한 비정질 실리콘 박막을 CW 레이저를 조사하여 결정화한 후 $B_2H_6$ 플라즈마 이온 도즈량을 변화시켜 이온 도핑을 하고 급속열처리 방법과 퍼니스 어닐링 방법으로 도펀트 활성화를 하였다. 이온 도핑된 CW 다결정 실리콘 박막의 이온 도즈량에 따른 판저항 변화를 비교하고, 급속열처리(RTA: Rapid Thermal Annealing)와 퍼니스 어닐링(FA: Furnace Annealing) 전후의 결정성 변화를 라만 스펙트럼(Raman spectrum) 을 통하여 분석하였다. 이온 도즈량이 증가함에 따라 판저항은 감소하고, 어닐링 후 이온 도핑에 의해 손상된 박막이 복원됨을 확인 할 수 있다.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.72-76
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• 2019

A Q-switched diode-pumped neodymium-doped yttrium vanadate (YVO₄, λ =1064nm) laser was used for the direct patterning of indium tin oxide (ITO) films on glass substrate. During the laser direct patterning, the laser beam was incident on the two different directions of glass substrate and the laser ablated patterns were compared and analyzed. At a low scanning speed of laser beam, the larger laser etched lines were obtained by laser beam incident in reverse side of glass substrate. On the contrary, at a higher scanning speed, the larger etched pattern sizes were found in case of the beam incidence from front side of glass substrate. Furthermore, it was impossible to find no ablated patterns in some laser beam conditions for the laser beam from reverse side at a much higher scanning speed and repetition rate of laser beam. The laser beam is expected to be transferred and scattered through the glass substrate and the laser beam energy is thought to be also dispersed and much more influenced by the overlapping of each laser beam spot.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.245-245
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• 2010

This paper and the rear passivation experiment was local back surface field Nd:$YVO_4$ green laser and the experiment was used performed to screen printing. Laser power 100%, with a fixed frequency for 60kHz Current of 29A and 30A were tested in two conditions. The point contact distances of 0.2mm, 0.4mm, 0.6mm, 0.8mm and 29A and 30A current conditions, it was found that is suitable for 0.4mm.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.938-940
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• 2003

고출력 반도체 레이저(500mW)의 출력광 파장 809nm과 반도체 레이저로 여기되는 Nd:YVO4레이저의 출력광 파장 1064nm를 공진기 내부에서 비선형 광학 소자인 KTP(Potassium titanyl posphate : KTPiOPO$_4$)를 사용하여 합주파 발생 실험을 행하여 459nm의 청색레이저를 얻었다. 제2의 위상 정합 정합조건($\psi$=90$^{\circ}$, $\theta$=90$^{\circ}$)에서 반도체 레이저의 입력광 세기가 400mW일 때 청색레이저의 최대 출력 0.95mW를 얻었으며, 청색레이저의 발진문턱입력 세기는 120mW이었다.