• Electronics and Telecommunications Trends
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• v.36 no.6
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• pp.36-45
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• 2021

As the global demand for satellite IoT services using small satellites increases, interest in their frequency requirements has also increased. Consequently, International Telecommunication Union Radiocommunication Sector (ITU-R) preparatory studies for WRC-23 include AI 1.18, which considers new frequency allocations for narrowband mobile satellites. This agenda item was issued in accordance with Resolution 284 (WRC-19), and contributions and reviews by government and satellite operators are underway at ITU-R SG4 WP4C with the aim of completing the study in 2023. Resolution 248 (WRC-19) considers the conditions for transmission of candidate bands and satellites and terminals for narrowband mobile satellite, and all contributions should satisfy narrowband mobile satellite system characteristics parameters within these conditions. However, among the current transmission specifications, there are several views on the exact definition of satellite e.i.r.p., and the derivation schedule of characteristic system parameters for the study is slower than that of the original work schedule. The goal of this paper is to examine the outline of WRC-23 AI 1.18 and the main content of Resolution 284 (WRC-19) and to determine the status of studies related to WRC-23 AI 1.18. The ITU-R's study on this agenda includes updating work schedules, developing the draft required spectrum and system characteristics parameter reports/recommendations, developing draft CPM reports, and examining the various views of transmission specifications in Resolution 284 (WRC-19). Focusing on candidate bands in Region 1 (Europe and Africa) and Region 2 (America), the current status of use in Korea is investigated and future countermeasures in Korea are investigated. In addition, we would like to examine the trend of narrowband mobile satellite through satellite frequency and service status and planning of satellite IoT operators, such as EchoStar, Omnispace, and Sateliot that are participating in the ITU-R study.

• Journal of Korea Foundry Society
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• v.39 no.1
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• pp.7-13
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• 2019

Few studies of large blooms over 700 mm thick among those used for the forging of raw materials have been reported. The cooling rate difference between the surface and the center of a large bloom is large, and the degradation of the mechanical properties is likely in cases involving excessively coarse precipitates resulted from the slow cooling rate of a large bloom after casting. Therefore, a schematic investigation of the growth behaviors of precipitates while varying their locations in blooms is necessary. The dissolution behaviors of precipitates were investigated by simulating a reheating process during which the bloom is heated to a high temperature. The segregation behavior of the as-cast large bloom was also investigated. Reheating specimens were obtained after an isothermal heat treatment at $1150^{\circ}C$ with various holding times to simulate the reheating process, with the samples undergoing a subsequent water quenching step. The precipitates were extracted using an electrolytic extractor and a particle size analysis was conducted with the aid of SEM, EDS, and TEM. In the present work, Al oxide, MnS and Nb carbide were mainly observed.

• Korean Journal of Materials Research
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• v.29 no.3
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• pp.175-182
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• 2019

This study examines paraelectric $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN), which has no hysteresis and high dielectric strength, for energy density capacitor applications. To increase the breakdown dielectric strength of the BZN film further, poly(vinylidene fluoride) BZN-PVDF composite film is fabricated by aerosol deposition. The volume ratio of each composition is calculated using dielectric constant of each composition, and we find that it was 12:88 vol% (BZN:PVDF). To modulate the structure and dielectric properties of the ferroelectric polymer PVDF, the composite film is heat-treated at $200^{\circ}C$ for 5 and 30 minutes following quenching. The amount of ${\alpha}-phase$ in the PVDF increases with an increasing annealing time, which in turn decreases the dielectric constant and dielectric loss. The breakdown dielectric strength of the BZN film increases by mixing PVDF. However, the breakdown field decreases with an increasing annealing time. The BZN-PVDF composite film has the energy density of $4.9J/cm^3$, which is larger than that of the pure BZN film of $3.6J/cm^3$.

• Tribology and Lubricants
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• v.40 no.3
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• pp.97-102
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• 2024

The next-generation Molten Salt Reactor is known for its high safety because it uses nuclear fuel dissolved in high-temperature molten salt, unlike traditional solid atomic fuel methods. However, the high-temperature molten salt causes severe corrosion in internal structural materials, threatening the reactor's safety. Therefore, it is crucial to investigate the high-temperature corrosion resistance and wear performance of materials used in reactors to ensure safety. In this study, the high-temperature corrosion resistances and wear performances of corrosion samples in a NaCl-MgCl2-KCl (20-40-40 [wt%]) molten salt are investigated to evaluate the applicability of economically viable stainless steels, 316SS and 304SS. Hastelloy C276 and a new alloy containing a small amount of Nb are used as reference samples for comparative analysis. The mass loss, mass loss rate per unit volume, and surface roughness of each sample are measured to understand the corrosion mechanisms. Scanning electron microscopy and energy-dispersive spectroscopy analyses are employed to analyze the corrosion mechanisms. Wear tests on the corroded samples are also conducted to assess the extent of corrosion. Based on the experimental results, we predict the lifespans of the materials and evaluate their suitability as candidate materials for molten salt reactors. The data obtained from the experiments provide a valuable database for structural materials that can enhance the stability of molten salt reactors and recommend high-temperature corrosion-resistant materials suitable for next-generation reactors.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• The Journal of the Petrological Society of Korea
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• v.12 no.3
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• pp.119-134
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• 2003

Yuksipryeong two-mica granite presents strongly peraluminous characteristics in both mineralogy and geochemistry. It has high aluminum saturation index with 1.15∼l.20 and high corundum with 2.20∼2.98 wt% CIPW norm. As the color index is <16% and FeO$\^$T/+ MgO + TiO$_2$is average 1.9 wt％, it corresponds to leucogranite. Yuksipryeong two-mica leucogranite shows negative linear trend for TiO$_2$, Al$_2$O$_3$, FeO, Fe$_2$O$_3$, MgO, CaO, K$_2$O, P$_2$O$\_$5/, Rb, Ba, and Sr as SiO$_2$increases, and the positive relation of Zr and Th, which result from feldspar, biotite, apatite and zircon fractionation. Pegmatitic dike has higher SiO$_2$and P$_2$O$\_$5/, but lower another major elements. Yuksipryeong two-mica leucogranite has lower Rb, but higher Ba and Sr than Manaslu, Hercynian two-mica leucogranites, and S-type granites in Lachlan Fold Belt. Pegmatitic dike has higher Rb and Nb but lower Ba, Sr, Zr, Th, and Pb contents than Yuksipryeong two-mica leucogranite, resulting in removing or mobilizing for some trace elements from the granitic melt. Yuksipryeong two-mica leucogranite has total REEs with 95.7∼l23.3 ppm, and chondrite-normalized REE pattern is very steep ((La/Yb)$\_$N/ = 6.9∼24.8), light REEs (LREEs)-enriched End heavy REEs (HREEs)- depleted pattern with low to moderate Eu anomalies (Eu/Eu＊= 0.7∼0.9). While pegmatitic dike has low total REEs with 7.0 ppm, and chondrite-normalized REE pattern is flat-pattern ((La/Yb)$\_$N/ = 2.1) with strong negative Eu anomalies (Eu/Eu＊= 0.2). The melt compositions having formed two-mica leucogranites depend on not only the source rock but also the amounts of the residual remaining after melting of source rocks. The CaO/Na$_2$O and Rb/Sr-Rb/Ba ratios depend mainly on the composition of source rocks in the strongly peraluminous granite, that is, plagioclase/clay ratio of the source rocks. Yuksipryeong two-mica leucogranite has higher CaO/Na$_2$O and lower Rb/Sr-Rb/Ba ratios than Manaslu and Hercynian two-mica leucogranites (Millevaches and Gueret) derived from clay-rich, plagioclase-poor (polite), which suggest that the probable source rocks for Yuksipryeong two-mica leucogranite is clay-poor, plagioclase-rich quartzofeldspathic rocks. As the concentrations of Al$_2$O$_3$remain nearly constant but those of TiO$_2$increases as increasing temperature in the strong peraluminous melt, the Al$_2$O$_3$/TiO$_2$ratio may reflect relative temperature at which the melts have formed. Comparing the polite-derived Manaslu and Hercynian two- mica leucogranites, Manaslu two-mica leucogranite has higher Al$_2$O$_3$/TiO$_2$ratio than latter, and its melt have formed at relatively lower temperature ($\leq$ 875$^{\circ}C$) than Hercynian two-mica leucogranites. Likewise, comparing the quartzofeldspathic rock-derived granites, Yuksipryeong two-mica granite has higher Al$_2$O$_3$/TiO$_2$, ratio than S-type granites in Lachlan Fold Belt (>875$^{\circ}C$). The melt formed Yuksipryeong two-mica leucogranite are considered to have been formed at temperature at below the maximum 875$^{\circ}C$C$.

• The Journal of the Petrological Society of Korea
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• v.15 no.2 s.44
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• pp.60-71
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• 2006

The Seokmodo consists mainly of biotite granite and granodiorite. The biotite granite is divided into the south and the north part by granodiorite. There occurs high temperature hot spring of which temperature is up to $72^{\circ}C$. The Rb-Sr isotopic data for the biotite granite define whole-rock isochron ages of $207{\pm}70$ Ma with initial Sr isotopic ratio of 0.7132 in north part and $132{\pm}50$ Ma with initial Sr isotopic ratio of 0.7125 in south part, suggesting that the magma be derived from the crustal source material. The geochemical characteristics of the biotite granite and hornblende granodiorite indicate that they were crystallized from calc-alkaline under syn-collisional tectonic environment. The samples of hot spring were collected at March 2005 and March 2006. The $^{87}Sr/^{86}Sr$ ratios of hot spring are 0.714507 and 0.714518, respectively and correspond to those oi the granite being occurred at the south part. The similarity of $^{87}Sr/^{86}Sr$ ratios between the granite and hot spring strongly suggests that the hot spring might be derived from the Seokmodo biotite granite.

• Korean Journal of Materials Research
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• v.11 no.1
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• pp.27-33
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• 2001

The growth characteristics of 4-fold grain which was appeared in KLN deposition on $Pt/Ti/SiO_2/Si(100)$ substrate was studied by varying process variables. Substrate temperature, sputtering pressure, rf power were selected as process variables, and experiment was carried out near optimum fabrication condition. When using K and Li enriched target, the optimum fabrication conditions were substrate temperature of $600^{\circ}C$, sputtering pressure of 150mTorr, rf power of 100 W and its surface morphology is sensitively varied by small deposition condition changes. KLN is composed of elements which have large difference of boiling point. And it is difficult to fabricate thin film at high temperature and high vacuum deposition condition. Furthermore the phenomenon during deposition process can not be explained by using Thorton's model which explains the relation between thin film structure and melting point of thin film materials. These phenomenon can be explained using boiling point of elements which consist of thin film material.

• Journal of Mushroom
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• v.11 no.2
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• pp.53-62
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• 2013

A total of 35 phosphate solubilizing bacterial strains were isolated from waste mushroom bed of Agaricus bisporus in Buyeo-Gun, Chungnam and screened for the production of indole acetic acid (IAA). The best IAA producing strain was identified as Pantoea rodasii using 16S rRNA analysis. In addition to the IAA production, this strain could act as an efficient phosphate solubilizer (1100 ${\mu}g$ $ml^{-1}$ after 5 days of incubation) also. The selected strain was cultured under different conditions in order to assess the optimum conditions for maximum IAA production. The nutrient broth (NB) medium was recorded as the best medium, where the maximum IAA production (229 ${\mu}g$ $ml^{-1}$) was recorded at the start of stationary phase (12 hours after inoculation) of the bacteria growth. The performance of the strain was found to be maximum at the temperature of $30^{\circ}C$ followed by $25^{\circ}C$. IAA production was found to be increased with increasing tryptophan concentration (from 0.1 to 0.6%), however beyond this limit, a slight reduction in IAA production was observed. The strains' ability to produce IAA was further confirmed by extraction of crude IAA and subsequent TLC analysis. A specific spot from the extracted IAA preparation was found corresponding with the standard spot of IAA with same $R_f$ value. The results of HPLC analysis conducted in identifying and quantifying the IAA production more precisely, are in agreement with the results of the assessment done with colorimetric method. As revealed by the results of the pot experiment, the isolated strain could significantly enhance the growth (as measured by shoot and root growth) of mung bean plants compared to that of non-inoculated plants. Therefore it can be concluded that the present strain, Pantoea rodasii has great potential to be used as bio-inoculants.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.63-68
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• 2019

Dielectric and piezoelectric properties of PIN-PMN-PT piezoelectric single crystals with variation of temperature and compressive stress were investigated. The crystal phase of the single crystal was changed from the ferroelectric rhombohedral structure to tetragonal structure in the 110℃ region and from the tetragonal structure to the paraelectric cubic structure in the 190℃ region. The piezoelectric constant and relative dielectric constant were calculated from the rate of change of polarization and displacement with the application of electric field, which was similar to the value measured from the instrument. As the compressive stress applied to the sample increased, the piezoelectric constant d₃₃ and relative dielectric constant values tended to increase. When the compressive stress applied to the sample at 5℃ was 60 MPa, the d₃₃ was calculated as 4,500 pC/N. At 60℃, the relative dielectric constant of 62000 was calculated when the compressive stress applied to the sample was 40 MPa. The increase in piezoelectric constant and relative dielectric constant when the compressive stress increased could be attributed to the phase transition from the rhombohedral structure to orthorhombic.