• Journal of the Korean Mathematical Society
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• v.47 no.6
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• pp.1183-1196
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• 2010

Some annulus oscillation criteria are established for the second order damped elliptic differential equation $$\sum\limits_{i,j=1}^N D_i[a_{ij}(x)D_jy]+\sum\limits_{i=1}^Nb_i(x)D_iy+C(x,y)=0$$ under quite general assumption that they are based on the information only on a sequence of annuluses of $\Omega(r_0)$ rather than on the whole exterior domain $\Omega(r_0)$. Our results are extensions of those due to Kong for ordinary differential equations. In particular, the results obtained here can be applied to the extreme case such as ${\int}_{\Omega(r0)}c(x)dx=-\infty$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.3C
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• pp.224-232
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• 2012

Priority MAC is an important issue in every communication system when we consider differentiated service applications. In this paper, we propose a mechanism to support priority MAC based on multi-parameters for IEEE 802.15.7 visible light communication (VLC). By using three parameters such as number of backoff times (NB), backoff exponent (BE) and contention window (CW), we provide priority for multi-level differentiated service applications. We consider beacon-enabled VLC personal area network (VPAN) mode with slotted version for random access algorithm in this paper. Based on a discrete-time Markov chain, we analyze the performance of proposed mechanism under non-saturation environments. By building a Markov chain model for multi-parameters, this paper presents the throughput and transmission delay time for VLC system. Numerical results show that we can apply three parameters to control the priority for VLC MAC protocol.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.25-28
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• 1993

In this study, the dielectric properties of (Sr$\sub$1-x/Ca$\sub$x/)TiO$_3$+yNb$_2$O$\sub$5/(0.1 x 0.3, 0.004 y 0.008) ceramic capacitor were investigated. The specimen was sintered for 3hr at 1350$^{\circ}C$ in gas(N$_2$) atmosphere. The reduced specimen fared at 1200$^{\circ}C$ in air. The used specimens had the apparent permittivity of 3${\times}$10$^4$∼4${\times}$10$\^$5/, tan$\delta$ of 0.05 -0.2, and insulating resistance of 10$\sub$9/∼10$\^$12/ $\Omega$.cm. The specimens had the stable temperature coefficient of capacitance.

• Proceedings of the KWS Conference
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• 1995.10a
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• pp.208-211
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• 1995

Five cast gamma titanium aluminides, Ti-45~48%Al-2%Nb-2%Cr (nominal composition in at. %), were laser welded and their weld cracking susceptibilities were evaluated. Laser power, traversing rate and preheat temperature were systematically varied to generate a series of welds exhibiting a wide range of cooling rate ($100^{\circ}C/s-10,000^{\circ}C/s$). As Al content increased and the weld cooling rate decreased, solidification cracking susceptibility increased while solid-state cracking susceptibility decreased. Through laser beam energy input control and preheat, it was determined possible to produce high quality laser welds.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1521-1523
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• 2001

In this paper, High quality factor and fine dielectric loss was resulted on specimen added 0.5wt% $MnO_2$ after compared and analyzed dielectric and piezoelectric properties following that added each 0 $\sim$ 0.9wt% of $Fe_2O_3$, $Nb_2O_5$, and $MnO_2$ on dopant at PSN-PT in two material disposition ceramics with research still is not completed to material investigation to increase high power piezoelectric actuator device efficiency. And, a measuring method and the experimental results of the temperature rise under the high vibrational velocity are also described.

• Journal of the Korean Ceramic Society
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• v.15 no.3
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• pp.140-148
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• 1978

The piezoelectric properties of some perovskite ferroelectric materials have been investigated. The Curie temperature of $Nb^{+5}$ deped $BaTiO_3$ is lowered, and that of $La^{+3}$ doped BaTiO3 varies depending on whether the ionic neautrality of the ceramics is satisfied. The optimum sintered density of BaTiO3 system is obtained when the specimen is sintered for about an hour at 1300-140$0^{\circ}C$ (the optimal sintering temperature of PZT is also about 130$0^{\circ}C$). The electromechanical coupling factor of PZT is reported to be larger than that of $BaTiO_3$ system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.6-6
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• 2010

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode (Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition temperature. The crystallinity of SBN thin films were increased with increase of deposition temperature in the temperature range of 100~400[$^{\circ}C$]. The surface roughness of deposition temperature($300^{\circ}C$) showed about 4.33[nm]. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.323-323
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• 2010

PNN-PZT계 세라믹스를 $Pb(Ni_{1/3}Nb_{2/3})_{0.4}(Zr_{0.48}Ti_{0.52})_{0.6}O_3$ 조성으로 설계하고, 이에 낮은 융점의 NiO를 1wt% 첨가하여 저온소결 특성을 평가하였다. 일반적인 세라믹 분말 소결법을 이용하여 시편을 제작하였으며, 이때의 소결온도는 $850{\sim}105^{\circ}C$ 범위에서 변화시켰다. 소결체의 압전 및 유전적 특성을 평가를 하고. SEM 및 XRD를 이용한 미세구조 및 상 분석도 수행하였다. 이러한 실험 결과, PNN-PZT 세라믹은 NiO의 첨가로 $1000^{\circ}C$ 정도에서도 저온소결이 가능한 것을 확인하였다.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.29-32
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• 2000

Meta1-ferroelectric-insulator-semiconductor(MFIS) devices using Pt/LiNbO$_{3}$/AIN/Si structure were successfully fabricated. AIN thin films were made into metal-insulator-semiconductor(MIS) devices by evaporating aluminum in a dot array on the film surface. The dielectric constant of the AIN film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V ) characteristic is 8. The gate leakage current density of MIS devices using a aluminum electrode showed the least value of 1$\times$10$^{-8A}$ $\textrm{cm}^2$ order at the electric field of 500㎸/cm. A typica] value of the dielectric constant of MFIS device was about 23 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 500㎸/cm was about 5.6$\times$ 10$^{13}$ $\Omega$.cmcm

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.05a
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• pp.563-567
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• 2004

In this paper, a remote temperature sensor based on surface acoustic wave is introduced and the issues on design, manufacturing, and test of the sensor are addressed. SAW sensors having single and double electrode are prepared on the 128$^{\circ}$ YX-LiNbO$_3$ Substrate. The frequency responses of SAW sensors on the temperature change are compared. To measure the change of center frequency, two center frequencies on the 3dB and 20dB are measured and compared. Since the center frequency on the temperature change from -30$^{\circ}C$ to 80$^{\circ}C$ is linearly changed, the SAW sensor is applicable to the temperature sensor.