• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.16-16
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• 2010

The multilayer piezoelectric transformer was manufactured using $Pb(Zn_{1/2}W_{1/2})O_3-Pb(Mn_{1/3}Nb_{2/3})O_3-Pb(Zr_{0.48}Ti_{0.52})O_3$ (abbreviated as PZW-PMN-PZT) ceramics and their electrical properties were investigated. The $k_{eff}$ of the input and the output calculated from the resonant and anti-resonant frequencies were 0.403 and 0.233, respectively. The voltage step-up ratio showed the maximum value in the vicinity of 81kHz. The multilayer piezoelectric transformer showed the temperature rise of about $36^{\circ}C$ at the output power of 12w.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.309-312
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• 2002

Ferroelectric $Sr_{0.3}Ba_{0.7}Nb_{2}O_{6}$ (SBN30) thin films were deposited on Pt/Ti/$SiO_{2}$/Si(100) substrates by ion beam sputtering. During annealing treatment at $750^{\circ}C$, poling was attempted by applying dc voltage bias across polished surfaces. Phase relation, microstructure and crystallization behavior were examined using XRD and FE-SEM. Ferroelectric hysteresis characteristics were also determined where both remanent polarization and coercive values decreased with the increase of bias voltage. The measured remanent polarization and coercive field values at 5 V and 10 V bias were $36{\mu}C/cm^2$, $10{\mu}C/cm^2$ and 100kV /cm, 80kV /cm, respectively.

• Nuclear Engineering and Technology
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• v.29 no.6
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• pp.17-28
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• 1997

콘크리트를 통한 핵종의 확산계수는 처분장으로 부터의 핵종 유출을 평가하는데 중요한입력 인자이다. 본 연구에서는 콘크리트에서의 핵종확산 연구 현황 및 핵종화산에 미치는 주요 인자들의 영향 등이 조사되었고, 주요 핵종의 확산계수가 직접 측정되었다. 내부확산법으로 측정된 확산계수값은 시료의 물과 시멘트 비 (W/C)가 증가할수록 증가하였으나 거의 같은 승수내에 있었으며, 공극확산이 핵종이동을 지배하였다. Cs 과 I 의 겉보기 확산계수는 순수 시멘트에서 각각 $1.0{\times}10^{-12}~1.0{\times}10^{-11}m^2/s$ 및 $3.0{\times}10^{-14}~1.0{\times}10^{-13}m^2/s$, 몰타르에서는 각각 $3.0{\times}10^{-12}~9.0{\times}10^{-11}m^2/s$ 및 $3.0{\times}10^{-11}m^2/s$의 범위에 있었다. 이와 병행하여 시멘트, 몰타르 및 콘크리트에서의 주요 방사성핵종의 확산계수 값을 문헌으로부터 수집, 정리하였다. 대상 핵종은 Cs, I, Sr, C, Co, H, Am, PU, Ni, Mn, Fe, Nb 및 Tc로서 수집된 핵종확산계수 값은 시료의 조건 (공극률 밀도, W/C 비, 온도 등) 에 따라 큰 편차를 보여주고 있다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.12
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• pp.593-598
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• 2001

Transient liquid phase processing was investigated to decrease processing temperatures while maintaining useful piezoelectric properties in the lead zirconate titanate (PZT) system. Niobium oxide$(Nb_2O_5)$ modified crystalline PZT (PZTN) powder was combined with lead silicate $(PS; PbO-SiO_2)$ glass powder and crystalline titania, zirconia, and niobia. Firing above the melting temperature of the lead silicate $(PS; Tm \risingdotseq\; 714^{\circk}C)$ resulted in liquid phase densification of the PZTN followed by dissolution of the titania, zirconia, and niobia into the liquid phase, and crystallization of additional PZTN. The addition of crystalline titania, zirconia, and niobia to react with the lead oxide from the lead silicate phase resulted in an increase in the dielectric and Piezoelectric properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.251-254
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• 2000

This paper was to measure the structure, electric characteristics of 0.05Pb($(Al_{0.5}Nb_{0.5})$) - 0.95Pb$(Zr_{0.52}Ti_{0.48})O_3$ ceramics dopped with Cr+Fe. The results of this paper were gotten such as follows; The dielectric constants were decreased with Cr+Fe. The dielectric loss was minimum value of 1.008[%], dopped with Cr+Fe O.9[wt%] at 1200[$^{\circ}C$], In case of sintering at 1150[$^{\circ}C$], electromechanical factodkp) was maximum value of kp 42.73[%], at Cr+Fe 0.9[wt%]. The mechanical quality factor(Qm) was maximum value at Cr+Fe 1.2 [wt%], Also, in case of dopped with Cr+Fe, it make a improvement in temperature coefficient of resonant frequency at 0.3[wt%], 1150[$^{\circ}C$].

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1394-1395
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• 2006

$(Na_{0.5}LaK_{0.5})NbO_3$ (NKN) thin films were fabricated by the alkoxide-based MOD method. NKN stock solutions were made spin-coated onto the Pt/Ti/$SiO_2$/Si substrate. The structural properties of the NKN thin films examined by x-ray diffraction. The perovskite phase was obtained as a function of the annealing temperature from $550^{\circ}C$ to $700^{\circ}C$ for 1h. The crystallinity and grain size of the NKN thin films increased with increasing annealing temperature. The dielectric constants and loss of the NKN thin films annealed at $650^{\circ}C$ ($t_{eq}$=2.35 nm) showed 323 and 0.025.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1368-1369
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• 2006

In this thesis, the minuteness structure, piezoelectric, and dielectric characteristics of Pb[(Co0.5 W0.5) 0.03 (Ni1/3 Nb2/3) 0.07(Zr0.52 Ti0.48)0.9]O3+0.5Wt% MnO2 ceramics has been systematically investigated as a function of the sintering temperature after manufacturing the specimens with a general method. The electromechanical coupling coefficient (Kp) showed its maximum of 31.116[%] in the sintered specimens at $1050[^{\circ}C]$, and its minimum of 20.220[%] in the sintered specimens at $1150[^{\circ}C]$. The mechanical quality coefficient (Qm) marked the maximum of 139.526 at the sintering temperature of $1150[^{\circ}C]$.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.196-198
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• 1994

The dielectric and electrical properties of $Pb(Mg_{1/3}Nb_{2\3})O_3-PbTiO_3-BaTiO_3$ have been investigated. Perovskite crystalline phase of the specimens are confirmed by XRD at $1270^{\circ}C$. The curie temperature is around $40^{\circ}C$ with the amount of $BaTiO_3$ and $PbTiO_3$. Every specimens shows the slim loop hysteresis curves which is electrostrictive characteristic. The strain vs. applied voltage characteristics exhibits nonlinear relationship, and the specimen of 0.85PMN-0.125PT-0.025BT shows the largest strain.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.926-929
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• 2012

The $Sr_{0.7}Bi-{2.3}Nb_2O_9$(SBNO) thin films were deposited on Si substrate by RF magnetron sputtering method at $300^{\circ}C$ of substrate temperature. And the SBNO thin films were annealed at $650{\sim}800^{\circ}C$ using RTA (rapid thermal annealing). The grain of SBNO thin films were increased with the increase of annealing temperature. The dielectric constant (100) of SBNO thin film was obtained by RTA above $750^{\circ}C$. The voltage dependence of dielectric loss showed a value within 0.03 in voltage ranges of -5~+5 V. Also, the dielectric constant characteristics showed a stable value with the increase of frequency.

• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.84-90
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• 2019

The varistor properties and stability against dc-accelerated stress of $V_2O_5-Mn_3O_4-Co_3O_4-Dy_2O_3-Nb_2O_5-Bi_2O_3$ (VMCDNB)-doped zinc oxide ceramics sintered at $850-925^{\circ}C$ were investigated. Increasing the sintering temperature increased the average grain size from 4.6 to 8.7 mm and decreased the density of the sintered pellet density from 5.54 to $5.42g/cm^3$. The breakdown field decreased from 5919 to 1465 V/cm because of the increase in the average grain size. Zinc oxide ceramics sintered at $875^{\circ}C$ showed the highest nonlinear coefficient (43.6) and the highest potential barrier height (0.96 eV). Zinc oxide ceramics sintered at $850^{\circ}C$ showed the highest stability: the variation rate of the breakdown field was -2.0% and the variation rate of the nonlinear coefficient was -23.3%, after application of the specified stress (applied voltage/temperature/time).